Publications

28. Step-Like Resistance Changes in VO2 Thin Films Grown on Hexagonal Boron Nitride with in situ Optically Observable Metallic Domains

S. Genchi, M. Yamamoto, T. Iwasaki, S. Nakaharai, K. Watanabe, T. Taniguchi, Y. Wakayama, H. Tanaka

Applied Physics Letters, 120, 053104 (2022)

27. Electrostatic Potential Measurement at the Pt/TiO2 Interface Using Electron Holography

H. Nakajima, T. Tanigaki, T. Toriyama, M. Yamamoto, H. Tanaka, Y. Murakami

Journal of Applied Physics, 129, 174304 (2021)

26. Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides

M. Yamamoto, R. Nouchi, T. Kanki, S. Nakaharai, A. N. Hattori, K. Watanabe, T. Taniguchi, Y. Wakayama, K. Ueno, H. Tanaka

ACS applied materials & interfaces, 11, 36871-36879 (2019)

25. Broad Range Thickness Identification of Hexagonal Boron Nitride by Colors

Y. Anzai, M. Yamamoto, S. Genchi, K. Watanabe, T. Taniguchi, S. Ichikawa, Y. Fujiwara, H. Tanaka

Applied Physics Express, 12, 055007 (2019)

24. Growth of Vanadium Dioxide Thin Films on Hexagonal Boron Nitride Flakes as Transferrable Substrates

S. Genchi, M. Yamamoto, K. Shigematsu, S. Aritomi, R. Nouchi, T. Kanki, K. Watanabe, T. Taniguchi, Y. Murakami, H. Tanaka

Scientific Reports, 9, 2857 (2019)

23. Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor

M. Yamamoto, R. Nouchi, T. Kanki, A. N. Hattori, K. Watanabe, T. Taniguchi, K. Ueno, H. Tanaka

ACS applied materials & interfaces, 11, 3224-3230 (2019)

22. Correlation between Ni Valence and Resistance Modulation on a SmNiO3 Chemical Transistor

D. Kawamoto, A. N. Hattori, M. Yamamoto, X. L. Tan, K. Hattori, H. Daimon, H. Tanaka

ACS Applied Electronic Materials, 1, 82-87 (2018)

21. Layer-by-Layer Oxidation Induced Electronic Properties in Transition-Metal Dichalcogenides

S. R. Das, K. Wakabayashi, M. Yamamoto, K. Tsukagoshi, S. Dutta

The Journal of Physical Chemistry C, 122, 17001-17007 (2018)

20. Pronounced Photogating Effect in Atomically Thin WSe2 with a Self-Limiting Surface Oxide Layer

M. Yamamoto, K. Ueno, K. Tsukagoshi

Applied Physics Letters, 112, 181902 (2018)

19. Virtual Substrate Method for Nanomaterials Characterization

B. Da, J. Liu, M. Yamamoto, Y. Ueda, K. Watanabe, N. T. Cuong, S. Li, K. Tsukagoshi, H. Yoshikawa, H. Iwai, S. Tanuma, H. Guo,

Z. Gao, X. Sun, Z. Ding

Nature Communications, 8, 15629 (2017)

18. Measuring the Complex Optical Conductivity of Graphene by Fabry-Pérot Reflectance Spectroscopy

B. G. Ghamsari, J. Tosado, M. Yamamoto, M. S. Fuhrer, S. M Anlage

Scientific Reports, 6, 34166 (2016)

17. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

S. Nakaharai, M. Yamamoto, K. Ueno, K. Tsukagoshi

ACS applied materials & interfaces, 8, 14732-17439 (2016)

16. Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

M. Yamamoto, S. Nakaharai, K. Ueno, K. Tsukagoshi

Nano Letters, 16, 2720-2727 (2016)

15. Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

Y.‐Fu Lin, Y. Xu, C. ‐Y. Lin, Y. ‐W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, K. Tsukagoshi

Advanced Materials, 27, 6612-6619 (2015)

14. Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

S. Nakaharai, M. Yamamoto, K. Ueno, Y. -F. Lin, S. -L. Li, K. Tsukagoshi

ACS Nano, 9, 5976-5983 (2015)

13. Double Resonance Raman Modes in Monolayer and Few-Layer MoTe2

H. Guo, T. Yang, M. Yamamoto, L. Zhou, R. Ishikawa, K. Ueno, K. Tsukagoshi, Z. Zhang, M. S. Dresselhaus, R. Saito

Physical Review B, 91, 205415 (2015)

12. Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2

M. Yamamoto, S. Dutta, S. Aikawa, S. Nakaharai, K. Wakabayashi, M. S. Fuhrer, K. Ueno, K. Tsukagoshi

Nano Letters, 15, 2067-2073 (2015)

11. Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers

S. Li, K. Komatsu, S. Nakaharai, Y. -F. Lin, M. Yamamoto, X. Duan, K. Tsukagoshi

ACS Nano, 8, 12836-12842 (2014)

10. Spin Injection and Detection in a Graphene Lateral Spin Valve Using an Yttrium-Oxide Tunneling Barrier

K. Komatsu, S. Kasai, S. Li, S. Nakaharai, N. Mitoma, M. Yamamoto, K. Tsukagoshi

Applied Physics Express, 7, 085101 (2014)

9. Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

Y. ‐F. Lin, Y. Xu, S. ‐T. Wang, S. ‐L. Li, M. Yamamoto, A. Aparecido‐Ferreira, W. Li, H. Sun, S. Nakaharai, W. ‐B. Jian,

K. Ueno, K. Tsukagoshi

Advanced Materials, 26, 3263-3269 (2014)

8. Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

M. Yamamoto, S. T. Wang, M. Ni, Y. -F. Lin, S. -L. Li, S. Aikawa, W. -B. Jian, K. Ueno, K. Wakabayashi, K. Tsukagoshi

ACS Nano, 8, 3895-3903 (2014)

7. Anisotropic Etching of Atomically Thin MoS2

M. Yamamoto, T. L. Einstein, M. S. Fuhrer, W. G. Cullen

The Journal of Physical Chemistry C, 117, 25643-25649 (2013)

6. “The Princess and the Pea” at the Nanoscale: Wrinkling and Delamination of Graphene on Nanoparticles

M. Yamamoto, O. Pierre-Louis, J. Huang, M. S. Fuhrer, T. L. Einstein, W. G. Cullen

Physical Review X, 2, 041018 (2012)

5. Charge Inhomogeneity Determines Oxidative Reactivity of Graphene on Substrates

M. Yamamoto, T. L. Einstein, M. S. Fuhrer, W. G. Cullen

ACS Nano, 6, 8335-8341 (2012)

4. Modeling Noncontact Atomic Force Microscopy Resolution on Corrugated Surfaces

K. M. Burson, M. Yamamoto, W. G. Cullen

Beilstein Journal of Nanotechnology, 3, 230-237 (2012)

3. High-Fidelity Conformation of Graphene to Topographic Features

W. G. Cullen, M. Yamamoto, K. M. Burson, J. Chen, C. Jang, L. Li, M. S. Fuhrer, E. D. Williams

Physical Review Letters, 105, 215504 (2010)

2. Anomalous Decay of Multilayer Holes on SrTiO3(001)

M. Yamamoto, K. Sudoh, H. Iwasaki, E. D. Williams

Physical Review B, 82, 115436 (2010)

1. Decay of Multilayer Holes on SrTiO3(001)

M. Yamamoto, K. Sudoh, H. Iwasaki

Surface Science, 601, 1255-1258 (2007)