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NEXT-GEN negative capacitance fets
NEXT-GEN negative capacitance fets
As Moore`s law continue to reach its scaling limit, power consumption becomes a major concern in conventional CMOS based integrated circuits and systems where the lowest attainable sub-threshold swing is limited to 60 mV/decade at room temperature. A new class of devices, known as negative capacitance FETs, uses a ferroelectric in the gate stack to achieve sub-60 mV/decade subthreshold behavior, leading to ultra-low power devcies. In our group, we use TCAD simulations to explore how the phenomenon of negative capacitance manifests into emerging device architectures such as FinFET, Nanowire, Nanosheets, Forksheets and Complementary FET.
Publications: Semiconductor Science and Technology, IEEE Transcations on Electron Devices, Engineering Research Expres, MRS Meeting, ECS Meeting.
STEEP-SWITCHING ISFETs
STEEP-SWITCHING ISFETs
Collaborator: Prof. Navakanta Bhat, IISc Bangalore (India).
Ion sensitive field-effect transistors (ISFETs) have become attractive candidates for label-free biosensing due to low cost, low power consumption, small size, ease of on-chip integration as well as their ability to do rapid and real-time electronic detection.Emerging ISFETs with transition metal dichalcogenides (TMDCs)-based 2D materials, or negative capacitance effect offer steep-switching behavior and are excellent candidates for highly sensitive ISFETs. Here we use, TCAD simulations to design and model next generation of steep-switching ISFETs.
Publications: IEEE Transcations on Electron Device, npJ 2D mnaterials and Applications, IEEE Sensors Journal, ACS Omega
metamaterial-INSPIRED BIOSENSORS
metamaterial-INSPIRED BIOSENSORS
Metamaterial-inspired biosensors are attractive candidates for clinical diagnosis due to their ability to detect small number of biomolecules at ultra-low concentrations. Conventional plasmonic sensors, based on surface plasmon polaritons (SPPs) and localized surface plasmons (LSPs), fail to detect dilute analytes of low molecular weight (<500 Da) close to single molecule detection, which is essential for example, in early cancer screening. Recently, a new class of metamaterials with hyperbolic dispersion profiles have shown extremely high sensitivity for bio-detection. In this group, we use finite-difference time-domain (FDTD) simulations to design and demonstrate highly sensitive metamaterial based plasmonic nanostructures for next-generation biosensors.
Publications: RSC Advances, IEEE Sensors Journals (Under Preparation).
nanoTEXTURED OPTELECTRONICS
nanoTEXTURED OPTELECTRONICS
Collaborator: Prof. M. Saif Islam, UC Davis (USA)
Nanoscale texturing have been used for light trapping in a wide range of optoelectronic and photonic devices, ranging from solar cells to ultra-thin body optical photodetectors. We use finite-difference time-domain (FDTD) simulations to investigate light trapping in novel nanostructures for future photovoltaic and photodetector devices.
Publications: OSA Continuum, Nanoscale Advances, ACS Applied Nanomaterials
PEROVSKITE & TANDEM SOLAR CELLS
PEROVSKITE & TANDEM SOLAR CELLS
Collaborators:
Prof. Dr. Samia Subrina (BUET)
Prof. Dr. Alamgir Kabir (DU)
We use Density Functional Theory (DFT) calculations to study the optoelectronic properties, density of states and band structures in perovskite solar cells.A myriad of dopants and co-dopants are studied to find suitable members of the periodic table that will improve the optical properties such as light absorption for solar cell applications. Finally, the DFT extracted parameters are fed into device simulators to extract the electrical characteristics of the proposed solar cell device. In addition to single cell devices, we also study the tandem structures.
Publications: The Journal of Physical Chemistry C, Energy Technology, Solar Energy Materials and Solar Cells, Solar Energy
PHASE CHANGE MEMORY (PCM) DEVICES
PHASE CHANGE MEMORY (PCM) DEVICES
Collaborators:
Prof. Dr. Alamgir Kabir (DU)
Phase-Change Random-Access Memory (PCRAM) is one of the emerging non-volatile memory technologies based on a chalcogenide alloy (combination of Germanium, Antimony and Tellurium) materials, where the data is stored depending on the amorphous (high resistance, logic = 0) or crystalline (low resistance, logic = 1) of the material. We use finite element modeling (FEM) to comprehensively develop thermoelectric models for the phase change behavior of these emerging devices. We also perform DFT simulations to understand the thermal behavior of GST superlattices.
Publications: ACS Applied Electronic Materials
vlsi CIRCUIT design
vlsi CIRCUIT design
Collaboration:
Dr. Hasan Uz Zaman (Samsung, USA)
Modern image and video processing operations, digital signal processing (DSP) chips, microprocessors and many other applications require large scale of arithmetic operations.One of the most elementary arithmetic operations is addition which is substantially and repetitively used in modern computational applications.With a goal to achieve low power delay product (PDP), we explore novel designs for Hybrid Full Adders using Pass Transistors, Transmission Gates and Static CMOS logic. The proof-of-concept has been demonstrated in 45 nm technology node and beyond.
Publications: IEEE Transactions on Circuits and Systems-II, Engineering Science and Technology-an International Journal (Elsevier), Microelectronics Journal (Springer Nature), Computers and Electrical Engineering (Elsevier).
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