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Current and Previous works on the development of emerging memories such as Resistance Random Access Memories (RRAM) and Ferroelectric Memory (FeRAM).
- PCMO based RRAM
Key Publications:
J Sakhuja et. al, "Integration of Non-Filamentary Pr0.7Ca0.3MnO3 – based Memristor with Silicon-PN Junction", IEEE Electron Device Letters, 2023 link
J Sakhuja et.al, "Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM", IEEE Transactions on Electron Devices 67 (12), 5520-5525, 2020 link
- PCMO RRAM Crossbar Array
Key Publications:
N. solanki et. al, "Fundamental Limitations on Neural Network Density due to Memristor Variability with Temperature", 2025 Device Research Conference (DRC), USA
J. Sakhuja et. al, "Device-Aware Quantization in Resistive Random Access Memory-Based Crossbar Arrays to Account for Device Non-Idealities ", 2024 Device Research Conference (DRC)
- Bi-directional NPN Selector for RRAM
Key Publications:
S. Lashkare et.al, ” A Bipolar RRAM Selector with Designable Polarity Dependent On-Voltage Asymmetry” International Memory Workshop (IMW), 2013
H. Kumar et.al, "On-Voltage Designability by Triangular Barrier Engineering in Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM", IEEE EDTM 2024
VSS Srinivasan et.al, "Punchthrough-diode-based bipolar RRAM selector by Si epitaxy", IEEE Electron Device Letters 33 (10), 1396-1398 , 2012 link
S Deshmukh et. al, "I-NPN: A sub-60mV/decade, sub-0.6 V selection diode for STTRAM", 71st Device Research Conference, 113-114, 2013
- 3-terminal PCMO RRAM
Key Publications:
S Lashkare et. al, "Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM", ACS Applied Electronic Materials 2 (7), 2026-2031, 2020 link
S. Lashkare et.al, “METHOD FOR HANDLING LOGICAL OPERATION IN MEMORY DEVICE ” (Granted Indian Patent Number:496652 )`
- HfO2 based Ferroelectric Memory
Key Publications:
S Rowtu et.al, "Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr> 70 μC/cm2) in Hf0. 5Zr0. 5O2 Thin Films", IEEE Transactions on Electron Devices 70 (7), 3536-3541, 2023 link
Hanif Ali et.al, “Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon” IEEE Transactions on Electron Devices, 2023 link
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