2D semiconductors such as atomically thin layers of transition metal dichalcogenides have great potential for applications in field-effect transistors (FETs), owing to the atomically thin bodies. We aim to realize high-performance operations of 2D semiconductor-based FETs by surface and interface engineering.

Phase change materials show abrupt and ultrafast resistance changes due to phase transitions and are expected to be bases of low-power consumption devices. We aim to control the transition of a phase change material in the field effect geometry for memory applications.

In the conventional archtechtures, FETs surffer from the Boltzmann limit (the 60 mV/dec. limit in other words). We integrate a phase change material into 2D semiconductors to overcome the bottleneck in FETs and realize steep-slope devices.

2D materials can be ubiquitous substrates for materials growth, owing to the van der Waals nature of the surfaces. We are interested in growth of a variety of functional oxides on 2D materials for novel device applications.

2D materials show intriguing electronic and optical properties in response to external mechanical stress. Our focus is to experimentally and theoretically understand mechanical properties of 2D materials for strain-engineering the properties and device applications.