Journals
Navneet Thakur, Dipanwita Aich, Kanchan S. Rana, Ranie S. Jeyakumar, Swaroop Ganguly, Apurba N. Bhattacharya, and Dipankar Saha "Electrically Injected InGaN/GaN micro-Light Emitting Diodes: Size-dependent diode characteristics and recombination dynamics," Applied Physics Letters
Harshitha Gangu, Aakash Deshpande, Sai Shubham, Harsh Kakadiya, Karan Jaiswal, Megha S, Ranie S Jeyakumar, Marco A Villena, Gaurav Thareja, Laxmeesha Somappa, Veeresh Deshpande, "3D MIGCIM: A Material-Device-Circuit Co-Design for 3D Monolithic Integrated 4T2C ITO Gain Cell Compute-In-Memory on 2 nm GAA CMOS," Under Review
Ranie S. Jeyakumar, Swaroop Ganguly, and Dipankar Saha, "Physics-Based Unified Analytical Model Capturing the Effect of Bulk and Interfacial Trapping Kinetics in AlGaN/GaN Heterostructure on Dynamic On-resistance in High Electron Mobility Transistors," IRPS 2026 (Accepted)
Ranie S. Jeyakumar, Swaroop Ganguly, and Dipankar Saha, "Physics-based unified analytical model capturing the transport and trapping mechanisms of electrons and holes in GaN-based heterostructures under a high substrate bias,'' APL Electronic Devices (Link)
Ranie S. Jeyakumar*, S. K. Pradhan*, V. K. Shukla, K. Saha, P. Rai, S. Ganguly, and D. Saha, “Enhanced Threshold Voltage and Improved Sub-threshold Swing using NiOX/ITO Reverse Bias Gated Diamond pMOS,” Physica Status Solidi- Rapid Research Letters (Link)
Ranie S. Jeyakumar, J.J. Jerry, Swaroop Ganguly, and Dipankar Saha “Analytical Model and Experimental Validation of Critical Dependency of pGaN gated AlGaN/GaN Enhancement-mode High Electron Mobility Transistor Characteristics on Trap-Assisted Tunneling,” Journal of Applied Physics (Link)
Jyoti Sahu*, Bazila Parvez*, Mahalaxmi Patil, Ranie S. J., Arpit Sahu, Subhajit Basak, Bhanu Upadhyay, Swaroop Ganguly, Dipankar Saha, “Strain Engineered Unified SiNx Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit,” Physica Status Solidi Applications and Materials Science, 2024 (Link)
Conferences
Harshitha Gangu, Aakash Deshpande, Ranie S. Jeyakumar, Sahil Rakesh Wani, Abhishek Ajit Kadam, Udayan Ganguly, Laxmeesha Somappa, Veeresh Deshpande, “3D Monolithic Integrated Indium Tin Oxide-Silicon Hybrid Leaky Integrate and Fire Neuron,” ISCAS 2026
Aakash Deshpande, Harshitha Gangu, Ranie S. Jeyakumar, Laxmeesha Somappa, Veeresh Deshpande, "ITO FET-Based Capacitor-less Leaky Integrate and Fire Neuron,'' Device Research Conference, June 2025
J. Sahu, B. Parvez, J. Paul, Ranie S. J., et. al., “Strain Engineered Unified SiN Deposition for Device Passivation and Capacitance Dielectric in GaN MMIC,” 14th International Conference on Nitride Semiconductors, Fukuoka, Japan, November 12-17, 2023.