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29. Z.-L. Tseng, K. Uma, C.-H. Wu, T.-W. Shen, R. Khosla, X.-J. Guan, W.-K. Hung, "Diverse Bimetallic MOF Polymorphs for the Degradation of Pollutants/Antibiotics and Quantum Dot Integration for Enhanced WLED Performance," Alexandria Engineering Journal, vol. 130, pp. 35, 2025.
for details view doi: 10.1016/j.aej.2025.09.006
28. A. K. Yadav, S. Anand, and R. Khosla, "Impact of Gate Dielectric and Doping Concentration on the Si Fork-Sheet FET for Next Generation CMOS Technology," Materials Science & Engineering B, vol. 322 , pp. 118655, 2025.
for details view doi: 10.1016/j.mseb.2025.118655
27. S. Mourya, K. Uma, S. K. Sharma, T. -W. Shen, R. Khosla, L. -C. Chen, Z. L. Tseng, "Unveiling DDAB-Driven Surface Passivation and Charge Dynamics in CsPb(Br₀.₈I₀.₂)₃ Quantum Dots: Interactions with Anthraquinone and Benzoquinone," Materials Science in Semiconductor Processing, vol. 200, pp. 109901, 2025.
for details view doi: 10.1016/j.mssp.2025.109901
26. S. Mattaparthi, S. K. S. Bonal, Z. L. Tseng, and R. Khosla, "Numerical assessment of CsXY3 (X=Ge, Sn; Y=Cl, Br, I) perovskites unified with NiO & Zn(O0.25S0.75) for solar cell applications," physica status solidi (a) applications and materials science, vol. , pp. 2500209, 2025.
for details view doi: 10.1002/pssa.202500209
25. A. K. Yadav, C. V. Kumar, G. S. Baghel, and R. Khosla, "Performance and Reliability Assessment of Source Work Function Engineered Charge Plasma based Al/HfO2/Al2O3/Ge, Double Gate TFET," Engineering Research Express., vol. 6, pp. 025323, 2024.
for details view doi: 10.1088/2631-8695/ad3c14
24. A. K. Yadav, S. P. Malik, G. S. Baghel, and R. Khosla, "Influence of Charge Traps on Charge Plasma-Germanium Double-Gate TFET for RF/Analog & low-power switching applications," Microelectronic Reliability, vol. 153, pp. 115312, 2024.
for details view doi: 10.1016/j.microrel.2023.115312
23. C. V. Kumar, A. K. Yadav, A. Deka, and R. Khosla, "Investigating the Effects of Doping Gradient, Trap Charges, and Temperature on Ge Vertical TFET for Low Power Switching and Analog Applications," Material Science and Engineering B, vol.299, pp.116996, 2024.
for details view doi: 10.1016/j.mseb.2023.116996
22. S. Mattaparthi, D. K. Sinha, A. Bhura, and R. Khosla, "Design of an eco-friendly perovskite Au/NiO/FASnI3/ZnO0.25S0.75/FTO, device structure for solar cell applications using SCAPS-1D," Results in Optics, vol. 12, pp. 100444, 2023.
for details view doi: 10.1016/j.rio.2023.100444
21. S. Sharma, S. Das, R. Khosla, H. Shrimali and S. K. Sharma, "Two-Dimensional Van Der Waals Hafnium Disulfide and Zirconium Oxide-Based Micro-Interdigitated Electrodes Transistors," IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 1520-1526, 2023.
for details view doi: 10.1109/TED.2022.3202510
20. S. Choudhary, D. Schwarz, H. S. Funk, D. Weißhaupt, R. Khosla, S. K. Sharma, and J. Schulze, A Steep Slope MBE Grown thin p-Ge Channel FETs on Bulk Ge-on-Si using HZO internal Voltage Amplification, IEEE Transactions on Electron Devices, vol. 69, pp.2725, 2022.
for details view doi: 10.1109/TED.2022.3161857.
19. S. Rathaur, R. Khosla and S. K. Sharma, Metal (Pt) / Ferroelectric (SrBi2Ta2O9) / Insulator (La2O3) / Semiconductor (Si), MFIS structures for non-volatile memory applications, Appl. Phys. Lett., vol. 119, pp. 063505, 2021
for details view doi: 10.1063/5.0055792
18. R. Khosla and S. K. Sharma, Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices, ACS Applied Electronic Materials, vol. 3 (7), pp. 2862-2897, 2021
for details view doi: 10.1021/acsaelm.0c00851
17. R. Khosla, D. Schwarz, H. S. Funk, K. Guguieva, and J. Schulze, High-quality Remote Plasma Enhanced Atomic Layer Deposition of Aluminum Oxide thin films for nanoelectronics applications, Solid State Electronics, vol. 185, pp. 108027, 2021
for details view doi: 10.1016/j.sse.2021.108027
16. S. Choudhary, D. Schwarz, H. S. Funk, R. Khosla, S. K. Sharma and J. Schulze, "Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress," IEEE Transactions on Nanotechnology, vol. 20, pp. 346-355, 2021.
for details view doi: 10.1109/TNANO.2021.3069820
15. M. Jangra, D. S. Arya, R. Khosla, and S. K. Sharma, "Maskless lithography: an approach to SU-8 based sensitive and high-g Z-axis polymer MEMS accelerometer", Microsyst Technol, vol. 27, pp. 2925–2934, 2021
for details view doi: https://doi.org/10.1007/s00542-021-05217-0
14. P. P. Goswami, R. Khosla, and B. Bhowmick, "RF analysis and temperature characterisation of pocket doped L-shaped gate Tunnel FET," Applied Physics A, vol. 125, pp. 733, 2019.
for details view doi: 10.1007/s00339-019-3032-8
13. S. Sharma, S. Das, R. Khosla, H. Shrimali and S. K. Sharma, "Realization and Performance Analysis of Facile-Processed µ-IDE-Based Multilayer HfS2/HfO2 Transistors," IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 3236-3241, 2019.
for details view doi: 10.1109/TED.2019.2917323
12. S. Sharma, S. Das, R. Khosla, S. K. Sharma, and H. Shrimali, "Highly UV sensitive Sn Nanoparticles blended with polyaniline onto Micro-Interdigitated Electrode Array for UV-C detection applications," Journal of Materials Science: Materials in Electronics, vol. 30, pp. 7534, 2019.
for details view doi: 10.1007/s10854-019-01067-9
11. S. Sharma, R. Khosla, S. Das, H. Shrimali, and S. K. Sharma, "High Performance CSA-PANI based Organic Phototransistor by Elastomer Gratings," Organic Electronics, vol. 57, pp. 14-20, 2018.
for details view doi: 10.1016/j.orgel.2018.02.031
10. R. Khosla and S. K. Sharma, "Frequency Dispersion and Dielectric Relaxation in Post Deposition Annealed high-κ Erbium Oxide (Er2O3) Metal-Oxide-Semiconductor Capacitors," Journal of Vacuum Science & Technology B, vol. 36, no. 1, pp. 012201, 2018.
for details view doi: 10.1116/1.4995809
9. J. S. Malhotra, A. K. Singh, R. Khosla, S. K. Sharma, G. Sharma, and S. Kumar, "Investigations on structural, optical and magnetic properties of Fe and Dy co-doped ZnO nanoparticles," Journal of Materials Science: Materials in Electronics, vol. 29, pp. 3850, 2017.
for details view doi: 10.1007/s10854-017-8321-4
8. S. Sharma. R. Khosla, H. Shrimali, and S. K. Sharma, "Fluorine-Chlorine co-doped TiO2/CSA doped Polyaniline heterostructure for UV detection applications," Sensor and Actuators A, vol. 261, pp. 94, 2017.
for details view doi: 10.1016/j.sna.2017.04.043
7. P. Kumar, R. Khosla, M. Soni, D. Deva and S. K. Sharma, “A highly sensitive, flexible SERS sensor for Malachite green detection based on Ag decorated microstructured PDMS substrate fabricated from Taro leaf as template,” Sensors & Actuators B, vol. 246, pp. 477, 2017.
for details view doi: doi.org/10.1016/j.snb.2017.01.202
6. R. Khosla, E. G. Rolseth, P. Kumar, S. S. Vadakupudhupalayam, S. K. Sharma and J. Schulze, "Charge Trapping Analysis of Metal/Al2O3/SiO2/Si, Gate Stack for Emerging Embedded Memories," IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 80-89, 2017.
for details view doi: 10.1109/TDMR.2017.2659760
5. P. Kumar, R. Khosla, and S. K. Sharma, "Nanoscale investigations: Surface potential of rare-earth oxide (Re2O3) thin films by kelvin probe force microscopy for next generation CMOS technology," Surfaces and Interfaces, vol. 4, pp. 69, 2016.
for details view doi: 10.1016/j.surfin.2016.08.003
4. M. Soni, T. Arora, R. Khosla, P. Kumar, A. Soni and S. K. Sharma, "Integration of Highly Sensitive Oxygenated Graphene With Aluminum Micro-Interdigitated Electrode Array Based Molecular Sensor for Detection of Aqueous Fluoride Anions," IEEE Sensors Journal, vol. 16, no. 6, pp. 1524-1531, 2016.
for details view doi: 10.1109/JSEN.2015.2505782
3. R. Khosla, P. Kumar, and S. K. Sharma, "Charge Trapping and Decay Mechanism in Post Deposition Annealed Er2O3 MOS Capacitors by Nanoscopic and Macroscopic Characterization," IEEE Transactions on Device and Materials Reliability, vol.15, no.4, pp. 610-616, 2015.
for details view doi: 10.1109/TDMR.2015.2498310
2. D. K. Sharma, R. Khosla and S. K. Sharma, "Multilevel metal/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si for next generation FeRAM technology node," Solid-State Electronics, vol. 111, pp. 42, 2015.
for details view doi: 10.1016/j.sse.2015.04.006
1. R. Khosla, D. K. Sharma, and S. K. Sharma, "Effect of electrical stress on Au/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors," Appl. Phys. Lett., vol. 105, pp. 152907, 2014.
for details view doi: 10.1063/1.4897952
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