List of Publications

Journals

1. Paritosh Meihar, Srinu Rowtu, Sandip Lashkare, Ajay Kumar Singh, Halid Mulaosmanovic, Veeresh Deshpande, Stefan Dunkel, Sven Beyer, Udayan Ganguly, "Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications", IEEE TED 2024 link

2. Shubham Patil, Sandeep Kumar, Adityanarayan H Pandey, Swagata Bhunia, Bhaveshkumar Kamaliya, Anand Sharma, Sandip Lashkare, Rakesh G. Mote, Apurba Laha, Veeresh Deshpande, Udayan Ganguly, "Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application" Thin Solid Films, 2024 link

3. Paritosh Meihar, Srinu Rowtu, Vivek Saraswat, Sandip Lashkare, Halid Mulaosmanovic, Ajay Kumar Singh, Stefan Dünkel, Sven Beyer, and Udayan Ganguly, "FeFET-based MirrorBit cell for High-density NVM storage" IEEE TED 2024 link

4. Shubham Patil, Anand Sharma, Gaurav R, Abhishek Kadam, Ajay Kumar Singh, Sandip Lashkare, Nihar Ranjan Mohapatra, and Udayan Ganguly, “Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron” IEEE TED 2023 link

5. Hanif Ali, Adityanarayan Pandey, Rowtu Srinu, Paritosh Meihar, Shubham Patil, Sandip Lashkare, Veeresh Deshpande, Udayan Ganguly, “Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO2 on Silicon” IEEE Transactions on Electron Devices, 2023 link

6. S Rowtu, P Meihar, A Pandey, MH Ali, S Lashkare, U Ganguly, "Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr> 70 μC/cm2) in Hf0. 5Zr0. 5O2 Thin Films", IEEE Transactions on Electron Devices 70 (7), 3536-3541, 2023 link

7. S Lashkare, W Uddin, K Priyadarshi, U Ganguly, "Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories", Proceedings of the National Academy of Sciences, India Section A: Physical Sciences, 2023 link

8. J Sakhuja, S Rowtu, S Patil, S Lashkare, U Ganguly, "Integration of Non-Filamentary Pr0.7Ca0.3MnO3 – based Memristor with Silicon-PN Junction", IEEE Electron Device Letters, 2023 link

9. Shahid Malik, Kaushal Kishore, Laxmeesha Somappa, Sandip Lashkare, Tarikul Islam, SA Akbar, Maryam Shojaei Baghini, "A dual-slope-based capacitance-to-time signal conditioning circuit for leaky capacitive sensors", IEEE Transactions on Instrumentation and Measurement 70, 1-8, 2021 link

10.  J Sakhuja, S Lashkare, K Jana, U Ganguly, "Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM", IEEE Transactions on Electron Devices 67 (12), 5520-5525, 2020 link

11. Vivek Saraswat, Shankar Prasad, Abhishek Khanna, Ashwin Wagh, Ashwin Bhat, Neeraj Panwar, Sandip Lashkare, Udayan Ganguly, "Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM", IEEE Transactions on Electron Devices 67 (9), 3610-3617, 2020 link

12. S Lashkare, S Subramoney, U Ganguly, "Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing", IEEE Electron Device Letters 41 (9), 1344-1347, 2020 link

13. S Lashkare*, V Saraswat*, U Ganguly, "Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM", ACS Applied Electronic Materials 2 (7), 2026-2031, 2020 link

14. Devesh Khilwani*, Vineet Moghe*, Sandip Lashkare, Vivek Saraswat, Pankaj Kumbhare, Maryam Shojaei Baghini, Srivatsava Jandhyala, Sreenivas Subramoney, Udayan Ganguly , "PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem", APL Materials 7 (9), 2019 link

15. AV Babu, S Lashkare, U Ganguly, B Rajendran, "Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics" Neurocomputing 321, 227-236, 2018 link

16. S Lashkare, P Kumbhare, V Saraswat, U Ganguly, "Transient joule heating-based oscillator neuron for neuromorphic computing", IEEE Electron Device Letters 39 (9), 1437-1440 2018 link

17. S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly, "PCMO RRAM for integrate-and-fire neuron in spiking neural networks", IEEE Electron Device Letters 39 (4), 484-487, 2018 link

18. S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly, "PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP", IEEE Electron Device Letters 38 (9), 1212-1215, 2017 link

19. VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, Y Kim, S Srinivasan, S Kuppurao, S Lodha, Udayan Ganguly, "Punchthrough-diode-based bipolar RRAM selector by Si epitaxy", IEEE Electron Device Letters 33 (10), 1396-1398 , 2012 link

Conferences

1. Jayatika Sakhuja, Sandip Lashkare, Udayan Ganguly "Device-Aware Quantization in Resistive Random Access Memory-Based Crossbar Arrays to Account for Device Non-Idealities ", 2024 Device Research Conference (DRC) (Accepted)

2. Sai Shubham, Siddharth Mohanty and Sandip Lashkare, "Fault Tolerance of Oscillatory Neural Network using PMO Oscillator", IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2024 (accepted) 

3. Prateek Sharma, Jaisingh Pal and Sandip Lashkare, "In-memory Computing for Bit-wise Logical Operations using Capacitor-less Silicon-on-Insulator MOSFET", IEEE Electron Devices Technology & Manufacturing Conference (EDTM)2024 (accepted) 

4. Hemant Kumar, Jayatika Sakhuja, Sandip Lashkare and Udayan Ganguly, "On-Voltage Designability by Triangular Barrier Engineering in Bipolar Silicon NIPIN-Selector for Asymmetric Bipolar RRAM", IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2024 (accepted) 

5. Jayatika Sakhuja, Radhika Joglekar, Sandip Lashkare and Udayan Ganguly, "Accelerated Bit Slicing Technique for In-Memory Computing Using Multi-Input Resistive Random Access Memory" IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2024 (accepted) 

6. A. Jain, M. I. Wani, S. Lashkare, S. Malik, "A Current-Excitation Based Circuit for Resistive Sensors with Lead Resistance Compensation" IEEE Applied Sensing Conference (APSCON) 2024 

7. Ujwal Uttarwar, Kunal Kaushik, Jayatika Sakhuja, Vivek Saraswat, Sandip Lashkare, Udayan Ganguly, “Limitations on Pitch Design due to Thermal Crosstalk in Pr1-xCaxMnO3 RRAM Crossbar Arrays ” SISPAD 2023

8. J Sakhuja, S Patil, S Mondal, S Lashkare, U Ganguly, Enhancement in Bipolar Conductance Linearity by One Transistor-One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

9. J Sakhuja, V Saraswat, S Lashkare, U Ganguly, Vector-Matrix-Multiplication Acceleration with Multi-Input Pr0.7Ca0.3MnO3 based RRAM for Highly Parallel In-Memory Computing, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

10. Wasi Uddin, Ajay Kumar Agrawal, Paritosh Meihar, Avinash Singh, Tarun Malviya, Rohit Ranjan, Sandip Lashkare, Kumar Priyadarshi, Udayan Ganguly,Five-Fold Reduction in RESET Energy Consumption by Nitrogen Doping in Phase Change Memory, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3

11. P Meihar, S Rowtu, S Lashkare, U Ganguly, A Ferroelectric Differential Bit Cell Based Multiple-Time Programmable Physical Unclonable Function (PUF) For IoT Devices Security, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

12. Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh, Anmol Biswas, Vivek Saraswat, Sandeep Kumar, Sandip Lashkare, Udayan Ganguly, Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing, 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

13. MH Ali, R Srinu, P Meihar, A Pandey, M Yadav, S Lashkare, U Ganguly, Enhanced Remnant Polarization (> 70 μC/cm2) at Low field and Low Processing Temperatures in ALD grown Ferroelectric Hf0.5Zr0.5O2, 2022 IEEE International Conference on Emerging Electronics (ICEE)

14. S Lashkare, S Chouhan, A Bhat, U Ganguly , General Izhikevich Dynamics In PR0.7 CA0.3 MNO3 RRAM Neuron , 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

15. J Sakhuja, S Lashkare, V Saraswat, U Ganguly,Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed, 2020 Device Research Conference (DRC), 1-2

16. S Lashkare, J Sakhuja, U Ganguly, Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing, 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5

17. V Saraswat, S Lashkare, P Kumbhare, U Ganguly, Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise 2019 Device Research Conference (DRC), 195-196

18. S Lashkare, P Kumbhare, V Saraswat, S Chatterjee, U Ganguly,A Compact PrMnO3Based Oscillator as an Alternative to CMOS Ring Oscillator in a Smart Temperature Sensor, 2018 IEEE SENSORS, 1-4

19. S Lashkare, A Bhat, P Kumbhare, U Ganguly, Transient joule heating in PrMnO3 RRAM enables ReLU type neuron, 2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4

20. A Shukla, S Prasad, S Lashkare, U Ganguly, A case for multiple and parallel RRAMs as synaptic model for training SNNs, 2018 International Joint Conference on Neural Networks (IJCNN), 1-8

21. R. Meshram, B. Das, R. Mandapati, S. Lashkare, S. Deshmukh, S. Lodha, J. Schulze, U. Ganguly, “High Performance Triangular Barrier Engineered NIPIN Selector for Bipolar RRAM” International Memory Workshop (IMW) 2014 

22. S Deshmukh, S Lashkare, B Rajendran, U Ganguly, I-NPN: A sub-60mV/decade, sub-0.6 V selection diode for STTRAM, 71st Device Research Conference, 113-114, 2013

23. S. Lashkare, P. Karkare, P. Bafna, M.V.S. Raju, V.S.S. Srinivasan, J. Schulze, S. Chopra, S. Lodha, U. Ganguly, ” A Bipolar RRAM Selector with Designable Polarity Dependent On-Voltage Asymmetry” International Memory Workshop, 2013 

24. S. Lashkare, P. Karkare, P. Bafna, S. Deshmukh, V.S.S. Srivinasan, S. Lodha, U. Ganguly, Design of epitaxial Si punch-through diode based selector for high density bipolar RRAM” Int. Conf. on Emerging Electronics, 2012

25. S. Deshmukh, R. Mandapati, S. Lashkare, A. Borkar, V.S.S. Srivinasan, S. Lodha, U. Ganguly, “Comparison of novel punch-through diode (NPN) selector with MIM selector for Bipolar RRAM” Non Volatile Memory Technology Symposium, Singapore, 2012

26. S. Chopra, P. Bafna, P. Karkare, S. Srinivasan, S. Lashkare, P. Kumbhare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, and U. Ganguly, “A Two Terminal Vertical Selector Device for Bipolar RRAM”, Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME), Honolulu, Hawaii, USA, October 7-12 2012 

27. P. Bafna, P. Karkare, S Srinivasan, S. Chopra, S. Lashkare, Y. Kim, S. Srinivasan, S. Kuppurao, S. Lodha, U. Ganguly, “Epitaxial Si Punch-Through based Selector for Bipolar RRAM”, DRC 2012

28. Saurabh Chopra, Pranil Bafna, Prateek Karkare, Senthil Srinivasan, Sandip Lashkare, Pankaj Kumbhare, Yihwan Kim, Swami Srinivasan, Satheesh Kuppurao, Saurabh Lodha, Udayan Ganguly,A two terminal vertical selector device for bipolar RRAM , 2012

Patents

1. J. Sakhuja, S. Rowtu, S. Patil, S. Lashkare, U. Ganguly, “Method for Performing Silicon Integration Process for Resistive Memories” (Indian Patent Application No. 202321013267) 

2. S. Patil, J. Sakhuja, A. Singh, A. Biswas, V.Saraswat, S. Kumar, S. Lashkare, U. Ganguly, “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing,” (Indian Patent Application No. 202321013437)

3. S Kim, S Prasad, NS Sreeram, S Lashkare, C Kocon, Electrostatic discharge protection devices with high current capability, US Patent App. 17/854,998

4. C Kocon, S Kim, NS Sreeram, S Prasad, S Lashkare, Semiconductor devices with high current capability for electrostatic discharge or surge protection, US Patent App. 17/855,105

5. SG Lashkare, V Saraswat, PS Kumbhare, U Ganguly,Method for fabricating neuron oscillator including thermal insulating device, US Patent 11,323,065,  (Granted: Indian Patent 508013  (07/02/2024), US Patent 11,323,065)

6. S. Lashkare, S. Subramoney, U. Ganguly “METHOD FOR HANDLING LOGICAL OPERATION IN MEMORY DEVICE ” (Granted Indian Patent Number:496652 )

7. U Ganguly, V. V. Moghe, D. Khilwani, V Saraswat, P.S. Kumbhare, M.S. Baghini, S. Lashkare, S. Subramoney, “PrxCa1-xMnO3 based Stochastic Neuron for Boltzmann Machine ” (Granted Indian Patent Number: 511679)

Newsletter

1. U. Ganguly, S. Lashkare, S. Ganguly, “India’s Rise in Nanoelectronics Research”, pp. 46-48 IEEE EDS Newsletter Jan. 2021 (Full article)

Open Positions

• We are always looking for motivated students in the group who wish to pursue their Ph.D. in the areas of semiconductor device physics, emerging memories, and neuromorphic computing. Please look out for the admissions call on the IITGN website. https://www.iitgn.ac.in/admissions. 

• Enthusiastic undergraduate, MS, and PhD students are encouraged to send their CVs to sandip.lashkare@iitgn.ac.in

• Post-doc positions available. 

  • Ph.D. in electrical engineering with Device Physics Modeling and Simulation experience.

  • Ph.D. in electrical engineering with Mixed Signal Circuits design experience.

• I accept interns only through the IITGN Internship Program (link)