International Conference

2026

Munhyeon Kim, Sukhyun Choi, Yulhwa Kim, Jae-Joon Kim, “3D Integration of Hybrid IGZO/Si and IGZO eDRAMs for High-Density/High-Performance On-Chip Memory ,” ACM/IEEE Design, Automation and Test in Europe Conference (DATE), (Nominated as Best Paper Awards, Outstanding International Conference in the Field of Computer Science by BK21), 2026. (Accepted as Regular Paper)

Kyung Min Lee, Ryun-Han Koo, Munhyeon Kim, Joon Hwang, Jae-Joon Kim, and Jong-Ho Lee, “Concealable and Bit Error-Free Breakdown-Based Physical Unclonable Functions Using Magnetic Tunnel Junctions,” IEEE International Electron Devices Meeting (IEDM), Dec. 2025.
Munhyeon Kim, Yulhwa Kim, Jae-Joon Kim, “Compute-in-Memory Array Design using Stacked Hybrid IGZO/Si eDRAM cells,” ACM/IEEE Design, Automation and Test in Europe Conference (DATE), (Nominated as Best Paper Awards, Outstanding International Conference in the Field of Computer Science by BK21), 2025. DOI: 10.23919/DATE64628.2025.10993125.

Munhyeon Kim, Jae-Joon Kim, “4-Transistor Ternary Content Addressable Memory Cell Design using Stacked Hybrid IGZO/Si Transistors,” 2024 61st ACM/IEEE Design Automation Conference (DAC), (Outstanding International Conference in the Field of Computer Science by BK21), 2024. DOI: 10.1145/3649329.3655965.

Munhyeon Kim, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Changha Kim, Dong-Oh Kim, Byung-Gook Park, Daewoong Kwon, “Analysis on Endurance Characteristics of Ferroelectric Memory Device,” 2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 2022, pp. 630–633. DOI: 10.1109/ITC-CSCC55581.2022.9895087.

Munhyeon Kim, Kitae Lee, Sihyun Kim, Soyoun Kim, Sangwan Kim, Byung-Gook Park, “Novel Stacked Floating Fin Structure Gate-All-Around Field-Effect Transistor for Design and Power Optimization,” 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, pp. 136–138. DOI: 10.1109/EDTM.2019.8731051.
Soyoun Kim, Sihyun Kim, Kitae Lee, Munhyeon Kim, Ryoongbin Lee, Sangwan Kim, Byung-Gook Park, “Accurate Effective Width Extraction Methods for Sub-lOnm Multi-Gate MOSFETs through Capacitance Measurement,” 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, pp. 115–117. DOI: 10.1109/EDTM.2019.8731247.
Kitae Lee, Junil Lee, Sihyun Kim, Soyoun Kim, Munhyeon Kim, Sangwan Kim, Byung-Gook Park, “Analysis on Fully Depleted Negative Capacitance Field-Effect Transistor (NCFET) Based on Electrostatic Potential Difference,” 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, pp. 422–424. DOI: 10.1109/EDTM.2019.8731124.

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