Optoelectronics Works
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Design Analysis of Perfect Reflector (Bragg Reflector)
This project revolves around the design analysis of a perfect reflector, specifically a Bragg reflector, utilizing Lumerical FDTD software. Remarkably, I achieved a complete absence of absorbance by considering materials with zero extinction coefficients. Through meticulous design considerations, Saklain successfully obtained 100% reflectance within a specific bandwidth by employing ten periodic arrays of materials with refractive indices of 2.35 and 1.46. Additionally, I explored the impact of using materials with refractive indices of 1.95 and 1.46 within the same periodic arrays. In this case, he achieved a maximum reflectance of 100%, albeit with a narrower bandwidth. Utilizing Lumerical FDTD software, Saklain conducted analysis with six periodic arrays, a reflectance of approximately 92% was achieved for the materials with refractive indices of 1.95 and 1.46.
Data Validation of a Published Paper
The objective of this project was to validate the accuracy of the simulation technique by reproducing the results of a published paper using Lumerical FDTD. The simulation was conducted to assess the correctness of the technique employed in the paper. Encouragingly, the simulated results obtained in this project exhibited a perfect match with the reference paper, showcasing suitable peak values at specific wavelengths.
Mohammad Muntasir Hassan, Sameia Zaman, M Hasanuzzaman, Md Zunaid Baten, "Coscinodiscus diatom inspired bi-layered photonic structures with near-perfect absorptance Part II: hexagonal vs. square lattice-based structures", Optics Express 30, 29352-29364 (2022)
Ajanta Saha, Eymana Maria, and Md Zunaid Baten , "Spectra dependent photonic structure design for energy harvesting by indoor photovoltaic devices", AIP Advances 12, 055006 (2022) [External link]
Absorbance Variations in Different Patterns -without FTO, Ag
In this project, the focus lies on exploring the impact in structures without the presence of both fluorine-doped tin oxide (FTO) and silver layers. The unpatterned device and the devices labeled 1, 2, and 3 represent diverse structures, such as bulk and nanohole incorporation within a single layer, as documented in the reference paper. The obtained results serve as both a validation of the published work and a means to assess the influence in FTO-free configurations.
Numerical Analysis of Irradiance of Black Body,Shockley–Queisser limit
In this project the solar irradiance is modeled and plotted for two different sun temperature to see the impact of the temperature of solar irradiance. It is evident from the plot of solar irradiance at two distinct temperatures, 5760 K and 5500 K, that solar irradiance decreases as solar temperature decreases. Therefore, with higher values of solar temperature, the total incident power is greater. The Shockley-Queisser limit is also plotted for various sun temperatures, correlating it with different bandgaps to analyze the optimal bandgap for achieving maximum efficiency.
Carrier Density, Lifetime Effect on net SRH- Recombination
The SRH-Recombination and it's dependence on carrier properties, such as carrier density, carrier life time etc is investigated in this project. The net recombination rate becomes maximum when the total carrier densities of both types become equal. The outcome is also influenced by the lifespan of each carrier. I've drawn the curve for identical carrier lifetimes for the two carriers as well as when one carrier has a carrier lifespan that is 10 times that of the other. The outcome demonstrates that the largest recombination peak changes to the left and vice versa when the lifetime of a hole is 10 times that of an electron.
Analysis of Quantum Efficiency of Solar Cell
This project's main target was to investigate the Quantum Efficiency of Solar cell and it's dependence on different parameters. In the figure 1, cell's P layer is much higher due to emitter side and since the n layer is situated at the backend, so the QE increases from 500nm and so on. The SCR is situated at the middle according to the book. And Also the cut-off region is after 900 nm which is the cut-off wavelength of silicon. The QE curve begins to deteriorate as long as the thickness of xp continues to rise, but at the conclusion of the curve they became aligned according to figure 2. Figure 3 and figure 4 dipict that, The increment of surface recombination velocities increment makes the QE curve begins to deteriorate.
Figure 1: Plot of Quantum Efficiency vs Wavelength for Different Layers
Figure 2: Plot of Quantum Efficiency vs Wavelength for different values of Depth of P Region
Figure 3: Plot of Quantum Efficiency vs Wavelength for different values of Sn
Figure 4: Plot of Quantum Efficiency vs Wavelength for different values of Sp
Design Analysis of Anti-Reflection Coating
In this project, the focus was on designing and analyzing an anti-reflection coating. The reflectivity curve was plotted across different wavelengths for various angles of incidence. Notably, it was observed that at specific angular incidences, the reflectivity reached zero for particular wavelengths, aligning with our design objectives. At normal incidence, around 700nm, the reflectance curve achieved zero reflectivity. For an incidence angle of 30 degrees, the cutoff wavelength was found to be 680nm. Furthermore, at an incident angle of 60 degrees, the reflectance became zero at 500nm. The consecutive refractive indices considered for this analysis were 0 and 3.88.
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