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Growth, Fabrication and Measurements of optoelectronic Devices
Oxide heterostructures
2-D Van der Waals Materials
Highly resistive GaN/r-GO based photodetector for Harsh Electronics applications:
Broadband ultraviolet photodetector based on hybrid 2D/3D structure was demonstrated. The device employed a highly resistive GaN integrated with thin reduced graphene‐oxide for applications in harsh environments, working up to ±200 V bias and 116 °C with long‐term stability over 28 months without any aging effect. The device operates appreciably in both photovoltaic and photoconductive modes showing high responsivity and fast switching speed (Advanced Optical Materials 7, 1900340, 2019).