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Memory Manufacture Under Microgravity (MMuM) and Irradiation Effects on Memory
Resistive random access memory (RRAM) has attracted industrial and academic interests in emulating biological synapse features for neuromorphic computing for its feasibility of analog behaviors. ZnO-based crossbar RRAMs are presented by electrohydro-dynamic (EHD) printing technology under in-space manufacture environmentas microgravity (μG). Additionally, a radiation-hardened oxide-based memory device is developed by CVD for low-power in-space applications.
[AEM 2025] [AEM 2025] [IEEE TED 2024]
Selectorless Resistance Random Access Memory (RRAM)
The low power, one-resistor-only (1R-only) selectorless RRAM is presented as a solution for suppressing the sneak path current (SPC) and read errors in high density memory applications. Our current results provided comprehensive insights into the device structure design and optimized operation approaches.
[ECSJSST 2025] [ECSJSST 2023] [IEEE TED 2021] [Sci Rep 2019] [AIP Adv 2019] [ECST 2019] [JPhyD 2018] [ECST 2018] [Nanoscale 2018] [ECST 2017]
Van der Waals (vdW) Materials Based Microelectronics
Emerging post-CMOS solid-state devices: Synaptic Behaviors in Memory Devices for AI Applications
The device with biological synaptic behaviors by integrating metal oxide memristor is realized. The capability for spike-induced synaptic behaviors (LTP, LTD, and STDP) is demonstrated, representing critical milestones for the use of metal oxide–based materials in future neuromorphic computing applications.
BEOL Compatible Reconfigurable One Time Programmable Memory
The via-type one-time programmable (OTP) memory and self-rectified resistive switching memory as resistive random access memory (RRAM) are demonstrated. The current development has achieved that co-existing memory functionality (OTP and ReRAM) with mitigating scaling requirement, low fabrication complexity, and lower operational voltages (< 2V).
Helical-shaped Hybrid Functional Devices
The dual functions on nano helical shaped memory have been presented, i.e., nonvolatile switching (NVS) and volatile switching (VS). The selectivity of volatile switching devices can be integrated as a selector device in a memory application. Meanwhile, the device's nonvolatile switching behavior has shown as the self-selective characteristic for suppressing the sneak path current in the high-density memory array without switch devices integration. The highly CMOS compatible materials as HfOx and WOx have been investigated and presented in this work as candidates of embedded memory and selectors in future computational applications.
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