Next-Generation
X-ray and Deep Ultraviolet (UV-C) Sensor 

Our laboratory focuses on the development of X-ray and deep ultraviolet (UV-C) photodetectors based on wide bandgap (WBG) semiconductor materials such as Ga₂O₃ and SiC.

WBG materials offer superior resistance to high-energy photons and low-noise characteristics, enabling highly sensitive and wavelength-selective detection beyond the capabilities of traditional silicon-based sensors. Leveraging these advantages, we aim to realize high-speed and reliable sensors for use in applications including medical imaging, nondestructive industrial inspection, environmental monitoring, aerospace, and defense systems.

Our research covers the entire device development process—from material growth and thin-film fabrication to device modeling, readout electronics, and sensor module integration—paving the way toward practical, high-performance sensor platforms.