Embedded Files
Time Reversal Broken Antiferromagnets: Mn3Sn, CrSb, MnTe, RuO2
Time Reversal Broken Antiferromagnets: Mn3Sn, CrSb, MnTe, RuO2
Antiferromagnets are of particular interest due to their robustness against external magnetic fields and ultrafast spin dynamics, making them promising candidates for next-generation spintronic technologies. Among them, non-collinear antiferromagnets stand out for exhibiting anomalous and topological Hall effects originating from Berry curvature in momentum space, highlighting the intricate connections between crystal symmetry, electronic structure, and emergent transport behavior. In addition to non-collinear systems, ongoing work explores altermagnets—a newly recognized class of materials, such as RuO₂ and CrSb, that combine characteristics of both ferromagnets and antiferromagnets. These materials possess spin-polarized electronic structures despite having zero net magnetization, enabling possibilities for dissipationless spin transport and symmetry-driven functionalities. Research works are based on the growth, magnetism, and transport properties of novel metallic antiferromagnetic single crystals.
Strain engineering of magnetism and magnetic anisotropy in complex oxide magnets.
Strain engineering of magnetism and magnetic anisotropy in complex oxide magnets.
The research focuses on employing strain engineering to tune and control the magnetic properties of novel oxide thin films. By integrating advanced experimental techniques with micromagnetic simulations, the work aims to manipulate magnetic anisotropy and explore emergent magnetic phases for next-generation spintronic device applications. Current efforts are directed toward the epitaxial growth of double perovskite thin films and the systematic tuning of their magnetic anisotropy to achieve tailored magnetic functionalities.
The research focuses on employing strain engineering to tune and control the magnetic properties of novel oxide thin films. By integrating advanced experimental techniques with micromagnetic simulations, the work aims to manipulate magnetic anisotropy and explore emergent magnetic phases for next-generation spintronic device applications. Current efforts are directed toward the epitaxial growth of double perovskite thin films and the systematic tuning of their magnetic anisotropy to achieve tailored magnetic functionalities.
Free standing complex oxide membranes for oxitronics
Free standing complex oxide membranes for oxitronics
This research area focusses on fabricating free-standing membranes of complex oxides, particularly perovskites and studying their magnetic, ferroelectric, superconducting properties. Free-standing membranes overcome the limitations of conventional epitaxial growth- lattice mismatch and substrate constraints, by enabling transfer of high-quality membranes onto diverse platforms including polymers and semiconductors. These membranes retain structural and functional integrity under mechanical deformation allowing precise control of properties via strain engineering. Recent demonstrations of freestanding ferroelectric tunnel junctions and memristive devices have showcased their potential for flexible, lightweight, and CMOS-compatible non-volatile memories, as well as neuromorphic and wearable electronics.
Development of Piezo Actuator based uniaxial strain cell
Development of Piezo Actuator based uniaxial strain cell
We are currently developing Piezo Actuator based uniaxial strain cell which can apply strain on thin long rod shaped single crystal specimens. The strain cell is expected to control the strain (compressive or tensile) electronically up to 0.5 % and also image the strain distribution using Digital Image Correlation Engine. The strain cell will be designed to be compatible with in-situ measurements such as Hall effect and Magnetooptical Kerr effect at low temperature.
Domain nucleation across metal–insulator transition in VO2 thin films
Domain nucleation across metal–insulator transition in VO2 thin films
Electronic and structural degrees of freedom are often intimately coupled in strongly correlated systems, which result in intriguing macroscopic and microscopic phenomena. Using the well-studied material VO2 as a prototype, here we explore the domain distribution across metal–insulator transition (MIT). We compare MIT in thin films of VO2 with different grain sizes grown by pulsed laser deposition and dc sputtering. We use macroscopic as well as microscopic techniques, such as first-order reversal curve (FORC) and infrared imaging, to probe the domain distributions across MIT. We explore the relation between the nature of the FORC distribution and the corresponding thermal hysteresis due to interactions between the supercooled metallic domains and surrounding insulating matrix. Our multi-probe study with quantitative analysis provides a correlation between the growth, domain interaction, and domain nucleation process in MIT.
Magnetism in pyrochlore oxides
Magnetism in pyrochlore oxides
Research in this area focuses on exploring the unique magnetic properties and crystal structures of pyrochlore oxides in both polycrystalline and thin-film forms. The studies aim to unravel the mechanisms driving magnetic transitions and to understand the influence of mixed oxidation states on these phenomena. Particular emphasis is placed on tuning magnetic transition temperatures through the manipulation of geometrical frustration inherent in pyrochlore lattices. The investigations combine theoretical methods—such as density functional theory (DFT) and phonon calculations—with experimental techniques including magnetization and specific heat measurements, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy, to gain comprehensive insight into the fundamental physics underlying emergent phenomena in pyrochlore oxide systems.
Page updated
Google Sites
Report abuse