January 19 - 21, 2021 (JST)
International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
Venue: Online (zoom)
Registration fee: Free of charge
The International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021) will be held online from January 19 to 21, 2021 (JST). The Symposium will present high-impact scientific and technological advances in growth, process and device simulations based on wide bandgap semiconductors: III-nitrides, SiC, oxides, diamond and so on.
Plenary Speaker
Atsushi Oshiyama
Nagoya University
Keynote Speakers
Mauro Boero
University of Strasbourg
Stanislaw Krukowski
Institute of High Pressure Physics, PAS
Pawel Kempisty
Institute of High Pressure Physics, PAS
Yosuke Harashima
Nagoya University
Masato Oda
Wakayama University
Yu-ichiro Matsushita
Tokyo Institute of Technology
Iza Gorczyca
Institute of High Pressure Physics, PAS
Nobuya Mori
Osaka University
Akira Kusaba
Kyushu University
Toru Akiyama
Mie University
Yoshinao Kumagai
Tokyo University of Agriculture and Technology
Invited Speakers
Takahiro Kawamura
Mie University
Konrad Sakowski
Institute of High Pressure Physics, PAS
Zheng Ye
Nagoya University
Satoshi Watanabe
The University of Tokyo
Outstanding Poster Award
Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama,
Atomic and electronic structures at the (Al2O3)1-x(SiO2)x/GaN interfacesSoma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi,
Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth
Sponsors
Sponsor
Nanocrystalline Materials and Epitaxial Growth Division, the Japanese Association for Crystal Growth (JACG)