Publications

S. A. Mojtahedzadeh, H. Tanaka, and N. Mori, "Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems," Japanese Journal of Applied Physics, Vol. 63, 05SP09 (1-7), 2024, DOI: 10.35848/1347-4065/ad3e89

S. A. Mojtahedzadeh, H. Tanaka, and N. Mori, "Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure," Japanese Journal of Applied Physics, Vol. 63, 031004 (1-10), 2024, DOI: 10.35848/1347-4065/ad2aa3

H. Tanaka, T. Kimoto, and N. Mori, "Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC," Materials Science in Semiconductor Processing, Vol. 173, 108126 (1-8), 2024, DOI: 10.1016/j.mssp.2024.108126

K. Utsumi, H. Tanaka, and N Mori, "Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface," Japanese Journal of Applied Physics, Vol. 63, 02SP75 (1-5), 2024, DOI: 10.35848/1347-4065/ad189c

S. Nagamizo, H. Tanaka, and N. Mori, "Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer," Japanese Journal of Applied Physics, Vol. 63, 02SP62 (1-6), 2024, DOI: 10.35848/1347-4065/ad189a

J. H. Lim and N. Mori, "Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness," Japanese Journal of Applied Physics, Vol. 63, 02SP46 (1-9), 2024, DOI: 10.30.35848/1347-4065/ad15e5

W. Miyazaki, H. Tanaka, and N. Mori, "Full-band Monte Carlo analysis of strain effects on carrier transport in GaN," Japanese Journal of Applied Physics, Vol. 63, 02SP35 (1-14), 2024, DOI: 10.35848/1347-4065/ad1005

J. Okada, H. Tanaka, and N. Mori, "Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness," Applied Physics Express, 16, 091003 (1-4), 2023, DOI: 10.35848/1882-0786/acf5c8

G. Mil'nikov, J. Iwata, N. Mori, and A. Oshiyama, "RSDFT-NEGF transport simulations in realistic nanoscale transistors," Journal of Computational Electronics, 22, 1181-1201, 2023, DOI: 10.1007/s10825-023-02046-4

K. Matsuda, M. Yamamoto, M. Mikawa, S. Nagaoka, N. Mori, and K. Tsutsui, "Effects of hydrogen radical treatment on piezoresistance coefficients of germanium," Applied Physics Express, 16, 041003 (1-4), 2023, DOI: 10.35848/1882-0786/acc8b4

W. Miyazaki, H. Tanaka, and N. Mori, "Tight-binding analysis of the effect of strain on the band structure of GaN," Japanese Journal of Applied Physics, 62, SC1076(1-9), 2023, DOI: 10.35848/1347-4065/acb7fe

J. Okada, N. Mori, and G. Mil'nikov, "Accuracy of equivalent model in band-to-band tunneling simulation of semiconductor nanowires," Japanese Journal of Applied Physics, 62, SC1063(1-7), 2023, DOI: 10.35848/1347-4065/acb3cf

Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Theoretical analysis of tunneling current in 4h-sic schottky barrier diodes under reverse-biased conditions based on the complex band structure," Japanese Journal of Applied Physics, 62, SC1042(1-7),  2023, DOI: 10.35848/1347-4065/acaed2

H. Tanaka, T. Kimoto, and N. Mori, "Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes," Journal of Applied Physics, 131, 225701(1-12), 2022, DOI: 10.1063/5.0090308

N. Mori and G. Mil'nikov, "Electron and phonon transport simulation for quantum hybrid system," In Y. Hirayama, K. Hirakawa, and H. Yamaguchi, editors, Quantum hybrid electronics and materials, chapter 5, pages 73-98. Springer,  2022, DOI: 10.1007/978-981-19-1201-6_5

N. Mori, F. Hashimoto, T. Mishima, and H. Tanaka, "Analytical models for inter-layer tunneling in two-dimensional materials," Japanese Journal of Applied Physics, 61, SC1022(1-9), 2022, DOI: 10.35848/1347-4065/ac3f70

N. Mori, A. Komada, and G. Mil'nikov, "Comparison of linear and quadratic dispersion models for phonon transport in one-dimensional mass-disordered systems,"APL Materials, 9, 08112(1-7), 2021, DOI: 10.1063/5.0058493

R. Negishi, K. Yamamoto, H. Tanaka, S. A. Mojtahedzadeh, N. Mori, and Y. Kobayashi, "Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel," Scientific Reports, 11, 10206(1-11), 2021, DOI: 10.1038/s41598-021-89709-z

F. Hashimoto and N. Mori, "Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides," Japanese Journal of Applied Physics,60, SBBH12(1-9), 2021, DOI: 10.35848/1347-4065/abdad1

J. Okada, F. Hashimoto, and N. Mori, "Reduction of order of device hamiltonian with adaptive moment estimation," Japanese Journal of Applied Physics, 60, SBBH08(1-5), 2021, DOI: 10.35848/1347-4065/abd6df

T. Taniguchi, T. Ishibe, R. Hosoda, Y. Wagatsuma, Md. M. Alam, K. Sawano, M. Uenuma, Y. Uraoka, Y. Yamashita, N. Mori, and Y. Nakamura, "Thermoelectric Si1-xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators," Applied Physics Letters, Vol. 117, 141602 (1-6), 2020, DOI: 10.1063/5.0023820

H. Tanaka and N. Mori, "Analysis of Hall mobility in two-dimensional disordered systems," Semiconductor Science and Technology, Vol. 35, No. 9, 095015 (1-9), 2020, DOI: 10.1088/1361-6641/ab9d0b

H. Tanaka, T. Kimoto, and N. Mori, "Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors," Applied Physics Express, DOI: 10.35848/1882-0786/ab7f16 

Y. Le Thi, Y. Kamakura, and N. Mori, "A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors," Japanese Journal of Applied Physics, DOI: 10.35848/1347-4065/ab7e77 

F. Hashimoto, H. Tanaka, and N. Mori, "Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides," Journal of Physics D: Applied Physics, DOI: 10.1088/1361-6463/ab7ca6 

H. Tanaka and N. Mori, "Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron hall mobility in 4H-SiC MOSFETs," Japanese Journal of Applied Physics, Vol. 59, 031006 (1-11), 2020, DOI: 10.35848/1347-4065/ab7271 

Q. Lv, F. Yan, N. Mori, W. Zhu, C. Hu, Z. R. Kudrynskyi, Z. D. Kovalyuk, Amalia Patanè, and K. Wang, "Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field‐effect transistors," Advanced Functional Materials, 1910713 (1-7), 2020, DOI: 10.1002/adfm.201910713 

S. Sakane, T. Ishibe, K. Mizuta, M. Kashino, K. Watanabe, T. Fujita, Y. Kamakura, N. Mori, and Y. Nakamura, "Methodology of thermoelectric power factor enhancement by nanoscale thermal management in bulk SiGe composites," ACS Applied Energy Materials, Vol. 3, 1235-1241, 2020, DOI: 10.1021/acsaem.9b02340 

Y. Le Thi, Y. Kamakura, and N. Mori, "Evaluation of the optical characteristics of a type-II InAs/GaSb superlattice infrared p-i-n photodetector," Japanese Journal of Applied Physics, Vol. 58, 081003 (1-8), 2019, DOI: 10.7567/1347-4065/ab2b67 

Y. Kajiwara and N. Mori, "Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures," Japanese Journal of Applied Physics, Vol. 58, SDDE05 (1-8), 2019, DOI: 10.7567/1347-4065/ab0df3 

S. Makihira and N. Mori, "Intra-collisional field effect in one-dimensional GaN nanowires," Japanese Journal of Applied Physics, Vol. 58, SCCB26 (1-6), 2019, DOI: 10.7567/1347-4065/ab1067 

T. Hoshino and N. Mori, "Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors," Japanese Journal of Applied Physics, Vol. 58, SCCD10 (1-6) 2019, DOI: 10.7567/1347-4065/ab0409 

S. Sakane, T. Ishibe, T. Taniguchi, N. Naruse, Y. Mera, T. Fujita, Md. M. Alam, K. Sawano, N. Mori, and Y. Nakamura, "Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled si nanostructures," Materials Today Energy, Vol. 13, 56-63, 2019, DOI: 10.1016/j.mtener.2019.04.014

Y. Le Thi, Y. Kamakura, and N. Mori, "Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector", Japanese Journal of Applied Physics, Vol. 58, 044002 (1-7), 2019, DOI: 10.7567/1347-4065/ab03ca 

T. Ishibe, A. Tomeda, K. Watanabe, Y. Kamakura, N. Mori, N. Naruse, Y. Mera, Y. Yamashita, and Y. Nakamura, "Methodology of thermoelectric power factor enhancement by controlling nanowire interface," ACS Applied Materials & Interfaces, Vol. 10, 37709–37716, 2018 [DOI: 10.1021/acsami.8b13528 ].

T. Kuroda and N. Mori, "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions," Japanese Journal of Applied Physics, Vol. 57, 04FP03 (1-6), 2018 [DOI: 10.7567/JJAP.57.04FP03].

T. Hoshino and N. Mori, "Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings," Japanese Journal of Applied Physics, Vol. 57, 04FG06 (1-8), 2018 [DOI: 10.7567/JJAP.57.04FG06].

F. Hashimoto and N. Mori, "Inter-layer coupling effects on vertical electron transport in multilayer graphene nanoribbons,'' Journal of Physics: Conference Series, Vol. 906, 012004 (1-4), 2017 [DOI: 10.1088/1742-6596/906/1/012004].

O. Makarovsky, L. Turyanska, N. Mori, M. Greenaway, L. Eaves, A. Patanè, M. Fromhold, S. Lara-Avila, S. Kubatkin, and R. Yakimova, "Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots," 2D Materials, Vol. 4, No.3, 031001 (1-7), 2017 [DOI: 10.1088/2053-1583/aa76bb]

T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, T. Y. Le, and N. Mori, "The theoretical highest frame rate of silicon image sensors," Sensors, Vol. 17, No. 3, 483 (1-15), 2017 [DOI: 10.3390/s17030483].

F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic states of coupled graphene nanoribbons," Japanese Journal of Applied Physics, Vol. 56, 045001 (1-8), 2017 [DOI: 10.7567/JJAP.56.045001].

L. Turyanska, O. Makarovsky, L. Eaves, A. Patanè, and N. Mori, "Mobility enhancement of CVD graphene by spatially correlated charges," 2D Materials, Vol. 4, 025026 (1-6), 2017 [DOI: 10.1088/2053-1583/aa55b4].

R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence,"Materials Science in Semiconductor Processing [DOI: 10.1016/j.mssp.2016.12.022].

D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, and A. Patane, "Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode," Scientific Reports, Vol. 6, pp. 32039 (1-8), 2016 [DOI: 10.1038/srep32039].

G. Mil'nikov and N. Mori, "Random phonon model of dissipative electron transport in nanowire MOSFETs," Journal of Computational Electronics, Vol. 15, pp. 1179-1191, 2016 [DOI: 10.1007/s10825-016-0865-7].

R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Reductive deposition of thin Cu films using ballistic hot electrons as a printing beam," Journal of The Electrochemical Society, Vol. 163, No. 6, pp. E162-E165, 2016 [DOI: 10.1149/2.0921606jes].

N. Mori, R. J. A. Hill, A. Patane, and L. Eaves, "Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors," Journal of Physics: Conference Series, Vol. 647, pp. 012059 (1-4), 2015 [DOI: 10.1088/1742-6596/647/1/012059].

C. Clendennen, N Mori, and Hideaki Tsuchiya, "Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 171-177, 2015 [DOI: 10.15748/jasse.2.171].

M. Ichii, R. Ishida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Computational study of effects of surface roughness and impurity scattering in Si double-gate junctionless transistors," IEEE Transactions on Electron Devices, Vol. 62, No. 4, pp. 1255-1261, 2015 [DOI: 10.1109/TED.2015.2399954].

R. Suda, M. Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida, "Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films," Japanese Journal of Applied Physics, Vol. 54, No. 4S, pp. 04DH11 (1-5), 2015 [DOI: 10.7567/JJAP.54.04DH11].

S. Koba, R. Ishida, Y. Kubota, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs," Japanese Journal of Applied Physics, Vol. 53, pp. 114301 (1-8), 2014 [DOI: 10.7567/JJAP.53.114301].

Y. Sugiyama, O. Kubo, R. Omura, M. Shigehara, H. Tabata, N. Mori, and M. Katayama, "Spectroscopic study of graphene nanoribbons formed by crystallographic etching of highly oriented pyrolytic graphite," Applied Physics Letters, Vol. 105, pp. 123116 (1-5), 2014 [DOI: 10.1063/1.4896594].

A. V. Velichko, O. Makarovsky, N. Mori, L. Eaves, A. Krier, Q. Zhuang, and A. Patane, "Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels," Physical Review B, Vol. 90, pp. 085309 (1-7), 2014 [DOI: 10.1103/PhysRevB.90.085309].

H. Hirai, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Electron mobility calculation for graphene on substrates," Journal of Applied Physics, Vol. 116, pp. 083703 (1-6), 2014 [DOI: 10.1063/1.4893650].

N. Mori, T. Edagawa, Y. Kamakura, and L. Eaves, "Nonequilibrium Green function simulations of graphene-nanoribbon resonant-tunneling transistors," Japanese Journal of Applied Physics, Vol. 53, pp. 04EN04 (1-5), 2014 [DOI: 10.7567/JJAP.53.04EN04].

S. Kaneko, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport," Applied Physics Express, Vol. 7, pp. 035102 (1-4), 2014 [DOI: 10.7567/APEX.7.035102].

N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, and J. Shirakashia, "Electro-deposition of thin Si and Ge films based on ballistic hot electron injection," ECS Solid State Letters, Vol. 3, pp. P57-P60, 2014 [DOI: 10.1149/2.002405ssl].

S. Koba, M. Ohmori, Y. Maegawa, H. Tsuchiya, Y.  Kamakura, N. Mori, and M. Ogawa, "Channel length scaling limits of III–V channel MOSFETs governed by source-drain direct tunneling," Japanese Journal of Applied Physics, Vol. 53, pp. 04EC10 (1-5), 2014 [DOI: 10.7567/JJAP.53.04EC10].

N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida, "Effects of atomic disorder on impact ionization rate in silicon nanodots," AIP Conference Proceedings, Vol. 1566, pp. 381-382, 2013 [DOI: 10.1063/1.4848445].

G. Mil'nikov and N. Mori, "Universal conductance statistics in a backscattering model: Solving the Dorokhov-Mello-Pereyra-Kumar equation with β = 1, 2, and 4", Physical Review B, Vol. 88, pp. 155406 (1-12), 2013 [DOI: 10.1103/PhysRevB.88.155406].

G. Mil'nikov, N. Mori, and Y. Kamakura, "Scattering basis representation in ballistic transport simulations of nanowire transistors," Mathematical and Computer Modelling, Vol. 58,  No. 1-2, pp. 312-320, 2013 [DOI: 10.1016/j.mcm.2012.11.011].

S. Koba, Y. Maegawa, M. Ohmori, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Increased subthreshold current due to source-drain direct tunneling in ultrashort channel III-V metal-oxide-semiconductor field-effect transistors," Applied Physics Express, Vol. 6, pp. 064301 (1-4), 2013 [DOI: 10.7567/APEX.6.064301].

N. V. Kozlova, G. Pettinari, O. Makarovsky, N. Mori, A. Polimeni, M. Capizzi, Q. D. Zhuang, A. Krier, and A. Patane, "Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities," Physical Review B, Vol. 87, pp. 165207 (1-6), 2013 [DOI: 0.1103/PhysRevB.87.165207].

N. Mori, M. Tomita, H. Minari, T. Watanabe, and N. Koshida, "Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array," Japanese Journal of Applied Physics, Vol. 52, No. 4, pp. 04CJ04 (1-4), 2013 [DOI: 10.7567/JJAP.52.04CJ04].

K. Shimoida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Performance comparison of InAs, InSb, and GaSb n-channel nanowire metal-oxide-semiconductor field-effect transistors in the ballistic transport limit," Applied Physics Express, Vol. 6, No. 3, pp. 034301 (1-4), 2013 [DOI: 10.7567/APEX.6.034301].

G. Mil'nikov and N. Mori, "Random evolution approach to universal conductance statistics," Physical Review B, Vol. 87, pp. 035434 (1-4), 2013 [DOI: 10.1103/PhysRevB.87.035434].

T. Numata, S. Uno, J. Hattori, G. Mil'nikov, Y. Kamakura, N. Mori, and K. Nakazato, "A self-consistent compact model of ballistic nanowire MOSFET with rectangular cross section," IEEE Transactions on Electron Devices, Vol. 60, No. 2, pp. 856-862, 2013 [DOI: 10.1109/TED.2012.2232928].

M. Uematsu, K. M Itoh, G. Mil'nikov, H. Minari, and N. Mori, "Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance," Nanoscale Research Letters, Vol. 7, pp. 685 (1-6), 2012 [DOI: 10.1186/1556-276X-7-685].

N. V. Kozlova, N. Mori, O. Makarovsky, L. Eaves, Q. D. Zhuang, A. Krier, and A. Patane, "Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor," Nature Communications, Vol. 3, pp. 1097 (1-5), 2012 [DOI: 10.1038/ncomms2106].

N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida, "Strain effects on avalanche multiplication in a silicon nanodot array," Japanese Journal of Applied Physics, Vol. 51, pp. 04DJ01 (1-5), 2012 [DOI: 10.1143/JJAP.51.04DJ01].

N. Mori, A. Patane, and L. Eaves, "Theory of resonant tunneling through a donor state," Japanese Journal of Applied Physics, Vol. 51, pp. 02BJ02 (1-4), 2012 [DOI: 10.1143/JJAP.51.02BJ02].

G. Mil'nikov, N. Mori, and Y. Kamakura, "Equivalent transport models in atomistic quantum wires," Physical Review B, Vol. 85, pp. 035317 (1-11), 2012 [DOI: 10.1103/PhysRevB.85.035317].

S. Uno, J. Hattori, K. Nakazato, and N. Mori, "Acoustic phonon modulation and electron-phonon interaction in semiconductor slabs and nanowires," Journal of Computational Electronics, Vol. 10, pp. 104-120, 2011 [DOI: 10.1007/s10825-010-0343-6].

G. Mil'nikov, N. Mori, and Y. Kamakura, "Application of the R-matrix method in quantum transport simulations: Continuous model," Journal of Computational Electronics, Vol. 10, pp. 51-64, 2011 [DOI: 10.1007/s10825-010-0321-z].

N. Mori, H. Minari, S. Uno, and J. Hattori, "Ellipsoidal band structure effects on maximum ballistic current in silicon nanowires," Japanese Journal of Applied Physics, Vol. 50, pp. 04DN09 (1-3), 2011 [DOI: 0.1143/JJAP.50.04DN09].

N. Mori and T. Ando, "Magnetophonon resonance in monolayer graphene," Journal of the Physical Society of Japan, Vol. 80, pp. 044706 (1-6), 2011 [DOI: 10.1143/JPSJ.80.044706].

N. Mori, Y. Kamakura, G. Mil'nikov, and H. Minari, "Discrete dopant effects on threshold voltage variation in double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors," Key Engineering Materials, Vol. 470, pp. 218-223, 2011.

Y. Kamakura, T. Zushi, T. Watanabe, N. Mori, and K. Taniguchi, "Impact of self-heating effect on the electrical characteristics of nanoscale devices," Key Engineering Materials, Vol. 470, pp. 14-19, 2011.

N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida, "Theory of quasiballistic transport through nanocrystalline silicon dots," Applied Physics Letters, Vol. 98, pp. 062104 (1-3), 2011 [DOI: 10.1063/1.3553501].

A. Patane, N. Mori, O. Makarovsky, L. Eaves, M. L. Zambrano, J. C. Arce, L. Dickinson, and D. K. Maude, "Manipulating and imaging the shape of an electronic wave function by magnetotunneling spectroscopy," Physical Review Letters, Vol. 105, pp. 236804 (1-4), 2010.

G. Mil'nikov, N. Mori, and Y. Kamakura, "Application of the R-matrix method in quantum transport simulations: Tight-binding model," Journal of Computational Electronics, Vol. 9, pp. 256-261, 2010.

H. Minari and N. Mori, "Hole transport mechanism in silicon and germanium nanowire field effect transistors," Japanese Journal of Applied Physics, Vol. 49, pp. 04DN04 (1-4), 2010.

N. Mori and H. Minari, "Impact of interface roughness on threshold-voltage variation in ultrasmall gate-all-around and double-gate field-effect transistors," Japanese Journal of Applied Physics, Vol. 49, pp. 04DC05 (1-4), 2010.

J. Hattori, S. Uno, N. Mori, and K. Nakazato, "Electron-modulated-acoustic-phonon interactions in a coated silicon nanowire," Japanese Journal of Applied Physics, Vol. 49, pp. 04DN09 (1-6), 2010.

T. Numata, S. Uno, K. Nakazato, Y. Kamakura, and N. Mori, "Analytical compact model of ballistic cylindrical nanowire metal-oxide-semiconductor field-effect transistor," Japanese Journal of Applied Physics, Vol. 49, pp. 04DN05 (1-6), 2010.

Y. Kamakura, G. Mil'nikov, N. Mori, and K. Taniguchi, "Impact of attractive ion in undoped channel on characteristics of nanoscale multigate field effect transistors: A three-dimensional nonequilibrium Green's function study," Japanese Journal of Applied Physics, Vol. 49, pp. 04DC19 (1-5), 2010.

H. Minari and N. Mori, "A computationally cost-effective interleaving method for atomistic non-equilibrium Green's function simulation," Mathematical and Computer Modelling, Vol. 51, pp. 888-892, 2010.

J. Hattori, S. Uno, N. Mori, and K. Nakazato, "Universality in electron-modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire," Mathematical and Computer Modelling, Vol. 51, pp. 880-887, 2010.

S. Uno, J. Hattori, K. Nakazato, and N. Mori, "Form factor increase and its physical origins in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate," Mathematical and Computer Modelling, Vol. 51, pp. 863-872, 2010.

J. Hattori, S. Uno, K. Nakazato, and N. Mori, "Scaling consideration and compact model of electron scattering enhancement due to acoustic phonon modulation in an ultrafine free-standing cylindrical semiconductor nanowire," Journal of Applied Physics, Vol. 107, pp. 033712 (1-7), 2010.

G. Mil'nikov, N. Mori, and Y. Kamakura, "R-matrix method for quantum transport simulations in discrete systems," Physical Review B, Vol. 79, pp. 235337 (1-5), 2009.

S. Uno, D. Yong, and N. Mori, "Sum rules and universality in electron-modulated acoustic phonon interaction in a free-standing semiconductor plate," Physical Review B, Vol. 79, pp. 235328 (1-7), 2009.

G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, "Dopant-induced intrinsic bistability in a biased nanowire," Physical Review Letters, Vol. 102, pp. 036801 (1-4), 2009.

G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, "Solution of the Poisson equation with Coulomb singularities," Japanese Journal of Applied Physics, Vol. 47, pp. 7765-7770, 2008.

H. Minari and N. Mori, "Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs," Journal of Computational Electronics, Vol. 7, pp. 293-296, 2008.

N. Mori, H. Takeda, and H. Minari, "Effects of phonon scattering on electron transport in double-gate MOSFETs," Journal of Computational Electronics, Vol. 7, pp. 268-271, 2008.

G. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, "R-matrix theory of quantum transport and recursive propagation method for device simulations," Journal of Applied Physics, Vol. 104, pp. 044506 (1-14), 2008.

G. V. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, "R-matrix theory of quantum transport in nanoscale electronic devices," Applied Physics Express, Vol. 1, pp. 063001 (1-3), 2008.

H. Minari and N. Mori, "Impact of strain on ballistic current in Si n-i-n structures," Japanese Journal of Applied Physics, Vol. 47, pp. 2621-2623, 2008.

H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, "Phonon scattering of hot electrons in intense mid-infrared laser fields," Physica Status Solidi (c), Vol. 5, pp. 286-289, 2008.

N. Mori, G. Allison, A. Patane, and L. Eaves, "Resonant tunneling through a dilute nitride quantum well," Physica Status Solidi (c), Vol. 5, pp. 198-202, 2008.

D. Fowler, D. A. Hardwick, A. Patane, M. T. Greenaway, A. G. Balanov, T. M. Fromhold, L. Eaves, M. Henini, N. Kozlova, J. Freudenberger, and N. Mori, "Magnetic-field-induced miniband conduction in semiconductor superlattices," Physical Review B, Vol. 76, pp. 245303 (1-6), 2007.

H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, "Transmission study of germanium using free-electron laser," Journal of Materials Science: Materials in Electronics, Vol. 18, pp. S81-S85, 2007.

S. Uno and N. Mori, "Analytical description of intravalley acoustic phonon limited electron mobility in ultrathin Si plate incorporating phonon modulation due to plate interfaces," Japanese Journal of Applied Physics, Vol. 46, pp. L923-L926, 2007.

G. V. Mil'nikov, N. Mori, Y. Kamakura, and T. Ezaki, "Implementation of the Bloch operator method for solving the Poisson equation," Japanese Journal of Applied Physics, Vol. 46, pp. 5734-5737, 2007.

H. Minari and N. Mori, "Numerical simulation of hole transport in silicon nanostructures," Journal of Computational Electronics, Vol. 6, pp. 223-225, 2007.

H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, "Measurement of the temperature dependence of midinfrared optical absorption spectra of germanium in intense laser fields," Physical Review B, Vol. 75, pp. 205101 (1-5), 2007.

H. Minari and N. Mori, "Effects of strained layers on Zener tunneling in silicon nanostructures," Japanese Journal of Applied Physics, Vol. 46, pp. 2076-2078, 2007.

H. Furuse, N. Mori, H. Kubo, H. Momose, and M. Kondow, "Midinfrared optical absorption in germanium measured with a free-electron laser at room temperature," Physical Review B, Vol. 74, pp. 205206 (1-6), 2006.

G. Allison, N. Mori, A. Patane, J. Endicott, L. Eaves, D. K. Maude, and M. Hopkinson, "Strong effect of resonant impurities on Landau-level quantization," Physical Review Letters, Vol. 96, pp. 236802 (1-4), 2006.

H. Momose, H. Okai, H. Deguchi, N. Mori, and S. Takeyama, "Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates," Physica E, Vol. 32, pp. 309-312, 2006.

D. Fowler, A. Patane, A. Ignatov, L. Eaves, M. Henini, N. Mori, D. K. Maude, and R. Airey, "Current flow and energy dissipation in low-dimensional semiconductor superlattices," Applied Physics Letters, Vol. 88, pp. 052111 (1-3), 2006.

H. Momose, H. Deguchi, H. Okai, N. Mori, and S. Takeyama, "Impurity cyclotron resonance in InGaAs/AlAs superlattice under ultra high magnetic fields," Physica E, Vol. 29, pp. 606-608, 2005.

H. Takeda and N. Mori, "Three-dimensional quantum transport simulation of ultra-small FinFETs," Journal of Computational Electronics, Vol. 4, pp. 31-34, 2005.

S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta, "Theoretical investigation of electron-phonon interaction in one-dimensional silicon quantum dot array interconnected with silicon oxide layers," Physical Review B, Vol. 72, pp. 035337 (1-11), 2005.

S. Uno, N. Mori, K. Nakazato, N. Koshida, and H. Mizuta, "Reduction of acoustic-phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides," Journal of Applied Physics, Vol. 97, pp. 113506(1-6), 2005.

H. Takeda and N. Mori, "Mode-coupling effects in non-equilibrium Green's function device simulation," Japanese Journal of Applied Physics, Vol. 44, pp. 2664-2668, 2005.

H. Takeda, N. Mori, and K. Yoshino, "Effective-mass theory of graphite/porous-graphite quantum wires," Journal of Physics D: Applied Physics, Vol. 38, pp. 1205-1210, 2005.

N. Mori, C. Hamaguchi, A. Patane, T. M. Fromhold, and L. Eaves, "Resonant transport in semiconductor superlattices in a tilted magnetic field," International Journal of Modern Physics B, Vol. 18, pp. 3617-3620, 2004.

M. Okamoto and N. Mori, "Numerical simulation for direct tunneling current in poly-Si-gate MOS capacitors," Journal of Computational Electronics, Vol. 3, pp. 439-442, 2004.

A. Patane, N. Mori, D. Fowler, L. Eaves, M. Henini, D. K. Maude, C. Hamaguchi, and R. Airey, "Magnetic-field-induced suppression of electronic conduction in a superlattice," Physical Review Letters, Vol. 93, pp. 146801 (1-4), 2004.

T. Takahashi, T. Kambayashi, H. Kubo, N. Mori, N. Tsubouchi, L. Eaves, and C. T. Foxon, "Study of electron dynamics in n-type GaN using the Osaka free electron laser," Nuclear Instruments and Methods in Physics Research A, Vol. 528, pp. 623-626, 2004.

N. Mori, A. Patane, and L. Eaves, "Nonequilibrium Green's function approach to resonant transport in semiconductor superlattices," Physica E, Vol. 21, pp. 717-721, 2004.

T. Takahashi and N. Mori, "Full-band Monte Carlo study on free electron laser induced impact ionization in wurtzite GaN," Semiconductor Science and Technology, Vol. 19, pp. S457-S459, 2004.

N. Mori and H. Takeda, "Monte Carlo study of two-dimensional hole transport in a GaAs quantum well," Semiconductor Science and Technology, Vol. 19, pp. S17-S19, 2004.

H. Takeda, N. Mori, and C. Hamaguchi, "Quantum effects on transport characteristics in ultra-small MOSFETs," Journal of Computational Electronics, Vol. 2, pp. 119-122, 2003.

M. Kobayashi, S. Miyahara, N. Mori, and C. Hamaguchi, "Electron transport in quantum dot arrays: Self-consistent modeling," Physica E, Vol. 19, pp. 188-191, 2003.

H. Takeda, N. Mori, and C. Hamaguchi, "Study of electron transport in SOI MOSFETs using Monte Carlo technique with full-band modeling," Journal of Computational Electronics, Vol. 1, pp. 467-474, 2002.

N. Mori, C. Hamaguchi, A. Patane, L. Eaves, and P. C. Main, "Magneto-tunneling spectroscopy of quantum structures," Microelectronic Engineering, Vol. 63, pp. 109-114, 2002.

N. Mori, C. Hamaguchi, L. Eaves, and P. C. Main, "Temperature dependence of the conductance in quasi-one-dimensional superlattices," Microelectronic Engineering, Vol. 63, pp. 87-90, 2002.

H. Takeda, N. Mori, and C. Hamaguchi, "Full-band Monte Carlo simulation of two-dimensional electron gas in SOI MOSFETs," Journal of Computational Electronics, Vol. 1, pp. 219-222, 2002.

A. Patane, R. J. A. Hill, L. Eaves, P. C. Main, M. Henini, M. L. Zambrano, A. Levin, N. Mori, C. Hamaguchi, Y. V. Dubrovskii, E. E. Vdovin, D. G. Austing, S. Tarucha, and G. Hill, "Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy," Physical Review B, Vol. 65, pp. 165308 (1-12), 2002.

N. Mori, T. Ishida, Y. Takamura, and C. Hamaguchi, "Transport in quantum dot arrays," Physica E, Vol. 13, pp. 667-670, 2002.

N. Mori, T. Takahashi, T. Kambayashi, H. Kubo, C. Hamaguchi, L. Eaves, C. T. Foxon, A. Patane, and M. Henini, "Study of electron-hole generation and recombination in semiconductors using the Osaka free electron laser," Physica B, Vol. 314, pp. 431-436, 2002.

H. Takeda, N. Mori, and C. Hamaguchi, "Self-consistent calculation of two-dimensional electronic states in SOI-MOSFETs using full-band modeling," Physica B, Vol. 314, pp. 377-380, 2002.

T. Takahashi, T. Kambayashi, N. Mori, H. Kubo, C. Hamaguchi, and N. Tsubouchi, "Luminescence from p-type GaAs crystals under intense mid-infrared irradiation," Japanese Journal of Applied Physics, Vol. 41, Suppl. 41-1, pp. 88-89, 2002.

N. Mori, C. Hamaguchi, L. Eaves, and P. C. Main, "Numerical studies of miniband conduction in quasi-one-dimensional superlattices," VLSI Design, Vol. 13, pp. 45-50, 2001.

N. Mori, C. Hamaguchi, L. Eaves, and P. C. Main, "Monte Carlo simulation of miniband conduction in Landau-quantized superlattices," Physica B, Vol. 298, pp. 329-332, 2001.

J. H. Park, S. Senzaki, N. Mori, and C. Hamaguchi, "Reduction of electron decay time using disordered tunnel barrier," Japanese Journal of Applied Physics, Vol. 40, pp. 1970-1972, 2001.

P. C. Main, T. J. Foster, P. McDonnell, L. Eaves, M. J. Gompertz, N. Mori, J. W. Sakai, M. Henini, and G. Hill, "Conductance fluctuations in a double-barrier resonant tunneling device," Physical Review B, Vol. 62, pp. 16721-16726, 2000.

H. Nakano, H. Kubo, N. Mori, C. Hamaguchi, and L. Eaves, "Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses," Physica E, Vol. 7, pp. 555-558, 2000.

H. Momose, S. Uehara, N. Mori, C. Hamaguchi, H. Arimoto, T. Ikaida, and N. Miura, "Cyclotron masses in InGaAs/GaAs superlattices and InGaAs/AlAs superlattices," Superlattices and Microstructures, Vol. 27, pp. 525-528, 2000.

J. H. Park, S. Senzaki, N. Mori, and C. Hamaguchi, "Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures," Superlattices and Microstructures, Vol. 27, pp. 505-508, 2000.

S. Araya, K. Yamasaki, H. Ueno, N. Mori, C. Hamaguchi, L. M. Perron, and A. L. Lacaita, "Monte Carlo simulation of conductance characteristics in SOI-MOSFET," Physica B, Vol. 272, pp. 565-567, 1999.

N. Mori, H. Nakano, H. Kubo, C. Hamaguchi, and L. Eaves, "Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses," Physica B, Vol. 272, pp. 431-433, 1999.

L. Eaves, H. M. Murphy, A. Nogaret, S. T. Stoddart, P. C. Main, M. Henini, N. Mori, C. Hamaguchi, D. K. Maude, and J.-C. Portal, "Magnetic field quenching of miniband conduction in quasi-one-dimensional superlattices," Physica B, Vol. 272, pp. 190-193, 1999.

H. Momose, N. Mori, C. Hamaguchi, T. Ikaida, H. Arimoto, and N. Miura, "Impurity cyclotron resonance in type-I GaAsn /AlAsn superlattices," Materials Science and Engineering B, Vol. 64, pp. 137-141, 1999.

H. Momose, N. Mori, C. Hamaguchi, T. Ikaida, H. Arimoto, and N. Miura, "Cyclotron resonances in (GaAs)n /(AlAs)n superlattices under ultra-high magnetic fields," Physica E, Vol. 4, pp. 286-291, 1999.

H. Ueno, K. Moriyasu, Y. Wada, S. Osako, H. Kubo, N. Mori, and C. Hamaguchi, "Conductance through zigzag quantum dots arrays," Microelectronic Engineering, Vol. 47, pp. 127-129, 1999.

H. M. Murphy, L. Eaves, A. Nogaret, S. T. Stoddart, P. C. Main, M. Henini, N. Mori, C. Hamaguchi, D. K. Maude, and J.-C. Portal, "New developments in superlattice transport: quenching of miniband conduction in high magnetic fields," Microelectronic Engineering, Vol. 47, pp. 65-68, 1999.

J. H. Park, S. Ozaki, N. Mori, and C. Hamaguchi, "Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells," Superlattices and Microstructures, Vol. 25, pp. 445-451, 1999.

H. Ueno, K. Moriyasu, Y. Wada, S. Osako, H. Kubo, N. Mori, and C. Hamaguchi, "Conductance through laterally coupled quantum dots," Japanese Journal of Applied Physics, Vol. 38, pp. 332-335, 1999.

H. M. Murphy, A. Nogaret, S. T. Stoddart, L. Eaves, P. C. Main, M. Henini, D. K. Maude, N. Mori, and C. Hamaguchi, "A study of miniband conduction in Wannier-Stark superlattices at high magnetic fields," Physica B, Vol. 256-258, pp. 544-547, 1998.

T. Ezaki, N. Mori, and C. Hamaguchi, "Electron-LA phonon interaction in a quantum dot," VLSI Design, Vol. 8, pp. 225-230, 1998.

H. Nakano, J. Feng, H. Kubo, N. Mori, and C. Hamaguchi, "Luminescence of GaAs/AlGaAs asymmetric double-quantum-well excited by mid-IR free electron laser," Nuclear Instruments and Methods in Physics Research B, Vol. 144, pp. 160-165, 1998.

S. Osako, T. Hamano, N. Mori, C. Hamaguchi, S. Sasa, and M. Inoue, "Magnetophonon and magneto-intersubband-scattering effects in InAs/AlGaSb heterostructures," Physica B, Vol. 249-251, pp. 740-744, 1998.

T. Ezaki, Y. Sugimoto, N. Mori, and C. Hamaguchi, "Electronic structures in a quantum dot with asymmetric confining potential," Physica B, Vol. 249-251, pp. 238-242, 1998.

T. Ezaki, Y. Sugimoto, N. Mori, and C. Hamaguchi, "Electronic properties in quantum dots with asymmetric confining potential," Semiconductor Science and Technology, Vol. 13, pp. A1-A3, 1998.

S. Osako, T. Hamano, K. Yamasaki, K. Moriyasu, N. Mori, C. Hamaguchi, S. Sasa, and M. Inoue, "Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures," Semiconductor Science and Technology, Vol. 13, pp. 181-184, 1998.

S. Ozaki, J. M. Feng, J. H. Park, S. Osako, H. Kubo, M. Morifuji, N. Mori, and C. Hamaguchi, "Observation of resonant optical-phonon assisted tunneling in asymmetric double quantum wells," Journal of Applied Physics, Vol. 83, pp. 962-965, 1998.

J. M. Feng, S. Ozaki, J. H. Park, H. Kubo, N. Mori, and C. Hamaguchi, "Optical-phonon assisted tunneling in an asymmetric double-quantum-well structure," Physica Status Solidi (b), Vol. 204, pp. 412-415, 1997.

T. Ezaki, N. Mori, and C. Hamaguchi, "Energy relaxation time of electrons in quantum dots," Physica Status Solidi (b), Vol. 204, pp. 272-274, 1997.

N. Mori, H. Momose, and C. Hamaguchi, "Self-consistent approximation for electron-optical-phonon interaction in a quantum wire," Physica Status Solidi (b), Vol. 204, pp. 268-271, 1997.

T. Ezaki, N. Mori, and C. Hamaguchi, "Electronic structures in circular, elliptic, and triangular quantum dots," Physical Review B, Vol. 56, pp. 6428-6431, 1997.

J. M. Feng, J. H. Park, S. Ozaki, H. Kubo, N. Mori, and C. Hamaguchi, "Resonant optical-phonon assisted tunnelling in an asymmetric double-quantum-well structure," Semiconductor Science and Technology, Vol. 12, pp. 1116-1120, 1997.

K. Moriyasu, S. Osako, N. Mori, and C. Hamaguchi, "Effect of quantum confinement and lattice relaxation on electronic states in GaAs/In0.2Ga0.8As/GaAs quantum dots," Japanese Journal of Applied Physics, Vol. 36, pp. 3932-3935, 1997.

N. Miura, Y. Shimamoto, Y. Imanaka, H. Arimoto, H. Nojiri, H. Kunimatsu, K. Uchida, T. Fukuda, K. Yamanaka, H. Momose, N. Mori, and C. Hamaguchi, "Low-dimensional systems in ultra-high magnetic-fields: magnetic-field-induced type I to type II transitions in short-period semiconductor superlattices," Semiconductor Science and Technology, Vol. 11, pp. 1586-1590, 1996.

P. McDonnell, T. J. Foster, P. C. Main, L. Eaves, N. Mori, J. W. Sakai, M. Henini, and G. Hill, "Mesoscopic conductance fluctuations in impurity-assisted resonant tunnelling," Solid-State Electronics, Vol. 40, pp. 409-412, 1996.

K. Yamanaka, H. Momose, N. Mori, C. Hamaguchi, H. Arimoto, Y. Imanaka, Y. Shimamoto, and N. Miura, "Angular dependent cyclotron resonance in short period (GaAs)n /(AlAs)n superlattices," Physica B, Vol. 227, pp. 356-359, 1996.

T. Fukuda, K. Yamanaka, H. Momose, N. Mori, C. Hamaguchi, Y. Imanaka, Y. Shimamoto, and N. Miura, "Cyclotron resonance in short period (GaAs)n /(AlAs)n superlattices," Surface Science, Vol. 361/362, pp. 406-410, 1996.

J. G. S. Lok, A. K. Geim, J. C. Maan, I. Marmorkos, F. M. Peeters, N. Mori, L. Eaves, P. McDonnell, M. Henini, J. W. Sakai, and P. C. Main, "Resonant tunnelling through D- states," Surface Science, Vol. 361/362, pp. 247-250, 1996.

J. G. S. Lok, A. K. Geim, J. C. Maan, I. Marmorkos, F. M. Peeters, N. Mori, L. Eaves, T. J. Foster, P. C. Main, J. W. Sakai, and M. Henini, "D- centers probed by resonant tunneling spectroscopy," Physical Review B, Vol. 53, pp. 9554-9557, 1996.

J. Wang, P. H. Beton, N. Mori, L. Eaves, P. C. Main, T. J. Foster, and M. Henini, "A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodes," Materials Science and Engineering B, Vol. 35, pp. 192-197, 1995.

P. H. Beton, J. Wang, N. Mori, L. Eaves, P. C. Main, T. J. Foster, and M. Henini, "Measuring the probability density of quantum confined states," Physical Review Letters, Vol. 75, pp. 1996-1999, 1995.

B. R. A. Neves, N. Mori, P. H. Beton, L. Eaves, J. Wang, and M. Henini, "Landau-level populations and slow energy relaxation of a two-dimensional electron gas probed by tunneling spectroscopy," Physical Review B, Vol. 52, pp. 4666-4669, 1995.

N. Mori, P. H. Beton, J. Wang, and L. Eaves, "Effect of a parallel magnetic field on the resonant-tunneling current through a quantum wire," Physical Review B, Vol. 52, pp. 1504-1507, 1995.

P. H. Beton, J. Wang, N. Mori, L. Eaves, H. Buhmann, L. Mansouri, P. C. Main, T. J. Foster, and M. Henini, "Resonant magnetotunneling via quantum-confined states," Physica B, Vol. 211, pp. 423-429, 1995.

H. Buhmann, L. Mansouri, J. Wang, P. Beton, N. Mori, L. Eaves, and M. Henini, "Electron-concentration-dependent quantum-well luminescence: Evidence for a negatively charged exciton," Physical Review B (Rapid Communications), Vol. 51, pp. 7969-7972, 1995.

N. Mori, P. H. Beton, J. Wang, and L. Eaves, "Theory of resonant tunnelling through a quantum wire," Physical Review B, Vol. 51, pp. 1735-1742, 1995.

P. H. Beton, H. Buhmann, L. Eaves, T. J. Foster, A. K. Geim, N. L. Scala, Jr., P. C. Main, L. Mansouri, N. Mori, J. W. Sakai, and J. Wang, "Resonant tunnelling quantum dots and wires: some recent problems and progress," Semiconductor Science and Technology, Vol. 9, pp. 1912-1918, 1994.

A. K. Geim, T. J. Foster, A. Nogaret, N. Mori, P. J. McDonnell, N. L. Scala, Jr., P. C. Main, and L. Eaves, "Resonant tunnelling through donor molecules," Physical Review B (Rapid Communications), Vol. 50, pp. 8074-8077, 1994.

J. Wang, P. H. Beton, N. Mori, L. Eaves, H. Buhmann, L. Mansouri, P. C. Main, T. J. Foster, and M. Henini, "Resonant magnetotunneling via one-dimensional quantum confined states," Physical Review Letters, Vol. 73, pp. 1146-1149, 1994.

J. Wang, P. H. Beton, N. Mori, H. Buhmann, L. Mansouri, L. Eaves, P. C. Main, T. J. Foster, and M. Henini, "Submicron resonant tunnelling diodes fabricated by photolithography and selective wet etching," Applied Physics Letters, Vol. 65, pp. 1124-1126, 1994.

C. Hamaguchi, N. Mori, H. Momose, T. Ezaki, G. Berthold, J. Smoliner, E. Gornik, G. Bohm, G. Weimann, T. Suski, and P. Wisniewski, "Magnetophonon resonance in quantum wires," Physica B, Vol. 201, pp. 339-344, 1994.

H. Momose, N. Mori, K. Taniguchi, and C. Hamaguchi, "New model for Monte Carlo simulation of hot electrons in quantum wires," Semiconductor Science and Technology, Vol. 9, pp. 958-960, 1994.

N. Mori and C. Hamaguchi, "Hot-electron transport in quantum structures," Semiconductor Science and Technology, Vol. 9, pp. 941-945, 1994.

T. Miyatake, S. Horihata, T. Ezaki, H. Kubo, N. Mori, K. Taniguchi, and C. Hamaguchi, "GaAs/AlGaAs quantum well infrared detectors," Solid-State Electronics, Vol. 37, pp. 1187-1190, 1994.

B. Berthold, J. Smoliner, E. Gornik, G. Bohm, G. Weimann, T. Suski, P. Wisniewski, C. Hamaguchi, N. Mori, and H. Momose, "Magnetophonon resonances in quantum wires," Surface Science, Vol. 305, pp. 637-642, 1994.

G. Berthold, J. Smoliner, C. Wirner, E. Gornik, G. Bohm, G. Weimann, M. Hauser, C. Hamaguchi, N. Mori, and H. Momose, "Magnetophonon resonances in quantum wires," Semiconductor Science and Technology, Vol. 8, pp. 735-738, 1993.

N. Mori and C. Hamaguchi, "Electron tunnelling in GaAs/AlGaAs/GaAs single-barrier heterojunction diodes: electron-phonon interaction effects," Semiconductor Science and Technology, Vol. 8, pp. 197-205, 1993.

N. Mori, K. Taniguchi, and C. Hamaguchi, "Effects of electron-interface-phonon interaction on resonant tunneling in double-barrier heterostructures," Semiconductor Science and Technology, Vol. 7, pp. B83-B87, 1992.

N. Mori, H. Momose, and C. Hamaguchi, "Magnetophonon resonances in quantum wires," Physical Review B (Rapid Communications), Vol. 45, pp. 4536-4539, 1992.

C. Hamaguchi and N. Mori, "Magnetophonon resonance in semiconductors," Physica B, Vol. 164, pp. 85-96, 1990.

N. Mori and T. Ando, "Electron-optical-phonon interaction in single and double heterostructures," Physical Review B, Vol. 40, pp. 6175-6188, 1989.

N. Mori, H. Murata, K. Taniguchi, and C. Hamaguchi, "Magnetophonon-resonance theory of the two-dimensional electron gas in Alx Ga1-x As/GaAs single heterostructures," Physical Review B, Vol. 38, pp. 7622-7634, 1988.

N. Mori, K. Taniguchi, C. Hamaguchi, S. Sasa, and S. Hiyamizu, "Magnetophonon resonance of a two-dimensional electron gas in a quantum well," Journal of Physics C: Solid State Physics, Vol. 21, pp. 1791-1805, 1988.

N. Mori, N. Nakamura, K. Taniguchi, and C. Hamaguchi, "Electric field-induced magnetophonon resonance," Solid-State Electronics, Vol. 31, pp. 777-780, 1988.

N. Mori, N. Nakamura, K. Taniguchi, and C. Hamaguchi, "Magnetophonon resonance at high electric and magnetic fields in small n+nn+ GaAs structures," Journal of the Physical Society of Japan, Vol. 57, pp. 205-216, 1988.

N. Mori, N. Nakamura, K. Taniguchi, and C. Hamaguchi, "Magnetophonon resonance in crossed high electric and magnetic field in small n+nn+ GaAs structure," Semiconductor Science and Technology (Letter to the Editor), Vol. 2, pp. 542-546, 1987.