• Mingyu Kim, Munhyeon Kim, Daewon Ha, “Methods of manufacturing a semiconductor device using a mask,” US12225703B2, United States Patent, Fab. 11, 2025.

• Munhyeon Kim, Myung Gil Kang, Wandon Kim, “Semiconductor device and method of fabricating the same where semiconductor device includes high-k dielectric layer that does not extend between inhibition layer and side of gate electrode,” US12199163B2, United States Patent, Jan. 14, 2025.

• Yonghee Park, Munhyeon Kim, Uihui Kwon, Joohyung You, Daewon Ha, “Semiconductor device,” US12191368B2, United States Patent, Jan. 7, 2025.

2024

• Mun Hyeon Kim, Kern Rim, Dae Won Ha, “Semiconductor devices and methods for fabricating the same,” US11973111B2, United States Patent, Apr. 30, 2024.

• Mun Hyeon Kim, Mingyu Kim, Doyoung Choi, Dae Won Ha, “Semiconductor devices and methods for fabricating the same,” US11908861B2, United States Patent, Fab. 20, 2024.

2023

• Mingyu Kim, Munhyeon Kim, Daewon Ha, “Semiconductor device,” US11832430B2, United States Patent, Nov. 28, 2023.

• Munhyeon Kim, Myung Gil Kang, Wandon Kim, “Semiconductor device and method of fabricating the same,” US11804530B2, United States Patent, Oct. 31, 2023.

• Munhyeon Kim, Soonmoon Jung, Daewon Ha, “Semiconductor devices having multi-channel active regions and methods of forming same,” US11798949B2, United States Patent, Oct. 24, 2023.

• Munhyeon Kim, Youngchai Jung, Mingyu Kim, Seon-Bae Kim, Yeonho Park, “Semiconductor device,” US11749678B2, United States Patent, Sep. 05, 2023.

• Jin Bum Kim, Munhyeon Kim, Hyoung Sub Kim, Tae Jin Park, Kwan Heum Lee, Chang Woo Noh, Maria Toledano Lu Que, Hong Bae Park, Si Hyung Lee, Sung Man Whang, “Semiconductor device including non-sacrificial gate spacers and method of fabricating the same,” US11705503B2, United States Patent, Jul. 18, 2023.

2022

• Mun Hyeon Kim, Byung Gook Park, Keun Hwi Cho, Si Hyun Kim, Ki Tae Lee, “Semiconductor devices including a narrow active pattern,” US11482522B2, United States Patent, Oct. 25, 2022.

• Mun Hyeon Kim, Youngchai Jung, Mingyu Kim, Seon-Bae Kim, Yeonho Park, “Semiconductor devices including a narrow active pattern,” US11404412B2, United States Patent, Aug. 02, 2022.

• Munhyeon Kim, Soonmoon Jung, Daewon Ha, “Semiconductor devices having multi-channel active regions and methods of forming same,” US11329066B2, United States Patent, May 2022.

• Changwoo Noh, Munhyeon Kim, Hansu Oh, Sungman Whang, Dongwon Kim, “Semiconductor devices having a fin-shaped active region and methods of manufacturing the same,” US11257925B2, United States Patent, Feb. 2022.

2019

• Mun-Hyeon Kim, Sung-man Whang, Chang-Woo Noh, Dong-won Kim, Han-Su Oh, “Integrated circuit device,” US10396205B2, United States Patent, Aug. 2019.

• Mun-Hyeon Kim, Chang-Woo Noh, Keun-Hwi Cho, Myung-Gil Kang, Shigenobu Maeda, “Semiconductor devices and inverter having the same,” US9966376B2, United States Patent, May 2018.

• Yaoqi Dong, Mun Hyeon Kim, Keun Hwi Cho, Shigenobu Maeda, Han Su Oh, “Semiconductor device having first and second gate electrodes and method of manufacturing the same,” US9576959B1, United States Patent, Feb. 2017.

• Sungil Park, Munhyeon Kim, Woonggi Kim, Keunhwi Cho, Hwichan Jun, Dongwon Kim, Daewon Ha, “Semiconductor devices including contact patterns having a rising portion and a recessed portion,” US9536968B2, United States Patent, Jan. 2017.

• Keun-Hwi Cho, Sung-il Park, Byoung-Hak Hong, Toshinori Fukai, Mun Hyeon Kim, Woong-Gi Kim, Sue-Hye Park, Dong-won Kim, Dae-Won Ha, “Semiconductor device,” US9331199B2, United States Patent, May 2016.

2018

• Mun-Hyeon Kim, Chang-Woo Noh, Keun-Hwi Cho, Myung-Gil Kang, Shigenobu Maeda, “Semiconductor devices and inverter having the same,” US9966376B2, United States Patent, May 2018.

2017

• Yaoqi Dong, Mun Hyeon Kim, Keun Hwi Cho, Shigenobu Maeda, Han Su Oh, “Semiconductor device having first and second gate electrodes and method of manufacturing the same,” US9576959B1, United States Patent, Feb. 2017.

• Sungil Park, Munhyeon Kim, Woonggi Kim, Keunhwi Cho, Hwichan Jun, Dongwon Kim, Daewon Ha, “Semiconductor devices including contact patterns having a rising portion and a recessed portion,” US9536968B2, United States Patent, Jan. 2017.

2016