Transition Metal oxide based devices for nonvolatile resistive random access memory applications.
Status: Completed
Funding agency: SERB-DST
Role: Principal Investigator
Project duration: 2017-2021
Sanctioned fund: INR 37.37 lakhs
Design and Fabrication of two terminal thin film based non-volatile memory devices.
Status: Completed
Funding agency: Vision Group of Science and Technology (VGST), Government of Karnataka, India.
Role: Principal Investigator
Project duration: 2019-2022
Sanctioned fund: INR 5 lakhs
Development of high-quality hexagonal boron-nitride films for solid state neutron detectors.
Status: Ongoing
Funding agency: BRNS-DAE, Government of India
Role: Co-Investigator
Project duration: 2024-2027
Sanctioned fund: INR 38.31 lakhs