Journal Publication

Y.- C. Chen, "Self-Rectified Graphite-based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications," Frontiers in Nanotechnology (2021).

Y. -C. Chen, J. Lee and C. -Y. Lin, "Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application,"  IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4363-4367  (2021) DOI: 10.1109/TED.2021.3095438 

Ying-Chen Chen*, Chao-Cheng Lin, and Yao-Feng Chang, "Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions", Micromachines (as part of the Special Issue Progress of Emerging Hardware Development for Post-Moore’s Computing, IF: 2.806) Link

Hyojong Cho, Ji-Ho Ryu, Chandreswar Mahata, Muhammad Ismail, Ying-Chen Chen, Yao-Feng Chang, Seongjae Cho, Alexey N Mikhaylov, Jack C Lee, Sungjun Kim, "Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures" Applied Physics Letters (2020)

Yu-Lin Hsu, Yao-Feng Chang, Wei-Min Chung, Ying-Chen Chen, Chao-Cheng Lin, Jihperng Leu, "SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition" Applied Physics Letters (2020)

Mostafa Rahimi Azghadi, Ying-Chen Chen, Jason K. Eshraghian, Jia Chen, Chih-Yang Lin, Amirali Amirsoleimani, Adnan Mehonic, Anthony J Kenyon, Burt Fowler, Jack C. Lee , Yao-Feng Chang, "CMOS and Memristive Hardware for Neuromorphic Computing" Advanced Intelligent Systems (2020)

Chih-Yang Lin, Po-Hsun Chen, Ting-Chang Chang, Wei-Chen Huang, Yong-Fang Tan, Yun-Hsuan Lin, Wen-Chung Chen, Chun-Chu Lin, Yao-Feng Chang, Ying-Chen Chen, Hui-Chun Huang, Xiao-Hua Ma, Yue Hao, Simon M Sze, "A Comprehensive Study of Enhanced Characteristics with Localized Transition in Interface-type Vanadium-based Devices" Materials Today Physics (2020)

Ying-Chen Chen, Chih-Yang Lin, Hyojong Cho, Sungjun Kim, Burt Fowler, and Jack C. Lee, "Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications" Journal of Electronic Materials (2020) 

Sung Joon Yoon,  Ji-Ho Ryu, Muhammad Ismail, Ying-Chen Chen,  Yao-Feng Chang, Min Ju Yun, Hee-Dong Kim,  and  Sungjun Kim, "Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device," Applied Physics Letter (2019).

Ying-Chen Chen, Chao-Cheng Lin, Szu-Tung Hu, Chih-Yang Lin, Burt Fowler, and Jack Lee, "A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application" Scientific Reports (2019)

Ying-Chen Chen*, Hui-Chun Huang, Chih-Yang Lin, Szu-Tung Hu, and Jack C. Lee “Selectorless Resistive Switching Memory: Non-uniform Dielectric Architecture and Seasoning Effect Determination for Low Power Array Applications” AIP Advances (2019) (Featured on cover)

Sungjun Kim, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Miao Xiangshui, Yao-Feng Chang, Byung-Gook Park “Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching” Nanoscale (2019)

Ying-Chen Chen*, Szu-Tung Hu, Chih-Yang Lin, Burt Fowler, Hui-Chun Huang, Chao-Cheng Lin, Sungjun Kim, Yao-Feng Chang, and Jack C. Lee, “Graphite-based Selectorless RRAM: Improvable Intrinsic Nonlinearity for Array Applications” Nanoscale (2018)

Ying-Chen Chen*, Chih-Yang Lin, Hui-Chun Huang, Sungjun Kim, Burt Fowler, Yao-Feng Chang, Xiaohan Wu, Gaobo Xu, Ting-Chang Chang, and Jack C. Lee. "Internal Filament Modulation in Low-dielectric Gap Design for Built-in Selector-less Resistive Switching Memory Application" Journal of Physics D: Applied Physics (2018)

Ying-Chen Chen*, Hui-Chun Huang, Chih-Yang Lin, Sungjun Kim, Yao-Feng Chang, and Jack C. Lee “Effects of ambient sensing on SiOx-based resistive switching and resilience modulation by stacking engineering” ECS Journal of Solid State Science and Technology (2018)

Yao-Feng Chang,  Burt W Fowler,  Ying-Chen Chen,  Chih-Yang Lin,  Gaobo Xu,  Huichun Huang,  Jia Chen,  Sungjun Kim,  Yi Li  and  Jack C. Lee "Beyond SiOx: An Active Electronics Resurgence and Biomimetic Reactive Oxygen Species Production and Regulation from Mitochondrion" Journal of Materials Chemistry C (2018)

Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park, “Concurrent events of memory and threshold switching in Ag/SiNx/Si devices" J. Vac. Sci. Technol. (2018)

Chun-Kuei  Chen, Chih-Yang Lin, Po-Hsun Chen, Ting-Chang Chang, Chih-Cheng Shih, Yi-Ting Tseng, Hao-Xuan Zheng, Ying-Chen Chen, Yao-Feng Chang, Chun-Chu Lin and Hui-Chun Huang, “The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector” IEEE Transactions on Electron Devices, (99), pp.1-6, (2018)

Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang and Byung-Gook Park, “Dual Functions of V/SiOx/AlOy/p++Si Deviceas Selector and Memory” Nanoscale Res Lett, 13:252 (2018)

Sungjun Kim, Sunghun Jung, Min‐Hwi Kim, Ying‐Chen Chen, Yao‐Feng Chang, Kyung‐Chang Ryoo, Seongjae Cho, Jong‐Ho Lee, Byung‐Gook Park “Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate” Small (2018)

Ying-Chen Chen, Yao-Feng Chang, Xiaohan Wu, Fei Zhou, MeiqiGuo, Chih-Yang Lin, Cheng-Chih Hsieh, Burt Fowler, Ting-Chang Chang, and Jack C. Lee, “Dynamic Conductance Characteristics in HfOx-based Resistive Random-Access Memory" RSC Advances (2017)

Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park, “Ultralow power switching in silicon-rich SiNy/SiNx double-layer resistive memory device" Physical Chemistry Chemical Physics (2017)

M. Q. Guo, Y. C. Chen, C. Y. Lin, Y. F. Chang, B. Fowler, Q. Q. Li, J. Lee, and Y. G. Zhao "Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices" Applied Physics Letters 110, 23 (2017)

Yao-Feng Chang, Fei Zhou, Burt W. Fowler, Ying-Chen Chen, Cheng-Chih Hsieh, Lauren Guckert, Earl E. Swartzlander, Jack C. Lee, "Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications" IEEE Transactions on Electron Devices (2017) 

Chih-Yang Lin, Po-Hsun Chen, Ting-Chang Chang, Kuan-Chang Chang, Shengdong Zhang, Tsung-Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu-Ting Su, Yi-Ting Tseng, Yao-Feng Chang, Ying-Chen Chen, Huichun Huang, Simon M Sze, "Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with Vanadium Electrode" Nanoscale (2017)

Yao-Feng Chang, Burt Fowler, Ying-Chen Chen and Jack C. Lee, “Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy” Progress in Solid State Chemistry, 1-11 (2016)

Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Fei Zhou, Chih-Hung Pan, Ting-Chang Chang and Jack C. Lee, “Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide," Scientific Reports (2016)

Yao-Feng Chang, Burt Fowler, Fei Zhou, Ying-Chen Chen, Jack C. Lee, “Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory" Applied Physics Letters, (2016)

Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Fei Zhou, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Simon M. Sze, and Jack C. Lee, "A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-based Resistive Switching Memory" Nano Devices and Sensors (2016)

Shixuan Yang, Ying-Chen Chen, Luke Nicolini, Praveenkumar Pasupathy, Jacob Sacks, Becky Su, Russell Yang, Daniel Sanchez, Yao-Feng Chang, Pulin Wang, David Schnyer, Dean Neikirk, Nanshu Lu, “Cut-and-Paste” Manufacture of Multiparametric Epidermal Sensor Systems (ESS)" Advanced Materials, (2015)

Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou1 and Jack C. Lee, "Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing,” J. Appl. Phys. 116, 043709 (2014)

Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou and Jack C. Lee, “Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization" J. Appl. Phys. 116, 043708 (2014)  

Li Ji, Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Ting-Chang Chang, Simon M. Sze, Edward T. Yu and Jack C. Lee, “Integrated One Diode – One Resistor Architecture in Nano-Pillar SiOx Resistive Switching Memory by Nano Sphere Lithography” Nano Letters, 14 (2), pp 813–818 (2013)