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Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
Dou, H.; Gao, X.; Zhang, D.; Dhole, S.; Qi, Z.; Yang, B.; Hasan, M. N.; Seo, J.-H.; Jia, Q.; Hellenbrand, M.; MacManus-Driscoll, J. L.; Zhang, X.; Wang, H. Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response. ACS Appl. Electron. Mater. 2021, 3 (12), 5278–5286. https://doi.org/10.1021/acsaelm.1c00791.
Highlights:
Resistive switching tuned by molar ratio of HfO2 and CeO2
Anisotropic dielectric response correlated with density of vertical phase boundaries
Forming-free switching system optimized with 1:1 composition of HfO2:CeO2
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