Dr Nobuya MORI

• Steering chair, 2023, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

• Conference chair, 2019 International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)

• Steering chair, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

• Conference chair, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

• Program chair, 2013 International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)

• Conference chair, 2013 International Workshop on Computational Electronics (IWCE)

• Program committee member, SSDM 2008-2017, ISANN 2015, SISPAD 2008, 2009, 2012, IWCE 2012, IWCN 2021, EDISON 2007

• International steering committee member, SISPAD 2013, 2014, 2015

• International advisory committee member,  IWCN (IWCE), EDISON

• Editorial board member, Journal of Computational Electronics

• Editorial board member, Semiconductor Science and Technology

• EPSRC peer review associate college member

Recent and Upcoming Invited Talks and Tutorials

• "Simulation of MOSFET subthreshold characteristics at cryogenic temperatures."  Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD).

• "Modeling and Simulation of Quantum Transport Properties of Semiconductor Nanosheets," 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC).

• "Semiconductor device simulation from first principles," The 24th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-24)

• "Impacts of band structures and scattering processes on high-field carrier transport in wide bandgap semiconductors," International Workshop on Computational Nanotechnology 2023 (IWCN 2023)

• "Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices," The International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021).

• "RSDFT-NEGF quantum transport simulation of ultra-small field-effect transistors," The 4th IEEE Electron Devices Technology and Manufacturing (EDTM)

• ”Quantum transport device simulation based on real-space density functional theory and non-equilibrium Green's function method," International Union of Materials Research Societies – International Conference on Electronic Materials 2018 (IUMRS-ICEM 2018)

• "Recent progress in NEGF simulation of electron and phonon transport in nano-devices," Short Course, 2016 International Conference on Solid State Devices and Materials

• "R-matrix theory and real space DFT simulation of Si nanowire transistors," The 18th International Symposium on the Physics of Semiconductors and Applications

• "NEGF simulation of nanowire transistors," 2015 Osaka University-NCTU Joint Workshop on Modeling and Simulation of Semiconductor Devices

• "Scattering basis representation in quantum transport simulation of nanowire transistors," The 9th International Conference on Computational Physics

• "Quantum transport simulation of statistical variability in nano-scale MOSFETs,"The 6th IEEE international Nanoelectronics Conference 2014

• "R-matrix theory and equivalent model for nanoscale device simulation," 2014 International Workshop on Computational Electronics

• "Nano-device simulation from an atomistic view," 2013 IEEE International Electron Devices Meeting

• "Non-equilibrium Green's function simulation on effects of atomic disorder and random dopant in Si nanowire transistors," 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices

• "Device simulation for nanoscale transistors," 2013 Gate Stack Technology Meeting