I am passionate about tackling challenging problems and developing technologies that alleviate human suffering. My current work focuses on wide bandgap semiconductor devices, which are essential for grid-connected power electronics applications. These applications demand power switches capable of operating at high voltages, high temperatures, and high switching frequencies. Wide bandgap materials such as SiC and GaN offer significant performance advantages over conventional silicon devices due to their superior material properties. However, a major barrier to their widespread adoption is the lack of high-fidelity compact models for circuit simulation. Without accurate models to predict device behavior, circuit designers cannot fully assess the performance benefits of these materials, making them less likely to prioritize their use over traditional silicon-based devices. 

Research Interest

Device Modeling, Wide-Band Gap Semiconductors, Power Electronics, Electric Vehicles, and Renewable Energy Technology 

Selected work

A. S. M. K. Hasan, M. M. Hossain, M. Z. Islam, M. M. Islam, S. Ahmed, and H. A. Mantooth  ''Temperature Scaling and C-V Modeling of SiC Low-Voltage MOSFETs for IC Design", IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024 

A. S. M. K. Hasan, M. M. Hossain and H. A. Mantooth, Single Event Upset in Depletion-Mode Gallium Oxide MOSFETs at the Breakdown Region. International Conference on Applied Power Electronics Conference and Exposition (APEC), 2024

A. S. M. K. Hasan, M. Z. Islam, N. Vail, J. Venker, M. M. Hossain and H. A. Mantooth, Threshold Voltage Extraction Method for Low Voltage SiC MOSFETs at High-Temperature. International Conference on Energy Conversion Congress and Exposition (ECCE), 2023

A. S. M. K. Hasan, M. M. Hossain and H. A. Mantooth, A Physics-based Simscape Compact SiC Power MOSFET Model with Temperature-Scaling. International Conference on Energy Conversion Congress and Exposition (ECCE), 2022

A. S. M. K. Hasan, I. Bhogaraju, M. Farasat, and M. Malisoff, Lyapunov Function-Based Stabilizing Control Scheme for Wireless Power Transfer Systems with LCC Compensation Network. International Conference on Applied Power Electronics Conference and Exposition (APEC), 2021

M. M. Hossain, K. Shein, A. S. M. K. Hasan, Y. Wei and H. A. Mantooth, “Deep Cryogenic Characterization of GaN HEMT at 4K” 2023 AIAA/IEEE Electric Aircraft Technologies Symposium (EATS).

H. Wang, P. Lai, M. Z. Islam, A. S. M. K. Hasan, A. D. Mauro, R. Russell, Z. Feng et al. "A review of silicon carbide CMOS technology for harsh environments." Materials Science in Semiconductor Processing 178 (2024): 108422.