Contact Info

Room 125, Eng. Building 3, 7-3-1, Hongo, Bunkyo-ku, Tokyo, Japan, 113-8656

The University of Tokyo 

(東京大学 本郷キャンパス 工学部3号館125室, in Japanese)

e-mail: tmaeda"at"g.ecc.u-tokyo.ac.jp

Links: Google Scholar, ORCID, LinkedIn, Researchmap

Brief Bio and CV

Education

Bachelor degree: Faculty of Electric and Electronic Engineering, Kyoto University, Japan (March, 2016)

Master degree: Department of Electronic Science and Engineering, Kyoto University, Japan (March, 2018)

PhD degree: Department of Electronic Science and Engineering, Kyoto University, Japan (March, 2020) 

(PhD Dissertation Title: "Study on Avalanche Breakdown in GaN", PDF)


Carrier History

From April 2018 to March 2020 - JSPS Research Fellow DC1 (Kyoto University, Japan)

From April 2020 to June 2020 - JSPS Research Fellow PD (Kyoto University, Japan)

From July 2020 to March 2022 - KIC Postdoctoral Research Fellow / JSPS Overseas Research Fellow (Cornell University, USA)

From April 2022 to September 2023 - Assistant Professor, The University of Tokyo, Japan

From  October 2023 (currently)- Junior Associate Professor (Lecture), The University of Tokyo, Japan


Brief Biography

Dr. Takuya Maeda is a Junior Associate Professor (Lecture, 講師) in Dept. of Electrical Engineering and Information Systems (EEIS), The University of Tokyo, Japan. His group is studying wide-bandgap semiconductor electronic devices toward next-generation high power and high frequency electronics. Especially, he likes device physics and material science; characterization of physical properties of material, device simulation/demonstration.

He received his PhD degree in March of 2020 from Dept. of Electronic Science and Engineering, Kyoto University, Kyoto, Japan, as a fast track skipping one year, under the supervisions of Prof. Tsunenobu Kimoto and Prof. Jun Suda. 

In his PhD, he studied on avalanche breakdown in GaN: he proposed the novel measurement method of avalanche multiplication in reverse-biased p-n junction utilizing unique optical absorption (Franz-Keldysh effect), and unraveled the impact ionization coefficients, which is one of the most important physical properties to determine the breakdown characteristics. He received prestigious awards such as Kyoto University President Award, ISPSD2019 Charitat Award, IEEE EDS Japan Joint Chapter Student Awards (IEDM2018, IEDM2019), IWN2018 Student Award, JSAP Outstanding Young Researcher Paper Award, JSAP Best Presentation Award, etc. 

After his PhD, he worked in Kyoto University as a Japan Society for the Promotion of the Science (JSPS) research fellow PD from 2020/04-2020/07, and he joined Cornell University (USA), Prof. Debdeep Jena and Prof. Huili Grace Xing Laboratory, as Kavli Institute at Cornell (KIC) postdoctoral research fellow and Japan Society of Promotion for Science (JSPS) overseas research fellow from 2020/07-2022/03. He studied ultrawide-bandgap (UWBG) semiconductor Aluminum Nitride (AlN) and ferroelectric Scandium Aluminum Nitride (ScAlN) toward future electronics application.   

He has published 22 peer-reviewed papers (15 first-author papers) and presented 32 peer-reviewed international conferences (20 first-author presentations).