International Conference

2025

Munhyeon Kim, Yulhwa Kim, Jae-Joon Kim, “Compute-in-Memory Array Design using Stacked Hybrid IGZO/Si eDRAM cells,” ACM/IEEE Design, Automation and Test in Europe Conference (DATE), (Nominated as Best Paper Awards, Outstanding International Conference in the Field of Computer Science by BK21), 2025.

Munhyeon Kim, Jae-Joon Kim, “4-Transistor Ternary Content Addressable Memory Cell Design using Stacked Hybrid IGZO/Si Transistors,” 2024 61st ACM/IEEE Design Automation Conference (DAC), (Outstanding International Conference in the Field of Computer Science by BK21), 2024. doi: 10.1145/3649329.3655965.

Munhyeon Kim, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Changha Kim, Dong-Oh Kim, Byung-Gook Park, Daewoong Kwon, “Analysis on Endurance Characteristics of Ferroelectric Memory Device,” 2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 2022, pp. 630–633. doi: 10.1109/ITC-CSCC55581.2022.9895087.

Munhyeon Kim, Kitae Lee, Sihyun Kim, Soyoun Kim, Sangwan Kim, Byung-Gook Park, “Novel Stacked Floating Fin Structure Gate-All-Around Field-Effect Transistor for Design and Power Optimization,” 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, pp. 136–138. doi: 10.1109/EDTM.2019.8731051.
Soyoun Kim, Sihyun Kim, Kitae Lee, Munhyeon Kim, Ryoongbin Lee, Sangwan Kim, Byung-Gook Park, “Accurate Effective Width Extraction Methods for Sub-lOnm Multi-Gate MOSFETs through Capacitance Measurement,” 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, pp. 115–117. doi: 10.1109/EDTM.2019.8731247.
Kitae Lee, Junil Lee, Sihyun Kim, Soyoun Kim, Munhyeon Kim, Sangwan Kim, Byung-Gook Park, “Analysis on Fully Depleted Negative Capacitance Field-Effect Transistor (NCFET) Based on Electrostatic Potential Difference,” 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, pp. 422–424. doi: 10.1109/EDTM.2019.8731124.

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