Extreme Lithography & Materials Innovation Center

Wilfried Haensch

Wilfried Haensch received his Ph.D. in 1981 from the Technical University of Berlin, Germany, in the field of theoretical solid-state physics. He started his career in silicon technology in 1984 at SIEMENS Corporate Research, Munich. There, he worked on high-field transport in MOSFETs and later in DRAM development and manufacturing. In 2001, he joined the IBM T.J. Watson Research Center to lead a group for novel devices and applications. He was responsible for the exploration of device concepts for future technology nodes and new concepts for memory and logic circuits, including 3D integration, early FinFET work, and the exploration of Carbon Nanotubes for VLSI circuits. He was also active in CMOS-integrated Silicon Photonics, providing high-bandwidth, low-cost links for future computing systems. Prior to his retirement from IBM in 2018, he was responsible for novel technologies for neuromorphic computation with emphasis on exploring memristive elements (such as PCM, RRAM, and FeRAM) in neural network arrays. Currently, he is a consultant with Argonne National Laboratory in support of their microelectronic activities and has an affiliation with the University of Chicago.  He is the author of a textbook on transport physics and author/co-author of more than 150 publications. He was awarded the Otto Hahn Medal for outstanding Research in 1983. He was named an IEEE Fellow in 2012.

Projects: UDM