Publications & Patents

Journal Publications

1. S. Shubham, N. Myanapuri, S. Mohanty, S. Lashkare, "Fault Tolerance of Oscillatory Neural Network: Device Oscillator based Small Network to Digital Oscillator based Large Networks " IEEE Journal of the Electron Devices Society 2025 Link

2. H. Singh, N. Solanki, J. Singh Maskeen, S. Lashkare, "Asynchronous Real-Time Learning in Spiking Neural Network using 3-Terminal Resistance Random Access Memory", TechRxiv. May 01, 2025. Link

3. J. Sakhuja, U. Ganguly and S. Lashkare, "Low Voltage NIPIN Symmetric and Bi-directional Diode for System Level ESD Protection", IEEE Electron Device Letters 2024 link

4. J. Sonawane, S. Patil, A. Kadam, A. K. Singh, S. Lashkare, V. Deshpande, U. Ganguly, "Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons" IEEE Transactions on Electron Devices 2024 link

5. S. Patil*, A. Kadam*, J. Sonawane , S. Deshmukh , Gaurav R , A K Singh , S. Lashkare , V. Deshpande , L. Somappa and U. Ganguly, "Area and Energy Efficient Quantum Tunneling based Thermal Sensor on 45nm RFSOI Technology " IEEE Transactions on Electron Devices 2024 link

6. N. Saurabh, S. Patil, P. Meihar, S. Kumar, A. Sharma, B. K. Kamaliya, R. G. Mote, S. Lashkare, A. Laha, V. Deshpande, U. Ganguly "Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application" Thin Solid Films 2024 link

7. S. Patil, A. Kadam, R. Saikia, J. Sonawane, K. Thakor, A. Singh, Gaurav R, N. Mohapatra, S. Lashkare, V. Deshpande, U. Ganguly "Reliability of Tunneling Regime for Silicon on Insulator-based Neuron", IEEE Transactions on Electron Devices 2024 link

8. J. Sakhuja*, K. Kaushik*, V. Saraswat, S. Lashkare, U. Ganguly, "Relevance of Hidden Transients in the Steady State Memristor Measurements", IEEE Electron Device Letters 2024 link

9. S. Patil; A. Pandey; S. Bhunia; S. Lashkare; A. Laha; V. Deshpande; U. Ganguly, "Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2O3/Si(111) Substrate using Radio Frequency Sputtering for Silicon-on-Insulator Application" Thin Solid Films 2024 link

10. P. Meihar, S. Rowtu, S. Lashkare, A. Singh, H. Mulaosmanovic, V. Deshpande, S. Dunkel, S. Beyer, U. Ganguly, "Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications", IEEE Transactions on Electron Devices 2024 link

11. S. Patil, S. Kumar, A. H Pandey, S. Bhunia, B. Kamaliya, A. Sharma, S. Lashkare, R. G. Mote, A. Laha, V. Deshpande, U. Ganguly, "Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application" Thin Solid Films, 2024 link

12. P. Meihar, S. Rowtu, V. Saraswat, S. Lashkare, H. Mulaosmanovic, A. Singh, S. Dünkel, S. Beyer, and U. Ganguly, "FeFET-based MirrorBit cell for High-density NVM storage" IEEE Transactions on Electron Devices 2024 link

Pre-IITGN

1. Hanif Ali, Adityanarayan Pandey, Rowtu Srinu, Paritosh Meihar, Shubham Patil, Sandip Lashkare, Veeresh Deshpande, Udayan Ganguly, “Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon” IEEE Transactions on Electron Devices, 2023 link

2. Shubham Patil, Anand Sharma, Gaurav R, Abhishek Kadam, Ajay Kumar Singh, Sandip Lashkare, Nihar Ranjan Mohapatra, and Udayan Ganguly, “Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron” IEEE Transactions on Electron Devices 2023 link

3. S Rowtu, P Meihar, A Pandey, MH Ali, S Lashkare, U Ganguly, "Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr> 70 μC/cm2) in Hf0. 5Zr0. 5O2 Thin Films", IEEE Transactions on Electron Devices 70 (7), 3536-3541, 2023 link

4. S Lashkare, W Uddin, K Priyadarshi, U Ganguly, "Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories", Invited Article: Proceedings of the National Academy of Sciences, India Section A: Physical Sciences, 2023 link

5. J Sakhuja, S Rowtu, S Patil, S Lashkare, U Ganguly, "Integration of Non-Filamentary Pr0.7Ca0.3MnO3 – based Memristor with Silicon-PN Junction", IEEE Electron Device Letters, 2023 link

6. Shahid Malik, Kaushal Kishore, Laxmeesha Somappa, Sandip Lashkare, Tarikul Islam, SA Akbar, Maryam Shojaei Baghini, "A dual-slope-based capacitance-to-time signal conditioning circuit for leaky capacitive sensors", IEEE Transactions on Instrumentation and Measurement 70, 1-8, 2021 link

7.  J Sakhuja, S Lashkare, K Jana, U Ganguly, "Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM", IEEE Transactions on Electron Devices 67 (12), 5520-5525, 2020 link

8. Vivek Saraswat, Shankar Prasad, Abhishek Khanna, Ashwin Wagh, Ashwin Bhat, Neeraj Panwar, Sandip Lashkare, Udayan Ganguly, "Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM", IEEE Transactions on Electron Devices 67 (9), 3610-3617, 2020 link

9. S Lashkare, S Subramoney, U Ganguly, "Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing", IEEE Electron Device Letters 41 (9), 1344-1347, 2020 link

10. S Lashkare*, V Saraswat*, U Ganguly, "Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM", ACS Applied Electronic Materials 2 (7), 2026-2031, 2020 link

11. Devesh Khilwani*, Vineet Moghe*, Sandip Lashkare, Vivek Saraswat, Pankaj Kumbhare, Maryam Shojaei Baghini, Srivatsava Jandhyala, Sreenivas Subramoney, Udayan Ganguly , "PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem", APL Materials 7 (9), 2019 link

12. AV Babu, S Lashkare, U Ganguly, B Rajendran, "Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics" Neurocomputing 321, 227-236, 2018 link

13. S Lashkare, P Kumbhare, V Saraswat, U Ganguly, "Transient joule heating-based oscillator neuron for neuromorphic computing", IEEE Electron Device Letters 39 (9), 1437-1440 2018 link

14. S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly, "PCMO RRAM for integrate-and-fire neuron in spiking neural networks", IEEE Electron Device Letters 39 (4), 484-487, 2018 link

15. S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly, "PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP", IEEE Electron Device Letters 38 (9), 1212-1215, 2017 link

16. VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, Y Kim, S Srinivasan, S Kuppurao, S Lodha, Udayan Ganguly, "Punchthrough-diode-based bipolar RRAM selector by Si epitaxy", IEEE Electron Device Letters 33 (10), 1396-1398 , 2012 link

Conference Publications

2025

1. 1. Jaskirat Singh Maskeen, Sandip Lashkare, "A Unified Platform to Evaluate STDP Learning Rule and Synapse Model using Pattern Recognition in a Spiking Neural Network" ICANN Lithuania 2025 (Accepted)

   2. N. solanki, J. Sakhuja, MD Razi Paleth, U. Ganguly, S. Lashkare, "Fundamental Limitations on Neural Network Density due to Memristor  Variability with Temperature", 2025 Device Research Conference (DRC), USA (Accepted)

   3. N. Ahmad, S. Lashkare, L. Somappa, "On the ESD Protection for 10V-Compliant Neural Stimulator in 65nm CMOS Technology", 2025 IEEE International Symposium on Circuits and Systems,  London, UK  (Accepted)

   4. N. Shah, J. Sakhuja, U. Ganguly, S. Lashkare, L. Somappa, "A Hardware-Software Co-Design Platform to Evaluate SNN Workloads for ReRAM-Based IMC",  2025 IEEE International Symposium on Circuits and Systems,  London, UK  (Accepted)

   5. N. Shah, J. Sakhuja, U. Ganguly, S. Lashkare, L. Somappa, "A Neuromodulation-based Spiking Neural Network using ReRAM Array",  2025 IEEE International Symposium on Circuits and Systems,  London, UK  (Accepted)

   6. T. Das, N.Ahmad, L. Somappa, S. Lashkare, "Enhanced ESD Protection Techniques for 10V Neurostimulator Circuits in 65nm CMOS Technology", IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2025, Hongkong

   7. P. Likhitkar, N. Maheshwari, S. Lashkare, "Controlling the Clamping Voltage in Punch-Through Diodes via N+ Well and Contact Design for Low Voltage System Level ESD Protection", IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2025, Hongkong 

   8. S. Patil, J. Sakhuja, A. Biswas, H. Hajare, A. Kadam, S. Deshmukh, A K Singh, S. Lashkare, N. R. Mohapatra, U. Ganguly, Electrical Tunability in Band-to-Band-Tunneling based Neuron for Low Power Neuromorphic Computing, IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2025, Hongkong

2024

1. T. Das, M. Pathak, S. Lashkare, "Dynamic Resistance Reduction Methods for Voltage Clamp Lowering to Enhance GGNMOS ESD Protection" 28th IEEE International Symposium on VLSI Design and Test (VDAT-2024) India 

2. N. Solanki, Harshvardhan Singh, J. Sakhuja, U. Ganguly, S. Lashkare, "Impact of Memory Parameters on Sensitivity Margin of Analog-to-Digital Converter Limiting Neural Network Density", 22nd Non-Volatile Memory Technology Symposium (NVMTS 2024) , South Korea 

3. J. Sakhuja, S. Lashkare, U. Ganguly "Device-Aware Quantization in Resistive Random Access Memory-Based Crossbar Arrays to Account for Device Non-Idealities ", 2024 Device Research Conference (DRC), USA

4. S. Shubham, S. Mohanty and S. Lashkare, "Fault Tolerance of Oscillatory Neural Network using PMO Oscillator", IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2024, India

5. P. Sharma, J. Pal and S. Lashkare, "In-memory Computing for Bit-wise Logical Operations using Capacitor-less Silicon-on-Insulator MOSFET", IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2024 India

6. H. Kumar, J. Sakhuja, S. Lashkare and U. Ganguly, "On-Voltage Designability by Triangular Barrier Engineering in Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM", IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2024 India 

7. J. Sakhuja, R. Joglekar, S. Lashkare and U. Ganguly, "Accelerated Bit Slicing Technique for In-Memory Computing Using Multi-Input Resistive Random Access Memory" IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2024 India 

8. A. Jain, M. I. Wani, S. Lashkare, S. Malik, "A Current-Excitation Based Circuit for Resistive Sensors with Lead Resistance Compensation" IEEE Applied Sensing Conference (APSCON) 2024 India

Pre-IITGN

1. Ujwal Uttarwar, Kunal Kaushik, Jayatika Sakhuja, Vivek Saraswat, Sandip Lashkare, Udayan Ganguly, “Limitations on Pitch Design due to Thermal Crosstalk in Pr1-xCaxMnO3 RRAM Crossbar Arrays ” 2023 SISPAD Japan

2. J Sakhuja, S Patil, S Mondal, S Lashkare, U Ganguly, Enhancement in Bipolar Conductance Linearity by One Transistor-One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), South Korea

3. J Sakhuja, V Saraswat, S Lashkare, U Ganguly, Vector-Matrix-Multiplication Acceleration with Multi-Input Pr0.7Ca0.3MnO3 based RRAM for Highly Parallel In-Memory Computing, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), South Korea

4. Wasi Uddin, Ajay Kumar Agrawal, Paritosh Meihar, Avinash Singh, Tarun Malviya, Rohit Ranjan, Sandip Lashkare, Kumar Priyadarshi, Udayan Ganguly,Five-Fold Reduction in RESET Energy Consumption by Nitrogen Doping in Phase Change Memory, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), South Korea

5. P Meihar, S Rowtu, S Lashkare, U Ganguly, A Ferroelectric Differential Bit Cell Based Multiple-Time Programmable Physical Unclonable Function (PUF) For IoT Devices Security, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), South Korea

6. Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh, Anmol Biswas, Vivek Saraswat, Sandeep Kumar, Sandip Lashkare, Udayan Ganguly, Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), South Korea

7. MH Ali, R Srinu, P Meihar, A Pandey, M Yadav, S Lashkare, U Ganguly, Enhanced Remnant Polarization (> 70 μC/cm2) at Low field and Low Processing Temperatures in ALD grown Ferroelectric Hf0.5Zr0.5O2, 2022 IEEE International Conference on Emerging Electronics (ICEE), India

8. S Lashkare, S Chouhan, A Bhat, U Ganguly , General Izhikevich Dynamics In PR0.7 CA0.3 MNO3 RRAM Neuron , 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

9. J Sakhuja, S Lashkare, V Saraswat, U Ganguly,Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed, 2020 Device Research Conference (DRC), 1-2

10. S Lashkare, J Sakhuja, U Ganguly, Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing, 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5

11. V Saraswat, S Lashkare, P Kumbhare, U Ganguly, Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise 2019 Device Research Conference (DRC), 195-196

12. S Lashkare, P Kumbhare, V Saraswat, S Chatterjee, U Ganguly,A Compact PrMnO3Based Oscillator as an Alternative to CMOS Ring Oscillator in a Smart Temperature Sensor, 2018 IEEE SENSORS, 1-4

13. S Lashkare, A Bhat, P Kumbhare, U Ganguly, Transient joule heating in PrMnO3 RRAM enables ReLU type neuron, 2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4

14. A Shukla, S Prasad, S Lashkare, U Ganguly, A case for multiple and parallel RRAMs as synaptic model for training SNNs, 2018 International Joint Conference on Neural Networks (IJCNN), 1-8

15. R. Meshram, B. Das, R. Mandapati, S. Lashkare, S. Deshmukh, S. Lodha, J. Schulze, U. Ganguly, “High Performance Triangular Barrier Engineered NIPIN Selector for Bipolar RRAM” International Memory Workshop (IMW) 2014 

16. S Deshmukh, S Lashkare, B Rajendran, U Ganguly, I-NPN: A sub-60mV/decade, sub-0.6 V selection diode for STTRAM, 71st Device Research Conference, 113-114, 2013

17. S. Lashkare, P. Karkare, P. Bafna, M.V.S. Raju, V.S.S. Srinivasan, J. Schulze, S. Chopra, S. Lodha, U. Ganguly, ” A Bipolar RRAM Selector with Designable Polarity Dependent On-Voltage Asymmetry” International Memory Workshop, 2013 

18. S. Lashkare, P. Karkare, P. Bafna, S. Deshmukh, V.S.S. Srivinasan, S. Lodha, U. Ganguly, Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM” Int. Conf. on Emerging Electronics, 2012

19. S. Deshmukh, R. Mandapati, S. Lashkare, A. Borkar, V.S.S. Srivinasan, S. Lodha, U. Ganguly, “Comparison of novel punch-through diode (NPN) selector with MIM selector for Bipolar RRAM” Non Volatile Memory Technology Symposium, Singapore, 2012

20. S. Chopra, P. Bafna, P. Karkare, S. Srinivasan, S. Lashkare, P. Kumbhare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, and U. Ganguly, “A Two Terminal Vertical Selector Device for Bipolar RRAM”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME), Honolulu, Hawaii, USA, October 7-12 2012 

21. P. Bafna, P. Karkare, S Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly, “Epitaxial Si Punch-Through based Selector for Bipolar RRAM”, DRC 2012

22. Saurabh Chopra, Pranil Bafna, Prateek Karkare, Senthil Srinivasan, Sandip Lashkare, Pankaj Kumbhare, Yihwan Kim, Swami Srinivasan, Satheesh Kuppurao, Saurabh Lodha, Udayan Ganguly,A two terminal vertical selector device for bipolar RRAM , 2012

Patents

1. S. Lashkare, A Low Voltage Electrostatic Discharge Protection Device" , (Indian Patent Application No. 202421050239)

2. J. Sakhuja, S. Rowtu, S. Patil, S. Lashkare, U. Ganguly, “Method for Performing Silicon Integration Process for Resistive Memories” (Granted: Indian Patent 564315 (28/03/2025 )) 

3. S. Patil, J. Sakhuja, A. Singh, A. Biswas, V.Saraswat, S. Kumar, S. Lashkare, U. Ganguly, “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing,” (Granted Indian Patent Number: 558249)

4. S Kim, S Prasad, NS Sreeram, S Lashkare, C Kocon, Electrostatic discharge protection devices with high current capability, US Patent App. US20230223395A1

5. C Kocon, S Kim, NS Sreeram, S Prasad, S Lashkare, Semiconductor devices with high current capability for electrostatic discharge or surge protection, US Patent App. US20230223393A1 

6. SG Lashkare, V Saraswat, PS Kumbhare, U Ganguly,Method for fabricating neuron oscillator including thermal insulating device, US Patent 11,323,065,  (Granted: Indian Patent 508013  (07/02/2024), US Patent 11,323,065)

7. S. Lashkare, S. Subramoney, U. Ganguly “METHOD FOR HANDLING LOGICAL OPERATION IN MEMORY DEVICE ” (Granted Indian Patent Number:496652 )

8. U Ganguly, V. V. Moghe, D. Khilwani, V Saraswat, P.S. Kumbhare, M.S. Baghini, S. Lashkare, S. Subramoney, “PrxCa1-xMnO3 based Stochastic Neuron for Boltzmann Machine ” (Granted Indian Patent Number: 511679)