Research on
Device Design & WBG Materials
for High-Performance Applications 

Our laboratory focuses on device design and material-device integrated research utilizing wide bandgap (WBG) semiconductors such as Ga₂O₃, and SiC for high-efficiency and high-performance applications.

WBG materials surpass conventional silicon in terms of breakdown voltage, thermal stability, and switching speed, and are considered key enablers of next-generation power and sensing technologies. We actively pursue research in the following areas:

• Design and optimization of semiconductor devices
  (e.g., MOSFETs, Schottky diodes)

• Thin film growth and fabrication process optimization of WBG materials

• Device simulation and material property evaluation

• Electrical performance testing and reliability analysis

Our work aims to bridge material innovation with practical device implementation, targeting applications in UV/X-ray detection, power conversion circuits, EV drive systems, and high-speed communications. Through vertically integrated research from materials to device-level technology, we strive to deliver solutions for real-world challenges.