Publications

Explore the research outcomes of TAIS Lab.

A collection of journal papers, conference presentations, and patents from our ongoing work.

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Selected Publications († equal contribution, * corresponding author)

J. Kim†, E. C. Park†, W. Shin†, R.-H. Koo, C.-H. Han, H. Y. Kang, T. G. Yang, Y. Goh, K. Lee, D. Ha, S. S. Cheema*, J. K. Jeong*, D. Kwon*, "Analog Reservoir Computing via Ferroelectric Mixed Phase Boundary Transistors," Nature Communications, 15(1), 9147 (2024). [Editor’s Highlight & Featured Article]
M. Song†, R.-H. Koo†, J. Kim†*, C.-H. Han, J. Yim, J. Ko, S. Yoo, D.-H. Choe, S. Kim, W. Shin, D. Kwon*, "Ferroelectric NAND for Efficient Hardware Bayesian Neural Networks," Nature Communications, 16(1), 6879 (2025).
J. Kim†, E. C. Park†, W. Shin†, R.-H. Koo†, J. Im, C.-H. Han, J.-H. Lee, D. Kwon*, "All-Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons," Advanced Science, 11(44), 2407870 (2024).
J. Kim, J. Im, W. Shin, S. Lee, S. Oh, D. Kwon, G. Jung, W. Y. Choi, J.-H. Lee*, "Demonstration of In-Memory Biosignal Analysis: Novel High-Density and Low-Power 3D Flash Memory Array for Arrhythmia Detection," Advanced Science, 11(26), 2308460 (2024).
R.-H. Koo†, C. Han†, J. Yim, J. Im, Y. Cho, J.-H. Lee, S. S. Cheema, J. Kim*, W. Shin*, D. Kwon*, "Physical Reservoir Computing System via Hybrid Ferroelectric-Ionic Transistors," Advanced Materials, Accepted.
E. C. Park†, J. Kim†*, J. Ko†, W. Shin†, M.-C. Nguyen, M. Song, K.-R. Kwon, R.-H. Koo, D. Kwon*, "Hafnia-based Ferroelectric Computer Vision System with Artificial Synaptic Array," Nano Energy, 139, 110877 (2025).
J. Kim†, J. Im†, J. Ko, S. Lee, D. Kwon, W. Shin, J. Hwang, R.-H. Koo, W. Y. Choi, J.-H. Lee*, "First Demonstration of Innovative 3D AND-Type Fully-Parallel Convolution Block with Ultra-High Area-and Energy-Efficiency," 2023 IEEE International Electron Devices Meeting (IEDM), IEEE, 1-4 (2023). [Semiconductor Device Top Conference]
J. Kim†, J. Im†, J.-H. Lee*, "Performance Optimization in 3D Flash Memory Cell Stack via Process Variable Engineering," IEEE Electron Device Letters, 45(12), 2395-2398 (2024). [Editors’ Pick]