The International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021) will be held online from January 19 to 21, 2021 (JST). The Symposium will present high-impact scientific and technological advances in growth, process and device simulations based on wide bandgap semiconductors: III-nitrides, SiC, oxides, diamond and so on.

Outstanding Poster Award

• Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama,
  Atomic and electronic structures at the (Al2O3)1-x(SiO2)x/GaN interfaces

• Soma Sakakibara, Kenta Chokawa, Masaaki Araidai, Akira Kusaba, Yoshihiro Kangawa, Kenji Shiraishi,
  Theoretical study of the effects of H2 and NH3 on the TMG decomposition process in GaN crystal growth

Sponsors

Sponsor

• Nanocrystalline Materials and Epitaxial Growth Division, the Japanese Association for Crystal Growth (JACG)

Co-Sponsors

• Center for Integrated Research of Future Electronics, Nagoya University

• GaN Consortium

• MEXT Program for Promoting Research on the Supercomputer Fugaku: Quantum-Theory-Based Multiscale Simulations toward the Development of Next-Generation Energy-Saving Semiconductor Devices (FY2020 - FY2022)