1. Hypervalency in amorphous chalcogenides
T. H. Lee§ and S. R. Elliott§
Nature Communications 13, 1458 (2022) [Link]
2. Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
S. Jung*§, T. H. Lee*, S. Y. Bang*, S. D. Han, D. Shin, S. Lee, H. W. Choi, Y. Suh, X. Fan, J. Jo, S. Zhan, J. Yang, C. Samarakoon, Y. Kim, L. Occhipinti, G. Amaratunga, J. M. Kim§
npj Computational Materials 7, 1 (2021) [Link]
3. Chemical bonding in chalcogenides: the concept of multi-centre hyperbonding
T. H. Lee§ and S. R. Elliott§
Advanced Materials 32, 2000340 (2020) [Link]
4. The relation between chemical bonding and ultrafast crystal growth
T. H. Lee§ and S. R. Elliott§
Advanced Materials 29, 1700814 (2017) [Link]
5. Microscopic mechanism of doping-induced kinetically-constrained crystallization in phase-change materials
T. H. Lee§, D. Loke, and S. R. Elliott§
Advanced Materials 27, 5477 (2015) [Link]
6. Tailoring transient-amorphous states: Towards fast and power-efficient phase-change memories and neuromorphic applications
T. H. Lee*, D. Loke*, K. J. Huang, W. J. Wang§, and S. R. Elliott§
Advanced Materials 26, 7493 (2014) [Link]
7. Breaking the speed limits of phase-change memory
D. Loke*, T. H. Lee*, W. J. Wang, L. P. Shi§, R. Zhao, Y. C. Yeo, T. C. Chong§, and S. R. Elliott§
Science 336, 1566 (2012) [Link]
8. Ab initio computer simulation of the early stages of crystallization: Application to Ge2Sb2Te5 phase-change materials
T. H. Lee and S. R. Elliott
Physical Review Letters 107, 145702 (2011) [Link]
2024
Bonding in tellurides
T. H. Lee and S. R. Elliott
Proc. Natl. Acad. Sci. U.S.A. 121, e2403308121 (2024) [Letter] [Link]
Understanding switching mechanism of selector-only memory using Se-based Ovonic threshold switch device
J. Lee, Y. Seo, S. Ban, D. G. Kim, Y. B. Park, T. H. Lee, and H. Hwang
IEEE Transactions on Electron Devices 71, 3351 (2024) [Link]
Toward memristive phase-change neural network with high-quality ultra-effective highly-sefl-adjustable online learning
K.-G. Lim, S.-X. Go, C.-C. Tan, Y. Jiang, K. Cai, T.-C. Chong, S. R. Elliott, T. H. Lee, and D. K. Loke§
Advanced Physics Research 3, 2300085 (2024) [Link]
Nonvolatile memristive materials and physical modeling for in-memory and in-sensor computing
S.-X. Go, K.-G. Lim, T. H. Lee, and D. K. Loke§
Small Science 4, 2300139 (2024) [Link]
2023
Defect engineering of BTe ovonic threshold switch (OTS) with nitrogen doping for improved electrical and reliability performance
J. Lee, S. Ban, T. H. Lee, and H. Hwang§
IEEE Electron Device Lett. 44, 1468 (2023) [Link]
Truly form-factor-free industrially scalable system integration for electronic textile architectures with multifunctional fiber devices
S. Lee, H. W. Choi, C. L. Figueiredo, D.-W. Shin, F. M. Moncunill, K. Ullrich, S. Sinopoli, P. Jovancic, J. Yang, H. Lee, M. Eisenreich, U. Emanuele, S. Nicotera, A. Santos, R. Igreja, A. Marrani, R. Momente, J. Gomes, S.-M. Jung, S. D. Han, S. Y. Bang, S. Zhan, W. Harden-Chaters, Y.-H. Suh, X.-B. Fan, T. H. Lee, J.-W. Jo, Y. Kim, A. Costantino, V. G. Candel, N. Duraes, S. Meyer, C.-H. Kim, M. Lucassen, A. Nejim, D. Jimenez, M. Springer, Y.-W. Lee, G.-H. An, Y. Choi, J. I. Sohn, S. Cha, M. Chhowalla, G. A. J. Amaratunga, L. G. Occhipinti, P. Barquinha, E. Fortunato, R. Martins, J. M. Kim
Science Advances 9, eadf4049 (2023) [Link]
Toward single-cell multiple-strategy processing shift register powered by phase-change memory materials
S.-X. Go, Q. Wang, K. Huang, T. H. Lee, N. Bajalovic, and D. K. Loke§
Advanced intelligent systems 5, 2200353 (2023) [Link]
2022
Ultrafast near-ideal phase-change memristive physical unclonable functions driven by amorphous state variations
S.-X. Go, Q. Wang, K. G. Lim, T. H. Lee, N. Bajalovic, and D. K. Loke§
Advanced Science 9, 2204453 (2022) [Link]
Understanding effect of distortions and vacancies in wurtzite AlScN ferroelectric memory materials: Vacancy-induced multiple defect state types and relaxation dependence in transition energy levels
Q. Wang, S.-X. Go, C. Liu, M. Li, Y, Zhu, L. Li, T. H. Lee, and D. K. Loke§
AIP Advances 12, 125303 (2022) [Link]
Experimental and theoretical investigation of the effect of Sn on κ-Ga2O3 growth
H. Y. Kang*, Y.-H Choi*, K.-J. Pyeon, T. H. Lee§, and R. B. K. Chung§
Journal of materials science 57, 19882-19891 (2022) [Link]
Computational understanding role of vacancies and distortions in wurtzite ferroelectric memory materials: implication for device miniaturization
Q. Wang, S.-X. Go, C. Liu, M. Li, Y. Zhu, L. Li, T. H. Lee, and D. K. Loke§
Materials Advances 3, 5532 (2022) [Link]
Hypervalency in amorphous chalcogenides
T. H. Lee§ and S. R. Elliott§
Nature communications 13, 1458 (2022) [Link]
Engineering core size of InP quantum dot with incipient ZnS for blue emission
Y.-H. Suh*, S. Lee*, S.-M. Jung, S. Y. Bang, J. Yang, X. Fan, S. Zhan, C. Samarakoon, J.-W. Jo, Y. Kim, H. W. Choi, L. G. Occhipinti, T. H. Lee§, D.-W. Shin§, and J. M. Kim
Advanced optical materials 10, 2102372 (2022) [Link]
Smart textile lighting/display system with multifunctional fibre devices for large scale smart home and loT applications
H. W. Choi*, D.-W. Shin*, J. Yang*, S. Lee*, C. Figueiredo, S. Sinopoli, K. Ullrich, P. Jovančić, A. Marrani, R. Momentè, J. Gomes, R. Branquinho, U. Emanuele, H. Lee, S. Y. Bang, S.-M. Jung, S. D. Han, S. Zhan, W. Harden-Chaters, Y.-H. Suh, X.-B. Fan, T. H. Lee, M. Chowdhury, Y. Choi, S. Nicotera, A. Torchia, F. M. Moncunill, V. G. Candel, N. Durães, K. Chang, S. Cho, C.-H. Kim, M. Lucassen, A. Nejim, D. Jiménez, M. Springer, Y.-W. Lee, S. Cha, J. I. Sohn, R. Igreja, K. Song, P. Barquinha, R. Martins, G. A. J. Amaratunga, L. G. Occhipinti§, M. Chhowalla§, and J. M. Kim§
Nature communications 13, 814 (2022) [Link]