Conference Proceedings

Yifu Huang, Yuqian Gu, Xiaohan Wu, Ruijing Ge, Yao-Feng Chang, Ying-Chen Chen, Deji Akinwande, Jack Lee, "Understand the Resistive Switching and Reliability Mechanisms of 2D TMD Material: Defect Engineering, Finite Element Analysis and Monte Carlo Modeling" Bulletin of the American Physical Society (2023) (Las Vegas, March)

Justin Stouffer, Ying-Chen Chen, Yao-Feng Chang, Yifu Huang"Understanding of the Interaction between Electrical and Thermal Properties on Bifunctional Memristors and Reprogrammable Memory" Bulletin of the American Physical Society (2023) (Las Vegas, March)

John F. Hardy, John A. Castaneda, John Gibbs, and Ying-Chen Chen, "Helical-shaped Tungsten Oxide as Active Layer with Dual Switching Behaviors for Emerging Memory Applications" 2023 7th IEEE Electron Devices Technology and Manufacturing Conference (IEEE EDTM) (2023) (Seoul, Korea March 7-10).

Ying-Chen Chen, Sumant Sarkar, John Gibbs, Chao-Cheng Lin, Chang-Hsien Lin, “Dual-Functional Nano Helical-Shaped Devices for Self-rectified Memory and Selector Applications” 53rd IEEE Semiconductor Interface Specialists Conference (SISC), (2022) (San Diego, CA, Dec 7-10th).

Alex Weiss, John F. Hardy, Jordan Beverly, Chao-Cheng Lin, Chang-Hsien Lin, Chih-Han Chung, Yao-Feng Chang, Divya Panchanathan, Jana Stoudermire, Ying-Chen Chen "Effect of γ irradiation on HfOx-based ReRAM with CMOS compatible materials for potential defect-free memory fabricated in LEO" 11th Annual International Space Station Research and Development Conference (2022) (Washington DC, July 25-28th)

Ying-Chen Chen, Justin Stouffer, Favian Villanueva, Jordan Beverly "Ambient Effects on Reprogrammable Read-only Selector-free Memory for the Embedded NVM Applications" 80th IEEE Device Research Conference (DRC) (2022) (Ohio State University, Columbus, OH, June 26-29th)

Ying-Chen Chen, “Multifunctional Ruthenium Oxide for BEOL-compatible Reprogrammable One-Time-Programmable (OTP) Memory Application” 52nd IEEE Semiconductor Interface Specialists Conference (SISC) (2021)

Ying-Chen Daphne Chen, Sumant Sarkar, John Gibbs, "Self-Rectified Memristor with Bimodal Functionality and Forming Polarity Responses in Crossbar Array Applications" 79th IEEE Device Research Conference (DRC) (2021) 

Ying-Chen Chen, Jason K. Eshraghian, Isaiah Shipley, Maxwell Weiss, “Analog Synaptic Behaviors in Carbon-Based Self-Selective RRAM for In-Memory Supervised Learning”, IEEE 71st  Electronic Components and Technology Conference (ECTC) (2021)

Ying-Chen Chen, "Electroforming Polarity on Bilayer Self-Selective RRAM for Energy Efficient High-Density Crossbar Array Applications", 51th IEEE Semiconductor Interface Specialists Conference (SISC) , Dec-16-19 (2020)

Ying-Chen Chen*, Chao-Cheng Lin, Sungjun Kim, and Jack C. Lee, “Selectorless Oxide-based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications” ECS Transactions (2019)

Ying-Chen Chen*, Szu-Tung Hu, Chao-Cheng Lin, Jack C. Lee, “Resistive Switching Early Failure and Gap Identification in Bilayer Selectorless RRAM Applications” 77th Device Research Conference (DRC) (2019)

Ying-Chen Chen*, Chih-Yang Lin, Hui-Chun Huang and Jack C. Lee “Energy Efficient Operation Schemes of Nonlinear Selectorless RRAM for Crossbar Array Applications” 61st Electronic Materials Conference (EMC) (2019)

Ying-Chen Chen*, Chao-Cheng Lin, Sungjun Kim, Yao-Feng Chang, Jack Lee, “Non-Uniform Dielectric Selectorless Resistive Switching Memory and Reliability Determination for Low Power Array Applications” 235th Meeting of The Electrochemical Society (2019)

Ying-Chen Chen*, Yao-Feng Chang, Jack C. Lee, “Selector-Less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications” ECS Transactions (2018) 

Ying-Chen Chen*, Chih-Yang Lin, Yao-Feng Chang and Jack Lee, "Energy Efficient Nonlinear Selectorless RRAM by Current Sweep Operation for Crossbar Array Applications" 49th IEEE Semiconductor Interface Specialists Conference (SISC) (2018)

Ying-Chen Chen*, Xiaohan Wu, Yao-Feng Chang and Jack C. Lee, “Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications” 76th Device Research Conference (DRC) (2018

Ying-Chen Chen, Chih-Yang Lin, Yao-Feng Chang, Ting-Chang Chang, Jack C. Lee, “Selector-Less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications” 233rd Meeting of The Electrochemical Society (2018)

Jia Chen, Sungjun Kim, Ying-Chen Chen, Min-Hwi Kim, Yi Li, Xiang-Shui Miao, Yao-Feng Chang, Byung-Gook Park, Jack C. Lee, “Synaptic Properties Considering Temperature Effect in HfOx-Based Memristor – Demonstration of Homo-thermal Synaptic Behaviors” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2018) 

Ying-Chen Chen*, Yao-Feng Chang, Chih-Yang Lin, Xiaohan Wu, Gaobo Xu, Burt Fowler, Ting-Chang Chang, Jack C. Lee, “Built-in Nonlinear Characteristics of Low Power Operating One-Resistor Selector-Less RRAM By Stacking Engineering” ECS Transactions (2017)

Ying-Chen Chen, Yao-Feng Chang, Chih-Yang Lin, Xiaohan Wu, Gaobo Xu, Burt Fowler, Ting-Chang Chang, Jack C. Lee, “Built-in Nonlinear Characteristics of Low Power Operating One-Resistor Selector-Less RRAM By Stacking Engineering” 232nd Meeting of The Electrochemical Society (2017)

Chih-Yang Lin, Ying-Chen Chen, MeiqiGuo, Chih-Hung Pan, Fu-Yuan Jin, Cheng-Chih Hsieh, Xiaohan Wu, Min-Chen Chen, Yao-Feng Chang, Fei Zhou, Burt Fowler, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Yonggang Zhao, Simon M. Sze, Sanjay Banerjee, Jack C. Lee, "A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector", International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Taiwan, April 24-27, (2017)

Ying-Chen Chen*, Yao-Feng Chang, Xiaohan Wu, Meiqi Guo, Fei Zhou, Burt Fowler, and Jack C. Lee, "Characterization of SiOx/HfOx bilayer Resistive-Switching Memory Devices" ECS Transaction (2016)

Meiqi Guo, Ying-Chen Chen, Yao-Feng Chang, Xiaohan Wu, Burt Fowler, Yonggang Zhao and Jack C. Lee, "Characteristics of Nb-doped SrTiO3 and HfO2-based Selector Devices," Device Research Conference (DRC) (2016) 

Ying-Chen Chen, Yao-Feng Chang, Xiaohan Wu, Meiqi Guo, Fei Zhou, Burt Fowler, Jack C Lee, “Characterization of SiOx/HfOx bilayer Resistive-Switching Memory Devices,” Electrochemical Society (ECS) Meeting, May 29-Jun 02 (2016) 

Ying-Chen Chen, Yao-Feng Chang, Burt Fowler, Fei Zhou, Xiaohan Wu, Cheng-Chih Hsieh, Heng-Lu Chang, Chih-Hung Pan, Min-Chen Chen, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang and Jack C. Lee, “Comprehensive Study of Intrinsic Unipolar SiOx-Based ReRAM Characteristics in AC Frequency Response and Low Voltage (<2V) Operation,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 25-27 (2016) (Best Paper Award Candidate)

Ying-Chen Chen, Xiaohan Wu, Meiqi Guo, Fei Zhou, Yao-Feng Chang, Burt Fowler, Chih-Hung Pan, Ting-Chang Chang, Jack C Lee, "Memcomputing (Memristor+Computing) in Intrinsic SiOx-Based Resistive Switching Memory", 230th Meeting of The Electrochemical Society (2016) (Invited) 

Fei Zhou, Ying-Chen Chen, Xiaohan Wu, Meiqi Guo, Burt Fowler, Jack Lee “The Role of Oxygen Deficiency in SiOx Based Resistive Memory,” International Conference on Metallurgical Coatings and Thin Films (ICMCTF), April 25-29 (2016)

Ying-Chen Chen, Jia Cheng He, Shixuan Yang, Kristen Hansen, Luke Nicolini, Nanshu Lu "A Low-Cost, Highly Reusable Epidermal Sensor System (ESS) for Continuous and Synchronous Life Signal Monitoring," Materials Research Society (MRS), Nov 29-Dec 04 (2015)

Yao-Feng Chang, Li Ji, Ying-Chen Chen, Fei Zhou, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Ting-Chang Chang, Simon M. Sze, Edward T. Yu, Jack C. Lee "High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture," VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program, 28-30 April (2014)

Yao-Feng Chang, Ying-Chen Chen, Li Ji, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler and Jack C. Lee, “Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory”, IEEE Device Research Conference (DRC), June 23-26 135 (2013)