Talks

Abstract: For the first time, a simultaneous wavelength and space division multiplexed transmitter is demonstrated on a heterogeneous III-V-on-silicon platform. The proof-of-concept experiment shows (de-)interleaved 2×8 comb lines each modulated at 25 Gb/s.

Abstract: We demonstrate a heterogeneously integrated optical III-V/Si MZI memristor for the purposes of non-volatile optical memory. The results indicate the possibility of implementing large scale photonics and optical neural networks with inherent memory functions.

Abstract: We compare III-V/Si MZIs and (de-)interleavers using Al2O3- and HfO2-based MOSCAP structures as phase tuners. HfO2 twice as thick as Al2O3 exhibited lower VπL. We demonstrate crosstalk improvement of ring-assisted (de-)interleavers with both structures.

Abstract: Heterogeneously integrated III-V/Si MOSCAP deinterleavers with a channel spacing of 65 GHz are demonstrated in the O-band. Nth order AMZI and ring-assisted AMZI show flattop response with improved crosstalk performance via III-V/Si MOSCAP tuning.

Abstract: We demonstrate >9× direct modulation bandwidth improvement up to 45 GHz for heterogeneous III-V/Si micro-ring lasers via optical injection locking (OIL). Co-integration of master and slave lasers on the same chip was also realized. We also demonstrate on-chip OIL without the need for external lasers, thus improving bandwidth > 4× up to 20 GHz.

Abstract: Low-loss, fabrication-tolerant Si3N4 CWDM lattice filters and AWGs are demonstrated for 990 – 1065nm bottom-emitting VCSELs. Channel separation of 25 nm, XT < -35 dB and -20 dB are reported with temperature shift of 14.5 pm/°C.