Dr Nobuya MORI
Professor, Graduate School of Engineering, Osaka University
Honorary Professor, School of Physics & Astronomy, The University of Nottingham
Graduate School of Engineering, Osaka University
2-1 Yamada-oka, Suita City, Osaka 565-0871, Japan
Email: mori(at)physics(dot)org
Phone/Fax: (+81) (0) 6 6879 7791
Mori Lab Web: http://www.si.eei.eng.osaka-u.ac.jp/index-e.html
Google Scholar: https://scholar.google.co.jp/citations?user=GTd_WEIAAAAJ&hl=ja&oi=ao
Instagram: https://www.instagram.com/nobuyamori/
Facebook: https://www.facebook.com/nobuya.mori.3
Steering chair, 2023, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Conference chair, 2019 International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)
Steering chair, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Conference chair, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Program chair, 2013 International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON)
Conference chair, 2013 International Workshop on Computational Electronics (IWCE)
Program committee member, SSDM 2008-2017, ISANN 2015, SISPAD 2008, 2009, 2012, IWCE 2012, IWCN 2021, EDISON 2007
International steering committee member, SISPAD 2013, 2014, 2015
International advisory committee member, IWCN (IWCE), EDISON
Editorial board member, Journal of Computational Electronics
Editorial board member, Semiconductor Science and Technology
EPSRC peer review associate college member
Recent and Upcoming Invited Talks and Tutorials
"Modeling and Simulation of Quantum Transport Properties of Semiconductor Nanosheets," 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC).
"Semiconductor device simulation from first principles," The 24th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-24)
"Impacts of band structures and scattering processes on high-field carrier transport in wide bandgap semiconductors," International Workshop on Computational Nanotechnology 2023 (IWCN 2023)
"Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices," The International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021).
"RSDFT-NEGF quantum transport simulation of ultra-small field-effect transistors," The 4th IEEE Electron Devices Technology and Manufacturing (EDTM)
”Quantum transport device simulation based on real-space density functional theory and non-equilibrium Green's function method," International Union of Materials Research Societies – International Conference on Electronic Materials 2018 (IUMRS-ICEM 2018)
"Recent progress in NEGF simulation of electron and phonon transport in nano-devices," Short Course, 2016 International Conference on Solid State Devices and Materials
"R-matrix theory and real space DFT simulation of Si nanowire transistors," The 18th International Symposium on the Physics of Semiconductors and Applications
"NEGF simulation of nanowire transistors," 2015 Osaka University-NCTU Joint Workshop on Modeling and Simulation of Semiconductor Devices
"Scattering basis representation in quantum transport simulation of nanowire transistors," The 9th International Conference on Computational Physics
"Quantum transport simulation of statistical variability in nano-scale MOSFETs,"The 6th IEEE international Nanoelectronics Conference 2014
"R-matrix theory and equivalent model for nanoscale device simulation," 2014 International Workshop on Computational Electronics
"Nano-device simulation from an atomistic view," 2013 IEEE International Electron Devices Meeting
"Non-equilibrium Green's function simulation on effects of atomic disorder and random dopant in Si nanowire transistors," 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
"Device simulation for nanoscale transistors," 2013 Gate Stack Technology Meeting