Program

Structures, electron states and reactions on growing surfaces and at device interfaces of SiC and GaN

Kieu My Bui 1, Yu-ichiro Matsushita 2, Kenta Chokawa 1, Mauro Boero 1,3, Yoshihiro Kangawa1,4, Kenji Shiraishi 1, and Atsushi Oshiyama 1
1 Nagoya University
2 Tokyo Institute of Technology
3 University of Strasbourg
4 Kyushu University

[Keynote 11]
Thermodynamic and experimental study of β-Ga2O3 growth by halide vapor phase epitaxy for fabrication of epitaxial wafers for power device applications

Yoshinao Kumagai1,2, Ken Goto1, Hisashi Murakami1,2, Akito Kuramata3, Shigenobu Yamakoshi4, and Masataka Higashiwaki5
1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
2Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
3Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan
4Tamura Corporation, Sayama, Saitama 350-1328, Japan
5National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan

[Invite 4: Program chair's pick] Study of thermal transport properties of GaN using high-dimensional neural network potentials

Satoshi Watanabe1 Koji Shimizu1 and Emi Minamitani2
1 Dept. Materials Eng., UTokyo
2 Inst. Molecular Sci.

[Oral 1] Numerical analysis of dynamic punch-through phenomenon in vertical GaN MOSFET structure with considering the Poole-Frenkel effect

Shohei Rokuno1, and Jun Suda1, 2

1 Nagoya University

2 IMaSS, Nagoya University

[Oral 2] Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability

Daichi Yosho1, Yuriko Matsuo2, Pawel Kempisty2, Akira Kusaba2, Yoshihiro Kangawa1, 2

1Dept. Aeronautics and Astronautics, Kyushu University

2Research Institute for Applied Mechanics, Kyushu University

[Poster 1] Step morphology on SiC surfaces by real-space density-functional calculations

Kaori Seino and Atsushi Oshiyama

Institute of Materials and Systems for Sustainability, Nagoya University

[Poster 2] First-principles calculations on the complex of Mg, H and screw dislocation in GaN

Naoki Inoue1, Kenta Chokawa2, Yosuke Harashima2, Atsushi Oshiyama2, and Kenji Shiraishi2

1 Graduate School of Engineering, Nagoya University

2 Institute of Materials and Systems for Sustainable, Nagoya University

[Poster 3] Development of High-Dimensional Neural Network Potentials for InN/AlN heterostructures

Ying Dou1, Koji Shimizu2, Hiroshi Fujioka1, and Satoshi Watanabe2

1Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan

2Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan

[Poster 4] Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth

Soma Sakakibara1, Kenta Chokawa2, Masaaki Araidai1, 2, Akira Kusaba3, Yoshihiro Kangawa2, 3, Kenji Shiraishi1, 2

1 Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 305-0044, Japan

2 Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 305-0044, Japan

[Poster 5] Development of a large-scale DFT code CONQUEST and its applications on GaN systems

Tsuyoshi Miyazaki1 and Masato Oda2

1 International Center for MAterials NAnoarchitectonics (MANA), National Institute for Materials Science (NIMS)

2 Faculty of Systems Engineering, Wakayama University

[Poster 6] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

Tomoya Kimura, Kenta Chokawa, Atsushi Oshiyama, Kenji Shiraishi

Nagoya University

[Poster 7] A systematic approach for the interfacial reaction of O2 molecule under wet oxidation condition at 4H-SiC/SiO2 interface

Tsunashi Shimizu1, Toru Akiyama1, Tomonori Ito1, Hiroyuki Kageshima2, Masashi Uematsu3, Kenji Shiraishi4

1 Department of Physics Engineering, Mie University,

2 Interdisciplinary Graduate School of Science and Engineering, Shimane University,

3 Faculty of Science and Technology, Keio University,

4 Institute of Materials and Systems for Sustainability, Nagoya University

[Poster 8] Incorporation of Nitrogen into Ga-Ga weak bond at step edges on GaN growth surfaces

Kieu My Bui, Kenji Shiraishi, and Atsushi Oshiyama

Nagoya University

[Poster 9] First Principles Studies of C Vacancy Incorporation from SiC(0001) Surface

Hibiki Nakashima1, Kenta Chokawa2, Yoshiaki Daigo3, Ichiro Mizushima3, Takashi Yoda3, and Kenji Shiraishi2

1 Graduated School of Engineering, Nagoya University,

2 Insitute of Materials and Systems for Sustainability,

3 NuFlare Technology

[Poster 10] Atomic and electronic structures at the (Al2O3)1-x(SiO2)x/GaN interfaces

Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama

Institute of Materials and Systems for Sustainability, Nagoya University,

Graduate School of Engineering, Nagoya University

[Poster 11] Direct observation of trimethylgallium generated by transmetalation between trimethylindium and Ga by high-resolution mass spectrometry

Donglin Wu1, Zheng Ye2, Shugo Nitta2, Markus Pristovsek2, Yoshio Honda2,3 and Hiroshi Amano2,4,5

1 Graduate School of Engineering, Nagoya University, Japan

2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan

3 Institute for Advanced Research, Nagoya University, Japan

4 Venture Business Laboratory, Nagoya University, Japan

5 Akasaki Research Center, Nagoya University, Japan