Novel Device Design & Technology Approach to address Performance & Reliability trade-offs in p-GaN gated AlGaN/GaN HEMTs
Novel Device Design & Technology Approach to address Performance & Reliability trade-offs in p-GaN gated AlGaN/GaN HEMTs
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Goal- Through this project, we follow a co-design approach to solve performance and reliability tradeoffs in E-mode pGaN gated AlGaN/GaN HEMTs. The methodology involves explorations of the interplay between technology and device architecture with a goal to maximize device’s reliability limits and performance, while probing the root cause of various rate limiters.
Institution- IISc Bangalore
Ongoing
Development and Augmentation of the Industry Standard ASM-GaN-HEMT Model for State-of-the-art Integrated Circuit Design
Development and Augmentation of the Industry Standard ASM-GaN-HEMT Model for State-of-the-art Integrated Circuit Design
Goal- Through this DST-SERB funded project, we aim to work on gap areas of the Industry Standard ASM-GaN Model and enhance its functionality for GaN based IC Design.
Date: 30 December 2019 - 30 December 2021
Institution- NIT Srinagar
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