“Research is seeing what everybody else has seen and thinking what nobody else has thought.”
- Albert Szent-Györgyi
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Research Interest
Research Interest
Negative Capacitance Transistors
Spintronics
Neuromorphic Computing
Modeling, Simulation, Fabrication, Characterization and Application of Novel Nanodevices and State-of-the-Art Solid-State Devices
Research Experience
Research Experience
Theoretical Investigation and Variability Analysis of Spin-Orbit Torque Magnetic RAMs
Theoretical Investigation and Variability Analysis of Spin-Orbit Torque Magnetic RAMs
Supervisor: Dr. Md Zunaid Baten
Research Group: Solid-state Electronics and Photonics (SSEP) research group
Currently exploring the variability in switching characteristics of SOT-MRAMs, STT-assisted VCMA-based SOT-MRAMs resulting from intra and inter-cell magnetic coupling, fabrication defects, etc.
Magnetic Coupling Induced Variability Analysis of Spin Transfer Torque Magnetic Random Access Memory Devices
Magnetic Coupling Induced Variability Analysis of Spin Transfer Torque Magnetic Random Access Memory Devices
(M.Sc. Thesis)
(M.Sc. Thesis)
Supervisor: Dr. Md Zunaid Baten
In collaboration with: Singapore University of Technology and Design, and Globalfoundries, Singapore
Research Group: Solid-state Electronics and Photonics (SSEP) research group
Explored the intra and inter-cell magnetic coupling-induced variability in switching characteristics, read and write error rate, etc., of STT-MRAMs, STT-assisted VCMA-based MRAMs
Investigated the impact of intra-cell magnetic coupling on STT-MRAM device-to-device variability based on experimental measurements of STT-MRAMs and their spintronic, Monte Carlo, and statistical simulation results.
Implementation of Bidirectional Logic with Backhopping in Magnetic Tunnel Junctions
Implementation of Bidirectional Logic with Backhopping in Magnetic Tunnel Junctions
Supervisor: Dr. Md Zunaid Baten & Dr. Orchi Hassan
Research Topic: Implementing Bidirectional Logic with Backhopping in Magnetic Tunnel Junctions
Research Group: Solid-state Electronics and Photonics (SSEP) research group
Designed a bidirectional logic gate based on the backhopping phenomenon observed in magnetic tunnel junctions at high bias
Proposed a circuit design interconnecting the MTJs to simulate a two-input NAND gate
A Journal has been submitted in AIP Advances
Theoretical Investigation of Magnetic Backhopping in Spin Transfer Torque Random Access Memory Devices
Theoretical Investigation of Magnetic Backhopping in Spin Transfer Torque Random Access Memory Devices
(B.Sc. Thesis)
(B.Sc. Thesis)
Supervisor: Dr. Md Zunaid Baten
Research Topic: Implementing Bidirectional Logic with Backhopping in Magnetic Tunnel Junctions
Research Group: Solid-state Electronics and Photonics (SSEP) research group
Developed a physics based numerical model to successfully simulate backhopping at high bias
Investigated the effect of intra-cell stray field on backhopping voltage
Analyzed how the exchange coupling between magnetic layers offsets the effect of intra-cell stray field
Currently, our thesis group is working on preparing a manuscript on this field of study.
Some figures from my recent work can be found below:
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