Recent Updates

(1) My co-authored paper describing impact ionization coefficients for electric field along the <11-20> direction in 4H-SiC has been published in IEEE Trans. Electron Devices 2020!
I contributed to propose the measurement method, measurement and analysis of the photocurrent in 4H-SiC p-n junction photodiodes.

(2) My 12th 1st author paper which describes defect-insensitive current transport in alpha-gallium oxide Schottky barrier diodes has been published in AIP Advances 2020!
This work is collaborated with startup company FLOSFIA in Japan.

(3) I have presented in IEEE SISC 2020 about the electrical characterization of GaN/ScAlN/GaN heterostructure barrier diodes. This is my first presentation in Cornell University!