Key Objectives -

• Improved e-mode HEMT device design using the co-design approach while using detailed process splits based on physical insights developed from detailed experimentation and computational modeling.

• To achieve a deeper understanding of e-mode GaN HEMT performance and reliability trade-offs & challenges.

• To develop design guidelines for high performance and high-reliability e-mode HEMT devices.

• To develop novel gate-stack and passivation designs for development of robust e-mode GaN HEMTs for power applications

• To understand the role of buffer and Metal/GaN interface properties, using various design architectures like SBDs to understand performance and reliability trade-offs.