High-Performance Power Semiconductor
Based on WBG Materials 

Our laboratory focuses on the development of next-generation power semiconductor devices utilizing wide bandgap (WBG) materials such as Ga₂O₃, and SiC.

WBG semiconductors offer superior material properties compared to conventional silicon, including higher breakdown electric field, thermal stability, and fast switching capability, making them ideal for high-power and high-efficiency systems. Our research spans the full device development cycle—from the design of MOSFETs, and Schottky diodes, to thin-film fabrication, process optimization, electrical characterization, and reliability evaluation.

We are also planning application-driven studies focused on real-world use cases such as electric vehicle powertrains, renewable energy inverters, and high-speed power conversion circuits.