Program
January 19~21, 2021 (JST)
Plenary talk: 60min ORAL presentation including discussion
Keynote talk: 45min ORAL presentation including discussion
Invited talk: 30min ORAL presentation including discussion
Contributed poster presentation: 90min POSTER presentation
Plenary talk
Structures, electron states and reactions on growing surfaces and at device interfaces of SiC and GaN
Kieu My Bui 1, Yu-ichiro Matsushita 2, Kenta Chokawa 1, Mauro Boero 1,3, Yoshihiro Kangawa1,4, Kenji Shiraishi 1, and Atsushi Oshiyama 1
1 Nagoya University
2 Tokyo Institute of Technology
3 University of Strasbourg
4 Kyushu University
Keynote talks
[Keynote 1] First principles molecular dynamics as a tool to explore complex chemical reactions in GaN
Mauro Boero1, 2, Kieu My Bui2, Atsushi Oshiyama2, Yoshihiro Kangawa2, 3, Kenji Shiraishi2, 4
1. University of Strasbourg, Institut de Physique et Chimie des Matériaux de Strasbourg, CNRS, UMR 7504, 67034, Strasbourg, France
2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan
4. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
[Keynote 2] AlN growth by physical vapor transport method - Ab initio total picture
Pawel Strak1, Konrad Sakowski1,2, Jacek Piechota1, Yoshihiro Kangawa3, and Stanislaw Krukowski1*
1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
2Institute of Applied Mathematics and Mechanics, University of Warsaw, 02-097 Warsaw, Poland
3Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan
[Keynote 3] Ab initio atomistic thermodynamics of pseudo-hot surfaces in the context of GaN growth and doping
Pawel Kempisty1, 2, Stanislaw Krukowski1, and Yoshihiro Kangawa2, 3
1. Institute of High Pressure Physics (UNIPRESS), Polish Academy of Sciences, Warsaw, Poland
2. Research Institute of Applied Mechanics (RIAM), Kyushu University, Fukuoka, Japan
3. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Japan
[Keynote 4] Local donor states at screw dislocation and Mg complexes in p-type GaN
Yosuke Harashima
Institute of Materials and Systems for Sustainability, Nagoya University
[Keynote 5] Microscopic Mechanism of Defect Reactions in GaN
Masato Oda1 and Tsuyoshi Miyazaki2
1. Wakayama University
2. NIMS
[Keynote 6] Ab-initio studies on SiC/SiO2: identification of interface states and a theoretical approach to reduce the interface-state density
Yu-ichiro Matsushita
Tokyo Institute of Technology
[Keynote 7] Nitride and Oxide superlattices - theory and experiment
Iza Gorczyca1, Tadek Suski1, Grzegorz Staszczak1, Henryk Teisseyre1, 2
1. Institute of High Pressure Physics, "Unipress", Polish Academy of Sciences, Warsaw, Poland
2. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
[Keynote 8] Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices
Nobuya Mori, Hajime Tanaka, Tomoki Hoshino, and Gennady Mil'nikov
Osaka University
[Keynote 9] More quantitative prediction of III-nitride growth: theoretical and data-driven approaches
Akira Kusaba1 and Yoshihiro Kangawa1,2
1 RIAM, Kyushu University
2 IMaSS, Nagoya University
[Keynote 10] Recent progress in computational materials science for III-nitride epitaxial growth: effects of growth kinetics on surface morphologies and nanostructures
Toru Akiyama, Yuki Seta, Takumi Ohka, Tomonori Ito
Department of Physics Engineering, Mie University, Mie, Japan
[Keynote 11]
Thermodynamic and experimental study of β-Ga2O3 growth by halide vapor phase epitaxy for fabrication of epitaxial wafers for power device applications
Thermodynamic and experimental study of β-Ga2O3 growth by halide vapor phase epitaxy for fabrication of epitaxial wafers for power device applications
Yoshinao Kumagai1,2, Ken Goto1, Hisashi Murakami1,2, Akito Kuramata3, Shigenobu Yamakoshi4, and Masataka Higashiwaki5
1Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
2Institute of Global Innovation Research, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
3Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan
4Tamura Corporation, Sayama, Saitama 350-1328, Japan
5National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
Invited talks
[Invite 1] Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion
Takahiro Kawamura1, Akito Korei1, Kouhei Basaki1, Toru Akiyama1, Yoshihiro Kangawa2, Izabela Gorczyca3, Tadeusz Suski3, Małgorzata Wierzbowska3, and Stanisław Krukowski3
1Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
2Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan
3Institute of High Pressure Physics, UNIPRESS, 01-142 Warsaw, Poland
[Invite 2] On numerical simulations of polarization-doped AlGaN UV laser diodes
Konrad Sakowski (1,2), Kosuke Sato (3,4), Kazuki Yamada (4), Pawel Kempisty (2,5), Motoaki Iwaya (4), Pawel Strak (2), Yoshihiro Kangawa (5), Stanislaw Krukowski (2)
1 Institute of Applied Mathematics and Mechanics, University of Warsaw, Banacha 2, 02-097 Warsaw, Poland
2 Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
3 Advanced Devices Technology Center, Asahi-Kasei Corporation, Fuji, Shizuoka 416-8501, Japan
4 Faculty of Science and Technology, Meijo University, Nagoya, Aichi 468-8502, Japan
5 Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
[Invite 3: Program chair's pick] The Decomposition of Trimethylgallium in Different Carrier Gases for MOVPE Studied by High-Resolution Time-of-Flight Mass Spectrometry
Zheng Ye1, Shugo Nitta1, Markus Pristovsek1, Yoshio Honda1, 2 and Hiroshi Amano1, 3, 4
1 Institute of Materials and Systems for Sustainability, Nagoya University, Japan
2 Institute for Advanced Research, Nagoya University, Japan
3 Venture Business Laboratory, Nagoya University, Japan
4 Akasaki Research Center, Nagoya University, Japan
[Invite 4: Program chair's pick] Study of thermal transport properties of GaN using high-dimensional neural network potentials
Satoshi Watanabe1 Koji Shimizu1 and Emi Minamitani2
1 Dept. Materials Eng., UTokyo
2 Inst. Molecular Sci.
Contributed Presentations
[Oral 1] Numerical analysis of dynamic punch-through phenomenon in vertical GaN MOSFET structure with considering the Poole-Frenkel effect
Shohei Rokuno1, and Jun Suda1, 2
1 Nagoya University
2 IMaSS, Nagoya University
[Oral 2] Ab initio-based approach to GaN HVPE and THVPE processes: p-type doping and facet stability
Daichi Yosho1, Yuriko Matsuo2, Pawel Kempisty2, Akira Kusaba2, Yoshihiro Kangawa1, 2
1Dept. Aeronautics and Astronautics, Kyushu University
2Research Institute for Applied Mechanics, Kyushu University
[Poster 1] Step morphology on SiC surfaces by real-space density-functional calculations
Kaori Seino and Atsushi Oshiyama
Institute of Materials and Systems for Sustainability, Nagoya University
[Poster 2] First-principles calculations on the complex of Mg, H and screw dislocation in GaN
Naoki Inoue1, Kenta Chokawa2, Yosuke Harashima2, Atsushi Oshiyama2, and Kenji Shiraishi2
1 Graduate School of Engineering, Nagoya University
2 Institute of Materials and Systems for Sustainable, Nagoya University
[Poster 3] Development of High-Dimensional Neural Network Potentials for InN/AlN heterostructures
Ying Dou1, Koji Shimizu2, Hiroshi Fujioka1, and Satoshi Watanabe2
1Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan
2Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
[Poster 4] Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth
Soma Sakakibara1, Kenta Chokawa2, Masaaki Araidai1, 2, Akira Kusaba3, Yoshihiro Kangawa2, 3, Kenji Shiraishi1, 2
1 Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 305-0044, Japan
2 Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 305-0044, Japan
[Poster 5] Development of a large-scale DFT code CONQUEST and its applications on GaN systems
Tsuyoshi Miyazaki1 and Masato Oda2
1 International Center for MAterials NAnoarchitectonics (MANA), National Institute for Materials Science (NIMS)
2 Faculty of Systems Engineering, Wakayama University
[Poster 6] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl
Tomoya Kimura, Kenta Chokawa, Atsushi Oshiyama, Kenji Shiraishi
Nagoya University
[Poster 7] A systematic approach for the interfacial reaction of O2 molecule under wet oxidation condition at 4H-SiC/SiO2 interface
Tsunashi Shimizu1, Toru Akiyama1, Tomonori Ito1, Hiroyuki Kageshima2, Masashi Uematsu3, Kenji Shiraishi4
1 Department of Physics Engineering, Mie University,
2 Interdisciplinary Graduate School of Science and Engineering, Shimane University,
3 Faculty of Science and Technology, Keio University,
4 Institute of Materials and Systems for Sustainability, Nagoya University
[Poster 8] Incorporation of Nitrogen into Ga-Ga weak bond at step edges on GaN growth surfaces
Kieu My Bui, Kenji Shiraishi, and Atsushi Oshiyama
Nagoya University
[Poster 9] First Principles Studies of C Vacancy Incorporation from SiC(0001) Surface
Hibiki Nakashima1, Kenta Chokawa2, Yoshiaki Daigo3, Ichiro Mizushima3, Takashi Yoda3, and Kenji Shiraishi2
1 Graduated School of Engineering, Nagoya University,
2 Insitute of Materials and Systems for Sustainability,
3 NuFlare Technology
[Poster 10] Atomic and electronic structures at the (Al2O3)1-x(SiO2)x/GaN interfaces
Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama
Institute of Materials and Systems for Sustainability, Nagoya University,
Graduate School of Engineering, Nagoya University
[Poster 11] Direct observation of trimethylgallium generated by transmetalation between trimethylindium and Ga by high-resolution mass spectrometry
Donglin Wu1, Zheng Ye2, Shugo Nitta2, Markus Pristovsek2, Yoshio Honda2,3 and Hiroshi Amano2,4,5
1 Graduate School of Engineering, Nagoya University, Japan
2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan
3 Institute for Advanced Research, Nagoya University, Japan
4 Venture Business Laboratory, Nagoya University, Japan
5 Akasaki Research Center, Nagoya University, Japan
