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SOED Lab focuses on semiconductor optoelectronic materials, energy conversion devices, sensing semiconductor materials, and thin-film device integration. Our research follows a materials–processes–devices–applications framework, integrating thin-film deposition, micro/nanostructure engineering, optoelectronic characterization, material analysis, and device-level performance evaluation for next-generation optoelectronic, energy, and sensing applications.
SOED Lab 聚焦於半導體光電材料、能源轉換元件、感測半導體材料與薄膜製程整合技術。本實驗室以「材料—製程—元件—應用」為核心研究架構，結合薄膜沉積、微奈米結構設計、光電量測、材料分析與元件性能驗證，發展具高效率、高穩定性與實際應用潛力的次世代光電、能源與感測元件。
Perovskite thin films, quantum-dot composites, and interface-engineered LEDs for efficient and tunable light emission.
發展鈣鈦礦薄膜、量子點複合材料與界面工程，應用於高效率可調發光元件。
Interface passivation and transport-layer engineering for efficient and stable perovskite solar cells.
透過界面鈍化與傳輸層調控，提升鈣鈦礦太陽能電池效率與穩定性。
Spectral conversion and photon-management strategies for improving solar-cell light utilization and photovoltaic performance.
以光譜轉換與光管理技術提升太陽能電池之光利用率與光電轉換表現。
Pixel engineering, light extraction, and device processing for LED, micro-LED, and display applications.
發展 LED、micro-LED 與顯示相關元件之像素設計、光取出與製程技術。
Wide-bandgap oxide semiconductor devices and functional sensing platforms for electronics and environmental monitoring.
發展寬能隙氧化物半導體元件與感測平台，應用於電子元件與環境監測。
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