INESC Microsistemas e Nanotecnologias  operates a 250 m2 cleanroom (class 100 and class 10 areas) and adjoining 250 m2 grey area (nominally class 10,000) for magnetic recording head and MR sensor fabrication, thin film semiconductor device, biosensor and lab-on-chip/organ-on-chip fabrication including microfluidics, and MEMS processing.

Deposition of thin films of Al98.5Si1.0Cu0.5 alloy and TiW(N) using magnetron sputtering on 150 mm wafers. Hot process (400 ºC) suitable to fill 1 micron contact \ via holes. Thickness Uniformity of ± 1.5 % over 6” wafers. Soft sputter etching module to clean contacts before metallization. Degassing module (up to 450 ºC). By reactive sputtering, films of AlN are fabricated with thickness up to 5mm. Holders for round wafers ( 3”, 4”, 6”), and glass substrates (25 x 25 mm, 25 x 75 mm, 50 x 50 mm, etc.). Gases: Ar, N2, O2. Base pressure on process modules, 5x10^-9 Torr. Base pressure on dealer, 5x10^-8 Torr.

This system is presently used for the deposition of sputtered SiO2 from a silica target. The maximum size of substrate is 75 mm diameter. It is also suitable for metal films deposition, depending on the target composition. Also used for tunnel barrier fabrication. Base pressure 1x10^-7 Torr.

Reactive ion etching (RIE) of dielectrics (SiO2 and SiNx) and semiconductors (a-Si:H, mc-Si:H, a-C:H) using fluorine based gases. System is designed for 6" (150 mm) diameter silicon wafers. Different substrate materials and smaller substrate sizes may be possible upon request. (UPGRADE financed by FCT within the National Re-Equipment Program)

Thermal oxidation of 6" (150 mm) Si wafers, TEOS, forming gas annealing, thermal annealing in inert ambient.

Oxford Plasma Pro 100 PECVD 

Deposition of a-Si:H, SiO2, SiNx, a-Si,C:H thin films; compatible with 200 mm wafer size

Direct write lithography system from Heidelberg Instruments, utilizing a HeCd laser (l=442 nm (g-line) / write lens NA= 0.85) capable of critical dimensions down to 0.8 um. System works with mask designs in GDS2 format. (UPGRADE financed by FCT within the National Re-Equipment Program)

Electron beam lithography system that allows the definition of structures down to 10 nm dimensions. (Equipment financed by FCT within the National Re-Equipment Program)

This equipment allows photolithography on 200 mm wafers with a 150 mm exposure area.

Track system for spin coating of photoresist (for both optical and e-beam lithography) and for development of post-exposed wafers. (UPGRADE financed by FCT within the National Re-Equipment Program)

Vapor priming of silicon wafers to promote adhesion of photoresist or surface modification. The process is usually performed at 130 ºC in an environment of hexamethyldisilazane (HMDS) vapor.

Dicing saw for ceramic, silicon and glass substrates. Automated cutting sequences. Used for chip fabrication, recording head rowbar dicing and slotting, cover bar fabrication. 

This system uses reactive ion etching to etch dielectrics and metals using fluorine and chlorine chemistry. It is design to process up to 200 mm diameter wafers. The samples processed on the equipment have an uniformity of +/- 2.5 %. The system has 8 gases available: Ar, CF4, SF6, HBr, Cl2, BCl3, O2 and H2 

The S-2500 is a standard low voltage (3-30 kV) scanning electron microscope with a tungsten hairpin type filament. Magnification : 20 -100 000 X; resolution: 3.5 nm; maximum beam current: 300 mA

This equipment can measure and map profiles over 200 mm wafers allowing for characterization of surface structures and roughness.

An optical instrument that measure changes in the state of polarized light reflected from the surfaces of samples, permitting the determination of the optical constants of bare surfaces, and the refractive indices and thickness of thin films on those surfaces. Interference filters allow the measurement to be made at 3 wavelengths: 405, 633 and 830 nm. This equipment is especially optimized for measuring thin dielectric films such as SiO2and SiNx on silicon with thickness from a few 100´s of Angstroms to a few microns.

SE-2000 features the widest spectral range available on a single tool. The ranging is from the deep UV (190 nm) up to mid-IR (25 μm). The tool is uniquely offered with an optional FTIR ellipsometer head on the same goniometer with the visible arms. It can be configured with the fast detection mode by using spectrograph and detector array, with the high resolution mode by using spectrometer and single point detectors, or with both modes together on the same tool. SE-2000 includes Semilab’s new smart electronics with interchangeable components, and operates with the new generation operating and analysis software (SAM / SEA). The system can be controlled from a PC or laptop through LAN network, or by a new touch panel interface.

The Olympus BH3-MJL microscope is a reflected light IC inspection microscope with 1000 X maximum magnification. The microscope installed at INESC MN has magnifications of 100 X, 500 X and 1000 X, as well as darkfield and Nomarsky DIC (Differential Interference Contrast) observation capabilities .

The Nikon LV-N microscope has CFI60 infinity corrected brightfield objectives with magnifications of 100 X, 50 X and 10 X