Journal

Selected Articles

2025

Synergistic multi-wavelength optical stimulation enhances synaptic dynamics and reservoir computing performance in ferroelectric thin-film transistors

S Lee, H Jang, G An, S Ju, S Kim

Nano Energy, 111395

Optically Tunable Synaptic Plasticity and Memory Emulation in Au-Nanoparticle Enhanced HfTiOx/Al2O3-Based Photonic Memristors

C Mahata, M Ismail, H Kim, S Kim

Advanced Functional Materials, e10663

Fully CMOS Compatible Charge Trap Memory‐Based Reservoir Computing System

S Park, D Ryu, S Kim, WY Choi, S Kim

Advanced Materials Technologies, e00858

Enabling High‐Accuracy Neuromorphic Computing via Precise Synaptic Weight Tuning in HfOx‐Based 3D Vertical Memristors

N Kim, J Park, H Na, S Kim

Advanced Materials Technologies, e00651

Integrated Design of Electrically Configurable Ferroelectric and Redox-Based Memristors for Hardware-Implemented Reservoir Computing

JK Lee, Y Park, E Seo, JH Lee, S Kim, S Kim

Advanced Science, e05688

Energy Efficient Hybrid Reservoir Computing Using Hf0.5Zr0.5O2 Ferroelectric Thin‐Film Transistors with an Integrated Optically and Electrically Synaptic Functions

S Lee, G An, D Kim, H Lee, S Kim, TH Kim

Small, 2501276

Synaptic metaplasticity and associative learning in low-power neuromorphic computing using W-diffused BaTiO₃ memristors

M Ismail, H Na, M Rasheed, C Mahata, Y Kim, S Kim

Nano Energy, 111276

Reset-dominant accurate synaptic weight mapping in passive memristor arrays for energy-efficient spiking neural networks

Y Byun, G Kim, S Kim, S Kim

Nano Energy, 111261

HfAlOx-based optical ferroelectric memristor with transparent electrode for RGB color image classification via physical reservoir

W Park, G Kim, H Chae, S Lee, S Kim

Nano Energy 142, 111190

Ferroelectric memristor crossbar arrays for highly integrated neuromorphic computing system

Y Park, E Lim, S Lee, V Georgiev, S Kim, S Kim

Nano Energy 141, 111137

InGaZnO Optoelectronic Synaptic Transistor for Reservoir Computing and LSTM‐Based Prediction Model

S Park, S Kim, S Kim, K Park, D Ryu, S Kim

Advanced Optical Materials, 2500634

Enhanced Reliability and Controllability in Filamentary Oxide‐Based 3D Vertical Structured Resistive Memory with Pulse Scheme Algorithm for Versatile Neuromorphic Applications

H Na, S Kim

Advanced Functional Materials, 2500956

Fully hardware-oriented physical reservoir computing using 3D vertical resistive switching memory with different bottom electrodes

J Park, G Kim, S Kim

Materials Horizons

Depolarization Field Controllable HfZrOx-Based Ferroelectric Capacitors for Physical Reservoir Computing System

E Seo, E Lim, J Shin, S Kim

ACS Applied Materials & Interfaces

Self‐Rectifying Volatile Memristor for Highly Dynamic Functions

D Ju, M Noh, S Lee, G Kim, J Park, S Kim

Advanced Functional Materials, 2423880

3D Vertical Ferroelectric Capacitors with Excellent Scalability

E Lim, Y Park, C Youn, S Kim

Nano Letters

Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors

D Kim, D Lee, W Kim, HJ Lee, C Kim, KH Lee, M Jung, JE Yang, Y Jang, ...

ACS Applied Materials & Interfaces

Metaplasticity and Reservoir Computing in Bio‐Realistic Artificial Synapses with Embedded Localized Au‐Nanoparticle‐Based Memristors

C Mahata, G Kim, H So, M Ismail, CC Hsu, S Kim, S Kim

Advanced Functional Materials, 2416862

Precise weight tuning in quantum dot-based resistive-switching memory for neuromorphic systems

G Kim, D Yoo, H So, S Park, S Kim, MJ Choi, S Kim

Materials Horizons

Dynamic FeO x/FeWO x nanocomposite memristor for neuromorphic and reservoir computing

M Ismail, M Rasheed, Y Park, J Lee, C Mahata, S Kim

Nanoscale

Self‐Rectifying Short‐Term Memory Phenomena Through Integration of TiOx Oxygen Reservoir and Al2O3 Barrier Layers for Neuromorphic System

H Ji, S Kim, S Kim

Advanced Materials Technologies, 2400895

Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems

S Kim, H Ji, S Kim, WY Choi

Advanced Electronic Materials, 2400282

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Y Lee, B Jeon, Y Cho, J Kim, W Shim, S Kim

Advanced Materials Technologies, 2400585

Mimicking Classical Conditioning of Fear Using a Dynamic Synaptic Memristor

D Ju, S Kim

Advanced Electronic Materials, 2400493

Exploitation of temporal dynamics and synaptic plasticity in multilayered ITO/ZnO/IGZO/ZnO/ITO memristor for energy-efficient reservoir computing

M Ismail, S Lee, M Rasheed, C Mahata, S Kim

Journal of Materials Science & Technology

Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

W Chung, D Kim, J Kim, J Park, S Kim, S Lee

Journal of Materials Science & Technology

2024

Dynamic FeO x/FeWO x nanocomposite memristor for neuromorphic and reservoir computing

M Ismail, M Rasheed, Y Park, J Lee, C Mahata, S Kim

Nanoscale

Reservoir Computing System with Diverse Input Patterns in HfAlO-Based Ferroelectric Memristor

D Ju, M Noh, G Kim, Y Park, S Lee, S Kim

ACS Applied Materials & Interfaces

Investigation of the Versatile Utilization of Three-Dimensional Vertical Resistive Random-Access Memory in Neuromorphic Computing

D Ju, M Noh, S Lee, J Lee, S Kim, JK Lee

ACS Applied Materials & Interfaces

Online and offline learning using fading memory functions in HfSiOx-based ferroelectric tunnel junction

J Lee, C Youn, J Heo, S Kim

Journal of Materials Chemistry C

Leaky 2T Dynamic Random-Access Memory Devices Based on Nanometer-Thick Indium–Gallium− Zinc-Oxide Films for Reservoir Computing

J Jang, S Kim, S Park, S Kim, S Kim, S Cho

ACS Applied Nano Materials

Dual functionality of NbO x memristors for synaptic and neuronal emulations in advanced neuromorphic systems

S Kim, J Heo, S Kim, MH Kim

Journal of Materials Chemistry C

Influence of TiN diffusion barrier on the leakage current and ferroelectricity in Al-doped HfOx ferroelectric tunneling junction and its application to neuromorphic computing

E Lim, E Seo, S Kim

Nanoscale

Cost‐Effective and Fully Hardware‐Oriented Reservoir Computing Based on IGZO/HZO Ferroelectric Thin‐Film Transistor with Electrically and Optically Distinguishable States

D Kim, S Lee, Y Lee, Y Park, J Lee, S Kim

Advanced Functional Materials, 2409095

SiN-based optoelectronic synaptic devices: enhancing future cognitive computing systems

H Park, S Kim

Journal of Materials Chemistry C

Versatile NbOx‐Based Volatile Memristor for Artificial Intelligent Applications

D Ju, S Kim

Advanced Functional Materials, 2409436

Configurable Synaptic and Stochastic Neuronal Functions in ZnTe-Based Memristor for an RBM Neural Network

J Heo, S Kim, S Kim, MH Kim

Advanced Science, 2405768

Memristive Architectures Exploiting Self-Compliance Multilevel Implementation on 1 kb Crossbar Arrays for Online and Offline Learning Neuromorphic Applications

S Kim, H Ji, K Park, H So, H Kim, S Kim, WY Choi

ACS nano

Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition

C Mahata, H So, D Ju, M Ismail, S Kim, CC Hsu, K Park, S Kim

Nano Energy, 110015

On-receptor computing with classical associative learning in semiconductor oxide memristors

D Ju, J Lee, S Kim

Nanoscale

Dynamic memristor array with multiple reservoir states for training efficient neuromorphic computing

M Noh, D Ju, S Kim

Journal of Materials Chemistry C

Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiOxNy/SnOx Memristor for Neuromorphic Systems

M Ismail, D Kim, E Lim, M Rasheed, C Mahata, Y Seo, S Kim

ACS Materials Letters 6, 3514-3522

Effect of neural firing pattern on NbOx/Al2O3 memristor-based reservoir computing system

D Ju, H Ji, J Lee, S Kim

APL Materials 12 (7)

Nociceptor‐Enhanced Spike‐Timing‐Dependent Plasticity in Memristor with Coexistence of Filamentary and Non‐Filamentary Switching

D Ju, J Lee, S Kim

Advanced Materials Technologies, 2400440

Implementation of 8-bit reservoir computing through volatile ZrOx-based memristor as a physical reservoir

D Ju, M Koo, S Kim

Nano Energy, 109958

Sophisticated Conductance Control and Multiple Synapse Functions in TiO2‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems

H So, H Ji, S Kim, S Kim

Advanced Functional Materials, 2405544

Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems

Y Lee, Y Huang, YF Chang, SJ Yang, ND Ignacio, S Kutagulla, S Mohan, ...

ACS nano

Artificial Neural Network Classification Using Al-Doped HfOx-Based Ferroelectric Tunneling Junction with Self-Rectifying Behaviors

E Lim, D Ju, J Lee, Y Park, MH Kim, S Kim

ACS Materials Letters 6, 2320-2328

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

D Ju, S Kim, K Park, J Lee, M Koo, S Kim

ACS Applied Materials & Interfaces 16 (19), 24929-24942

Realization of future neuro-biological architecture in power efficient memristors of Fe3O4/WS2 hybrid nanocomposites

F Ghafoor, M Ismail, H Kim, M Ali, S Rehman, B Ghafoor, MA Khan, H Patil, ...

Nano Energy 122, 109272

Long‐and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing

H Park, D Ju, C Mahata, A Emelyanov, M Koo, S Kim

Advanced Electronic Materials, 2300911

Impact of HfO2 Dielectric Layer Placement in Hf0. 5Zr0. 5O2‐Based Ferroelectric Tunnel Junctions for Neuromorphic Applications

J Kim, Y Park, J Lee, E Lim, JK Lee, S Kim

Advanced Materials Technologies, 2400050

Artificial synapses based on 2D-layered palladium diselenide heterostructure dynamic memristor for neuromorphic applications

C Mahata, D Ju, T Das, B Jeon, M Ismail, S Kim, S Kim

Nano Energy 120, 109168

Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array

J Kim, S Lee, S Kim, S Yang, JK Lee, TH Kim, M Ismail, C Mahata, Y Kim, ...

Advanced Functional Materials, 2310193

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer

SJ Yang, L Liang, Y Lee, Y Gu, J Fatheema, S Kutagulla, D Kim, M Kim, ...

ACS nano 18 (4), 3313-3322

Synaptic Properties and Short‐Term Memory Dynamics of TiO2/WOx Heterojunction Memristor for Reservoir Computing

H So, J Lee, C Mahata, S Kim, S Kim

Advanced Materials Technologies, 2301390

2023

Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems

J Heo, Y Cho, H Ji, MH Kim, JH Lee, JK Lee, S Kim

APL Materials 11 (11)

Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineering

J Kim, JH Choi, S Kim, C Choi, S Kim

Carbon 215, 118438

Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing

M Ismail, M Rasheed, S Kim, C Mahata, M Kang, S Kim

ACS Materials Letters 5, 3080-3092

Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications

M Ismail, M Rasheed, C Mahata, M Kang, S Kim

Nano Convergence 10 (1), 1-15

Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O Plasma

JK Lee, O Kwon, B Jeon, S Kim

IEEE Transactions on Electron Devices

Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarization

S Kim, J Kim, D Kim, J Kim, S Kim

APL Materials 11 (10)

Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices

C Mahata, J Pyo, B Jeon, M Ismail, J Moon, S Kim

Advanced Composites and Hybrid Materials 6 (4), 1-14

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

S Yang, T Kim, S Kim, S Kim, TH Kim, M Ismail, C Mahata, S Kim, S Cho

Advanced Materials Interfaces 10 (21), 2300290

Effect of interfacial SiO2 layer thickness on the memory performances in HfAlOx-based ferroelectric tunnel junction for neuromorphic system

Y Park, J Kim, S Kim, D Kim, W Shim, S Kim

Journal of Materials Chemistry C

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems

S Yang, T Kim, S Kim, D Chung, TH Kim, JK Lee, S Kim, M Ismail, ...

Nanoscale 15 (32), 13239-13251

Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

J Kim, D Kim, KK Min, M Kraatz, T Han, S Kim

Advanced Intelligent Systems, 2300080

Ferroelectric synaptic devices based on CMOS-compatible HfAlO x for neuromorphic and reservoir computing applications

D Kim, J Kim, S Yun, J Lee, E Seo, S Kim

Nanoscale 15 (18), 8366-8376

2022

Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM

J Park, TH Kim, O Kwon, M Ismail, C Mahata, Y Kim, S Kim, S Kim

Nano Energy 104, 107886

Prospects and applications of volatile memristors

D Kim, B Jeon, Y Lee, D Kim, Y Cho, S Kim

Applied Physics Letters 121 (1), 010501

Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage

M Ismail, H Abbas, C Mahata, C Choi, S Kim

Journal of Materials Science & Technology 106, 98-107

Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing

M Ismail, U Chand, C Mahata, J Nebhen, S Kim

Journal of Materials Science & Technology 96, 94-102

2021

Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing

J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim

ACS Applied Materials & Interfaces

Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles

C Mahata, H Algadi, M Ismail, D Kwon, S Kim

Journal of Materials Science & Technology

2020

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ...

ACS Applied Materials & Interfaces 12 (30), 33908-33916

2019

Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...

Nanoscale 11 (1), 237-245

2018

Scaling effect on silicon nitride memristor with highly doped Si substrate

S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...

Small 14 (19), 1704062

2017

Analog synaptic behavior of a silicon nitride memristor

S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park

ACS applied materials & interfaces 9 (46), 40420-40427