• [International Conference] Hyeong-Seok Jang*, Munhyeon Kim*, Luhing Hu, Jaewoo Shim, Joonyun Kim, Minsu Seol, Sang Won Kim,  "Device-to-Architecture Co-design of Monolithic 3D FPGA using 2D Transistor," IEEE/JSAP Symposium on VLSI Circuits (VLSI), 2026. (Top-Tier Conference). (*Co-first)

• [International Conference] Munhyeon Kim, Sukhyun Choi, Yulhwa Kim, Jae-Joon Kim, “3D Integration of Hybrid IGZO/Si and IGZO eDRAMs for High-Density/High-Performance On-Chip Memory ,” ACM/IEEE Design, Automation and Test in Europe Conference (DATE), 2026. (Nominated as Best Paper Awards, Outstanding International Conference in the Field of Computer Science by BK21)

• [International Journal] Kihoon Kim, Hyeokjun You, Seungmin Kang, Heebum Kang, Sangwan Kim, Munhyeon Kim*, Sihyun Kim*, “Innovative 3D n-Capacitor-Stacked FeRAM with Optimized Inhibition Scheme and Cell Design for Nonvolatile DRAM Applications,” IEEE Transactions on Electron Devices, Jan. 2026, (*Co-corresponding). DOI: 10.1109/TED.2025.3632818.

2025

• [International Conference] Kyung Min Lee, Ryun-Han Koo, Munhyeon Kim, Joon Hwang, Jae-Joon Kim, and Jong-Ho Lee, “Concealable and Bit Error-Free Breakdown-Based Physical Unclonable Functions Using Magnetic Tunnel Junctions,” IEEE International Electron Devices Meeting (IEDM), Dec. 2025. DOI: 10.1109/IEDM50572.2025.11353805.

• [International Conference] Munhyeon Kim, Yulhwa Kim, Jae-Joon Kim, “Compute-in-Memory Array Design using Stacked Hybrid IGZO/Si eDRAM cells,” ACM/IEEE Design, Automation and Test in Europe Conference (DATE), (Nominated as Best Paper Awards, Outstanding International Conference in the Field of Computer Science by BK21), 2025. DOI: 10.23919/DATE64628.2025.10993125.

2024

• [International Conference] Munhyeon Kim, Jae-Joon Kim, “4-Transistor Ternary Content Addressable Memory Cell Design using Stacked Hybrid IGZO/Si Transistors,” ACM/IEEE Design Automation Conference (DAC), 2024 (Outstanding International Conference in the Field of Computer Science by BK21), 2024. DOI: 10.1145/3649329.3655965.

2023

• [International Journal] Sang Woo Kim*, Wonjun Shin*, Munhyeon Kim*, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Changhyeon Han, Soi Jeong, Eun Chan Park, Ji Won You, Hyunwoo Kim, Rino Choi, Daewoong Kwon, “Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer,” IEEE Electron Device Letters, vol. 44, no. 12, pp. 1955–1958, Dec. 2023, (*Co-first). DOI: 10.1109/LED.2023.3324695.

• [International Journal] Seunghwan Song, Bosung Jeon, Munhyeon Kim, Jae-Joon Kim, “Efficient Convolutional Processing of Spiking Neural Network With Weight-Sharing Filters,” IEEE Electron Device Letters, vol. 44, no. 6, pp. 1007–1010, Jun. 2023, (*Co-first). DOI: 10.1109/LED.2023.3265065.

• [International Journal] Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 95–100, Jan. 2023. DOI: 10.1109/JEDS.2023.3237386.

2022

• [International Journal] Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Investigation on Variability of Ferroelectric-Gate Field-Effect Transistor Memory by Random Spatial Distribution of Interface Trap,” IEEE Transactions on Nanotechnology, vol. 21, pp. 534–538, Sep. 2022. DOI: 10.1109/TNANO.2022.3207505.

• [International Journal] Seunghwan Song*, Munhyeon Kim*, Bosung Jeon, Donghyun Ryu, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Jae-Joon Kim, Wonbo Shim, Daewoong Kwon, Byung-Gook Park, “Spiking Neural Network With Weight-Sharing Synaptic Array for Multi-input Processing,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1657–1660, Aug. 2022, (*Co-first). DOI: 10.1109/LED.2022.3197239.

• [International Conference] Munhyeon Kim, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Changha Kim, Dong-Oh Kim, Byung-Gook Park, Daewoong Kwon, “Analysis on Endurance Characteristics of Ferroelectric Memory Device,” International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 2022, pp. 630–633. DOI: 10.1109/ITC-CSCC55581.2022.9895087.

• [International Journal] Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Novel Dual Liner Process for Side-Shielded Forksheet Device With Superior Design Margin,” IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2232–2235, May 2022. DOI: 10.1109/TED.2022.3156957.

• [International Journal] Soyoun Kim, Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, Byung-Gook Park, “Investigation of Device Performance for Fin Angle Optimization in FinFET and Gate-All-Around FETs for 3 nm-Node and Beyond,” IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 2088–2093, Apr. 2022. DOI: 10.1109/TED.2022.3154683.

• [International Journal] Kitae Lee, Sihyun Kim, Munhyeon Kim, Jong-Ho Lee, Daewoong Kwon, Byung-Gook Park, “Comprehensive TCAD-Based Validation of Interface Trap-Assisted Ferroelectric Polarization in Ferroelectric-Gate Field-Effect Transistor Memory,” IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1048–1053, Mar. 2022. DOI: 10.1109/TED.2022.3144965.

2021

• [International Journal] Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Suppression of Statistical Variability in Stacked Nanosheet Using Floating Fin Structure,” IEEE Electron Device Letters, vol. 42, no. 11, pp. 1580–1583, Nov. 2021. DOI: 10.1109/LED.2021.3116461.

• [International Journal] Munhyeon Kim, Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon, “Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory,” IEEE Electron Device Letters, vol. 42, no. 11, pp. 1607–1610, Nov. 2021. DOI: 10.1109/LED.2021.3116797.

2020

• [International Journal] Sihyun Kim, Munhyeon Kim, Donghyun Ryu, Kitae Lee, Soyoun Kim, Junil Lee, Ryoongbin Lee, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, “Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs,” IEEE Transactions on Electron Devices, vol. 67, no. 6, pp. 2648–2652, Jun. 2020. DOI: 10.1109/TED.2020.2989416.

• [International Journal] Donghyun Ryu, Munhyeon Kim, Junsu Yu, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, “Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure,” IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1859–1863, Apr. 2020. DOI: 10.1109/TED.2020.2975255.

• [International Journal] Kitae Lee, Junil Lee, Sihyun Kim, Ryoongbin Lee, Soyoun Kim, Munhyeon Kim, Jong-Ho Lee, Sangwan Kim, Byung-Gook Park, “Negative Capacitance Effect on MOS Structure: Influence of Electric Field Variation,” IEEE Transactions on Nanotechnology, vol. 19, pp. 168–171, Feb. 2020. DOI: 10.1109/TNANO.2020.2972605.

• [International Journal] Donghyun Ryu, Munhyeon Kim, Sihyun Kim, Yunho Choi, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, “Design and Optimization of Triple-k Spacer Structure in Two-Stack Nanosheet FET From OFF-State Leakage Perspective,” IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 1317–1322, Mar. 2020. DOI: 10.1109/TED.2020.2969445.

• [International Journal] Junil Lee, Ryoongbin Lee, Sihyun Kim, Kitae Lee, Hyun-Min Kim, Soyoun Kim, Munhyeon Kim, Sangwan Kim, Jong-Ho Lee, Byung-Gook Park, “Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique,” Solid-State Electronics, vol. 164, p. 107 701, Fab. 2020. DOI: https://doi.org/10.1016/j.sse.2019.107701.

2019