Journal

(2026)

(SCIE : 21)

131) Seoyoung Park, Hyesung Na, Jaewoo Choi, Muhammad Ismail, Chandreswar Mahata, Donghyun Ryu, Sungjoon Kim, Jung-Kyu Lee, Junsu Yu, and Sungjun Kim, “Dual-state conversion for high-entropy and reconfigurable resistive memory-based physically unclonable functions,” Journal of Materials Science & Technology, Vol. 266, pp. 38–47, 20 September, 2026.

(IF = 11.2 (2023), 14.3 (2024), 16.8 (2025))

(IF 상위 0.5% (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025))

(IF 상위 0.5%) (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024))

(IF 상위 1.7%) (2/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023))

130) Jihee Park, Nawoon Kim, Hyesung Na, Hyungjin Kim, and Sungjun Kiim, “Nonlinear quantized conductance dynamics in vertical SiN RRAM for scalable memory-learning integration,” Journal of Materials Science & Technology , Vol. 266, pp. 76–91, 20 September, 2026.

(IF = 11.2 (2023), 14.3 (2024), 16.8 (2025))

(IF 상위 0.5% (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025))

(IF 상위 0.5%) (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024))

(IF 상위 1.7%) (2/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023))

129) Jeonguk Park, Youngseo Lee, Seongmin Kim, Kyeongjun Min, Junhyeok Park, Jung-Kyu Lee, Heung Soo Kim, Deep Jariwala, and Sungjun Kim, “Tri-Layer Laminated HZO/HfO2/HZO Ferroelectric Diode for Linear Weight Updates in Hardware-Aware Reservoir Computing,” Advanced Functional Materials, Vol. 36, No. 55, e76577, 16 June, 2026.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_materialsengineering)

128) Chih-Chieh Hsu, Hung-Chun Chang, Bo-An Ko, Zheng-kai Xiao, Wun-Ciang Jhang, Chih-Ming Weng, and Sungjun Kim, “Demonstration of Strontium Oxide Resistive Memory with High OFF/ON Resistance Ratio and High Reliability Fabricated Using Sol-Gel Process,” Journal of Materials Chemistry C, July 2026.  

(IF = 5.7 (2023), 5.2 (2024), 5.1 (2025))

(IF 상위 26.4% (51/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 23.8% (45/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 19.3% (35/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

127) Chih-Chieh Hsu, Zi-Rong Qiu, Xuan-Zhi Zhang, Wun-Ciang Jhang, Tsung-Chun Hsieh, Yen-Lin Chiang, Bo-An Ko, Wen-Ling Shen, and Sungjun Kim, “Modulation of oxygen vacancy filaments and crystal structure by thermal annealing for high-performance solution-processed HfZrOx resistive memory,” Journal of Materials Chemistry C, Vol. 14, pp. 10251–10260, April 2026.

(IF = 5.7 (2023), 5.2 (2024), 5.1 (2025))

(IF 상위 26.4% (51/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 23.8% (45/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 19.3% (35/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

126) Hyeonho Lee, Seungjun Lee, Tae-Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, and Sungjun Kim, “Triple-Mode Ferroelectric Thin-Film Transistor for Hybrid Electrical-Optical Reservoir Computing,” Advanced Science, Vol. 13, Art. no. e75471, May 2026.

(IF = 14.3 (2023), 14.1 (2024), 14.1 (2025))

(IF 상위 9.4% (24/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 7% (33/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 6.5% (29/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Chemical & Material Sciencees (general) 분야 7위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_chmgeneral)

125) Seohyeon Ju, and Sungjun Kim, “RRAM-enabled reservoir computing: from interfacial switching dynamics to scalable and hybrid architectures,” Journal of Materials Chemistry C, Vol. 14, pp. 5629–5652, March 2026.

(IF = 5.7 (2023), 5.2 (2024), 5.1 (2025))

(IF 상위 26.4% (51/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 23.8% (45/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 19.3% (35/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

124) Sangwoo Jung, Hyoseob Kim, Jiseon Park, Sungjun Kim, and Min-Hwi Kim, “A generic compact model for resistive memories and switches,” Scientific Reports, Vol. 16, Art. no. 16326, April 2026.

(IF = 3.8 (2023), 3.9 (2024), 4.9 (2025))

(IF 상위 14.6% (21/140) SCIE (MULTIDISCIPLINARY SCIENCES 분야) (JCR 2025)

(IF 상위 18% (25/136) SCIE (MULTIDISCIPLINARY SCIENCES 분야) (JCR 2024)

(IF 상위 18.3% (25/134) SCIE (MULTIDISCIPLINARY SCIENCES분야) (JCR 2023)

123) Muhammad Ismail, Junhyuk Park, Maria Rasheed, Chandreswar Mahata, Hyun-Seok Kim, Heung Soo Kim, Janghyuk Moon, and Sungjun Kim, “Neuromorphic sensing and computing in a versatile thermally grown Fe–W–O–S nanocomposite memristor,” Materials Science and Engineering: R: Reports, Vol. 169, Art. no. 101206, March 2026.

(IF = 31.6 (2023), 26.8 (2024), 21.1 (2025))

(IF 상위 3.9% (8/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 2.1% (10/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 1.7% (8/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

122) Hyogeun Park, Heesung Jang, Seungman Park, Hyesung Na, and Sungjun Kim, “Photonic Encoding‐Driven Neuromorphic and Cryptographic System Based on Oxide Semiconductor Device,” Advanced Functional Materials, Vol. 36, Art. no. e20150, November 2025.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_materialsengineering)

121) Gwangmin An, Seungjun Lee, Hyeonho Lee, Gimun Kim, Tae‐Hyeon Kim, Heung Soo Kim, Yang Chai, and Sungjun Kim, “Nanolaminate Ferroelectric Transistor Enabling Wide‐Reservoir In Sensor Neuromorphic Vision,” Vol. 38, Art. no. e22251, February 2026.

(IF = 27.4 (2023), 26.8 (2024), 29.1 (2025))

(IF 상위 1.8% (51/191) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 2.3% (45/187) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 1.9% (5/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Chemical & Material Sciences 분야 1위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_materialsengineering)

120) Jooyoung Uhm, Yongjin Byun, Seungman Park, Sungjun Kim, and Min-Jae Choi, “Iodide-Coated CsPbBr3 Perovskite Nanowires for Resistive-Switching Memory in Neuromorphic Systems and Edge Computing,” Nano Letters, Vol. 26, pp. 3503–3513, March 2026.

(IF = 9.6 (2023), 9.1 (2024), 9.1 (2025))

(IF 상위 17% (51/191) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 14% (45/187) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 12.3% (35/179) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Nanotechnology 분야 6위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_nanotechnology)

119) Minsu Ko, Yongjin Byun, and Sungjun Kim, “Toward More Realistic Synaptic Mimicry in Non-Volatile RRAM Devices: A Novel Experimental Approach Focused on Synaptic Forgetting,” Advanced Materials Technologies, Vol. 11, Art. no. e01570, May 2026.

(IF = 6.4 (2023), 6.2 (2024), 6.0 (2025))

(IF 상위 30.4% (144/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 23.8% (122/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 19.3% (100/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

118) Ungbin Byun, Hyesung Na, and Sungjun Kim, “Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching,” Advanced Functional Materials, Vol. 36, Art. no. e19431, September 2025.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_materialsengineering)

117) Heeseong Jang, Seohyeon Ju, Youngseo Lee, Minsu Ko, Chanmin Park, Min Hwi Kim, and Sungjun Kim, “Light-Programmable IGZO Optoelectronic Memristor for Multifunctional Neuromorphic Computing,” ACS Applied Materials & Interfaces, Issue 6, pp. 10087–10098, February, 2026.

(IF = 8.5 (2023), 8.2 (2024), 7.8 (2025))

(IF 상위 22.4% (106/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 17.9% (83/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 15.4% (68/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Materials Enginnering 분야 10위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm)

116) Hyojeong Chae, Minsu Ko, and Sungjun Kim, “Interfacial AlOx-insertion–driven synaptic enhancement and tunneling control in HfO2-based ferroelectric MIFS memristors,” Journal of Alloys and Compounds, Vol. 1055, Article 186549, February, 2026.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

115) Seoyoung Park, Minsuk Koo, and Sungjun Kim, “Enhancing non-volatile memory and neuromorphic computing: integration of PRAM and OTS for scalable, energy-efficient architectures,” Journal of Physics D: Applied Physics, Issue 2, Article 023006, January, 2026.

(IF = 3.1 (2023), 3.2 (2024), 3.2 (2025))

(IF 상위 44.8% (86/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 37.7% (71/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 34.9% (63/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

114) Jio Shin, Chaewon Youn, and Sungjun Kim, “Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristors,” The Journal of Chemical Physics, Issue 2, Article 024702, January, 2026.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

(IF 상위 19.7% (8/38) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2025)

(IF 상위 24.4% (10/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

(IF 상위 18.7% (8/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

113) Seoyoung Park, Minsuk Koo, and Sungjun Kim, “Advancing phase-change random access memory: materials innovation neuromorphic applications, and scalability challenges,” Journal of Physics D: Applied Physics, Issue 1, Article 013001, January, 2026.

(IF = 3.1 (2023), 3.2 (2024), 3.2 (2025))

(IF 상위 44.8% (86/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 37.7% (71/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 34.9% (63/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

112) Hyesung Na, Jung Soo Kim, Gimun Kim, Jaewoo Choi, Kang Ryoung Park, and Sungjun Kim, “Stochastic Yet Precise: Memristor Crossbar Arrays Enabling Robust In-Memory Computing, Hardware Security, and Generative Adversarial Network,” Advanced Functional Materials, Issue 31, Article e23780, April, 2026.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2023)

Google scholar 기준 Materials Enginnering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm)

111) Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, and Sungjun Kim, “Optically Tunable Synaptic Plasticity and Memory Emulation in Au-Nanoparticle Enhanced HfTiOx/Al2O3-Based Photonic Memristors,” Advanced Functional Materials, Issue 3, Article e10663, January, 2026.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2023)

Google scholar 기준 Materials Enginnering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm)

(2025)

(SCIE : 56)

110) Woohyun Park, Hyojeong Chae, Jeonguk Park, Seongmin Kim, Chanmin Park, Yeongkyo Seo, and Sungjun Kim, “AlScN-based Ferroelectric Memristor for Electrical Synapse Emulation and Light-Stimulated Reservoir Computing,” The Journal of Chemical Physics, Issue 23, Article 234707, December, 2025.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

(IF 상위 19.7% (8/38) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2025)

(IF 상위 24.4% (10/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

(IF 상위 18.7% (8/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

109) Donghyun Ryu, Suyong Park, Seongmin Kim, Hyeon Ho Lee, Sungjun Kim, and Woo Young Choi, “Physical reservoir computing system fully implemented using a single flash memory device via tailored decay pulse modulation,” Nano Energy, Vol. 146, Article 111525, December, 2025.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

Google scholar 기준 Nanotechnology 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_nanotechnology)

108) Kyeongjun Min, Heeseong Jang, and Sungjun Kim, “Atomic-layer-deposited TiN interlayer suppressing oxygen migration in HfO2 RRAM for neuromorphic computing,” Journal of Alloys and Compounds, Vol. 1050, Article 185586, January, 2026.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

107) Yeji Lee, Soomin Kim, Seongmin Kim, Wonbo Shim, Sungjun Kim, and Seongjae Cho, “A Fully Si-Compatible Ni/Si3N4/Al2O3/p+ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications,” ACS Omega, Issue 47, pp. 57476–57486, November, 2025.

(IF = 3.7 (2023), 4.3 (2024), 5.2 (2025))

(IF 상위 33.0% (83/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 33.7% (81/239) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 37.0% (86/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

106) Gwangmin An, Seungjun Lee, Yeongkyo Seo, and Sungjun Kim, “Multifunctional ferroelectric synaptic memristors based on HfAlOx with enhanced Pavlovian learning and physical reservoir computing systems,” Physical Chemistry Chemical Physics, Issue 45, pp. 24522–24533, November, 2025.

(IF = 2.9 (2023), 2.9 (2024), 3.0 (2025))

(IF 상위 27.6% (11/38) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2025)

(IF 상위 32.1% (13/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

(IF 상위 21.2% (9/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

105) Seung Joo Myoung, Dong Hyeop Shin, Jung Rae Cho, Seungki Kim, Seong Hoon Jeon, Wonjung Kim, Jungwoo Lee, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Sungjun Kim, and Dae Hwan Kim, “Analog switching and retention modulation in stack-designed InGaZnO memristors for neuromorphic systems,” Materials Science in Semiconductor Processing, Vol. 199, Article 109897, November, 2025.

(IF = 4.2 (2023), 4.6 (2024), 5.2 (2025))

(IF 상위 22.9% (85/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 26.0% (96/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 25.1% (89/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023)

104) Muhammad Ismail, Seungjun Lee, Maria Rasheed, Chandreswar Mahata, and Sungjun Kim, “Exploitation of temporal dynamics and synaptic plasticity in multilayered ITO/ZnO/IGZO/ZnO/ITO memristor for energy-efficient reservoir computing,” Journal of Materials Science & Technology, Vol. 235, pp. 37–52, November, 2025.

(IF = 11.2 (2023), 14.3 (2024), 16.8 (2025))

(IF 상위 0.5% (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 0.5% (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 1.7% (2/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

Google scholar 기준 Matellurgy 분야 1위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_nanotechnology)

103) Seungjun Lee, Heeseong Jang, Gwangmin An, Seohyeon Ju, and Sungjun Kim, “Synergistic multi-wavelength optical stimulation enhances synaptic dynamics and reservoir computing performance in ferroelectric thin-film transistors,” Nano Energy, Vol. 144, Article 111395, November, 2025.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

Google scholar 기준 Nanotechnology 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_nanotechnology)

102) Heeseong Jang, Seongmin Kim, Seohyeon Ju, Seungman Park, Sungjun Kim, and Min-Hwi Kim, “Multifunctional ZnO-based optical memristors for synapse–neuron integration and neuromorphic vision systems,” Nanoscale, Issue 42, pp. 24566–24577, October, 2025.

(IF = 5.8 (2023), 5.1 (2024), 5.2 (2025))

(IF 상위 23.8% (46/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 24.3% (46/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 18.2% (33/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

Google scholar 기준 Nanotechnology 분야 8위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_nanotechnology)

101) Minseo Noh and Sungjun Kim, “Material-engineered self-compliant memristor enabling multibit synaptic learning and in-memory computing,” Journal of Materials Chemistry C, Issue 40, pp. 20675–20689, October, 2025.

(IF = 5.7 (2023), 5.2 (2024), 5.1 (2025))

(IF 상위 26.4% (51/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 23.8% (45/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 19.3% (35/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

100) Donghyun Ryu, Suyong Park, Gimun Kim, Hyeon Ho Lee, Sungjoon Kim, Sungjun Kim, and Woo Young Choi, “Crystallization-Induced Interface Control in Poly-Si Flash for High-Accuracy Neuromorphic Inference,” ACS Applied Electronic Materials, Issue 21, pp. 9830–9837, November, 2025.

(IF = 4.4 (2023), 4.7 (2024), 4.7 (2025))

(IF 상위 28.0% (104/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 25.4% (94/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 22.8% (81/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023)

99) Nawoon Kim, Jihee Park, Hyesung Na, and Sungjun Kim, “Enabling High-Accuracy Neuromorphic Computing via Precise Synaptic Weight Tuning in HfOx-Based 3D Vertical Memristors,” Advanced Materials Technologies, Vol. 10, No. 19, Article e00651, 7 October, 2025.

(IF = 6.4 (2023), 6.2 (2024), 6.0 (2025))

(IF 상위 30.4% (144/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 26.4% (122/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 22.7% (100/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

98) Suyong Park, Donghyun Ryu, Sungjoon Kim, Woo Young Choi, and Sungjun Kim, “Fully CMOS Compatible Charge Trap Memory-Based Reservoir Computing System,” Advanced Materials Technologies, Vol. 10, No. 19, Article e00858, 7 October, 2025.

(IF = 6.4 (2023), 6.2 (2024), 6.0 (2025))

(IF 상위 30.4% (144/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 26.4% (122/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 22.7% (100/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

97) Muhammad Ismail, Hyesung Na, Youngseo Lee, Maria Rasheed, Chandreswar Mahata, Jung Kyu Lee, and Sungjun Kim, “Hybrid WS2-Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive Learning,” Small, Vol. 21, No. 47, Article e08508, 27 November, 2025.

(IF = 13.0 (2023), 12.1 (2024), 11.8 (2025))

(IF 상위 9.6% (27/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 9.8% (24/239) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 10.4% (19/178) SCIE (CHEMISTRY, PHYSICAL 분야) (JCR 2023)

96) Youngseo Lee and Sungjun Kim, “Enhanced Synaptic Performance in Hafnia-Based Ferroelectric Memristors with MIFS Structure for Neuromorphic Computing,” Ceramics International, Vol. 51, No. 25, pp. 44919–44929, October, 2025.

(IF = 5.1 (2023), 5.6 (2024), 6.0 (2025))

(IF 상위 7.4% (3/34) SCIE (MATERIALS SCIENCE, CERAMICS 분야) (JCR 2025)

(IF 상위 7.4% (3/34) SCIE (MATERIALS SCIENCE, CERAMICS 분야) (JCR 2024)

(IF 상위 8.1% (3/31) SCIE (MATERIALS SCIENCE, CERAMICS 분야) (JCR 2023)

95) Hyesung Na and Sungjun Kim, “Enhanced Reliability and Controllability in Filamentary Oxide-Based 3D Vertical Structured Resistive Memory with Pulse Scheme Algorithm for Versatile Neuromorphic Applications,” Advanced Functional Materials, Vol. 35, No. 40, Article 2500956, 1 October, 2025.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

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94) Muhammad Ismail, Hyesung Na, Maria Rasheed, Chandreswar Mahata, Hyun Seok Kim, Heung Soo Kim, Janghyuk Moon, and Sungjun Kim, “TiN/TiOx/BaTiO3/Pt Heterostructure Memristors for Adaptive Neuromorphic Systems,” Chemical Engineering Journal, Vol. 520, Article 166292, 15 September, 2025.

(IF = 13.4 (2023), 13.2 (2024), 12.5 (2025))

(IF 상위 4.0% (4/88) SCIE (ENGINEERING, ENVIRONMENTAL 분야) (JCR 2025)

(IF 상위 3.0% (3/83) SCIE (ENGINEERING, ENVIRONMENTAL 분야) (JCR 2024)

(IF 상위 3.1% (3/81) SCIE (ENGINEERING, ENVIRONMENTAL 분야) (JCR 2023)

93) Heeseong Jang, Seohyeon Ju, Seeun Lee, Jaewoo Choi, Ungbin Byun, Kyeongjun Min, Maria Rasheed, and Sungjun Kim, “Recent Advances in Optoelectronic Synaptic Devices for Neuromorphic Computing,” Biomimetics, Vol. 10, No. 9, Article 584, 3 September, 2025.

(IF = 3.4 (2023), 3.9 (2024), 4.2 (2025))

(IF 상위 19.9% (36/178) SCIE (ENGINEERING, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 17.0% (31/179) SCIE (ENGINEERING, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 19.5% (34/181) SCIE (ENGINEERING, MULTIDISCIPLINARY 분야) (JCR 2023)

92) Jung Kyu Lee, Yongjin Park, Euncho Seo, Jong Ho Lee, Sungjoon Kim, and Sungjun Kim, “Integrated Design of Electrically Configurable Ferroelectric and Redox-Based Memristors for Hardware-Implemented Reservoir Computing,” Advanced Science, Vol. 12, No. 33, Article e05688, 4 September, 2025.

(IF = 14.3 (2023), 14.1 (2024), 14.1 (2025))

(IF 상위 9.4% (24/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 7% (33/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 6.5% (29/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Chemical & Material Sciencees (general) 분야 7위 저널

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91) Minseo Noh, Yongjin Byun, Gimun Kim, Junhyeok Park, Sungjoon Kim, and Sungjun Kim, “Array-Integrated Memristor with an Interference-Suppressed Pulse Scheme for Multibit Neuromorphic and Edge Computing,” ACS Applied Electronic Materials, Vol. 7, No. 17, pp. 8211–8226, 9 September, 2025.

(IF = 4.4 (2023), 4.7 (2024), 4.7 (2025))

(IF 상위 28.0% (104/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 25.4% (94/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 22.8% (81/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023)

90) Muhammad Ismail, Hyesung Na, Maria Rasheed, Chandreswar Mahata, Yoon Kim, and Sungjun Kim, “Synaptic Metaplasticity and Associative Learning in Low-Power Neuromorphic Computing Using W-Diffused BaTiO3 Memristors,” Nano Energy, Vol. 142, Article 111276, September, 2025.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

Google scholar 기준 Chemical & Material Sciencees (general) 분야 16위 저널

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89) Yongjin Byun, Gimun Kim, Sungjoon Kim, and Sungjun Kim, “Reset-Dominant Accurate Synaptic Weight Mapping in Passive Memristor Arrays for Energy-Efficient Spiking Neural Networks,” Nano Energy, Vol. 142, Article 111261, September, 2025.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

Google scholar 기준 Chemical & Material Sciencees (general) 분야 16위 저널

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88) Woohyun Park, Gimun Kim, Hyojeong Chae, Seungjun Lee, and Sungjun Kim, “HfAlOx-Based Optical Ferroelectric Memristor with Transparent Electrode for RGB Color Image Classification via Physical Reservoir,” Nano Energy, Vol. 142, Article 111190, September, 2025.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

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87) Seungjun Lee, Gwangmin An, Doohyung Kim, Hyeonho Lee, Sungjun Kim, and Tae Hyeon Kim, “Energy Efficient Hybrid Reservoir Computing Using Hf0.5Zr0.5O2 Ferroelectric Thin-Film Transistors with an Integrated Optically and Electrically Synaptic Functions,” Small, Vol. 21, No. 32, Article 2501276, 14 August, 2025.

(IF = 13.0 (2023), 12.1 (2024), 11.8 (2025))

(IF 상위 9.6% (27/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 9.8% (24/239) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 10.4% (19/178) SCIE (CHEMISTRY, PHYSICAL 분야) (JCR 2023)

86) Seo Young Jo, Heeseong Jang, Dhananjay Mishra, Sungjun Kim, and Sung Hun Jin, “Reliable Neuromorphic and Nociceptive Behavior in Dual-Stacked IGZO/ZrOX Resistive Random Access Memory for Transparent Memory Applications,” physica status solidi (RRL) – Rapid Research Letters, Vol. 19, No. 10, Article 2500103, October, 2025.

(IF = 2.5 (2023), 2.0 (2024), 16.7 (2025))

(IF 상위 70.4% (135/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 69.3% (130/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 48.3% (87/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

85) Yongjin Park, Eunjin Lim, Seungjun Lee, Vihar Georgiev, Sungjoon Kim, and Sungjun Kim, “Ferroelectric memristor crossbar arrays for highly integrated neuromorphic computing system,” Nano Energy, Vol. 141, 111137, pp. August, 2025.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_nanotechnology

84) Hyogeun Park, Hyojin So, Minsu Ko, Sungjun Kim, and Sungjoon Kim, “Dual-Mode Functionality in Analog-Weight-Tunable TiOx-Based RRAM: Exploiting Optical and Electrical Stimuli for Synaptic Behaviors,” ACS Applied Electronic Materials, Vol. 7, No. 15, pp. 7432–7445, July, 2025.

(IF = 4.4 (2023), 4.7 (2024), 4.7 (2025))

(IF 상위 28.0% (104/369)SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 25.4% (94/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 22.8% (81/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC분야) (JCR 2023)

83) Suyong Park, Seongmin Kim, Sungjoon Kim, Kyungchul Park, Donghyun Ryu, and Sungjun Kim, “InGaZnO Optoelectronic Synaptic Transistor for Reservoir Computing and LSTM-Based Prediction Model,” Advanced Optical Materials, Vol. 13, No. 21, 2500634, pp. May, 2025.

(IF = 8.0 (2023), 7.2 (2024), 7.2 (2025))

(IF 상위 11.2% (15/129) SCIE (OPTICS 분야) (JCR 2025)

(IF 상위 11.6% (15/125) SCIE (OPTICS 분야) (JCR 2024)

(IF 상위 8.0% (10/119) SCIE (OPTICS 분야) (JCR 2023)

82) Jihee Park, Gimun Kim, and Sungjun Kim, “Fully hardware-oriented physical reservoir computing using 3D vertical resistive switching memory with different bottom electrodes,” Materials Horizons, Vol. 12, No. 14, pp. 5259–5276, 21 July, 2025.

(IF = 12.2 (2023), 10.7 (2024), 11.4 (2025))

(IF 상위 11% (28/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 11.1% (27/239) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 8.8% (39/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

81) Jio Shin, Euncho Seo, Chaewon Youn, and Sungjun Kim, “Ferroelectric tunnel junctions with 5 nm-thick HZO for tunable synaptic plasticity and neuromorphic computing,” Journal of Alloys and Compounds, Vol. 1036, 181869, 20 July, 2025.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 26.4% (51/191) SCIE (CHEMISTRY, PHYSICAL 분야) (JCR 2025)

(IF 상위 25.7% (27/239) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 24.7% (109/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

80) Dongyeol Ju, Minseo Noh, Seungjun Lee, Gimun Kim, Jihee Park, and Sungjun Kim, “Self-Rectifying Volatile Memristor for Highly Dynamic Functions,” Advanced Functional Materials, 2423880, 19 February, 2025.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 5.2% (13/239) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm

79) Seohyeon Ju, Heeseong Jang, Woohyun Park, Sungyeop Jung, and Sungjun Kim, “Emulating nociceptor and synaptic functions in GaOx-based resistive random-access memory for bio-inspired computing,” Applied Surface Science, Vol. 697, 162973, 15 July, 2025.

(IF = 6.3 (2023), 6.9 (2024), 6.6 (2025))

(IF 상위 19.1% (37/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 10.4% (3/24) SCIE (MATERIALS SCIENCE, COATINGS & FILMSD 분야) (JCR 2024)

(IF 상위 10.9% (3/23) SCIE (MATERIALS SCIENCE, COATINGS & FILMSD 분야) (JCR 2023)

78) Minseo Noh, Hyogeun Park, and Sungjun Kim, “Dynamic resistive switching of WOx-based memristor for associative learning activities, on-receptor, and reservoir computing,” Chaos, Solitons & Fractals, Vol. 196, 116381, July, 2025.

(IF = 5.3 (2023), 5.6 (2024), 5.7 (2025))

(IF 상위 0.8% (1/61) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2025)

(IF 상위 0.8% (1/61) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2024)

(IF 상위 2.5% (2/60) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2023)

https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=phy_nonlinearscience

77) Hyogeun Park, Minseo Noh, Seongjae Cho, and Sungjun Kim, “CMOS compatible SiN-based memristive synapses for edge computing applications,” Journal of Alloys and Compounds, Vol. 1034, 181398, 25 June, 2025.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

76) Woochan Chung, Doohyung Kim, Juri Kim, Jongmin Park, Sungjun Kim, and Sejoon Lee, “Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system,” Journal of Materials Science & Technology, Vol. 218, 25–34, 20 May, 2025.

(IF = 11.2 (2023), 14.3 (2024), 16.8 (2025))

(IF 상위 0.5% (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 0.5%) (1/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 1.7%) (2/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023))

75) Seungjun Lee, Gwangmin An, Gimun Kim, and Sungjun Kim, “Physical reservoir computing-based online learning of HfSiOx ferroelectric tunnel junction devices for image identification,” Applied Surface Science, Vol. 689, 162459, 30 April, 2025.

(IF = 6.3 (2023), 6.9 (2024), 6.6 (2025))

(IF 상위 19.1% (37/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 10.4% (3/24) SCIE (MATERIALS SCIENCE, COATINGS & FILMSD 분야) (JCR 2024)

(IF 상위 10.9% (3/23) SCIE (MATERIALS SCIENCE, COATINGS & FILMSD 분야) (JCR 2023)

74) Chih Chieh Hsu, Zong Lin Cai, Min Yi Hsu, Wun Ciang Jhang, and Sungjun Kim, “Demonstration of bipolar resistance switching characteristics of sol-gel derived BaOx resistive memory,” Materials Science in Semiconductor Processing, Vol. 189, 109297, April, 2025.

(IF = 4.2 (2023), 4.6 (2024), 5.2 (2025))

(IF 상위 22.9% (85/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 26% (96/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 25.1% (89/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023)

73) Jungkyu Lee, Yongjin Park, Euncho Seo, Woohyun Park, Chaewon Youn, Sejoon Lee, and Sungjun Kim, “Strategy for the Integrated Design of Ferroelectric and Resistive Memristors for Neuromorphic Computing Applications,” ACS Applied Electronic Materials, Vol. 7 (7), 25 March, 2025.

(IF = 4.4 (2023), 4.7 (2024), 4.7 (2025))

(IF 상위 28.0% (104/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 25.4% (94/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 22.8% (81/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023)

72) Minseo Noh, Hyogeun Park, and Sungjun Kim, “Cognitive Learning and Neuromorphic Systems Using Resistive Switching Random-Access Memory,” ACS Applied Electronic Materials, Vol. 7 (6), 8 March, 2025.

(IF = 4.4 (2023), 4.7 (2024), 4.7 (2025))

(IF 상위 28.0% (104/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025)

(IF 상위 25.4% (94/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024)

(IF 상위 22.8% (81/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023)

71) Chandreswar Mahata, Gimun Kim, Hyojin So, Muhammad Ismail, Chih-Chieh Hsu, Sungjoon Kim, and Sungjun Kim, “Metaplasticity and Reservoir Computing in Bio-Realistic Artificial Synapses with Embedded Localized Au-Nanoparticle-Based Memristors,” Advanced Functional Materials, Vol. 35, No. 10, Article 2416862, 4 March 2025.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024))

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023))

Google scholar 기준 Materials Engineering 분야 2위 저널

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70) Dongyeol Ju, Minseo Noh, Gyeongpyo Kim, Jungwoo Lee, and Sungjun Kim, “Dynamic memristor for bioinspired sensory memory,” MRS Bulletin, Vol. 50, No. 3, pp. 247-257, 3 January 2025.

(IF = 4.1 (2023), 4.9 (2024), 5.7 (2025))

(IF 상위 22.5% (43/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025))

(IF 상위 26.7% (50/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024))

(IF 상위 29.1% (52/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023))

69) Prashant Kumar, Heung Soo Kim, Sungjun Kim, Hyun-Seok Kim, and Janghyuk Moon, “Recent Advances in Artificial Intelligence-Driven Prognostics and Health Management of Mobility Batteries,” Multiscale Science and Engineering, Vol. 7, No. 1, pp. 98-113, 24 April 2025.

(IF = N/A)

(JCR = N/A)

68) Euncho Seo, Eunjin Lim, Jio Shin, and Sungjun Kim, “Depolarization Field Controllable HfZrOx-Based Ferroelectric Capacitors for Physical Reservoir Computing System,” ACS Applied Materials & Interfaces, Vol. 17, No. 14, pp. 21401-21409, 9 April 2025.

(IF = 8.5 (2023), 8.2 (2024), 7.8 (2025))

(IF 상위 22.4% (106/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 17.9% (83/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 15.4% (68/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

Google scholar 기준 Materials Engineering 분야 10위 저널

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67) Heeseong Jang, Dongyeol Ju, and Sungjun Kim, “Demonstration of cognitive learning, associative learning, and multi-bit reservoir computing using TiOx/HfOx-based volatile memristor with low current,” Journal of Alloys and Compounds, Vol. 1016, Article 178897, February 2025.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024))

(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023))

66) Gyeongpyo Kim, Doheon Yoo, Hyojin So, Seoyoung Park, Sungjoon Kim, Min-Jae Choi, and Sungjun Kim, “Precise weight tuning in quantum dot-based resistive-switching memory for neuromorphic systems,” Materials Horizons, Vol. 12, No. 3, pp. 915-925, 2025.

(IF = 12.2 (2023), 10.7 (2024), 11.4 (2025))

(IF 상위 11.0% (28/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 11.1% (27/239) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 8.8% (39/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

65) Jihee Park, Heeseong Jang, Yongjin Byun, Hyesung Na, Hyeonseung Ji, and Sungjun Kim, “Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer,” Chaos, Solitons & Fractals, Vol. 191, Article 115910, February 2025.

(IF = 5.3 (2023), 5.6 (2024), 5.7 (2025))

(IF 상위 0.8% (1/61) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2025))

(IF 상위 0.8% (1/61) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2024))

(IF 상위 2.5% (2/60) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2023))

Google scholar 기준 Nonlinear Science 분야 1위 저널

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64) Donguk Kim, Dayeon Lee, Wonjung Kim, Ho Jung Lee, Changwook Kim, Kwang-Hee Lee, Moonil Jung, Jee-Eun Yang, Younjin Jang, Sungjun Kim, Sangwook Kim, and Dae Hwan Kim, “Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors,” ACS Applied Materials & Interfaces, Vol. 17, No. 4, pp. 6513-6520, 29 January 2025.

(IF = 8.5 (2023), 8.2 (2024), 7.8 (2025))

(IF 상위 22.4% (106/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 17.9% (83/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 15.4% (68/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

Google scholar 기준 Materials Engineering 분야 10위 저널

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63) Eunjin Lim, Yongjin Park, Chaewon Youn, and Sungjun Kim, “3D Vertical Ferroelectric Capacitors with Excellent Scalability,” Nano Letters, Vol. 25, No. 6, pp. 2166-2172, 12 February 2025.

(IF = 9.6 (2023), 9.1 (2024), 9.1 (2025))

(IF 상위 17.0% (51/191) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 14.0% (45/187) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 12.3% (35/179) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023))

Google scholar 기준 Nanotechnology 분야 6위 저널

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62) Heeseong Jang, Jungang Heo, Jihee Park, Hyesung Na, and Sungjun Kim, “Coexistence of short- and long-term memory in NbOx-based memristor for a nonlinear reservoir computing system,” Frontiers of Physics, Vol. 20, No. 1, Article 014208, February 2025.

(IF = 6.5 (2023), 5.3 (2024), 6.6 (2025))

(IF 상위 11.2% (13/112) SCIE (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 17.1% (20/114) SCIE (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 9.4% (11/112) SCIE (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2023))

61) Alexandros E. Mavropoulis, Nikolaos Vasileiadis, Pascal Normand, Christoforos Theodorou, Georgios Ch. Sirakoulis, Sungjun Kim, and Panagiotis Dimitrakis, “Effect of Al2O3 on the operation of SiNx-based MIS RRAMs,” Solid-State Electronics, Vol. 223, Article 109035, January 2025.

(IF = 1.4 (2023), 1.4 (2024), 1.4 (2025))

(IF 상위 79.5% (294/369) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2025))

(IF 상위 75.1% (277/368) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2024))

(IF 상위 73.5% (260/353) SCIE (ENGINEERING, ELECTRICAL & ELECTRONIC 분야) (JCR 2023))

60) Muhammad Ismail, Maria Rasheed, Yongjin Park, Jungwoo Lee, Chandreswar Mahata, and Sungjun Kim, “Dynamic FeOx/FeWOx nanocomposite memristor for neuromorphic and reservoir computing,” Nanoscale, Vol. 17, No. 1, pp. 361-377, 2025.

(IF = 5.8 (2023), 5.1 (2024), 5.2 (2025))

(IF 상위 23.8% (46/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025))

(IF 상위 24.3% (46/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024))

(IF 상위 18.2% (33/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023))

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59) Chih-Chieh Hsu, Wen-Chin Wu, Zheng-Kai Xiao, Wun-Ciang Jhang, Zi-Rong Qiu, and Sungjun Kim, “Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ~5 nm,” Physica B: Condensed Matter, Vol. 697, Article 416681, 15 January 2025.

(IF = 2.8 (2023), 2.8 (2024), 3.2 (2025))

(IF 상위 43.8% (36/81) SCIE (PHYSICS, CONDENSED MATTER 분야) (JCR 2025))

(IF 상위 47.5% (38/80) SCIE (PHYSICS, CONDENSED MATTER 분야) (JCR 2024))

(IF 상위 46.8% (37/79) SCIE (PHYSICS, CONDENSED MATTER 분야) (JCR 2023))

58) Hyeonseung Ji, Sungjoon Kim, and Sungjun Kim, “Self-Rectifying Short-Term Memory Phenomena Through Integration of TiOx Oxygen Reservoir and Al2O3 Barrier Layers for Neuromorphic System,” Advanced Materials Technologies, Vol. 10, No. 3, Article 2400895, 5 February 2025.

(IF = 6.4 (2023), 6.2 (2024), 6.0 (2025))

(IF 상위 30.4% (144/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 26.4% (122/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 22.7% (100/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

57) Sungjoon Kim, Hyeonseung Ji, Sungjun Kim, and Woo Young Choi, “Enhanced Reliability and Self-Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems,” Advanced Electronic Materials, Vol. 11, No. 2, Article 2400282, February 2025.

(IF = 5.3 (2023), 5.3 (2024), 5.9 (2025))

(IF 상위 21.7% (42/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025))

(IF 상위 22.7% (43/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024))

(IF 상위 23.7% (43/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023))

56) Yoonseok Lee, Beomki Jeon, Youngboo Cho, Jihyung Kim, Wonbo Shim, and Sungjun Kim, “Recent Progress in Memristor Array Structures and Solutions for Sneak Path Current Reduction,” Advanced Materials Technologies, Vol. 10, Issue 4, Article 2400585, February, 2025.

(IF = 6.4 (2023), 6.2 (2024), 6.0 (2025))

(IF 상위 30.4% (144/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 26.4% (122/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 22.7% (100/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

55) Dongyeol Ju and Sungjun Kim, “Mimicking Classical Conditioning of Fear Using a Dynamic Synaptic Memristor,” Advanced Electronic Materials, Vol. 11, Issue 3, Article 2400493, March, 2025.

(IF = 5.3 (2023), 5.3 (2024), 5.9 (2025))

(IF 상위 21.7% (42/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 22.7% (43/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 23.7% (42/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

(2024)

(SCIE : 54)

54) Donguk Kim, Dayeon Lee, Wonjung Kim, Ho Jung Lee, Changwook Kim, Kwang-Hee Lee, Moonil Jung, Jee-Eun Yang, Younjin Jang, Sungjun Kim, Sangwook Kim, and Dae Hwan Kim, “Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors,” Scientific Reports, Vol. 14, Article 30873, December, 2024.

(IF = 3.8 (2023), 3.9 (2024), 4.9 (2025))

(IF 상위 14.6% (21/140) SCIE (MULTIDISCIPLINARY SCIENCES 분야) (JCR 2025)

(IF 상위 18.0% (25/136) SCIE (MULTIDISCIPLINARY SCIENCES 분야) (JCR 2024)

(IF 상위 18.3% (25/134) SCIE (MULTIDISCIPLINARY SCIENCES 분야) (JCR 2023)

53) Woohyun Park, Yongjin Park, and Sungjun Kim, “Ferroelectric properties of HfAlOx-based ferroelectric memristor devices for neuromorphic applications: Influence of top electrode deposition method,” The Journal of Chemical Physics, Vol. 161, Issue 23, Article 234706, December, 2024.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

(IF 상위 19.7% (8/38) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2025)

(IF 상위 24.4% (10/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

(IF 상위 18.7% (8/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

52) Hyojin So, Hyeonseung Ji, Sungjoon Kim, and Sungjun Kim, “Sophisticated Conductance Control and Multiple Synapse Functions in TiO2-Based Multistack-Layer Crossbar Array Memristor for High-Performance Neuromorphic Systems,” Advanced Functional Materials, Vol. 34, Issue 51, Article 2405544, December, 2024.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_materialsengineering)

51) Muhammad Ismail, Euncho Seo, Maria Rasheed, Yongjin Park, Chandreswar Mahata, and Sungjun Kim, “Reservoir computing and advanced synaptic plasticity of sputter-deposited ZnO memristors with controllable threshold and nonvolatile switching behavior,” The Journal of Chemical Physics, Vol. 161, Issue 22, Article 224701, December, 2024.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

(IF 상위 19.7% (8/38) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2025)

(IF 상위 24.4% (10/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

(IF 상위 18.7% (8/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

50) Doohyung Kim, Seungjun Lee, Yoonseok Lee, Yongjin Park, Jungwoo Lee, and Sungjun Kim, “Cost-Effective and Fully Hardware-Oriented Reservoir Computing Based on IGZO/HZO Ferroelectric Thin-Film Transistor with Electrically and Optically Distinguishable States,” Advanced Functional Materials, Vol. 34, Issue 49, Article 2409095, December, 2024.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm_materialsengineering)

49) Dongyeol Ju and Sungjun Kim, “Versatile NbOx-Based Volatile Memristor for Artificial Intelligent Applications,” Advanced Functional Materials, Vol. 34, Issue 49, Article 2409436, December, 2024.

(IF = 18.5 (2023), 19.0 (2024), 19.9 (2025))

(IF 상위 4.2% (11/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 4.5% (9/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 4.1% (10/231) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Materials Engineering 분야 2위 저널

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48) Subaek Lee, Juri Kim, and Sungjun Kim, “Self-aligned TiOx-based 3D vertical memristor for a high-density synaptic array,” Frontiers of Physics, Vol. 19, Issue 6, Article 63203, December, 2024.

(IF = 6.5 (2023), 5.3 (2024), 6.6 (2025))

(IF 상위 11.2% (13/112) SCIE (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 17.1% (20/114) SCIE (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 9.4% (11/112) SCIE (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2023)

47) Eunjin Lim, Dahye Kim, Jongmin Park, Minsuk Koo, and Sungjun Kim, “Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions,” Journal of Physics D: Applied Physics, Vol. 57, Issue 47, Article 473001, November, 2024.

(IF = 3.1 (2023), 3.2 (2024), 3.2 (2025))

(IF 상위 44.8% (86/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 37.7% (71/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 34.9% (63/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

46) Dongyeol Ju, Minseo Noh, Gimun Kim, Yongjin Park, Sejoon Lee, and Sungjun Kim, “Reservoir Computing System with Diverse Input Patterns in HfAlO-Based Ferroelectric Memristor,” ACS Applied Materials & Interfaces, Vol. 16, Issue 48, pp. 66250–66261, December, 2024.

(IF = 8.5 (2023), 8.2 (2024), 7.8 (2025))

(IF 상위 22.4% (106/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 17.9% (83/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 15.4% (68/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

45) Dongyeol Ju, Jungwoo Lee, Hyojin So, and Sungjun Kim, “TiN/TiOx/WOx/Pt heterojunction memristor for sensory and neuromorphic computing,” Journal of Alloys and Compounds, Vol. 1004, Article 175830, November, 2024.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

44) Dongyeol Ju, Minseo Noh, Subaek Lee, Jungwoo Lee, Sungjun Kim, and Jung-Kyu Lee, “Investigation of the Versatile Utilization of Three-Dimensional Vertical Resistive Random-Access Memory in Neuromorphic Computing,” ACS Applied Materials & Interfaces, Vol. 16, Issue 43, pp. 59497–59506, October, 2024.

(IF = 8.5 (2023), 8.2 (2024), 7.8 (2025))

(IF 상위 22.4% (106/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 17.9% (83/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 15.4% (68/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

43) Jungwoo Lee, Chaewon Youn, Jungang Heo, and Sungjun Kim, “Online and offline learning using fading memory functions in HfSiOx-based ferroelectric tunnel junctions,” Journal of Materials Chemistry C, Vol. 12, Issue 43, pp. 17362–17376, October, 2024.

(IF = 5.7 (2023), 5.2 (2024), 5.1 (2025))

(IF 상위 26.4% (51/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 23.8% (45/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 19.3% (35/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

42) Yongjin Byun, Hyojin So, and Sungjun Kim, “Convolutional neural network for high-performance reservoir computing using dynamic memristors,” Chaos, Solitons and Fractals, Vol. 188, Article 115536, November, 2024.

(IF = 5.3 (2023), 5.6 (2024), 5.7 (2025))

(IF 상위 1.6% (1/61) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2025)

(IF 상위 1.6% (1/61) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2024)

(IF 상위 3.3% (2/60) SCIE (PHYSICS, MATHEMATICAL 분야) (JCR 2023)

Google scholar 기준 Nonlinear Science 분야 1위 저널 (https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=phy_nonlinearscience

41) Jungang Heo, Seongmin Kim, Sungjun Kim, and Min-Hwi Kim, “Configurable Synaptic and Stochastic Neuronal Functions in ZnTe-Based Memristor for an RBM Neural Network,” Advanced Science, Vol. 11, Issue 42, Article 2405768, November, 2024.

(IF = 15.1 (2023), 14.3 (2024), 14.1 (2025))

(IF 상위 9.6% (24/250) SCIE (CHEMISTRY, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 7.2% (33/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 6.6% (29/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Chemical & Material Sciencees (general) 분야 7위 저널

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40) Hyesung Na, Hyojin So, Heesung Jang, Jihee Park, and Sungjun Kim, “ZnO-based resistive memory with self-rectifying behavior for neuromorphic devices,” Applied Surface Science, Vol. 671, Article 160749, July, 2024.

(IF = 6.3 (2023), 6.9 (2024), 6.6 (2025))

(IF 상위 19.4% (37/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 12.5% (3/24) SCIE (MATERIALS SCIENCE, COATINGS & FILMS 분야) (JCR 2024)

(IF 상위 13.0% (3/23) SCIE (MATERIALS SCIENCE, COATINGS & FILMS 분야) (JCR 2023)

39) Muhammad Ismail, Sunghun Kim, Maria Rasheed, Chandreswar Mahata, Myounggon Kang, and Sungjun Kim, “Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing,” Journal of Alloys and Compounds, Vol. 1003, Article 175411, July, 2024.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2025)

(IF 상위 10.8% (11/97) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2024)

(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

38) Muhammad Ismail, Maria Rasheed, Yongjin Park, Sohyeon Lee, Chandreswar Mahata, Wonbo Shim, and Sungjun Kim, “Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition,” The Journal of Chemical Physics, Vol. 161, Article 134702, October, 2024.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

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(IF 상위 24.4% (10/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

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37) Eunjin Lim, Euncho Seo, and Sungjun Kim, “Influence of the TiN diffusion barrier on the leakage current and ferroelectricity in an Al-doped HfOx ferroelectric memristor and its application to neuromorphic computing,” Nanoscale, Vol. 16, pp. 19445-19452, September, 2024.

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36) Seongmin Kim, Jungang Heo, Sungjun Kim, and Min-Hwi Kim, “Dual functionality of NbOx memristors for synaptic and neuronal emulations in advanced neuromorphic systems,” Journal of Materials Chemistry C, Vol. 12, pp. 16294-16308, October, 2024.

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35) Dongyeol Ju, Jungwoo Lee, and Sungjun Kim, “Nociceptor-Enhanced Spike-Timing-Dependent Plasticity in Memristor with Coexistence of Filamentary and Non-Filamentary Switching,” Advanced Materials Technologies, Vol. 9, Issue 19, Article 2400440, October, 2024.

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34) Junwon Jang, Seongmin Kim, Suyong Park, Soomin Kim, Sungjun Kim, and Seongjae Cho, “Leaky 2T Dynamic Random-Access Memory Devices Based on Nanometer-Thick Indium-Gallium-Zinc-Oxide Films for Reservoir Computing,” ACS Applied Nano Materials, Vol. 7, pp. 22430-22435, October, 2024.

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33) Hyogeun Park and Sungjun Kim, “SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems,” Journal of Materials Chemistry C, Vol. 12, pp. 16551-16559, September, 2024.

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32) Chandreswar Mahata, Hyojin So, Dongyeol Ju, Muhammad Ismail, Sungjoon Kim, Chih-Chieh Hsu, Kyungchul Park, and Sungjun Kim, “Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition,” Nano Energy, Vol. 129, Article 110015, July, 2024.

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31) Seungjun Lee, Doohyung Kim, and Sungjun Kim, “Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing,” Ceramics International, Vol. 50, pp. 36495-36502, July, 2024.

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30) Junwon Jang, Suyong Park, Doohyung Kim, and Sungjun Kim, “Synaptic plasticity and associative learning in IGZO-based synaptic transistor,” Sensors and Actuators A: Physical, Vol. 376, Article 115641, June, 2024.

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29) Gyeongpyo Kim, Seoyoung Park, and Sungjun Kim, “Quantum Dots for Resistive Switching Memory and Artificial Synapse,” Nanomaterials, Vol. 14, Issue 19, Article 1575, September, 2024.

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28) Gyeongpyo Kim, Seoyoung Park, Minsuk Koo, and Sungjun Kim, “Oxygen-Plasma-Treated Al/TaOx/Al Resistive Memory for Enhanced Synaptic Characteristics,” Biomimetics, Vol. 9, Issue 9, Article 578, September, 2024.

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27) Dongyeol Ju, Subaek Lee, Jungwoo Lee, and Sungjun Kim, “On-receptor computing utilizing vertical-structured cost-effective memristor,” Journal of Alloys and Compounds, Vol. 998, Article 174926, September, 2024.

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26) Sungjoon Kim, Hyeonseung Ji, Kyungchul Park, Hyojin So, Hyungjin Kim, Sungjun Kim, and Woo Young Choi, “Memristive Architectures Exploiting Self-Compliance Multilevel Implementation on 1 kb Crossbar Arrays for Online and Offline Learning Neuromorphic Applications,” ACS Nano, Vol. 18, p. 25128, September, 2024.

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25) Minseo Noh, Dongyeol Ju, and Sungjun Kim, “Dynamic memristor array with multiple reservoir states for training efficient neuromorphic computing,” Journal of Materials Chemistry C, Vol. 12, pp. 13516–13524, September, 2024.

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(IF 상위 23.8% (45/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

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24) Dongyeol Ju, Minsuk Koo, and Sungjun Kim, “Implementation of 8-bit reservoir computing through volatile ZrOₓ-based memristor as a physical reservoir,” Nano Energy, Vol. 128, Article 109958, September, 2024.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

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(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

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23) Sarfraz Ali, Muhammad Hussain, Muhammad Ismail, Muhammad Waqas Iqbal, and Sungjun Kim, “Exploring the potential of TiO2/ZrO2 memristors for neuromorphic computing: Annealing strategy and synaptic characteristics,” Journal of Alloys and Compounds, Vol. 997, Article 174802, August, 2024.

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(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

22) Dongyeol Ju and Sungjun Kim, “Implementation of edge computing using HfAlOx-based memristor,” Journal of Alloys and Compounds, Vol. 997, Article 174804, August, 2024.

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(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

21) Dongyeol Ju, Yongjin Park, Minseo Noh, Minsuk Koo, and Sungjun Kim, “HfAlOx-based ferroelectric memristor for nociceptor and synapse functions,” The Journal of Chemical Physics, Vol. 161, Issue 8, August, 2024.

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20) Dongyeol Ju and Sungjun Kim, “Volatile tin oxide memristor for neuromorphic computing,” iScience, Vol. 27, Issue 8, 110479, 9 July 2024.

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19) Dongyeol Ju, Jungwoo Lee, and Sungjun Kim, “On-receptor computing with classical associative learning in semiconductor oxide memristors,” Nanoscale, Vol. 15, p. 15330, August, 2024.

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18) Dongyeol Ju and Sungjun Kim, “Spike-enhanced synapse functions of SnOx-based resistive memory,” Chaos, Solitons & Fractals, Vol. 185, Article 115169, August, 2024.

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17) Yongjin Park, Woohyun Park, and Sungjun Kim, “Enhancing ferroelectricity in HfAOx-based ferroelectric tunnel junctions: A comparative study of MFS and MFIS structures with ultrathin interfacial layers,” Ceramics International, Vol. 50, Issue 15, pp. 26849–26857, August, 2024.

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16) Junwon Jang, Jungwoo Lee, Jong-Ho Bae, Seongjae Cho, and Sungjun Kim, “InGaZnO-based synaptic transistor with embedded ZnO charge-trapping layer for reservoir computing,” Sensors and Actuators A: Physical, Vol. 373, Article 115405, August, 2024.

(IF = 2.3 (2023), 4.9 (2024), 5.1 (2025))

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(IF 상위 20.4% (16/76) SCIE (INSTRUMENTS & INSTRUMENTATION 분야) (JCR 2023)

15) Hyogeun Park, Dongyeol Ju, Chandreswar Mahata, Andrey Emelyanov, Minsuk Koo, and Sungjun Kim, “Long- and Short-Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO-Based Synaptic Device for Reservoir Computing,” Advanced Electronic Materials, Vol. 10, Issue 8, Article 2300911, August, 2024.

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(IF 상위 22.7% (43/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 23.7% (43/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

14) Hyojin So, Sungjun Kim, and Sungjoon Kim, “Self-rectifying NiOx/WOx heterojunction synaptic memristor for crossbar architectured reservoir computing system,” Journal of Alloys and Compounds, Vol. 1003, 175644, 1 October 2024.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

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13. Muhammad Ismail, Doohyung Kim, Eunjin Lim, Maria Rasheed, Chandreswar Mahata, Yeongkyo Seo, and Sungjun Kim, “Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiOxNy/SnOx Memristor for Neuromorphic Systems,” ACS Materials Letters, Vol. 6, Issue 8, pp. 3514–3522, 5 August 2024.

(IF = 9.9 (2023), 8.7 (2024), 8.6 (2025))

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(IF 상위 16.7% (77/461) SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

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12. Dongyeol Ju, Jungwoo Lee, Sungjun Kim, and Seongjae Cho, “Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing,” The Journal of Chemical Physics, Vol. 161, Issue 1, 014709, 7 July 2024.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

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(IF 상위 18.7% (8/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

11. Dongyeol Ju, Hyeonseung Ji, Jungwoo Lee, and Sungjun Kim, “Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system,” APL Materials, Vol. 12, Issue 7, 071121, 1 July 2024.

(IF = 5.3 (2023), 4.5 (2024), 4.5 (2025))

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(IF 상위 36.66% (169/461) SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 27.79% (122/439) SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

10. Jungwoo Lee, Seungjun Lee, Jihyung Kim, Andrey Emelyanov, and Sungjun Kim, “Temporal data learning of ferroelectric HfAlOx capacitors for reservoir computing system,” Journal of Alloys and Compounds, Vol. 990, 174371, 30 June 2024.

(IF = 5.8 (2023), 6.3 (2024), 6.7 (2025))

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(IF 상위 8.3% (8/90) SCIE (METALLURGY & METALLURGICAL ENGINEERING 분야) (JCR 2023)

9. Dongyeol Ju and Sungjun Kim, “Temporal multibit operation of dynamic memristor for reservoir computing,” Results in Physics, Vol. 61, 107796, June 2024.

(IF = 4.4 (2023), 4.6 (2024))

(IF 상위 20.18% (23/114) SCI (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2024))
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8. Yoonseok Lee, Yifu Huang, Yao Feng Chang, Sung Jin Yang, Nicholas D. Ignacio, Shanmukh Kutagulla, Sivasakthya Mohan, Sunghun Kim, Jungwoo Lee, Deji Akinwande, and Sungjun Kim, “Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems,” ACS Nano, Vol. 18, Issue 22, pp. 14327–14338, 20 May 2024.

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7. Eunjin Lim, Dongyeol Ju, Jungwoo Lee, Yongjin Park, Min Hwi Kim, and Sungjun Kim, “Artificial Neural Network Classification Using Al-Doped HfOx-Based Ferroelectric Tunneling Junction with Self-Rectifying Behaviors,” ACS Materials Letters, Vol. 6, Issue 6, pp. 2320–2328, 13 May 2024.

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(IF 상위 12.3% (54/439) SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

6. Dongyeol Ju, Jungwoo Lee, and Sungjun Kim, “Nociceptor-Enhanced Spike-Timing-Dependent Plasticity in Memristor with Coexistence of Filamentary and Non-Filamentary Switching,” Advanced Materials Technologies, Vol. 9, Issue 19, 2400440, 19 May 2024.

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(IF 상위 26.46% 122/461 SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 22.78% 100/439 SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))

5. Dongyeol Ju, Sungjoon Kim, Kyungchul Park, Jungwoo Lee, Minsuk Koo, and Sungjun Kim, “Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor,” ACS Applied Materials & Interfaces, Vol. 16, Issue 19, pp. 24929–24942, 15 May 2024.

(IF = 8.5 (2023), 8.2 (2024), 7.8 (2025))

(IF 상위 22.4% (106/472) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025)

(IF 상위 17.9% (83/461) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024)

(IF 상위 15.4% (68/439) SCIE (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023)

Google scholar 기준 Materials Enginnering 분야 10위 저널

(https://scholar.google.co.kr/citations?view_op=top_venues&hl=ko&vq=chm)

4. Juri Kim, Subaek Lee, Yeongkyo Seo, and Sungjun Kim, “Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems,” The Journal of Chemical Physics, Vol. 160, Issue 14, 144703, 14 April 2024.

(IF = 3.1 (2023), 3.1 (2024), 3.7 (2025))

(IF 상위 19.7% (8/38) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2025)

(IF 상위 24.4% (10/39) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2024)

(IF 상위 18.7% (8/40) SCIE (PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 분야) (JCR 2023)

3. Gyeongpyo Kim, Youngboo Cho, and Sungjun Kim, “Short-term memory characteristics of TiN/WOX/FTO-based transparent memory device,” Chinese Journal of Physics, Vol. 88, pp. 1044–1052, April 2024.

(IF = 4.6 (2023), 4.6 (2024), 5.3 (2025))

(IF 상위 16.07% (18/112) SCI (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 20.18% (23/114) SCI (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 18.75% (21/112) SCI (PHYSICS, MULTIDISCIPLINARY 분야) (JCR 2023))

2. Faisal Ghafoor, Muhammad Ismail, Honggyun Kim, Muhammad Ali, Shania Rehman, Bilal Ghafoor, Muhammad Asghar Khan, Harshada Patil, Sungjun Kim, Muhammad Farooq Khan, and Deok-Kee Kim, “Realization of future neuro-biological architecture in power efficient memristors of Fe3O4/WS2 hybrid nanocomposites,” Nano Energy, Vol. 122, 109272, pp. 1–13, April 2024.

(IF = 16.8 (2023), 17.1 (2024), 16.7 (2025))

(IF 상위 5.5% (11/191) SCIE (PHYSICS, APPLIED 분야) (JCR 2025)

(IF 상위 5.1% (10/187) SCIE (PHYSICS, APPLIED 분야) (JCR 2024)

(IF 상위 5.3% (10/179) SCIE (PHYSICS, APPLIED 분야) (JCR 2023)

Google scholar 기준 Nanotechnology Category 분야 2위 저널

(https://scholar.google.com/citations?hl=en&view_op=top_venues&vq=chm_nanotechnology)

1. Juri Kim, Yongjin Park, Jungwoo Lee, Eunjin Lim, Jung Kyu Lee, and Sungjun Kim, “Impact of HfO2 Dielectric Layer Placement in Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junctions for Neuromorphic Applications,” Advanced Materials Technologies, Vol. 9, Issue 10, 2400050, 8 March 2024.

(IF = 6.4 (2023), 6.2 (2024), 6 (2025))

(IF 상위 30.51% 144/472 SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2025))

(IF 상위 26.46% 122/461 SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2024))

(IF 상위 22.78% 100/439 SCI (MATERIALS SCIENCE, MULTIDISCIPLINARY 분야) (JCR 2023))