Most of my experience with DFT comes from the use of VASP, although other DFT packages do exist. The benefit of using VASP is it's wide use, active development. More importantly, the pseudo-potential library is widely used which eliminates the problems of having to create a working pseudo-potential library, and usually has cutting edge improvements, such as hybrid functionals, GW, which I personally have little experience in. It uses a plane-wave basis set which makes it more efficient for materials science.
I am writing a series of tutorials on VASP, which introduces people to computational simulations in a gentile approach which I thnk should be appropriate for advanced undergraduates of materials science/physics/chemistry and beginning graduate students. There might be more advanced stuff later involving software I write, but this will likely be in a different section.
To get setup, one should do the relevant portions of the CompMatSci bootcamp to get yourself up and running. I have setup a series of steps to get a system up and running based upon what I consider an optimal setup to do computational simulations based on my personal experience and having on-boarded people to do computational materials simulations. This should be done first.
The progression of these tutorials follows the abinit tutorial, which I consider to be better as an introduction to DFT than VASP's website.
http://cms.mpi.univie.ac.at/wiki/index.php/Installing_VASP
References:
[1] https://www.vasp.at/vasp-workshop/slides/k-points.pdf
For electronic relaxation:
EDIFF
ENCUT[1]
For semiconductors and insulators, use the tetrahedron method (ISMEAR -5). For large cells, use Gaussian smearing (ISMEAR = 0) with a small SIGMA = 0.05. For relaxations in metals use ISMEAR=1 or ISMEAR=2 and an appropriate SIGMA value. For metals, the default value (SIGMA = 0.2) is sensible. For DOS and total energy calculations use the tetrahedron method. For calculated forces, stress tensors and calculation of phonon frequencies use the method of Methfessel-Paxton (ISMEAR > 1). The tetrahedron method for semiconductors and insulators are always correct because partial occupancies do not vary and are either zero or one.[1]
cat OUTCAR | grep 'entropy T*S EENTRO ='
[1] Georg Kresse, Martijn Marsman, and Jürgen Furthmüller. "ISMEAR, SIGMA, FERWE, FERDO SMEARINGS tag" VASP the GUIDE. Link
[2] https://docs.quantumwise.com/manuals/technicalnotes/occupation_methods/occupation_methods.html
LDA(CA)
GGA(PW91)
GGA(PBE)
potpaw
potpaw_GGA
potpaw_PBE
Choice of PAW potentials for transition metals:
X_pv, the semi core p states are treated as valence
X_sv, the semi core s states are treated as valence
References:
[1] G. Kresse. "The PAW and US:PP database." https://www.vasp.at/vasp-workshop/slides/pseudoppdatabase.pdf
[LDA] G. Kresse, and J. Joubert "From ultrasoft pseudopotentials to the projector augmented wave method.", Phys. Rev. B. 59, 1758 (1999)
For HPC Gator
uf hpc wiki
http://wiki.hpc.ufl.edu/doc/UF_Research_Computing_Wiki
ssh <username>@submit.hpc.ufl.edu
cp ~/class /scratch/hpc/eragasa
cd /scratch/hpc/eragasa
find VASP
qsub <runjob>
qstat <runjob>
YOU ARE GOOD IF
reached required accuracy - stopped structural accuracy minimization
INCAR
EDIFF
EDIFFG
KPOINTS - determines how many k-points are used to sample the Brillouin zone. for molecules or atoms, only a single k-point is required. For atoms and molecules the Bloch theorem does not apply, therefore there is not a need to use more than a single k-point. When more k-points are used, only the interaction between the atoms is described more accurately.
POSCAR - inital structure
POTCAR
Output File:
OUTCAR
total energy of a system
grep ""gy wi" OUTCAR
CHGCAR - amount of electrons
CONTCAR - final structural size