A. Ghosh et al., "Ion intercalation enabled tunable frequency response in lithium niobite memristors", IEEE Transactions on Electron Devices 70 (2), 2022.
W.A. Doolittle, Christopher M Matthews, Habib Ahmad, Keisuke Motoki, Sangho Lee, A. Ghosh et al., "Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis", Applied Physics Letters 123 (7), 2023.
A. Ghosh et al., "Growth, Structural, and Electrical Properties of Heteroepitaxial Germanium-on-Silicon Thin-Films", AIP Advances, 2017.
A Ghosh et. al., "Impact of Electrode Chemistry on the Non-Volatile Performance of Lithium Niobite Memristors for Neuromorphic Computing", ECS Journal of Solid State Science and Technology, 2020.
B. Zivasatienraj, A. Weidenbach, B. Tellekamp, A. Ghosh, T. McCrone and W. A. Doolittle, "Temporal Versatility from Intercalation-based Neuromorphic Devices Exhibiting 150 millivolt Non-volatile Operation", Journal of Applied Physics, 2020.
M. K. Hudait, M. B. Clavel, J. S. Liu, A. Ghosh, N. Jain, R. Bodnar, “Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium”, ACS Applied Materials and Interfaces, 2017.
A. Ghosh et. al., "Ion Intercalation Enabled Tunable Frequency Response in Lithium Niobite Memristors", Transactions on Electron Devices, 2023.
H. Ahmad, Z. Engel, A. Ghosh, C. M. Matthews, W. A. Doolittle, "GaN: Be I-Layer-Based High-Power pin Diodes Achieving Large Quasi-Vertical MBE Breakdown Performance", IEEE Transactions on Electron Devices, 2022.
Advanced Semiconductor Technology Facility, Georgia Tech, Atlanta, GA
Lithium Niobite based memristive devices for Neuromorphic Computing
Investigation of two terminal and three terminal memristors using adaptive oxide systems for use as synaptic elements in true analog neuromorphic computing systems.
Sputter Deposition of thin films, material characterization, device fabrication and electrical characterization.
Advanced Devices and Sustainable Energy Laboratory, Virginia Tech, Blacksburg, VA.
Heterogeneous Integration of III-V Solar Cells on Silicon
Investigation of conversion efficiency of single junction GaAs cells grown on Si using all-epitaxial III-V/IV buffer approaches, as an alternative to current III-V cells grown on expensive and smaller diameter germanium (Ge) or GaAs substrates.
Molecular beam epitaxial (MBE) growth, characterization of material stack (AFM, XRD, TEM, EDS) and fabrication of solar cells
Electrical characterization of developed solar cells via Current-Voltage (IV) measurement and Quantum efficiency (QE) measurement
Optimization of base region thickness to compensate for dislocations propagating into the active region
Germanium-on-Silicon Thin Films for Electronic Applications
Investigation of the structural, interfacial and transport properties of MBE grown lattice mismatched (4.2%) 'Ge-on-Si' heterostructures. Characterization of material stack and in-house fabricated MOS capacitors for:
Electrical properties (C-V, Dark and Light I-V, Quantum Efficiency, Electrical transport via Hall measurement)
Structural and strain relaxation properties (via XRD, TEM, EDS, AFM, and Raman)
Optical properties (Bandgap via PL)
Modelling of Hall measured mobility data via theoretical consideration of the scattering processes in Ge epilayer
Modeling of Perovskite-on-GaAs Multijunction Solar Cells (Ongoing)
Simulation and optimization of tandem perovskite solar cells on Silicon and GaAs junctions for cost effective and high efficiency photovoltaic applications on Crosslight APSYS platform.
Quantum Computing Devices and Hardware, Fall 2019
(Instructor: Sr. Asif Khan, Grade: A)
Spin Qubit realization using mesoscopic semiconductor systems based on Gallium Nitride heterostructures
Literature review of spin qubit device technologies using CMOS (Si), GaAs and GaN thin films and comparison of these technologies in the realization of NISQ era Quantum computers.
Nanoelectronics, Fall 2016
(Instructor: Dr. Xiaoting Jia, Grade: A)
Application of Graphene in Flexible Electronics
Literature review of multifunctional electronic devices on flexible or stretchable substrate via Graphene layers. Study of thin film field effect transistor, energy storage devices (graphene paper), non volatile memory devices and solar cells employing graphene and graphene oxide as active layers to improve or enable performance.
IC Design and Fabrication Centre, Jadavpur University, Kolkata, India.
Metal/ZnO/p-Si/Al Hetero-structure for Hydrogen Detection
Fabrication of Ni/n-ZnO/p-Si/Al, Au/n-ZnO/p-Si/Al and Pd/n-ZnO/p-Si/Al device structures and their electrical characterization to determine ideality factor and Schottky barrier height of heterojunctions.
Nanocrystalline ZnO thin film deposition on a silicon substrates by sol-gel method and dip-coating; thermal evaporation deposition of metal contacts.
Evaluation of junction parameters using room temperature I-V measurement, and Hydrogen gas sensing response of devices investigation using nitrogen as carrier gas.
NanoBios Lab, IIT Bombay, Mumbai, India
Iontophoresis Patch for Non-invasive Transdermal controlled Drug delivery with Bio-feedback
Circuit Design and prototyping of a microcontroller (Atmel) based iontophoresis patch for non-invasive transdermal drug delivery with skin impedance feedback for optimal drug delivery.
Instrumentation of a portable multi-analyte sensor for blood and urine for Bio-Sense Technologies, a Startup organization involved in advanced but affordable healthcare solutions.
IIT Kharagpur, Kharagpur, India
In House development of MEMS capacitive Accelerometer
Using COMSOL Multiphysics platform to model, design, characterize and tune a non-linear spring element; specifically studying the softening spring effect and bandwidth widening during frequency down-sweeps.
Contact: aheli303@gmail.com