Facilities

INESC Microsistemas e Nanotecnologias operates a 250 m2 cleanroom (class 100 and class 10 areas) and adjoining 250 m2 grey area (nominally class 10,000) for magnetic recording head and MR sensor fabrication, thin film semiconductor device, biosensor and lab-on-chip/organ-on-chip fabrication including microfluidics, and MEMS processing.

  • Nordiko 7000 - magnetron sputtering - 6" wafer, 4 modules (deposition TiW(N), deposition Al98.5Si1.0Cu0.5, etching)

Deposition of thin films of Al98.5Si1.0Cu0.5 alloy and TiW(N) using magnetron sputtering on 150 mm wafers. Hot process (400 ºC) suitable to fill 1 micron contact \ via holes. Thickness Uniformity of ± 1.5 % over 6” wafers. Soft sputter etching module to clean contacts before metallization. Degassing module (up to 450 ºC). By reactive sputtering, films of AlN are fabricated with thickness up to 5mm. Holders for round wafers ( 3”, 4”, 6”), and glass substrates (25 x 25 mm, 25 x 75 mm, 50 x 50 mm, etc.). Gases: Ar, N2, O2. Base pressure on process modules, 5x10^-9 Torr. Base pressure on dealer, 5x10^-8 Torr.

  • Nordiko 3600 - multi-target broad ion beam deposition system and milling - 8" wafer, 6 targets (e.g. Ta, Ru, MnIr, MnPt, NiFe, CoFe, CoFeB, MgO, AlOx, Al, NiFeCr)

    Ion beam deposition of metals and dielectrics on up to 8 inch (200 mm) wafers. The system has 6 targets to deposit multilayer structures with precise and automatic control of film thickness. Typical structures are spin valves and tunnel junctions, read gap oxides, passivation layers. Base pressure 5x10^-8 Torr.

  • Nordiko 3000 - multi-target dual source ion beam deposition system and milling - 6" wafer, 6 targets (e.g. Ta, Ru, MnIr, MnPt, NiFe, CoFe, CoFeB, Pt, MgO, AlOx, Al, Au, Ti)

    Ion beam deposition of metals and dielectrics (typical structures are spin valves and tunnel junctions, read gap oxides, passivation layers with the following targets: Ni80Fe20, Mn80Ir20, Co90Fe10, Ta, Cu, Al, Ru, NiFeCr, Cr, Ti, Fe, Co, CoFeB, CoZrNb, MnCrPt, Al2O3, Zr). Also used for the fabrication of metal oxides by reactive deposition (NiO, CrOx, TiOx, Fe3O4). Fabrication of thin tunnel barriers (AlOx, AlN) by oxygen plasma, and natural oxidation. 6 targets on a carousel. Uniformity over 6” wafers typically ± 1.5 % (Max-Min/Max+Min). Deposition of Cr/Au for biological applications. Ion mill system to define structures through a photoresist or hard mask. Can use reactive gases to enhance etching rates. Gases: Ar, O2, N2, Xe. Base pressure 5x10^-8 Torr.

  • Nordiko 2000 - multi-target magnetron and RF sputtering - 4" wafer, 6 targets (e.g. Ta, Ir, Pt, Pd, Co, Dy)

    Deposition of thin films using magnetron sputtering on 3” or 4” wafers. Typical use, spin valve, tunnel junction, GMR multilayer fabrication. The system has 6 different targets in the same chamber, with the possibility to deposit multilayer structures with precise and automatic control of film thickness. Available targets: Ni80Fe20, Co80Fe20, Mn80Ir20, Ta, Cu, Al, Zr, Hf, Ru, Re, Cr, Mn, CoPt, and others. Sputter etch available. Base pressure, 5x10^-8Torr.

  • Alcatel - magnetron sputtering system - 4" wafer, 3 targets (e.g. SiO2, Cr, Al, ITO, IZO, AZO, GeSbTe, Si, Ti, Ni)

This system is presently used for the deposition of sputtered SiO2 from a silica target. The maximum size of substrate is 75 mm diameter. It is also suitable for metal films deposition, depending on the target composition. Also used for tunnel barrier fabrication. Base pressure 1x10^-7 Torr.

  • Aixtron NanoInstruments Black Magic: 2" Plasma Enhanced Chemical Vapour Deposition for graphene monolayer and multi-monolayer and carbon nanotubes growth

The Aixtron Black Magic CVD furnace is dedicated to graphene synthesis and can accommodate multiple pieces or a single 2" wafer, with methane and hydrogen available as process gases. Process recipes have been optimized and are available to the user for the following: Cu foil (available at INESC MN or provided by the user) and Cu-coated substrates. The recipes on Cu have been characterized to give excellent monolayer coverage with minimal areas of bilayers and low defectivity.

  • Electrotech Delta - chemical vapor deposition - 6" wafer (SiO2, SiNx)

Deposition of thin films of silicon dioxide and silicon nitride for electrical insulation and passivation. Chemical vapor deposition using silane and nitrous oxide for SiO2 and silane, ammonia and nitrogen for SiNx. Film uniformity better than 6 % over a 150 mm diameter wafer can be achieved. Typical film thickness from 1000 Å to 1 micron ( with the possibility of depositing up to 4 mm of SiO2 on bare silicon). Substrates other than silicon are also possible upon request.

  • LAM Research Rainbow Plasma Etcher - reactive ion etching - 6" wafer

Reactive ion etching (RIE) of dielectrics (SiO2 and SiNx) and semiconductors (a-Si:H, mc-Si:H, a-C:H) using fluorine based gases. System is designed for 6" (150 mm) diameter silicon wafers. Different substrate materials and smaller substrate sizes may be possible upon request. (UPGRADE financed by FCT within the National Re-Equipment Program)

  • Diffusion/Passivation furnaces

Thermal oxidation of 6" (150 mm) Si wafers, TEOS, forming gas annealing, thermal annealing in inert ambient.

  • UHVII - single-target Ultra-High Vacuum RF sputtering - 6" wafer, 1 target (Al2O3)

It consists in a RF sputtering deposition system used to deposit Al2O3 which operates at a base pressure of ∼ 10^−7 Torr. On the top part of the chamber, a 4 inch diameter magnetron is present near the 6 inch amorphous Al2O3 target, allowing for a confined and uniform deposition in the substrate table placed underneath.


  • Nordiko 8800 - multi-target ion beam deposition and milling - 8" wafer, 8 targets (e.g. CoFe, CoFeB, NiFe, MgO, MnPt, FeB, Cr, Co, Ru)

  • UHVI - single-target magnetron sputtering - 6" wafer, 1 target (mosaic CoZrNb)

  • GeSiM Nano-Plotter NP2.1

  • Plasma enhanced chemical vapor deposition systems (2)


  • Class 10 lithography area

  • Class 100 cleanroom area

  • Heidelberg Instruments DWLii direct write laser lithography system

Direct write lithography system from Heidelberg Instruments, utilizing a HeCd laser (l=442 nm (g-line) / write lens NA= 0.85) capable of critical dimensions down to 0.8 um. System works with mask designs in GDS2 format. (UPGRADE financed by FCT within the National Re-Equipment Program)

  • RAITH 150 electron beam lithography system

Electron beam lithography system that allows the definition of structures down to 10 nm dimensions. (Equipment financed by FCT within the National Re-Equipment Program)

  • SVG 88 (Silicon Valley Group) - resist coater and developer track - 6" wafer

Track system for spin coating of photoresist (for both optical and e-beam lithography) and for development of post-exposed wafers. (UPGRADE financed by FCT within the National Re-Equipment Program)

  • HMDS vapor prime oven

Vapor priming of silicon wafers to promote adhesion of photoresist or surface modification. The process is usually performed at 130 ºC in an ambient of hexamethyldisilazane (HMDS) vapor.

  • Dicing saw Disco DAD 321 automatic dicing saw, up to 6” wafer

Dicing saw for ceramic, silicon and glass substrates. Automated cutting sequences. Used for chip fabrication, recording head rowbar dicing and slotting, cover bar fabrication.

  • Processing of soft lithographic techniques (SU-8, AZ, PDMS) for microfluidics

  • Vibrating Sample magnetometer DMS 880

    • Optoelectronic characterizations

    • Optical detection of electromechanical deflection (in air and vacuum)

  • Magnetoresistance measurement setups

    • 150 Oe

    • 2KOe

    • Auto prober set up for 6inch wafer

  • X-ray diffractometer Siemens D5000

  • Fluorescence microscopes

    • Leica DMLM fluorescence microscope

    • Olympus CKX41 fluorescence microscope

  • Hitachi Scanning Electron microscope

The S-2500 is a standard low voltage (3-30 kV) scanning electron microscope with a tungsten hairpin type filament. Magnification : 20 -100 000 X; resolution: 3.5 nm; maximum beam current: 300 mA

  • Profilometer Dektak 3030ST

The 3030ST is an advanced surface texture measuring system which measures surface texture below 10's of nm and film thickness up to 131 microns with a 10 to 20 Angstroms resolution. Measurements are made electromechanically by moving the sample beneath a 12.5 micron diameter stylus. It has also 22 analytical functions for analysis of roughness, waviness and geometric measurements.

  • Profilometer Tencor Alpha-step 200

The Alpha-step 200 profilometer is used to measure surface profiles with features down to 10's of Å in height. It can be used to measure the average surface roughness of both deposited films and in several substrate materials like, silicon, ceramics and metals. Deposited films can be soft materials for which the stylus force can be adjusted. It has a maximum measurement range of 160 mm for the vertical scale and 10,000 mm for the horizontal scale, and a resolution of 5 Å and 400 Å for vertical and horizontal scales, respectively.

  • Ellipsometer Rudolf Auto EL IV-NIR-3

An optical instrument that measure changes in the state of polarized light reflected from the surfaces of samples, permitting the determination of the optical constants of bare surfaces, and the refractive indices and thickness of thin films on those surfaces. Interference filters allow the measurement to be made at 3 wavelengths: 405, 633 and 830 nm. This equipment is especially optimized for measuring thin dielectric films such as SiO2and SiNx on silicon with thickness from a few 100´s of Angstroms to a few microns.

  • Industrial Microscope Olympus BH3-MJL

The Olympus BH3-MJL microscope is a reflected light IC inspection microscope with 1000 X maximum magnification. The microscope installed at INESC MN has magnifications of 100 X, 500 X and 1000 X, as well as darkfield and Nomarsky DIC (Differential Interference Contrast) observation capabilities .

  • Industrial Microscope Nikon Eclipse LV-N metrology

The Nikon LV-N microscope has CFI60 infinity corrected brightfield objectives with magnifications of 100 X, 50 X and 10 X