1. A. Kobayashi, S. Kihara, T. Akiyama, T. Kawamura, T. Maeda, K. Ueno, H. Fujioka,
   "Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN",
   ACS Applied Electronic Materials 5, 240 (2023). 

2. J. Casamento, K. Nomoto, T-S Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, A. Lal, J. Hwang, G. Xing, D. Jena,
   "FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors",
   IEDM Technical Digest 11.1.1-11.1.4 (2022).

3. T. Maeda, R. Page, K. Nomoto, M. Toita, H. G. Xing and D. Jena,
   "AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer",
   Applied Physics Express 15, 061007 (2022).

4. J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto, L. van Deurzen, W. Turner, P. Fay, S. Mu, C. G. Van de Walle, A. Lal, H. G. Xing and D. Jena,
   "Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties",
   Applied Physics Letters 120, 152901 (2022).

5. T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
   "Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes with Various Doping Concentrations",
   IEEE Electron Device Letters 43(1), 96-99 (2022).

6. T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
   "Impact Ionization Coefficients and Critical Electric Field in GaN",
   Journal of Applied Physics 129, 185702 (2021).

7. J. Casamento, H. Lee, C. S. Chang, M. F. Besser, T. Maeda, D. A. Muller, H. G. Xing and D. Jena,
   "Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScAlN/GaN heterostructure",
   APL Materials 9, 091106 (2021). 

8. K. Nomoto, R. Chaudhuri, S. J. Bader, L. Li, A. Hickman, S. Huang, H. Lee, T. Maeda, H. W. Then, M. Radosavljevic, P. Fischer, A. Molnar, J. C. M. Hwang, H. G. Xing and D. Jena,
   "GaN/AlN p-channel HFETs with Imax > 420 mA/mm and ~20 GHz fT/fMAX",
   IEDM Technical Digest, 8.3.1-8.3.4 (2020). 

9. T. Maeda, M. Okigawa, Y. Kato, I. Takahashi and T. Shinohe,
   "Defect-insensitive current-voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition",
   AIP Advances 10, 125119 (2020). 

10. D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto,
    "Experimental Determination of Impact Ionization Coefficients Along <11-20> in 4H-SiC",
    IEEE Transaction on Electron Devices 67 (9), 3740-3744 (2020).

11. M. Hara, S. Asada, T. Maeda and T. Kimoto,
    “Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces”,
    Applied Physics Express 13, 041001 (2020).

12. T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ junction”,
    IEDM Technical Digest, 4.2.1-4.2.4 (2019).

13. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination”,
    Applied Physics Letters 115, 142101 (2019).
    [featured as APL Editor’s Pick]

14. T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto,
    “Franz-Keldysh effect in 4H-SiC p-n junction diode under high electric field along the <11-20> direction”,
    Japanese Journal of Applied Physics 58, 091007 (2019).

15. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
    Proceedings of the 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 59-62 (2019).

16. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Design and Fabrication of GaN p-n Junction Diodes with Negative Beveled-Mesa Termination”,
    IEEE Electron Device Letters 40(6), 941-944 (2019).

17. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from Recombination Current in GaN p-n+ Junction Diodes”,
    Japanese Journal of Applied Physics 58, SCCB14 (2019).
    [selected as IWN2018 top 40 articles , OPEN ACCESS]

18. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination”,
    IEDM Technical Digest, 30.1.1-30.1.4 (2018).

19. T. Maeda, X. Chi, M. Horita, J. Suda and T. Kimoto,
    “Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage”,
    Applied Physics Express 11, 091302 (2018).

20. T. Maeda, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage”,
    Applied Physics Letters 112, 252104, (2018).

21. T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita and J. Suda,
    “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode”,
    Applied Physics Express 10, 051002, (2017).
    [JSAP Outstanding Young Researcher Paper Award]

22. T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, M. Horita and J. Suda,
    “Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”,
    Applied Physics Express 9, 091002, (2016).
    [featured as APEX spotlights2016]

1. 2023/04    Japan Society for Promotion of Science (JSPS), Grant-in-Aid for Young Researchers

2. 2023/02     Suzuki Foundation, Research Grant for Young Researchers 2022

3. 2023/01　The Precise Measurement Technology Promotion Foundation, Research Grant

4. 2022/12　The 14th Casio Science Research Foundation, Research Grant

5. 2022/10　Japan Science and Technology (JST) ACT-X, JPMJAX22KH

6. 2022/10　Japan Society for Promotion of Science (JSPS), Grant-in-Aid for Research Activity Start-up, 22K20423

7. 2022/10　TEPCO Memorial Foundation, travel and participant grants for overseas conferences (IWN 2022)

8. 2020/11　2020 Kavli Institute at Cornell (KIC) Instrumentation Grants

9. 2020/07　Kavli Institute at Cornell for nanoscale science, Postdoctoral Research Fellowship

10. 2020/07　Japan Society for Promotion of Science, Overseas Research Fellowship

11. 2020/04　Japan Society for Promotion of Science, Research Fellowship (PD)

12. 2019/12　Marubun Research Promotion Foundation, travel and participant grants for overseas conferences (IEDM 2019)

13. 2019/07　Kyoto University Foundation, travel and participant grants for overseas conferences (ICNS 2019)

14. 2018/10　Optical and Electronic Science and Engineering, Global COE Research Grant for Graduate Students

15. 2018/06　Murata Science Foundation, travel and participant grants for overseas conferences (EMC 2018)

16. 2018/04　Japan Society for Promotion of Science, Research Fellowship (DC1)

1. 2023/02 The 39th Inoue Research Award for Young Scientist 

2. 2021/06 Attending The 70th Lindau Nobel Laureates Meetings, (JSAP HP) 

3. 2020/07　Kavli Institute at Cornell for nanoscale science, Postdoctoral Research Fellow

4. 2020/07　Japan Society for Promotion of Science, Overseas Research Fellow

5. 2020/04　Japan Society for Promotion of Science, Research Fellow (PD)

6. 2020/03　Kyoto University President Award 

7. 2020/02　The 18th IEEE EDS Japan Joint Chapter Student Award (IEDM)

8. 2019/08　The 41st (2019) Japan Society of Applied Physics Outstanding Young Researcher Paper Award

9. 2019/05　ISPSD2019 Charitat Award

10. 2019/03　Japan Society for Promotion of Science, HOPE Fellow

11. 2019/01　The 17th IEEE EDS Japan Joint Chapter Student Award (IEDM)

12. 2018/11　IWN2018 Student Award

13. 2018/04　Japan Society for Promotion of Science, Research Fellow (DC1)

14. 2018/03　The 43rd (2017, fall) Japan Society of Applied Physics Best Presentation Award

15. 2017/11　The 36th Electronic Material Symposium, EMS Award

16. 2017/06　Hiroshi Harashima Young Researcher Award

17. 2016/05　The 8th Conference on Crystal Growth of Nitride Semiconductors, Presentation Award 

18. 2015/11　The Institute of Electronics, Information and Communication Engineers (IEICE), Electron Devices Meeting, Best Presentation Award

19. 2015/08　The 4th Tsukuba Innovation Arena (TIA) Power Electronics Summer School, Young Researcher Award

Reviewer Experiences

Applied Physics Letters, Applied Physics Express, IEEE Electron Device Letters, IEEE Transaction on Electron Devices, AIP Advances, Physica Status Solidi (a), etc.

Conference Committee Member

・The 14th International Conference on Nitride Semiconductors (ICNS 14)

1. T. Maeda,
   "ScAlN as a Material to Boost Next-Generation High Frequency GaN-based FETs",
   15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2023),
   Gifu (Japan), March 2023. Oral. [Invited]

2. J. Casamento, K. Nomoto, T-S Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, A. Lal, J. Hwang, G. Xing, D. Jena,
   "FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors",
   The 68th International Electron Devices Meeting (IEDM2022), San Francisco (USA) + online, December. 2022. 11.1. Oral.

3. T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
   “Temperature dependence of impact ionization coefficients in GaN”,
   International Workshop on Nitride Semiconductors 2022 (IWN 2022), Berlin (Germany), October 2022. AT235. Oral.

4. J. Casamento, H. Lee, V. Gund, T. Maeda, K. Nomoto, S. Mu, W. Turner, L. van Deurzen, Y.-T. Shao, T.-S. Nguyen, B. Daveji, M. J. Asadi, J. Wright,
   P. Fay, C. G. Van de Walle, A. Lal, D. A. Muller, H. G. Xing, D. Jena,
   "Promising Physical Phenomena in Epitaxial Al1-xScxN - Enhanced Dielectric and Ferroelectric Behavior",
   International Workshop on Nitride Semiconductors 2022 (IWN 2022), Berlin (Germany), October 2022. AT196, Oral.

5. K. Nomoto, T. S. Nguyen, J.  Casamento,  L. Li, A. Hickman, H. Lee, C. P. Savant, T. Maeda, H. G. Xing and D. Jena,
   "MBE Grown AlScN/AlN/GaN High Electron Mobility Transistors with Regrown Contact",
   The 14th Topical  Workshop on Heterostructure Microelectronics, Hiroshima (Japan), August 2022, Upgraded Oral.

6. T. Maeda, R. Page, K. Nomoto, M. Toita, H. G. Xing and D. Jena,
   "Temperature Dependence of Current-Voltage Characteristics of AlN Schottky barrier diode fabricated on AlN bulk substrate",
   Compound Semiconductor Week 2022 (CSW 2022), University of Michigan (USA), June 2022, Oral.

7. J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto, L. van Deurzen, W. Turner, P. Fay, S. Mu, C. G. Van de, Walle, A. Lal, H. G. Xing and D. Jena,
   "Epitaxial ScxAl1−xN on GaN exhibits attractive High-K Dielectric Properties",
   Compound Semiconductor Week 2022 (CSW 2022), University of Michigan (USA), June 2022, Oral.

8. T. Maeda,
   "Can we make AlN vertical devices?",
   Workshop On Compound SEMiconductor Materials And Devices 2022 (WOCSEMMAD 2022), Florida (USA), February 2022, Oral.

9. T. Maeda, R. Page, K. Nomoto, H. G. Xing and D. Jena,
   "AlN quasi-vertical Schottky barrier diode fabricated on AlN bulk substrate",
   The Lester Eastman Conference 2021 (LEC 2021), University of Notre Dame (USA) + online, August. 2021, Oral.

10. R. Page, K. Lee, C. Gerlach, L. van Deuzen, R. Chaudhuri, T. Maeda, Y. Cho, H. G. Xing and D. Jena,
    "MBE growth and transport properties of ultrawide bandgap AlGaN on AlN bulk substrate",
    The 63rd Electronic Materials Conference (EMC63), virtual (online), June. 2021, Oral.

11. H. Lee, B. Davaji, T. Maeda, V. Gund, J. Casamento, K. Nomoto, X. Li, Z. Zhang, A. Lal, D. Jena and H. G. Xing,
    "Design Considerations for ScAlN/AlGaN/GaN Ferroelectric HEMTs",
    Compound Semiconductor Week 2021 (CSW 2021), virtual (online), May. 2021, Oral.

12. T. Maeda, J. Casamento, K. Nomoto, H. G. Xing and D. Jena,
    "Capacitance and Transport Properties of GaN/ScAlN/GaN Heterostructure Barrier Diode",
    The 51st IEEE Semiconductor Interface Specialists Conference (SISC2020), virtual (online), December. 2020. 8.2. Oral.

13. K. Nomoto, R. Chaudhuri, S. J. Bader, L. Li, A. Hickman, S. Huang, H. Lee, T. Maeda, H. W. Then, M. Radosavljevic, P. Fischer, A. Molnar, J. C. M. Hwang, H. G. Xing and D. Jena,
    "GaN/AlN p-channel HFETs with Imax > 420 mA/mm and ~20 GHz fT/fMAX",
    The 66th International Electron Devices Meeting (IEDM2020), virtual (online), December. 2020. 8.3. Oral.

14. T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ junction”,
    The 65th International Electron Devices Meeting (IEDM2019), San Francisco (USA), December. 2019. 4.2. Oral.
    [The 18th IEEE EDS Japan Joint Chapter Student Award]

15. D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto,
    “Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations”,
    The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, (Japan), November. 2019. ThP-ED-14. Poster.

16. M. Hara, S. Asada, T. Maeda and T. Kimoto,
    “Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces”,
    The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, (Japan), November. 2019. ED3-4. Oral.

17. T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto,
    “Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction”,
    The 18th International Conference on Silicon Carbide and Related Materials (ICSCRM2019), Kyoto, (Japan), October. 2019. We-3B-07. Oral.

18. D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto,
    “Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction”,
    The 18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019), Kyoto, (Japan), October. 2019. We-3A-01. Oral.

19. M. Hara, S. Asada, T. Maeda and T. Kimoto,
    “Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes”,
    The 18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019), Kyoto, (Japan), October. 2019. We-3A-02. Oral.

20. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers”,
    The 51st International Conference on Solid-State Devices and Materials (SSDM2019), Nagoya, (Japan), September. 2019. K-1-05. Oral.

21. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Estimation of Impact Ionization Coefficient in GaN and its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
    The 13th International Conference on Nitride Semiconductors (ICNS13), Bellevue (USA), July. 2019. B04-07. Oral.

22. T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, T. Maeda, M. Horita, M. Kanechika, H. Ueda, T. Kachi and J. Suda,
    “Growth of P-Type GaN Layers with Low Mg Concentrations by Using MOVPE and the Application to Vertical Power Devices”,
    The 13th International Conference on Nitride Semiconductors (ICNS13), Bellevue (USA), July. 2019. G05.01. Oral. [Invited]

23. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
    The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD2019),Shanghai (China), May. 2019. B1L-A-1. Oral.
    [ISPSD2019 Charitat Award]

24. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination”,
    The 64th International Electron Devices Meeting (IEDM2018), San Francisco (USA), December. 2018. 30.1. Oral.
    [The 17th IEEE EDS Japan Joint Chapter Student Award]

25. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes”,
    International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa (Japan), November. 2018. CR10-5. Oral.

26. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Temperature Dependence of Avalanche Multiplication in GaN PN Junction Diodes Measured by Light Absorption Due to Franz-Keldysh Effect”,
    International Workshop on Nitride Semiconductors 2018 (IWN2018), Kanazawa (Japan), November. 2018. ED6-3. Oral.
    [IWN2018 Student Award]

27. T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-Bandgap Light Absorption Due to Franz-Keldysh Effect”,
    The 50th International Conference on Solid-State Devices and Materials (SSDM2018), Tokyo, (Japan), September. 2018. D-7-02. Oral.

28. T. Maeda, X. Chi, M. Horita, J. Suda and T. Kimoto,
    “Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage”,
    The 12th European Conference on Silicon Carbide & Related Materials (ECSCRM2018), Birmingham, (UK), September. 2018. TU.02b.01. Oral.

29. T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, and J. Suda,
    “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements”,
    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2018),
    Fukuoka, (Japan), July. 2018. A7-3. Oral

30. T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage”,
    The 60th Electronic Materials Conference (EMC60),Santa Barbara, (USA), June. 2018. B03. Oral.

31. T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita and J. Suda,
    “Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements”,
    The 12th International Conference on Nitride Semiconductors (ICNS12),Strasbourg, (France), July. 2017. C10.6. Oral.

32. T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, M. Horita and J. Suda,
    “Photocurrent induced by sub-bandgap wavelength light absorption due to Franz-Keldysh effect in n-type GaN Schottky barrier diode under large reverse bias”,
    International Workshop on Nitride Semiconductors 2016 (IWN2016),Florida, (USA), October. 2016. D1.7.05. Oral.