The International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021) will be held online from January 19 to 21, 2021 (JST). The Symposium will present high-impact scientific and technological advances in growth, process and device simulations based on wide bandgap semiconductors: III-nitrides, SiC, oxides, diamond and so on.
Nagoya University
University of Strasbourg
Institute of High Pressure Physics, PAS
Institute of High Pressure Physics, PAS
Nagoya University
Wakayama University
Tokyo Institute of Technology
Institute of High Pressure Physics, PAS
Osaka University
Kyushu University
Mie University
Tokyo University of Agriculture and Technology
Mie University
Institute of High Pressure Physics, PAS
Nagoya University
The University of Tokyo
Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama,
Atomic and electronic structures at the (Al2O3)1-x(SiO2)x/GaN interfaces
Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi,
Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth
Nanocrystalline Materials and Epitaxial Growth Division, the Japanese Association for Crystal Growth (JACG)