Embedded Files
2023
2023
Sang Woo Kim*, Wonjun Shin*, Munhyeon Kim*, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Changhyeon Han, Soi Jeong, Eun Chan Park, Ji Won You, Hyunwoo Kim, Rino Choi, Daewoong Kwon, “Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer,” IEEE Electron Device Letters, vol. 44, no. 12, pp. 1955–1958, Dec. 2023, (*Equally Contributed). doi: 10.1109/LED.2023.3324695.
Seunghwan Song, Bosung Jeon, Munhyeon Kim, Jae-Joon Kim, “Efficient Convolutional Processing of Spiking Neural Network With Weight-Sharing Filters,” IEEE Electron Device Letters, vol. 44, no. 6, pp. 1007–1010, Jun. 2023. doi: 10.1109/LED.2023.3265065.
Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 95–100, Jan. 2023. doi: 10.1109/JEDS.2023.3237386.
2022
2022
Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Investigation on Variability of Ferroelectric-Gate Field-Effect Transistor Memory by Random Spatial Distribution of Interface Trap,” IEEE Transactions on Nanotechnology, vol. 21, pp. 534–538, Sep. 2022. doi: 10.1109/TNANO.2022.3207505.
Seunghwan Song*, Munhyeon Kim*, Bosung Jeon, Donghyun Ryu, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Jae-Joon Kim, Wonbo Shim, Daewoong Kwon, Byung-Gook Park, “Spiking Neural Network With Weight-Sharing Synaptic Array for Multi-input Processing,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1657–1660, Aug. 2022, (*Equally Contributed). doi: 10.1109/LED.2022.3197239.
Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Novel Dual Liner Process for Side-Shielded Forksheet Device With Superior Design Margin,” IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2232–2235, May 2022. doi: 10.1109/TED.2022.3156957.
Soyoun Kim, Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, Byung-Gook Park, “Investigation of Device Performance for Fin Angle Optimization in FinFET and Gate-All-Around FETs for 3 nm-Node and Beyond,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 2088–2093, Apr. 2022. doi: 10.1109/TED.2022.3154683.
Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Daewoong Kwon, Byung-Gook Park, “Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory,” IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1048–1053, Mar. 2022. doi: 10.1109/TED.2022.3144965.
2021
2021
Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin Structure,” IEEE Electron Device Letters, vol. 42, no. 11, pp. 1580–1583, Nov. 2021. doi: 10.1109/LED.2021.3116461.
Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory,” IEEE Electron Device Letters, vol. 42, no. 11, pp. 1607–1610, Nov. 2021. doi: 10.1109/LED.2021.3116797.
2020
2020
Sihyun Kim, Munhyeon Kim, Donghyun Ryu, Kitae Lee, Soyoun Kim, Junil Lee, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, “Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs,” IEEE Transactions on Electron Devices, vol. 67, no. 6, pp. 2648–2652, Jun. 2020. doi: 10.1109/TED.2020.2989416.
Donghyun Ryu, Munhyeon Kim, Junsu Yu, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, “Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure,” IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1859–1863, Apr. 2020. doi: 10.1109/TED.2020.2975255.
Kitae Lee, Junil Lee, Sihyun Kim, Ryoongbin Lee, Soyoun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, Byung-Gook Park, “Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation,” IEEE Transactions on Nanotechnology, vol. 19, pp. 168–171, Feb. 2020. doi: 10.1109/TNANO.2020.2972605.
Donghyun Ryu, Munhyeon Kim, Sihyun Kim, Yunho Choi, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, “Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective,” IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 1317–1322, Mar. 2020. doi: 10.1109/TED.2020.2969445.
Junil Lee, Ryoongbin Lee, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Soyoun Kim, Munhyeon Kim, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, “Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique,” Solid-State Electronics, vol. 164, p. 107 701, Fab. 2020. doi: https://doi.org/10.1016/j.sse.2019.107701.
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