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Electrons Bound to Neutral Donors
Electrons Bound to Neutral Donors
Electrons bound to impurities in semiconductors are promising candidates for quantum information processing due to their potential for good spin coherence properties and high homogeneity. A particular impurity of interest is the neutral donor-bound electron (D0) in III-V and II-VI semiconductors. The D0 state is an atom-like system, consisting of a donor impurity and a bound electron. The two spin states of 1s D0 state can be utilized as a qubit system.
Currently, we are focused on donor systems in ZnO. This system has attractive optical properties for photon-based quantum network protocols including a short radiative lifetime, > 90% radiative efficiency into the zero phonon line, and potential for high optical homogeneity. The storage of information by qubits is fundamentally limited by the phonon-induced spin relaxation time (T1 ~ 500 ms at 1.75 T) and decoherence time (T2> 0.05 ms). We have performed all-optical measurements on the spin properties as a function of magnetic field, temperature, and excitation energy to better understand the relaxation mechanisms. Additionally, we have demonstrated the formation of D0 in ZnO with good optical and spin properties via In ion implantation.
We are currently working toward microwave control of ZnO electron spin states, isolating single donors, implantation of defects, imaging single defects in nanostructures, and hybrid quantum communication applications (such as entanglement) between ZnO donors and 171 Yb+ trapped ions.
Figure 1: Crystal structure and energy diagram for donors in ZnO
Recent publications
Recent publications
Ethan R. Hansen*, Vasileios Niaouris*, Bethany E. Matthews, Christian Zimmermann, Xingyi Wang, Roman Kolodka, Lasse Vines, Steven R. Spurgeon, Kai-Mei C. Fu, Isolation of Single Donors in ZnO, arxiv (2023)
Vasileios Niaouris*, Samuel H. D'Ambrosia*, Christian Zimmermann, Xingyi Wang, Ethan R. Hansen, Michael Titze, Edward S. Bielejec, Kai-Mei C. Fu, Contributions to the optical linewidth of the shallow donor-bound excitonic transition in ZnO, Optica Quantum 2, 7-13 (2024)
Xingyi Wang*, Christian Zimmermann*, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D'Ambrosia, Lasse Vines, Edward S. Bielejec, Kai-Mei C. Fu, Properties of Donor Qubits in ZnO Formed by Indium-Ion Implantation, Physical Review Applied 19, 054090 (2023) (Editor's Suggestion)
Vasileios Niaouris, Mikhail V. Durnev, Xiayu Linpeng, Maria L.K. Viitaniemi, Christian Zimmermann, Aswin Vishnuradhan, Yosuke Kozuka, Masashi Kawasaki, Kai-Mei C. Fu, Ensemble spin relaxation of shallow donor qubits in ZnO, Physical Review B 105, 195202 (2022)
Maria L. K. Viitaniemi, Christian Zimmermann, Vasileios Niaouris, Samuel H. D'Ambrosia, Xingyi Wang, E. Senthil Kumar, Faezeh Mohammadbeigi, Simon P. Watkins, Kai-Mei C. Fu, Coherent Spin Preparation of Indium Donor Qubits in Single ZnO Nanowires, Nano Letters (2022)
Jennifer F. Lilieholm, Vasileios Niaouris, Alexander Kato, Kai-Mei C. Fu and Boris B. Blinov, Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion, Applied Physics Letters 117, 154002 (2020)
Xiayu Linpeng, Maria L.K. Viitaniemi, Aswin Vishnuradhan, Y. Kozuka, Cameron Johnson, M. Kawasaki, Kai-Mei C. Fu, Coherence properties of shallow donor qubit in ZnO, Physical Review Applied 10, 064061 (2018) (Editor's Suggestion)
*Authors contributed equally to this work.
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