Profile

Dr. Prabir Pal

Principal Scientist, prabir.phy@gmail.com; prabir.p@cgcri.res.in 

Energy Materials & Device Division (EMDD) and Materials Characterization and Instrumentation Division (MCID)

CSIR-Central Glass and Ceramic Research Institute,

196, Raja S. C. Mullick Road, Kolkata 700032, India

Tel.: +91-33-2322-3334

Fax: +91-33-2473-0957

For more details click here: https://sites.google.com/site/prabirphy/

http://orcid.org/0000-0002-7356-2587

Present Activity: We study the electronic structure of Ceramics, Composite materials, transition metal-oxides, Oxide heterostructures and 2-dimensional layered materials by using photoelectron spectroscopy. We work in the field of new materials development for energy and optoelectronic device applications.

Prabir Pal received his Ph. D from Institute of Physics (IOP), Bhubaneswar under Homi Bhabha National Institute (HBNI) in 2008. He continued as a Post-Doctoral Research Fellow at the University of Augsburg, Germany from 2008 to 2009 and then University of Uppsala, Sweden from 2009 to 2011.

Educational Qualifications:

Ph.D thesis title: “Electron spectroscopic studies of some colossal magnetoresistive manganites” I received my Ph. D degree from Institute of Physics (IOP), Bhubaneswar, Homi Bhabha National Institute, in 2008 where I worked on the synthesis, characterization and electronic structure investigation of oxide CMR materials by using Photoemission Spectroscopy.

Details of employment:

Date of Joining: CSIR-NPL - 01 Feb, 2011 and CSIR-CGCRI – 03 June, 2019 (ID: 2131) &

Blood Group: A+

Date of Birth: 18/12/1976

No. of Publications:

Present Ph. D Students:

2. Samanta Pal, CSIR NET JRF (Date of joining July 2020)

1. Modassar Hossain, CSIR NET JRF (Date of joining August 2019)

Ph. D degree awarded (AcSIR): 02 

M. Tech thesis completed: 04

Current Projects:

1. Energy Storage Platform on Batteries, sponsored by DST, Co-principal investigator (August 2019 to July 2023), Scope: Development of Ceramic Separators for Li-ion battery

Completed Projects: Four

4. Growth & Characterization of III-nitride Hetero-structures for Solid State Lighting devices, under Efficient Silicon Photovoltics with Smart Electronics and Lighting System a network project sponsored by CSIR under Technologies and Products for Solar-energy Utilization through Networks- “TAP-SUN” 2012-2017 (Team member)

3. MBE grown GaN/InxGa1-xN high efficiency multi junction Solar cell, under the project entitled Development of Advanced Materials for Next Generation Energy Efficient Devices (D-NEED) PSC0109 funded by CSIR under 12th FYP 2012-2017 (Team member)

2. Photoconductivity of novel materials – Exploiting new experimental resources, funded by CSIR-NPL, LRF (OLP 120132) 2011-2015: “Variable Temperature Steady State Photoconductivity” facility was developed in this project at CSIR-NPL (Principal Investigator)

1. Fabrication of LED Devices and Systems for Solid State Lighting (NWP-25), A supra-institutional network project sponsored by CSIR under 11th FYP 2007-2012 (Team member)

Recently delivered invited talks and session chair:

[7] Delivered series lectures in the faculty development program at Jaypee Institute of Information Technology (JIIT) – Noida, 01-06th July, 2019, organized by department of Physics and Materials Science & Engineering, JIIT, title: “Familiarization with X-ray Photoelectron Spectroscopy (XPS) method and technique”

[6] Delivered an invited talk on 16th March, 2018 at Jaypee Institute of Information Technology (JIIT) - Noida in the National Conference on Advanced Materials and Nanotechnology (AMN-2018) 15-17th March 2018, organized by department of Physics and Materials Science & Engineering, JIIT, title: “Two-Dimensional (2D)-MoS2 Layered Materials: Electronic Structure and Optoelectronic Devices”

[5] Delivered an invited talk on 27th December, 2017 at IISER-Bhopal in the National Conference on Electronic Structure (NCES-2017) Organized by TIFR, IOP and SINP, title: “Two-Dimensional (2D) MoS2 Layered Materials: Electronic Structure and Optoelectronic Devices”

[4] Delivered an invited talk on 17th March, 2017 title: “Oxide thin films and Optoelectronic Devices”, during 16-17th, 2017, LEOS (Laboratory for Electro-Optics System), ISRO, Peenya, Karnataka, Bangalore, India

[3] Delivered an invited speech on 23rd Sept, 2016 at UGC Sponsored National Level Seminar on “Characterization of Nanomaterials” Organized by Dept. of Physics, Ramananda College, Bishnupur, Bankura W.B, during September 22-23, 2016 title: “Introduction to X-ray Photoelectron spectroscopy  and Photoconductivity on material characterization”

[2] Session Chair at UGC Sponsored National Level Seminar on “Characterization of Nanomaterials” Organized by Dept. of Physics, Ramananda College, Bishnupur, Bankura W.B, during September 22-23, 2016.

[1] Delivered an invited talk on 23rd Feb, 2016 title: “Interface properties of oxide heterostructures”, at Workshop on Frontiers in Condensed Matter Physics” in Feb. 22nd – 27th, 2016 at IOP, Bhubaneswar, India.

Few Selected Publications (* as corresponding author)

19. Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the few-layer MoS2/Ni80Fe20 interface, A. Kumar, A. Chaurasiya, N. Chowdhury, A. Mondal, R. Bansal, A. Barvat, S. P. Khanna, P. Pal, S. Chaudhary, A. Barman and P. K.  Muduli. Applied Physics Letters 116, 232405 (2020).

18. Solution-Processed-2D on 3D Heterojunction UV-Visible Photodetector for Low-Light Applications, G. Kumar, N. Prakash, M. Singh, A. Chakravorty, D. Kabiraj, S. P. Singh, P. Pal*, and S. P. Khanna, ACS Appl. Electron. Mater. 1, 1489, (2019).

17. Long‐Term, High‐Voltage, and High‐Temperature Stable Dual‐Mode, Low Dark Current Broadband Ultraviolet Photodetector Based on Solution‐Cast r‐GO on MBE‐Grown Highly Resistive GaN, N. Prakash, G. Kumar, M. Singh, S. P. Singh, B. Satpati, S. P. Khanna, P. Pal*, Advanced Optical Materials 7, 1900340, (2019).

16. Binary Multifunctional Ultrabroadband Self-Powered g-C3N4/Si Heterojunction High-Performance Photodetector, N. Prakash, G. Kumar, M. Singh, A. Barvat, P. Pal*, S. P. Singh, H. K. Singh and S. P. Khanna, Advanced Optical Materials 6, 1800191, (2018).

15. Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect, A. Barvat, N. Prakash, G. Kumar, D. K. Singh, A. Dogra, S. P. Khanna, and P. Pal*, Current Applied Physics 18, 170, (2018).

14. Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates, A. Barvat, N. Prakash, B. Satpati, S. S. Singha, G. Kumar, D. K. Singh, A. Dogra, S. P. Khanna, A. Singha, P. Pal*, Journal of Applied Physics 122, 015304 (2017).

13. Photo-resistive properties of LaAl0.6Cr0.4O3/SrTiO3 heterostructures: a comparative study with LaAlO3/SrTiO3, Aswin V., P. Kumar, P. Pal* and A. Dogra, Optics Letters 41, 1134 (2016).

12. Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes. N. Prakash, M. Singh, G. Kumar, A. Barvat, K. Anand, P. Pal*, S. P. Singh and S. P.  Khanna. Applied Physics Letters 109, 242102 (2016).

11. Metal-to-insulator transition in LaAl1−xCrxO3/SrTiO3 oxide heterostructures guided by electronic reconstruction, P. Kumar, P. Pal*, A. K. Shukla, J. J. Pulikkotil, and A. Dogra, Phys. Rev. B 91, 115127 (2015).

10. Chemical potential shift and gap-state formation in SrTiO3-d revealed by photoemission spectroscopy, P. Pal*, P. Kumar, Aswin V, A. Dogra and A. G. Joshi, Journal of Applied Physics 116, 053704 (2014).

9. Photoconductivity and photo-detection response of multiferroic bismuth iron oxide. A. Anshul, H. Borkar, P. Singh, P. Pal, S. S. Kushvaha and A. Kumar; Applied Physics Letters 104, 132910 (2014).

8. Electronic structure of the electron-doped CMR Ca0.86Pr0.14MnO3. M. K. Dalai, P. Pal, B. R. Sekhar, M. Merz, P. Nagel, S. Schuppler, and C. Martin, Phys. Rev. B 85, 155128 (2012).

7. A simple method to produce almost perfect graphene on highly oriented pyrolytic graphite. M. J. Webb, P. Palmgren, P. Pal, O. Karis and H. Grennberg, Carbon 49, (2011) 3242-3249.

6. Pseudogap behavior in Pr0.5Sr0.5MnO3: A photoemission study. P. Pal*, M. K. Dalai and I. Ulfat, Surface Science 605, 875-877 (2011).

5. Atomic scale chemical fluctuation in LaSrVMoO6: A proposed halfmetallic antiferromagnet. S. Jana, V. Singh, S. D. Kaushik, C. Meneghini, P. Pal, R. Knut, O Karis, I. Dasgupta, V. Siruguri, S. Ray, Phys. Rev. B (Rapid Communications) 82, 180407(R) (2010).

4. Pseudogap behavior of phase-separated Sm1-xCaxMnO3: A comparative photoemission study with double exchange. P. Pal, M. K. Dalai, R. Kundu, B. R. Sekhar and C. Martin, Phys. Rev. B. 77, 184405 (2008).

3. Near Fermi Level Electronic Structure of Pr1-xSrxMnO3: Photoemission study. P. Pal, M. K. Dalai, R. Kundu, M. Chakraborty, B. R. Sekhar and C. Martin, Phys. Rev. B 76, 195120 (2007).

2. Electronic structure of Pr0.67Ca0.33MnO3 near the Fermi level studied by ultraviolet photoelectron and x-ray absorption spectroscopy. M. K. Dalai, P. Pal, B. R. Sekhar, N. L. Saini, R. K. Singhal, K. B. Garg, B. Doyle, S. Nanarone, C. Martin, and F. Studer, Phys. Rev. B 74, 165119 (2006).

1. Valence band electronic structure of Pr1-xSrxMnO3 from photoemission studies. P. Pal, M. K. Dalai, B. R. Sekhar, S. N. Jha, S. V. N. Bhaskara Rao, N. C. Das, C. Martin, and F. Studer, J. Phys. Condens. Matter 17, (2005) 2993-2999.