[238] Dong-Geon Lee, Hyun-Seung Ryu, Mi-Jin Jin, Doo-Seung Um, Chang-Il Kim, "Diverse texturing characteristics through metal-assisted plasma etching with silver nanowires", Plasma Chemistry and Plasma Processing, https://doi.org/10.1007/s11090-024-10469-5(Apr.2024)
[237] Qiang Liu, Ji-Yeop Kim, Mi-Jin Jin, Doo-Seung Um, Chang-Il Kim, "Transition of Cu film to Cu2O film through oxygen plasma treatment", Materials Chemistry and Physics, https://doi.org/10.1016/j.matchemphys.2024.129090(Feb.2024)
[236] Dong-Geon Lee, Kyeng-Keun Choi, Deok-kee Kim, Doo-Seung Um, Chang-Il Kim, "Nanohole texturing to improve the performance of a microscopic photodetector", Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2023.107915(Jan.2024)
[235] Ji-Yeop Kim, Mi-Jin Jin, Bo Hou, Minsoo P. Kim, Doo-Seung Um, Chang-Il Kim, "Reducing the oxygen vacancy concentration in SrTiO3-δ thin films via an optimized O2 plasma treatment for enhancing device properties", Applied surface Science, https://doi.org/10.1016/j.apsusc.2023.158271(Dec.1.2023)
[234] Han Byeol Lee, Young-Hee Joo, Harshada Patil, Gwan-Ha Kim, Insu Kang, Bo Hou, Deok-kee Kim, Doo-Seung Um & Chang-Il Kim, "Plasma etching and surface characteristics depending on the crystallinity of the BaTiO3 thin film", Mater. Res. Express, https://doi.org/10.1088/2053-1591/aca9a9(2022, Accepted)
[233] Wenhui Yu, Jeong Geun Lee, young-hee joo, bo Hou, Doo-Seung Um & Chang-Il Kim, "Etching characteristics and surface properties of fluorine-doped tin oxide thin films under CF4-based plasma treatment", Applied Physics A, https://doi.org/10.1007/s00339-022-06082-y(Sep.30.2022)
[232] Young-Hee Joo, Gwan-Ha Kim, Doo-Seung Um and Chang-Il Kim, "Surface properties of Al-doped ZnO thin film before and after CF4/Ar plasma etching", Plasma Science and Technology, https://doi.org/10.1088/2058-6272/ac5975(Mar.1.2022)
[230] Young-Hee Joo, Mi-Jin Jin, Sung Kyun Kim ,Doo-Seung Um, and Chang-IlKim,"BCl3/Ar plasma etching for the performance enhancement of Al-doped ZnO thin films", Applied Surface Science,Volume 561, 149957(Sep.30.2021)
[229] Chea-Young, Young-Hee Joo, Minsoo P. Kim, Doo-Seung Um, and Chang-Il Kim, "Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma", Coatings , doi.org/10.3390/coatings11080906(July .29.2021)
[228] Young-Hee Joo, Jae-Hyung Wi, Woo-Jung Lee, Yong-Duck Chung, Dae-Hyung Cho, Saewon Kang, Doo-Seung Um, and Chang-Il Kim, "Work Function Tuning of Zinc-Tin Oxide Thin Films Using High-Density O2 Plasma Treatment", Coatings, Vol.10, No.11, 1026;doi:10.3390/coatings10111026(Nov. 2020)
[227] Zhang Liting, Young-Hee Joo, Doo-Seung Um, and Chang-Il Kim, "High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma", Mater. Res. Express, Vol. 7, No. 10, 106301-1~7 (Oct. 2020)
[226] Jae-Hyung Wi, Won Seok Han, Dae-Hyung Cho, Hye-Jung Yu, Chae-Woong Kim, Chaehwan Jeong, Jae Ho Yun, Chang-Il Kim, and Yong-Duck Chung, "Spectral Response of CuGaSe2/Cu(In,Ga)Se2 Monolithic Tandem Solar Cell with Open-Circuit Voltage over 1 V", J. Photovol. Vol. 8, No.3, pp. 840-844 (2018)
[225] Jae-Hyung Wi, Young-Hee Joo, Yong-Duck Chung, Jae-Hyung Jang, and Chang-Il Kim, "Synthesis and Crystallization of Culn1-xGaxSe2 Compounds Formed by Co-Sputtering with Se Vapor ", Sci. Advan. Mat., Vol. 10, No. 4, pp. 547-553 (Apr. 1. 2018)
[224] Jong-Chang Woo, Young-Hee Joo, Gwan-Ha Kim, Sang-Yong Kim, Jin-Ho Hwang, and Chang-Il Kim, "Furnace O2 Annealing Growth of Er2O3 Thin Film for Gate Stack Capacitance at Low Temperature“, Sci. Advan. Mat., Vol. 9, No. 7, pp. 1213-1216 (Dec. 1. 2017)
[223] Jong-Chang Woo, Chang-Il Kim, "Chemical Reaction on Etched TaNO Thin Film as O2 Content Varies in CF4/Ar Gas Mixing Plasma", Trans. Electr. Electron. Mater., Vol. 18, No. 2, pp. 74-77 (2017)
[222] Jing Huang, Young-Hee Joo, Chang-Il Kim, "Etching Mechanism of HfAlO3 Thin Films Using Adaptively Coupled Plasma System", Sci. Advan. Mat., Vol. 8, No. 12, pp. 2309-2312 (2016. 12.)
[221] Hwan-Jun Kim, Young-Hee Joo, and Chang-Il Kim, “CNF-Copper oxide composite electrode for carbon-MEMS energy storage system”, Sci. Advan. Mat., Vol. 8, No.12, pp. 2304-2308 (2016. 12.)
[220] Jun-Mo Kim, Young-Hee Joo, and Chang-Il Kim, "Effects of Process Parameters on Graphene Grown by Atmospheric Pressure Chemical Vapor Deposition", Sci. Advan. Mat., Vol. 8, No. 12, pp. 2299-2303 (2016. 12.)
[219]Yi-Yu Wang, Young-Hee Joo, and Chang-Il Kim, "Etching Characteristics of Titanium Nitride in Chlorine-Based Plasmas", J. Nanosci. Nanotechnol., Vol. 16, No. 12, pp. 12933-12935,(2016)
[218]Young-Hee Joo and Chang-Il Kim, "Influence of Oxygen Additions on the Etch Characteristics of TaN Thin Films in CF4/Ar Plasma", J. Nanosci. Nanotechnol., Vol. 16, No. 12, pp. 12890-12893, (2016)
[217]Seok Son, Young-Hee Joo, and Chang-Il Kim, "Effect of CF4 Addition to Cl2/Ar Plasmas on the Etching of ZrO2 Thin Films“, J. Nanosci. Nanotechnol", Vol. 16, No. 12, pp. 12886-12889,(2016)
[216]Jong-Chang Woo, Young-Hee Joo, Pil-Seung Kang, and Chang-Il Kim, "Etching Characteristics of TaNO Thin Film for Top Electrode Materials Using Inductively Coupled CF4/Ar Plasma", J. Nanosci. Nanotechnol., Vol. 16, No. 12, pp. 12882-12885, (2016)
[215]Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "Furnace O2 Annealing Growth of Cu2O Thin Film for Thin Film Transistors at The Low Temperature", J. Nanosci. Nanotechnol., Vol. 16, No.12, pp. 12878-12881, (2016)
[214]Jong-Chang Woo, Pil-Seung Kang, and Chang-Il Kim, "Optimization of Resistance Uniformity by the Surface Oxidation of Tantalum Nitride for Thin Film Resistors", J. Nanosci. Nanotechnol., Vol. 16, No. 12, pp.12835-12838, (2016)
[213]Beom-Sok Lee, Young-Hee Joo, Chang-Il Kim, "A study on the optical and electrical characteristics for ZnO/Al/ZnO multilayer films deposited by RF-power magnetron sputtering", J. Nano. Opto. Vol. 10, No. 3, pp.402-406 (Jun. 2015)
[212]Young-Hee Joo, Chang-Il Kim, "High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma", Thin Solid Films, Vol. 583, pp.40-45 (29 May. 2015)
[211]Sang-Min Lee, Young-Hee Joo, Chang-Il Kim, "Influences of film thickness and annealing temperature on properties of sol-gel derived ZnO4 SnO2 nanocomposite thin film", Appl. Sur. Sci. Vol. 320, pp.494-501 (30 Nov. 2014)
[210]Hwan-Jun Kim, Young-Hee Joo, Sang-Min Lee, and Chang-Il Kim, “Characteristics of Photoresist-derived Carbon Nanofibers for Li-ion Full Cell Electrode” , Trans. Electr. Electron. Mater. Vol. 15, No. 5, pp.265-269 (Oct. 25. 2014)
[209]Jong-Chang Woo, Chang-Auck Choi, Woo-Seok Yang, Yoon-Soo Chun, and Chang-Il Kim, "Surface properties of ZrO2 thin film under Cl2/Ar plasma using angle-resolved X-ray photoelectron spectroscopy”, J. Jpn. Appl. Phys. Vol. 53, pp.08NB05-1-08NB05-6, (Aug. 2014)
[208]Kyung-Rok Choi, Jong-Chang Woo, Young-Hee Joo, Yoon-Soo Chun, and Chang-Il Kim, "The Dry Etching Characteristics of TiO2 Thin Films in N2/CF4/Ar Plasma", Trans. Electr. Electron. Mater. Vol. 17, No. 1, pp.216-220 (Feb. 25. 2014)
[207]Jong-Chang Woo, Chang-Auck Choi, Joo-Yeon Kim, Woo-Seok Yang, Yoon Soo Chun, and Chang-Il Kim, "The Fabrication of MEMS Device for Trench width and Depth Using DRIE and Bulk Silicon Etching Process", Trans. Electr. Electron. Mater. Vol. 17, No. 1, pp.216-220(Feb. 25. 2014)
[206]Jong-Chang Woo, Yoon-Soo Chun, Chang-Il Kim, "The use of high density plasma system to improves the etch properties of zinc tin oxide thin film for transparent thin film transistors active layers”, Appl. Sur. Sci. Vol. 292, Issue.1, pp.915-920 (Fab. 15. 2014)
[205]Young-Hee Joo, Jong-Chang Woo, Chang-Il Kim, "Etching properties of Na0.5K0.5NbO3 thin films by using inductively coupled CF4/Ar plasma", Microelectronic Engineering Vol. 114, Issue. 1, pp.1-6 (Feb. 2014)
[204]Young-Hee Joo, Jong-Chang Woo, Chang-Il Kim, "Surface reaction effects on dry etching of IGZO thin films in N2/BCl3/Ar plasmas", Microelectronic Engineering Vol. 112, Issue. 12, pp.74-79 (Dec. 2013)
[203]Jong-Chang Woo, Chang-Auck Choi, and Chang-Il Kim, "Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma", Trans. Electr. Electron. Mater. Vol. 14, No. 4, pp.216-220 (Aug. 25. 2013)
[202]Pil-Seung Kang, Jong-Chang Woo, Young-Hee Joo, Chang-Il Kim, "Etch characteristics of HfO2 thin films by using CF4/Ar inductively coupled plasma", Vacuum, Vol. 93, pp.50-55 (Jul. 2013)
[201]Han-Soo Kim, Jong-Chang Woo, Young-Hee Joo, Chang-Il Kim, "A study of the surface reaction on the etched ITO thin films by using inductively coupled plasma", Vacuum Vol. 93, pp.7-12 (Jul. 2013
[200]Kyung-Rok Choi, Jong-Chang Woo, Young-Hee Joo, Yoon-Soo Chun, Chang-Il Kim, “Dry etching properties of TiO2 thin films in O2/CF4/Ar plasma", Vacuum, Vol. 92, pp.85-89 (Jun. 2013)
[199]Jong-Chang Woo, Chang-Auck Choi, Young-Hee Joo, Han-Soo Kim, and Chang-Il Kim, "The Dry Etching Properties of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma", Trans. Electr. Electron. Mater. Vol. 14, No. 2, pp.67-70 (Apr. 25. 2013)
[198]Han-Soo Kim, Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "The Use of Inductively Coupled CF4/Ar Plasma to Improve the Etch Rate of ZrO2 Thin Films", Trans. Electr. Electron. Mater. Vol. 14, No. 1, pp.12-15 (Feb. 25. 2013)
[197]Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "The Dry Etching Properties of HfAlO3 Thin Films over Si and SiO2 Using Inductively Coupled Plasma Source", Ferroelectrics, Vol. 457, pp.137-145 (Jan. 2013)
[196]Kyung-Rok Choi, Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "Effect of Dry Etching of TiO2 Thin Films Using Inductively Coupled Plasma", Ferroelectrics, Vol. 456, pp.63-73 (Jan. 2013)
[195]Han-Soo Kim, Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "Dry Etching Properties of ZTO Thin Films Using Inductively Coupled Plasma", Ferroelectrics, Vol. 454, pp.99-109 (Jan. 2013)
[194]Pil-Seung Kang, Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim,"Surface Chemical Reaction on HfO2 Thin Film Etched by High Density Plasma", Ferroelectrics, Vol. 454, pp.91-98 (Jan. 2013)
[193]Young-Hee Joo, Jong-Chang Woo, and Chang-Il Kim, Chang-Won Ahn, Hae-Jin Seog, Ill-Won Kim, "Dry Etching Characteristics of Bi0.5(Na0.75K0.25)TiO3 Thin Films in Inductively Coupled Plasma", Ferroelectrics, Vol. 453, pp.44-53 (Jan. 2013)
[192]Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "The Dry Etching Properties of TaN Thin Film Using Inductively Coupled Plasma", Trans. Electr. Electron. Mater. Vol. 13, No. 6, pp.287-291 (Dec. 25. 2012)
[191]Jong-Chang Woo, Nam Seob Baek, Joo Yeon Kim, and Chang-Il Kim, “The periodically negative semi-pyramid nano-structured polymer layer for broadband anti-reflection effect", RSC Advances, Vol. 2012, Issue. 2, pp.7677-7680(Aug. 02. 2012)
[190]]Jong-Chang Woo, Yoon-Soo Chun, Young-Hee Joo, and Chang-Il Kim, “The dry etching properties of TiO2 thin film using metal-insulator-metal capacitor in inductively coupled plasma system", Vacuum Vol. 86, Issue.12, pp.2152-2157 (Jul. 20. 2012)
[189]Young-Hee Joo, Jong-Chang Woo, Kyung-Rok Choi, Han-Soo Kim, Jae-Hyung Wi, and Chang-Il Kim, "Dry Etching of ITO Thin Films by The Addition Gases in Cl2/BCl3 Inductively Coupled Plasma", Trans. Electr. Electron. Mater. Vol. 12, No. 3, pp.157-161 (Jun. 25. 2012)
[188]<SCOPUS>Young-Hee Joo, Jong-Chang Woo, and Chang-Il Kim, “Dry Etching Properties of TiO2 Thin Film Using Inductively Coupled Plasma for Resistive Random Access Memory Application", Trans. Electr. Electron. Mater. Vol. 12, No. 3 pp.144-148 (Jun. 25. 2012)
[187]Jong-Chang Woo, and Chang-Il Kim, "Dry etch properties of IZO thin films in a CF4/Ar adaptively coupled plasma system", Vacuum Vol. 86, Issue.9, pp.1336-1340 (Mar. 22. 2012)
[186]Young-Hee Joo, Jong-Chang Woo, and Chang-Il Kim, “Dry Etching Characteristics of ZnO Thin Films for the Optoelectronics Devices by Using Inductively Coupled Plasma", Trans. Electr. Electron. Mater. Vol. 13, No. 1, pp.6-9 (25. Feb. 2012)
[185]Jong-Chang Woo, Yoon-Soo Chun, Young-Hee Joo, and Chang-Il Kim, "Low Leakage Current in the Metal-Insulator-Metal Capacitors of the structural Al2O3/TiO2/Al2O3Dielectrics", Appl. Phys. Lett. Vol. 100, Issue.8, pp.081101-1-3 (Fab. 20. 2012)
[184]Young-Hee Joo, Jong-Chang Woo, and Chang-Il Kim, "A Study of The Surface Chemical Reaction on IGZO Thin Films in BCl3/Ar Inductively Coupled Plasma", J. Electrochem. Soc. Vol.159, No. 4, pp.D190-D195 (Jan. 24. 2012)
[183]Young-Hee Joo, Jong-Chang Woo, Chang-Il Kim, "Dry etching characteristics of TiN thin films in CF4/BCl3/N2 plasma", Thin Solids Films Vol. 520, Issue. 6, pp.2339-2342 (Jan. 01. 2012)
[182]Jong-Chang Woo and Chang-Il Kim, "A Surface Properties of the Etched ZrO2 Thin Films using Adaptively Coupled Plasma Source", J. Electrochem. Soc. Vol. 159, No. 2, pp.D91-D96 (Dec. 20. 2011)
[181]Jong-Chang Woo, Tae-Kyung Ha, and Chang-Il Kim, "The Dry Etching Characteristics of HfAlO3 Thin Films in CF4/Cl2/Ar Inductively Coupled Plasma", J. Electrochem. Soc. Vol. 159, No. 1, pp.D26-D30 (Dec. 08. 2011)
[180]Jong-Chang Woo, Tae-Kyung Ha, Doo-Seung Um, Juyun Park, Yong-Cheol Kang, Chang-Il Kim, "A study on the etch characteristics of HfAlO3
dielectric thin films in Cl2/Ar gas chemistry using inductively coupled plasma system", Thin Solids Films Vol. 520, Issue 3, pp.1141-1146 (30. Nov. 2011)
[179]Jong-Chang Woo, Seung-Han Kim, Chang-Il Kim, "Etch characteristics of TiN/Al2O3 thin film by using a Cl2/Ar adaptively coupled plasma", Vacuum Vol. 86, Issue. 4, pp.403-408 (11. Nov. 2011)
[178]Jong-Chang Woo, Jung-Soo Park, Tae-Kyung Ha, and Chang-Il Kim, “The Dry Etching Properties on TiN Thin Film Using an N2/BCl3/Ar Inductively Coupled Plasma", Trans. Electr. Electron. Mater. Vol. 12, No. 4, pp.144-147 (25. Aug. 2011)
[177]Jong-Chang Woo, Young-Hee Joo, and Chang-Il Kim, "Etch Characterization of TiO2 Thin Films Using Metal-Insulator-Metal Capacitor in a Adaptively Coupled Plasma", J. Jpn. Appl. Phys. Vol. 50, No. 8, Issue 3, pp.08KC02-1-08KC02-6, (22. Aug. 2011)
[176]Jung-Soo Park, Jong-Chang Woo, and Chang-Il Kim, "Etch Properties of TiN Thin Film in Metal-Insulator-Metal Capacitor Using Inductively Coupled Plasma", J. Jpn. Appl. Phys. Vol. 50, No. 8, Issue 3, pp.08KC01-1-08KC01-4, (22. Aug. 2011)
[175]Jae-Hyung Wi, Jong-Chang Woo, Chang-Il Kim, "Surface treatments of indium tin oxide thin films by using high density plasma", Thin Solids Films Vol. 519, Issue.20, pp.6824-6828 (01. Aug. 2011)
[174]Jong-Chang Woo, Chang-Il Kim, "Dry etching of TaN thin films using CH4/Ar inductively coupled plasma", Vacuum Vol. 86, Issue.1, pp. 1-6 (04. Jul. 2011)
[173]Jong-Chang Woo, Jung-Soo Park, Chang-Il Kim, “The Dry Etching Characteristics of TiN Thin Films in BCl3-based plasma", Trans. Electr. Electron. Mater. Vol. 12, No. 3, pp.106-109(25. Jun. 2011.)
[172]Jong-Chang Woo, Tae-Kyung Ha, Chen Li, Seung-Han Kim, Jung-Soo Park, Keyoung-Moo Heo, Chang-Il Kim, “Dry Etching Characteristics of Zinc Oxide Thin Films in Cl2-Based Plasma", Trans. Electr. Electron. Mater. Vol. 12, No. 2, pp.60-63 (25. Apr. 2011.)
[171]Jong-Chang Woo, Tae-Kyung Ha, Chen Li, Seung-Han Kim, Jung-Soo Park, Keyoung-Moo Heo, Chang-Il Kim, “Damage on the Surface of Zinc Oxide Thin Films Etched in Cl-based Gas Chemistry”, Trans. Electr. Electron. Mater. Vol. 12, No. 2, pp.516-55 (25. Apr. 2011.)
[170]Tae-Kyung Ha, Jong-Chang Woo, and Chang-Il Kim, "Dry etch characteristics of HfAlO3 thin films in BCl3/Ar plasma using inductively coupled plasma system", Vacuum, Vol. 85, Issue.11, pp. 932-937 (25. Mar. 2011)
[169]Ju Tae Seo, Chang Il Kim, and Sang June Hahn, "Nonlinear Dynamical Behaviors in a Magnetized Plasma Diode System", J. Phys. Soc. Jpn, Vol. 80, pp. 034501-1~5, (10. Mar. 2011)
[168]Doo-Seung Um, Jong-Chang Woo, and Chang-Il Kim, "Etching characteristics of TaN thin film using an inductively coupled plasma", Surf. Coat. Tech., Vol. 205, Issue.Supplement 1, pp.S333-S336 (Dec. 25. 2010)
[167]<SCI>Jong-Chang Woo, Xue-Yang. Doo-Seung Um, and Chang-Il Kim,, "Dry Etching characteristics of ZrO2 Thin Films Using High Density Cl2/Ar Plasma", Ferroelectrics, Vol. 407, Issue 1, pp.117-124 (Nov. 19. 2010)
[166]Doo-Seung Um, Jong-Chang Woo, Xue Yang. and Chang-Il Kim, "Etch characteristics of CoFe Film Using an Inductively Coupled Plasma System", Ferroelectrics, Vol. 406, Issue 1, pp.185-191 (Nov. 19. 2010)
[165]Young-Hee Joo, Jong-Chang Woo, Xue Yang. and Chang-Il Kim, "Temperature Dependence on Dry Etching of Hafnium Oxide using Inductively Coupled Plasma", Ferroelectrics, Vol. 406, Issue 1, pp.176-184 (Nov. 19. 2010)
[164]Xue Yang, Jong-Chang Woo, Doo-Seung Um, and Chang-Il Kim, "Dry Etching of Al2O3 Thin Films in O2/BCl3/Ar Inductively Coupled Plasma", Trans. Electr. Electron. Mater. Vol. 11,No. 5, pp.202-205 (10. 25. 2010)
[163]Xue-Yang, Doo-Seung Um, Chang-Il Kim, "The etching characteristics of Al2O3 thin films in inductively coupled plasma", Thin Solids Films Vol. 518, Issue.22, pp.6441-6445(Sep. 01. 2010)
[162]Jae-Hyung Wi, Jong-Chang Woo, Doo-Seung Um, JunSeong Kim, Chang-Il Kim, "Surface properties of the etched ITO thin films using high density plasma", Thin Solids Films Vol. 518, Issue.22, pp.6228-6231(Sep. 01. 2010)
[161]Tae-Kyung Ha, Jong-Chang Woo and Chang-Il Kim, “Etching Characteristics of HfAlO3 Thin Films using Cl2/BCl3/Ar Inductively Coupled Plasma”, Trans. Electr. Electron. Mater. Vol. 11, No. 4, pp.166-169 (2010. 8. 25.)
[160]Jong-Chang Woo and Chang-Il Kim, “The Dry Etching Properties of ZnO Thin Film in a Cl2/BCl3/Ar Plasma”, Trans. Electr. Electron. Mater. Vol. 11, No. 3, pp.116-119 (6. 25. 2010)
[159]Jong-Chang Woo, Doo-Seung Um, Chang-Il Kim, "Dry etching of sol-gel deposited ZnO thin films in high density BCl3/Ar plasma", Thin Solid Films, Vol. 518, Issue 10, pp.2905-2909 (Mar. 1. 2010)
[158]Dong-Pyo Kim, Xue Yang, Jong-Chang Woo, Doo-Seung Um, and Chang-Il Kim, "Dry etching properties of TiN for metal/high-k gate stack using BCl3-based inductively coupled plasma", J. Vac. Sci. Tech. A 27(6) pp.1320-1325 (Nov./Dec., 2009)
[157]Jong-Chang Woo, Gwan-Ha Kim, Dong-Pyo Kim, Doo-Seung Um, and Chang-Il Kim, "Etch Characteristics of ZrO2 Thin Films in High Density Plasma", Jpn. J. Appl. Phys., Vol. 48, No. 8, pp.08HD03-1-08HD03-5, (Aug. 20, 2009)
[156]Doo-Seung Um, Dong-Pyo Kim, Jong-Chang Woo, Chang-Il Kim, Sewung-Kwon Lee, Tae-Woo Jung, and Seung-Chan Moon, "Dry etching of CoFe films using a CH4/Ar inductively coupled plasma for magnetic random access memory application", J Vac. Sci. Tech. A 27(4) pp.818-820 (Jun./Jul., 2009)
[155]X. Yang, Dong-Pyo Kim, Gwan-Ha Kim, Doo-Seung Um, and Chang-Il Kim, "Temperature Dependence on Dry Etching of Al2O3 Thin Films in BCl3/Cl2/Ar Plasma", J Vac. Sci. Tech. A 27(4) pp.821-825 (Jun./Jul., 2009)
[154]Jong-Chang Woo, Sang-Gi Kim, Jin-Gun Koo, Gwan-Ha Kim, Dong-Pyo Kim, Chong-Hee Yu, Jin-Young Kang, and Chang-Il Kim, "A study on dry etching for profile andselectivity of ZrO2 thin films over Si by using high density plasma", Thin Solid Films, Vol. 517, No. 14, pp.4246-4250 (29. May. 2009)
[153]Doo-Seung Um, Dong-Pyo Kim, Gwan-Ha Kim, Jong-Chang Woo and Chang-Il Kim,"Surface Reaction of TaN Metal Gate Etching by Using an Inductively Coupled Plasma" J. Korean Phys. Soc. Vol. 54, No.3, pp.1054-1058 (Mar. 15, 2009)
[152]Chan-Min Kang, Dong-Pyo Kim, Doo-Seung Um and Chang-Il Kim, "Chemical Reaction on the Surface of As-Doped ZnO Thin Films during the Dry Etching Process" J. Korean Phys. Soc.Vol. 54, No.3, pp.1002-1005 (Mar. 15, 2009)
[151]Dong-Pyo Kim, Gwan-Ha Kim, Jong-Chang Woo, Hwan-Jun Kim, Chang-Il Kim, Cheol-In Lee, Sewung-Kwon Lee, Tae-Woo Jung, Seung-Chan Moon, and Sang-Wook Park, “Dry Etching of High-k Dielectric Thin Films in HBr/Ar Plasma”, J. Korean Phys. Soc., Vol. 54, No.2, pp.934-938 (Feb. 15, 2009)
[150]Jong-Chang Woo, Gwan-Ha Kim, Dong-Pyo Kim, Doo-Seung Um, and Chang-Il Kim, "Improving the Etch Selectivity of ZrO2 Thin Films over Si by Using High Density Plasma" Ferroelectrics, Vol. 384, Issue 1, pp.47-55 (01. Jan. 2009)
[149]Xue-Yang, Dong-Pyo Kim, Gwan-Ha Kim, Jong-Chang Woo, Doo-Seung Um, and Chang-Il Kim, "The Etching Properties of Al2O3 Thin Films in BCl3/Cl2/Ar Plasma" Ferroelectrics, Vol. 384, Issue 1, pp.39-46 (01. Jan. 2009)
[148]Cheol-In Lee, Dong-Pyo Kim, Gwan-Ha Kim, Jong-Chang Woo, and Chang-Il Kim, "Dry Etching Mechanisms of ZrO2 Thin Films in BCl3/Cl2/Ar Plasma" Ferroelectrics, Vol. 384, Issue 1, pp.32-38 (01. Jan. 2009)
[147]<SCI>Doo-Seung Um, Dong-Pyo Kim, Gwan-Ha Kim, and Chang-Il Kim, "Dry Etching of TaN Thin Films by Using an Inductively Coupled Plasma" Ferroelectrics, Vol. 384, Issue 1, pp.17-24 (01. Jan. 2009)
[146]<SCI>Dong-Pyo Kim, Gwan-Ha Kim, Jong-Chang Woo, Xue Yang, Doo-Seung Um, and Chang-Il Kim, "Etching Properties of HfO2 Thin Films in Cl2/BCl3/Ar Plasma" Ferroelectrics, Vol. 381, Issue 1, pp.30-40 (01. Jan. 2009)
[145]<SCI>Kyoung-Tae Kim, Gwan-Ha Kim, Jong-Chang Woo, and Chang-Il Kim, "FerroelectricProperties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transisters", J Vac. Sci. Tech. A 26(5) pp.1178-1181 (Sep./Oct., 2008)
[144]J. C. Woo, G. H. Kim, J. G. Kim, C. I. Kim, "Etch characteristics of ZnO thin films in an inductively coupled plasma", Surf. Coat. Tech., Vol. 202, Issue 22-23, pp.5705-5708 (Aug. 30. 2008)
[143]<SCI>Kyoung-Tae Kim, Gwan-Ha Kim, Jong-Chang Woo, Chang-Il Kim, "Characteristics of Nickel-doped Zinc Oxide thin films prepared by sol-gel method", Surf. Coat. Tech. Vol. 202, Issue 22-23, pp.5650-5653 (Aug. 30. 2008)
[142]Kyoung-Tae Kim, Chang-Il Kim, Jong-Chang Woo, Gwan-Ha Kim, and Sung-Gab Lee, “Structural and Dielectric Characterizations of PST(Pb0.8Sr0.2)O3/PST(Pb0.2Sr0.8)O3 Heterolayered Thin Films”, J. Korean Phys. Soc., Vol. 51, No.12, pp.S92-S95 (Oct. 31, 2007)
[141]Kyoung-Tae Kim, Chang-Il Kim, Jong-Gyu Kim, Gwan-Ha Kim, "Effect of LaNiO3 electrode on microstructural and ferroelectric properties of Bi3.25Eu0.75Ti3O12 thin films", Thin Solid Films, Vol. 515, Issue 20-21, pp.8082-8086 (31. Jul. 2007)
[140]A. M. Efremov, Gwan-Ha Kim, Jong-Gyu Kim, Chang-Il Kim, "Self-consistent global model for inductively coupled Cl2 plasma: Comparison with experimental data and application for the etch process analysis" Thin Solid Films, Vol. 515, Issue 13, pp.5395-5402 (7. May, 2007)
[139] Gwan-Ha Kim, Chang-Il Kim, “Dry etching of magnesium oxide thin films by using inductively coupled plasma for buffer layer of MFIS structure”. Thin Solid Films, Vol. 515, Issue 12, pp.4955-4959 (23. Apr. 2007)
[138] Gwan-Ha Kim, Young-Rok Kang, Hwan-Jun Kim, Sang-Yong Kim. Chang-Il Kim, “Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process”. Thin Solid Films, Vol. 515, Issue 12, pp.4892-4896 (23. Apr., 2007)
[137]A. Efremov, J. C. Woo, G. H. Kim, C. I. Kim, "Etching characteristics and mechanisms of MgO thin films in the CF4/Ar inductively coupled plasma", Microelectronic Eng., Vol. 84, Issue 4, pp.638-645 (Apr. 2007)
[136]Chan-Min Kang, Jong-Sik Kim, Gwan-Ha Kim and Chang-Il Kim, "Etching mechanism of ZnO thin films in inductively coupled plasma" Solid State Phenomena, Vol. 124-126, No. , pp. 65-68, (Jan. 2007)
[135]Gwan-Ha Kim, Chang-Il Kim, "Selective etching of (Ba,Sr)TiO3 thin films over silicon in an inductively coupled plasma" Microelectronic Eng., Vol. 84, Issue 1, pp.187-191 (Jan. 2007)
[134]A. M. Efremov, Gwan-Ha Kim, Jong-Gyu Kim, A. V. Bogomolov, Chang-Il Kim, "On the Applicability of Self-Consistent Global Model for the Characterization of Cl2/Ar InductivelyCoupled Plasma" Microelectronic Eng., Vol. 84, Issue 1, pp.136-143 (Jan. 2007)
[133] A. M. Efremov, Gwan-Ha Kim, Jong-Gyu Kim, A. V. Bogomolov, Chang-Il Kim, "Applicability of self-consistent global model for characterization of inductively coupled Cl2 plasma", Vacuum, Vol.81, Issue 5, pp.669-675 (5. Jan. 2007)
[132]Kyoung-Tae Kim, Jong-Chang Woo, Chang-Il Kim, Gwan-Ha Kim, Sung-Gap Lee, and Cheol-In Lee, "Dielectric Properties of (Pb,Sr)TiO3
Heterolayered Thin Films for Tunable Application", Ferroelectrics, Vol. 357, Issue 1, pp.211-217 (01. Jan. 2007)
[131]Chan-Min Kang, Gwan-Ha Kim, Kyoung-Tae Kim, and Chang-Il Kim, "Etching Characteristics of (Na0.5K0.5)NbO3 Thin Films in an Inductively Coupled Cl2/Ar Plasma", Ferroelectrics, Vol. 357, Issue 1, pp.179-184 (01. Jan. 2007)
[130]Kyoung-Tae Kim, Gwan-Ha Kim, Jong-Chang Woo, and Chang-Il Kim, "Dielectric Properties of (Na,K)NbO3 Thin Films for Tunable Microwave Device Application", Ferroelectrics, Vol. 357, Issue 1, pp.166-171 (01. Jan. 2007)
[129]Gwan-Ha Kim, Kyoung-Tae Kim, Jong-Chang Woo, and Chang-Il Kim, "Etch Properties of Hf-Based High-k Dielectrics Using Inductively Coupled Plasma", Ferroelectrics, Vol. 357, Issue 1, pp.41-47 (01. Jan. 2007)
[128]Jong-Gyu Kim, Gwan-Ha Kim, Kyung-Tae Kim, Chang-Il Kim, "Etch damage evaluation on (Bi4-xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources" Materials Science in Semiconductor Processing, Vol. 9, Issue 6, pp.1108-1114 (Dec., 2006)
[127] Gwan-Ha Kim, Seung-Bum Kim, Chang-Il Kim, “Selective etching of SiO2 over Si3N4 in a C5F8/O2/Ar plasma”. Microelectronic Engineering, Vol. 83, Issue 11-12, pp.2504-2509 (Nov.-Dec. 2006)
[126]A. M. Efremov, G.-H. Kim, D. I. Balashov, C.-I. Kim, "Plasma parameters and chemical kinetics of an HCl DC glow discharge", Vacuum, Vol.81, Issue 3, pp.244-250 (24. Oct. 2006)
[125]Gwan-Ha Kim and Chang-Il Kim, "Effect of Cl2/Ar gas mixing ratio on (Pb,Sr)TiO3 thin film etching behavier in inductively coupled plasma", J. Vac. Sci. Tech. A 24(4) pp.1514-1517 (Jul/Aug, 2006) (Jun. 22. 2006)
[124]Gwan-Ha Kim and Chang-Il Kim, "Etching characteristics of LaNiO3 thin films in BCl3/Cl2/Ar gas chemistry", J Vac. Sci. Tech. A 24(4) pp.1399-1403 (Jul/Aug, 2006) (Jun. 22. 2006)
[123]Jong-Gyu Kim, Gwan-Ha Kim, and Chang-Il Kim, "Surface etching mechanism of Bi4-XLaXTi3O12 thin films using quadrupole mass spectroscopy ", J Vac. Sci. Tech. A 24(4) pp.1395-1398 (Jul/Aug, 2006) (Jun. 22. 2006)
[122]Jong-Sik Kim, Gwan-Ha Kim, and Chang-Il Kim, "Synthesis and Purification of Single-welled carbon nanotubes bu metane decomposition over iron-supported catalyssts", J Vac. Sci. Tech. A 24(4) pp.1113-1117 (Jul/Aug, 2006) (Jun. 22. 2006)
[121]Gwan-Ha Kim, Dong-Pyo Kim, Kyoung-Tae Kim, Chang-Il Kim, Cheol-In Lee, Tae-Hyung Kim, "Dry etching of LaNiO3 thin films using inductively coupled plasma", Thin Solid Films, Vol. 506-507C, Issue 1, pp. 217-221 (26 May, 2006)
[120]Kyoung-Tae Kim, Chang-Il Kim, "Electrical and dielectric properties of Ce-doped (Ba0.6,Sr0.4)TiO3 thin films", Surf. Coat. Tech. Vol. 200, Issue 16-17, pp.4708-4712 (Apr. 27. 2006)
[119]A. M. EFREMOV, K.-H. KWON, C.-S. PARK, S.-I. CHOI, C.-I. KIM, and, S.H. CHAI, "Plasma Parameters and Volume Kinetics in Cl2/O2 Mixtures", J. Material Sciencs : Materials in Electronics, 16, pp.315-321 (Aug. 2005)
[118]Gwan-Ha Kim, Chang-Il Kim, Alexander. M. Efremov, "Effect of gas mixing ratio on MgO etch behavier in inductively coupled BCl3/Ar plasma", Vacuum, Vol.79, Issue 3-4, pp.231-240 (19. Aug. 2005)
[117]<SCI>Seung-Bum Kim, Dong-Goo Choi, Tae-Eun Hong, Tae-Su Park, Dong-Sauk Kim, Yong-Wook Song, and Chang-Il Kim, "Study on self-aligned contact oxide etching using C5F8/O2/Ar and C5F8/O2/Ar/CH2F2 plasma", J. Vac. Sci. Tech. A 23(4) pp.953-958 (Jul/Aug, 2005)
[116]Gwan-Ha Kim, Kyoung-Tae Kim, and Chang-Il Kim, "Dry etching of (Ba,Sr)TiO3 thin films using an inductively coupled plasma", J. Vac. Sci. Tech. A 23(4) pp.894-897 (Jul/Aug, 2005)
[115]Gwan-Ha Kim, Jong-Sik Kim, Kyoung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Dry etching of (Pb,Sr)TiO3 thin films using inductively coupled plasma", J. Vac. Sci. Tech. A 23(4) pp.890-893 (Jul/Aug, 2005)
[114]Gwan-Ha Kim, A. M. Efremov, Dong-Pyo Kim, Chang-Il Kim, "Inductively coupled Cl2/N2 plasma: Experimental investigation and modeling", Microelectronic Eng., Vol. 81, Issue 1, pp.96-105 (Jul. 2005)
[113]Kyoung-Tae Kim, Chang-Il Kim, "Characterization of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by metal organic decomposition method" Thin Solid Films, Vol. 478, Issue 1-2, pp.6-12 (May. 1, 2005)
[112]Kyoung-Tae Kim, Chang-Il Kim,“Effect of lanthanides-substituted on ferroelectric properties of bismuth titanate thin films prepared by metalorganic decomposition”, Mater. Sci. & Engi. B, Vol.118, Issue. 1-3, pp.230-234 (Apr. 25. 2005)
[111]Seong-Mo Koo, Dong-Pyo Kim, Kyoung-Tae Kim, Chang-Il Kim, "The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry", Mater. Sci. & Engi. B, Vol.118, Issue. 1-3, pp.202-205 (Apr. 25. 2005)
[110]Seong-Mo Koo, Dong-Pyo Kim, Kyoung-Tae Kim, Chang-Il Kim, "The etching properties of MgO thin films in Cl2/Ar gas chemistry", Thin Solid Films, Vol. 475, Issue 1-2, pp. 313-317 (Mar. 22, 2005)
[109]Kyoung-Tae Kim, Jung-Mi Lee, Sang-Hun Song, Chang-Il Kim, "Characterization of BLT thin films using MgO buffer layer for MFIS-FET", Thin Solid Films, Vol.475, Issue 1-2, pp. 166-170 (Mar. 22, 2005)
[108]Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, "Plasma etching of (Ba,Sr)TiO3 thin films using inductively coupled Cl2/Ar and BCl3/Cl2/Ar plasma", Thin Solid Films, Vol. 475, Issue 1-2, pp. 86-90 (Mar. 22, 2005)
[107]A. M. Efremov, Dong-Pyo Kim, Chang-Il Kim, "Etching characteristics of Pb(Zr,Ti)O3 thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas: effect of gas mixing ratios", Thin Solid Films, Vol.474, Issue 1-2, pp.267-274 (Mar. 1, 2005)
[106]Kyoung-Tae Kim, Chang-Il Kim, "The effect of Cr doping on the microstructural and dielectric properties of (Ba0.6,Sr0.4)TiO3 thin films", Thin Solid Films, Vol.472, Issue 1-2, pp.26-30 (Jan. 24, 2005)
[105]Kyoung-Tae Kim, Chang-Il Kim, Sung-Gap Lee, Hwa-Mok Kim, "Correlation between dielectric properties and strain in Pb0.5Sr0.5TiO3 thin films prepared by using the sol-gel method", Surf. Coat. Tech., Vol. 190, Issue 2-3, pp.190-194, (Jan. 21, 2005)
[104]A. M. Efremov, Dong-Pyo Kim, Chang-Il Kim, "Etching characteristics and mechanisms of SrBi2Ta2O9 thin films in CF4/Ar and Cl2/Ar inductively coupled plasmas", Thin Solid Films, Vol.471, Issue 1-2, pp.328-335 (Jan. 3, 2005)
[103]Kyoung Tae Kim and Chang-Il Kim, "Characteristics of LaNiO3 Thin Films Fabricated by a Simple Metalorganic Decomposition Technique", J. Korean Phys. Soc. Vol. 45, No.96, pp.S783-S786 (Dec. 2004)
[102]Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, Chi-Sun Park, and Kwang-Ho Kwon, "Study on the Etch Characteristics of BST Thin Films by Using Inductively Coupled Plasma" J. Korean Phys. Soc. Vol.45, No.96, pp.S724-S727 (Dec. 2004)
[101]Kyoung-Tae Kim and Chang-Il Kim, "Dielectric properties of highly (100) oriented (Pb0.5,Sr0.5)TiO3 thin films grown on Si with MgO buffer layer", J. Vac. Sci. Tech. B 21(6) pp.2615-2619 (Nov/Dec, 2004)
[100]A. M. Efremov, Seong-Mo Koo, Dong-Pyo Kim, Kyoung-Tae Kim, and Chang-Il Kim, "Etching mechanism of MgO thin films in inductively coupled Cl2/Ar plasma", J. Vac. Sci. Tech. A 22 (5) pp.2101-2106 (Sept./Oct., 2004)
[99]A. M. Efremov, D.-P. Kim, K.-T. Kim, C.-I. Kim, "Etching characteristics and mechanism of Pb(Zr,Ti)O3 thin films in CF4/Ar inductively coupled plasma", Vacuum, Vol. 75, Issue 4, pp.321-329, (Aug. 16, 2004)
[98]Kyoung-Tae Kim, Chang-Il Kim, "The effects of drying temperature on the crystallization of YMnO3 thin films prepared by sol-gel method using alkoxides", J. Euro. Cera. Soc., Vol. 24, No. 9, pp.2613-2617 (Aug. 2004)
[97]A. M. Efremov, Dong-Pyo Kim, Chang-Il Kim, "Inductively coupled Cl2/O2 plasma:experimental investigation and modeling", Vacuum, Vol. 75, Issue 3, pp.237-246, (Jul. 26, 2004)
[96]Young-Hoon Son, Kyoung-Tae Kim, and Chang-Il Kim, "Ferroelectric properties of Lanthanide-doped Pb(Zr0.6,Ti0.4)O3 thin films prepared by using a sol-gel method", J. Vac. Sci. Tech. A, 22(4) pp.1743-1745 (Jul/Aug, 2004)
[95]Jung-Mi Lee, Kyoung-Tae Kim, and Chang-Il Kim, "Characteristics of Pt/Bi3.25La0.75Ti3O12/ZrO2/Si structures using ZrO2 as buffer layers for ferroelectric-gate field-effect transistors", J. Vac. Sci. Tech. A, 22(4) pp.1739-1742 (Jul/Aug, 2004)
[94]Seong-Mo Koo, Dong-Pyo Kim, Kyoung-Tae Kim, Sang-Hun Song, and Chang-Il Kim, "Etching properties of lead-zirconate-titanate thin film in Cl2/Ar and BCl3/Ar gas chemistries", J. Vac. Sci. Tech. A, 22(4) pp.1519-1523 (Jul/Aug, 2004)
[93]Kyoung-Tae Kim Sang-Hun Song, and Chang-Il Kim, "Effect of thickness on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films on Pt/Ti/SiO2/Si substrates", J. Vac. Sci. Tech. A, 22(4) pp.1315-1318 (Jul/Aug, 2004)
[92]A. M. Efremov, Dong-Pyo Kim, Chang-Il Kim, "Effect of gas mixing ratio on gas-phase composition and etch rate in an inductively coupled CF4/Ar plasma", Vacuum, Vol. 75, Issue 2, pp. 133-142 (Jul. 12, 2004)
[91]Dong-Pyo Kim, Chang-Il Kim, Kwang-Ho Kwon, "Etching properties of ZnS thin films inCl2/CF4/Ar plasma", Thin Solid Films, Vol.459, Issue 1-2, pp.131-136 (Jul. 1, 2004)
[90]Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, "Etching characteristic and mechanism of BST thin films using inductively coupled Cl2/Ar plasma with additive CF4 gas", Thin Solid Films, Vol.459, Issue 1-2, pp.127-130 (Jul. 1, 2004)
[89]Dong-Pyo Kim, Ji-Won Yeo, Chang-Il Kim, "Etching properties of Al2O3 films in inductively coupled plasma", Thin Solid Films, Vol.459, Issue 1-2, pp.122-126 (Jul. 1, 2004)
[88]<SCI>Dong-Pyo Kim, Ji-Won Yeo, Chang-Il Kim, "The etching properties of SBT thin films in BCl3/Cl2/Ar plasma", Thin Solid Films, Vol.459, Issue 1-2, pp.76-81 (Jul. 1, 2004)
[87]Kyu-Tae Lim, Seong-Mo Koo, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim,"Improvement in ferroelectric properties of Pt/PZT/Pt capacitors etched as a function of Ar/O2 gas mixing ratio into Cl2/CF4 plasma", Thin Solid Films, Vol.459, Issue 1-2, pp.71-75 (Jul. 1, 2004)
[86]A. M. Efremov, Dong-Pyo Kim, and Chang-Il Kim, "Simple Model for Ion-Assisted Etching Using Cl2-Ar Inductively Coupled Plasma: Effect of Gas Mixing Ratio", IEEE Trans. on Plasma Science, Vol.32, No. 3, pp.1344-1351 (Jun. 2004)
[85]Kyoung-Tae Kim, Chang-Il Kim, Tae-Hyung Kim, "Characteristics of La0.5Sr0.5CoO3 thin films fabricated by a simple metal-organic decomposition technique", Vacuum, Vol.74, Issue 3-4, pp.671-675 (Jun. 7, 2004)
[84]Kyoung-Tae Kim, Chang-Il Kim, "Low temperature synthesis and ferroelectric properties of (117)-oriented Bi3.25La0.75Ti3O12 thin films on LaNiO3 electrodes", Vacuum, Vol.74, Issue 3-4, pp.665-670 (Jun. 7, 2004)
[83]Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, "Etching mechanism of (Pb,Sr)TiO3 thin films for DRAM application using Cl2/Ar inductively coupled plasma", Vacuum, Vol.74, Issue 3-4, pp.485-489 (Jun. 7, 2004)
[82]Sun Jin Yun, Kwang-Ho Kwon, Yong-Eui Lee and Chang-Il Kim, "Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4
Inductively Coupled Plasma", Jpn. J. Appl. Phys., Vol.43, No.5A, pp.2716-2720 (May, 2004)
[81]Dong-Pyo Kim, Kyoung-Tae Kim, Seong-Mo Koo and Chang-Il Kim, "Effects of Temperature on the Etching Properties of Bi4-xLaxTi3O12 Thin Films", J. Korean Phys. Soc., Vol.44, No.5, pp.1128-1131 (May. 15, 2004)
[80]Kyu-Tae Lim, Kyoung-Tae Kim, Dong-Pyo Kim and Chang-Il Kim, "Dry Etching ofFerroelectric Bi4-xEuxTi3O12 (BET) Thin Films", J. Korean Phys. Soc., Vol. 44, No.5, pp.1113-1117 (May. 15, 2004)
[79]Ji-Won Yeo, Dong-Pyo Kim and Chang-Il Kim, "Dependance of the Etching Characteristics of SBT Thin Films on the Amount of BCl3 Added to a Cl2/Ar Inductively Coupled Plasma", J. Korean Phys. Soc., Vol.44, No.5, pp.1092-1096 (May. 15, 2004)
[78]Kyoung-Tae Kim, Myoung-Gu Kang, Chang-Il Kim, "Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma", Microelectronic Engineering, Vol. 72, Issue 3-4, pp.294-300 (May, 2004)
[77]Kyoung-Tae Kim, Chang-Il Kim, "Effect of bismuth excess on the crystallization of Bi3.25La0.75Ti3O12 thin films on Pt/Ti/SiO2/Si substrates", Microelectronic Engineering, Vol. 71, Issue 3-4, pp.266-271 (May, 2004)
[76]A. M. Efremov, D.-P. Kim, K.-T. Kim, and C.-I. Kim, "Etching Mechanism of Pb(Zr,Ti)O3 Thin Films in Cl2/Ar Plasma", Plasma Chemistry and Plasma Processing, Vol. 24, Issue 1, pp.13-28 (Mar. 2004)
[75]Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, "(Pb,Sr)TiO3 thin films etching characteristics using inductively coupled plasma", Thin Solid Films, Vol. 447-448, pp.688-692 (Jan. 30, 2004)
[74]Kyoung-Tae Kim, Chang-Il Kim, "Dielectric properties of highly (100) oriented (Pb0.5,Sr0.5)TiO3 thin films grown on LaNiO3 electrodes", Thin Solid Films, Vol. 447-448, pp.651-655 (Jan. 30, 2004)
[73]Kyoung-Tae Kim, Chang-Il Kim, "Effect of Bi4Ti3O12 seeding layer on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by a metalorganic decomposition method", Thin Solid Films, Vol. 447-448, pp.413-417 (Jan. 30, 2004)
[72]Dong-Pyo Kim, Kyoung-Tae Kim, Chang-Il Kim, A. M. Efremov, "Etching mechanism of Bi4-xLaxTi3O12 films in Ar/Cl2 Inductively Coupled Plasma", Thin Solid Films, Vol. 447-448, pp.343-348 (Jan. 30, 2004)
[71]Kyu-Tae Lim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, "Electrical properties of Bi4-xEuxTi3O12 (BET) thin films after etching in inductively coupled CF4/Ar plasma", Thin Solid Films, Vol. 447-448, pp.337-342 (Jan. 30, 2004)
[70]Jung-Mi Lee, Kyoung-Tae Kim, Chang-Il Kim, "Structural and electrical properties of metal-ferroelectric-insulator-semiconductor field-effect transistors using a Pt/Bi3.25La0.75Ti3O12/CeO2/Si structure", Thin Solid Films, Vol. 447-448, pp.322-326 (Jan. 30, 2004)
[69]Kyoung-Tae Kim, Chang-Il Kim, "Electrical conduction behavior of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by a metalorganic decomposition method", Surf. Coat. Tech. Vol.177-178, pp.774-778 (Jan. 30, 2004)
[68]Kyoung-Tae Kim, Chang-Il Kim, "The effect of orientation on structure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films", Surf. Coat. Tech., Vol.177-178, pp.770-773 (Jan. 30, 2004)
[67]Kyoung-Tae Kim and Chang-Il Kim, "Bi3.25Eu0.75Ti3O12 Thin Films with No Polarization Fatigue on Prepared on Pt Electrodes by Using Chemical Solution Routes", J. Korean Phys. Soc. Vol. 44, No.1, pp.30-34 (Jan. 2004)
[66]Dong-Pyo Kim, Kyoung-Tae Kim, A. M. Efremov and Chang-Il Kim, "Surface Kinetics on Bi4-xLaxTi3O12 Films Etched in CF4/Ar Gas Chemistry", J. Korean Phys. Soc. Vol. 44, No.1, pp.1-5 (Jan. 2004)
[65]Sung-Gap Lee, Chang-Il Kim, Byung-Chul Kim, "Dielectric properties of screen-printed (Ba,Sr,Ca)TiO3 thick films modified with Al2O3 for microwave device applications" J. Eur. Cer. Soc. Vol. 24, Issue 1, pp.157-162 (Jan. 2004)
[64]A. M. Efremov, Dong-Pyo Kim, Kyoung-Tae Kim, Chang-Il Kim,"Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasmas", Microelectron. Eng. Vol. 71, Issue 1, pp.54-62 (Jan. 2004)
[63]Sung-Gap Lee, Chang-Il Kim, Jeong-Phill Kim, Sang-Heon Lee, "Structural and dielectric properties of barium strontium calcium titanate thick films modified with MnO2 for phased array antennas", Materials Letters, Vol. 58, Issue 1, pp.110-114 (Dec. 2003)
[62]A. M. Efremov, Dong-Pyo Kim and Chang-Il Kim, "Effect of Gas Mixing Ratio on the Plasma Parameters and the Gas Phase Composition in Cl2/CF4
Inductively Coupled Plasma", J. Korean Phys. Soc. Vol. 43, No.6, pp.1042-1048 (Dec. 2003)
[61]A. M. Efremov, Dong-Pyo Kim, and Chang-Il Kim, "Etching characteristics and mechanism of Au thin films in inductively coupled Cl2/Ar plasma", J. Vac. Sci. Tech. A 21(6) pp.1837-1842 (Nov/Dec. 2003)
[60]Dong-Pyo Kim and Chang-Il Kim, "Dry Etching of YMnO3 Thin Films in Ar/Cl2 and CF4/Cl2 Plasma", J. Korean Phys. Soc., Vol. 43, No.5, pp.738-742 (Nov. 2003)
[59]Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Etchcharacteristics of (Pb,Sr)TiO3 thin films using Cl2/Ar inductively coupled plasma", J. Vac. Sci. Tech. A 21(5) pp.1616-1619 (Sep./Oct, 2003)
[58]A. M. Efremov, Dong-Pyo Kim, and Chang-Il Kim, "Inductively coupled Cl2/Ar plasma: Experimental investigation and modelling", J. Vac. Sci. Tech. A 21(4) pp.1568-1573 (Jul/Aug, 2003)
[57]Kyu-Tae Lim, Kyoung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Reduction of etching damage in lead-zirconate-titanate thin films with inductively coupled plasma", J. Vac. Sci. Tech. A 21(4) pp.1563-1567 (Jul/Aug, 2003)
[56]Kyu-Tae Lim, Kyoung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Etch characteristics of Bi4-xEuxTi3O12 (BET) thin films using inductively coupled plasma", J. Vac. Sci. Tech. A 21(4) pp.1475-1481 (Jul/Aug, 2003)
[55]Pil-Seung Kang, Kyoung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Study on damage reduction of (Ba0.6,Sr0.4)TiO3 thin films etched in Ar/CF4 plasmas", J. Vac. Sci. Tech. A 21(4) pp.1469-1474 (Jul/Aug, 2003)
[54]Kyoung-Tae Kim, Chang-Il Kim, Dong-Hee Kang, and Il-Wun Shim, "Large remanent polarization of cerium-modified bismuth-titanate thin films for ferroelectric random acess memories", J. Vac. Sci. Tech. A 21(4) pp.1376-1380 (Jul/Aug, 2003)
[53]A. M. Efremov, D.-P. Kim, and C.-I. Kim, "Investigation of SrBi2Ta2O9 thin films etching mechanisms in Cl2/Ar plasma", J. Vac. Sci. Tech. A 21(4) pp.1017-1023 (Jul/Aug, 2003)
[52]A. M. Efremov, Dong-Pyo Kim, Chang-Il Kim, "On mechanism of argon addition influence on etching rate in chlorine plasma", Thin Solid Films, Vol. 435, Issue 1-2, pp.232-237, (Jul. 2003)
[51]Myoung-Gu Kang, Kyoung-Tae Kim, Chang-Il Kim, "Plasma-induced damage in PZT thin films etched by inductively coupled plasma", Thin Solid Films, Vol. 435, Issue 1-2, pp. 222-226, (Jul. 2003)
[50]A. M. Efremov, Dong-Pyo Kim, and Chang-Il Kim, "Volume and heterogeneous chemistry of active species in chlorine plasma", Thin Solid Films, Vol. 435, Issue 1-2, pp.83-88, (Jul. 2003)
[49]Pil-Seung Kang, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, Alexander M. Efremov, "Dry etching characteristics of (Ba0.6,Sr0.4)TiO3 thin films in high density CF4/Ar plasma", Surf. Coat. Tech., Vol. 171, Issue 1-3, pp.273-279, (Jul. 2003)
[48]Dong-Pyo Kim, Chang-Il Kim, "The etching characteristics of YMnO3 thin films in high density Ar/CF4 plasma", Thin Solid Films, Vol. 434, Issue 1-2, pp.130-135 (Jun. 2003)
[47]Dong-Pyo Kim, Chang-Il Kim, "Etching characteristics of Bi4-xLa0.75xTi3O12 (BLT) in inductively coupled CF4/Ar plasma", Microelectronic Engineering, Vol. 66, Issue 1-4, pp.912-917(May.2003)
[46]Dong-Pyo Kim, Chang-Il Kim, Byoung-Gon Yu, "Effects of O2 annealing after etching SrBi2Ta2O9 film in Cl2/CF4/Ar plasma”, Microelectronic Engineering, Vol. 66, Issue 1-4, pp.904-911 (May. 2003)
[45]Kyoung-Tae Kim, Chang-Il Kim, "Structure and dielectric properties of Bi-doped Ba0.6Sr0.4TiO3 thin films fabricated by sol-gel method", Microelectronic Engineering, Vol.66, Issue 1-4, pp.835-841(May. 2003)
[44]Kyoung-Tae Kim, Chang-Il Kim, Sung-Gap Lee, "Ferroelectric properties of Pb(Zr,Ti)O3 heterolayered thin films for FRAM applications", Microelectronic Engineering, Vol. 66, Issue1-4, pp.662-669(May. 2003)
[43]Sung-Gap Lee, Chang-Il Kim, Jeong-Phill Kim, and Sang-Heon Lee, "Dielectric Properties of BSCT Thick Films for Microwave Device Applications", J. Korean Phys. Soc., Vol. 42, No. 4, pp.532-537 (Apr. 2003)
[42]Dong-Pyo Kim, Yun-Seong Chang, and Chang-Il Kim, "Etch Characteristics of CeO2 Thin Films in Ar/CF4/Cl2 Plasma", J. Vac. Sci. Tech. A, 21(2) pp.426-430 (Mar/Apr. 2003)
[41]Kyu-Tae Lim, Dong-Pyo Kim, Kyoung-Tae Kim and Chang-Il Kim, "The Effect of CF4 Addition on Ru Etching with Inductively Coupled Plasma", J. Korean Phys. Soc., Vol. 42, Supplementary Issue, pp.S829-S832 (Feb. 2003)
[40]Dong-Pyo Kim, Kyoung-Tae Kim and Chang-Il Kim, "Etching Properties of BLT Films in Cl4/Ar Plasma", J. Korean Phys. Soc., Vol. 42, Supplementary Issue, pp.S824-S828 (Feb. 2003)
[39]Pil-Seung Kang, Kyoung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Etch Characteristics of BCB Films Using Inductively Coupled Plasma", J. Korean Phys. Soc., Vol. 42, Supplementary Issue, pp.S819-S823 (Feb. 2003)
[38]Yun-Seong Chang, Dong-Pyo Kim, Chang-Il Kim, Kwee-Bo Sim, and Eui-Goo Chang, "Etching Characteristics of Au Thin Films Using Inductively Coupled Cl2/Ar Plasma", J. Korean Phys. Soc., Vol. 42, Supplementary Issue, pp.S791-S794 (Feb. 2003)
[37]Kyoung-Tae Kim, Chang-Il Kim, Dong-Hee Kang, Il-Wun Shim, "The effect of Eu substitution on the ferroelectric properties of Bi4Ti3O12 thin films prepared by metal-organic decomposition", Thin Solid Films, Vol. 422, Issue 1-2, pp.230-234 (Dec. 2002)
[36]Kyoung-Tae Kim, Chang-Il Kim, Dong-Hee Kang, and Il-Wun Shim, "Structural and Ferroelectric Characterization of Bi3.25La0.75Ti3O12 Thin Films prepared by Using Metalorganic Deposition", J. Korean Phys. Soc., Vol. 41, No.6, pp.1003-1007 (Dec. 2002)
[35]Jae-Hwa Park, Kyung-Tae Kim, Chang-Il Kim, and Eui-Goo Chang, "Effect of CF4Addition to Cl2/Ar on the Etching of Ferroelectric YMnO3", J. Korean Phys. Soc. Vol. 41, No.6, pp.993-997 (Dec. 2002)
[34]Kyoung-T. Kim, Chang-I. Kim, "Structure and dielectrical properties of (Pb,Sr)TiO3 thin films for tunable microwave devices" Thin Solid Films, Vol.420-421, pp.544-547, (Dec. 2002)
[33]Kyoung-Tae Kim, Chang-Il Kim, Dong-Hee Kang, and Il-Wun Shim, "Effect of grain size on the ferroelectric properties of Bi3.25La0.75Ti3O12 Thin Films" International Journal of Modern Physics B, Vol.16, Nos.28-29, pp.4469-4478 (Nov. 2002)
[32]Dong-Pyo Kim, and Chang-Il Kim, "Characteristics of CeO2 Thin Films Etched with a High-Density CF4/Ar Plasma", J. Korean Phys. Soc., Vol. 41, No.4, pp.519-523 (Oct. 2002)
[31]Myung-Gu Kang, Kyung-Tae Kim, Dong-Pyo Kim, and Chang-Il Kim, "Reduction of Dry Etching Damage to PZT Films Etched with a Cl-Based Plasma and the Recovery Behavior", J. Korean Phys. Soc., Vol. 41, No.4, pp.445-450 (Oct. 2002)
[30]Dong-Pyo Kim and Chang-Il Kim, “Etching Characteristics of SrBi2Ta2O9 Thin Films in a Cl2/CF4/Ar Plasma”, J. Korean Phys. Soc., Vol. 41, No.4, pp.439-444 (Oct. 2002)
[29]Kyoung-Tae Kim, Chang-Il Kim, and Sung-Gap Lee, "Dielectric Properties of (Pb,Sr)TiO3 Thin Films Prepared by Using the Sol-Gel Method" J. Korean Phys. Soc., Vol. 41, No.3, pp.377-380 (Sep. 2002)
[28]Dong-Pyo Kim, Chang-Il Kim, "The surface reaction on SrBi2Ta2O9 thin films etched in Cl2/CF4/Ar inductively coupled plasma", Microelectronic Engineering, Vol. 63, Issue 4, pp.373-379 (Sep. 2002)
[27]Dong-Pyo Kim and Chang-Il Kim, "Etching Behaviors of SrBi2Ta2O9 Thin Films in Cl2/Ar Inductively Coupled Plasma", J. Korean Phys. Soc., Vol. 39, Supplementary Issue, pp.S224-S227 (Dec. 2001)
[26]Chang-Il Kim, Dong-Pyo Kim, Sung-Uk Shin, Kwee-Bo Sim, and Eui-Goo Chang,"Optical Emission Spectroscopy Analysis on the Chemical Reaction in Etching of SrBi2Ta2O9(SBT) Thin Films Using Inductively Coupled Cl2/Ar Plasma", J. Korean Phys. Soc., Vol. 39, Supplementary Issue, pp.S219-S223 (Dec. 2001)
[25]Myoung-Gu Kang, Kyoung-Tae Kim, Chang-Il Kim, "Recovery of plasma-induced damage in PZT thin film with O2 gas annealing", Thin Solid Films, Vol.398-399, Issue 1-2, pp.448-453 (Nov. 2001)
[24]Young-Chan Kim and Chang-Il Kim, "Etching mechanism of Y2O3 thin films in high density Cl2/Ar plasma", J. Vac. Sci. Tech. A 19(5) pp.2676-2679 (Sep/Oct, 2001)
[23]Byung-Jun Min, Chang-Il Kim, and Yong-Tae Kim, "Etching mechanism of YMnO3 thin films in Cl2/Ar gas chemistries", J. Vac. Sci. Tech. A 19(4) pp.1289-1293 (Jul/Aug, 2001)
[22]Chang-SeokOh, Chang-Il Kim, and Kwang-Ho Kwon, "Etch characteristics of CeO2 thin films as a buffer layer for the applications of ferroelectric random access memory", J. Vac. Sci. Tech. A 19(4) pp.1068-1071 (Jul/Aug, 2001)
[21]Sung-Ki Choi, Dong-Pyo Kim, Chang-Il Kim, and Eui-Goo Chang, "Damages in etching of (Ba,Sr)TiO3 thin films using inductively coupled plasma", J. Vac. Sci. Tech. A 19(4) pp.1063-1067 (Jul/Aug, 2001)
[20]Dong-Pyo Kim and Chang-Il Kim, "Etching Properties of SrBi2Ta2O9 Thin Films Using CF4/Ar Magnetically Enhanced Inductively Coupled Plasma for FRAM", J. Korean Phys. Soc., Vol. 39, No.1, pp.189-192 (Jul. 2001)
[19]Dong-Pyo Kim, Chang-Il Kim, "The etching characteristics of SrBi2Ta2O9 thin film in CF4/Ar plasma using magnetically enhanced inductively coupled plasma", Thin Solid Films, Vol.385, Issue 1-2, pp.162-166 (Apr. 2001)
[18]Seung-Bum Kim, Byung-Jun Min, Dong-Pyo Kim, and Chang-Il Kim, "Effects of BCl3 Addition in Cl2/Ar Plasma Etching for (Ba,Sr)TiO3 Thin Films", J. Korean Phys. Soc., Vol. 38, No. 3, pp.264-267 (Mar. 2001)
[17]Seung-Bum Kim, Yong-Hyuk Lee, Tae-Hyung Kim, Geun-Young Yeom, and Chang-Il Kim, "Etching mechanism of (Ba,Sr)TiO3 films in high density Cl2/BCl3/Ar plasma", J. Vac. Sci. Tech. A 18(4) pp.1381-1384 (Jul/Aug, 2000)
[16]Jae-Heung Ryu, Nam-Hun Kim, Hyeon-Soo Kim, Geun-Young Yeom, Eui-Goo Chang, and Chang-Il Kim, "Roles of N2 gas in etching of platinum by inductively coupled Ar/Cl2/N2 plasmas", J. Vac. Sci. Tech. A 18(4) pp.1377-1380 (Jul/Aug, 2000)
[15]Tae-Hyun An, Joon-Yong Park, Geun-Young Yeom, Eui-Goo Chang, and Chang-Il Kim, "Effects of BCl3 addition on Ar/Cl2 gas in inductively coupled plasma for lead zirconate titanate etching", J. Vac. Sci. Tech. A 18(4) pp.1373-1376 (Jul/Aug, 2000)
[14]Jung-Woo Seo, Do-Haing Lee, Won-Jae Lee, Byung-Gon Yu, Kwang-Ho Kwon, Geun-Young Yeom, Eui-Goo Chang, and Chang-Il Kim, "The etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma", J. Vac. Sci. Tech. A 18(4) pp.1354-1358 (Jul/Aug, 2000)
[13]Nam-Hoon Kim, Chang-Il Kim, Eui-Goo Chang and Kwang-Ho Kwon,“ A Study on the Suppression of Etch Residues by O2 Gas Addition in Dry Etching of Pt Film”, J. Korean Phys. Soc. Vol. 35, Issue 94, pp.S806-S809 (Dec. 1999)
[12]Seung-Bum Kim, Chang-Il Kim, and Eui-Goo Chang, “The Etching Mechanism of (Ba, Sr) TiO3 Films Using Cl2/Ar Inductively Coupled Plasma” J. Korean Phys. Soc., Vol. 34,Supplementary Issue, pp.S716-S720 (Dec. 1999)
[11]Kyu-Ha Baek, Yong-Sun Yoon, Jong-Moon Park, Kwang-Ho Kwon, Chang-Il Kim, and Kee-Soo Nam, "Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1 %) Alloy Surfaces", ETRI Journal, Vol. 21, No. 3, pp.16-21 (Sep. 1999)
[10]Sang-Gi Kim, Kyu-Ha Baek, Jongdae Kim, Jin-Gun Koo, Dae-Yong Kim, In-Soo Kim, Kwang-Ho Kwon, Chang-Il Kim, "Supperesion of Corrosion Phenomenon on AlCu Surface with Fluorine Treatment", J. Korean Phys. Soc., Vol. 35, No. 92, pp.S357-S360 (Jul. 1999)
[9]Seung-Bum Kim, Chang-Il Kim, Eui-Goo Chang, Guen-Young Yeom, "Study on surface reaction of (Ba,Sr)TiO3 thin films by high density plasma etching", J. Vac. Sci. Tech. A 17(4) pp.2156-2161 (Jul/Aug, 1999)
[8]Yong-Sun Yoon, Kyu-Ha Baek, Jong-Moon Park, Kwang-Ho Kwon, Chang-Il Kim, In-Gab Hwang, "Angle-Resolved XPS Investigation of the Fluorine-related Passivation Layer on Etched Al(Cu 1%) Surface After SF6 Treatment", J. Korean Phys. Soc., Vol. 34, No. 92, pp.S305-S309 (Jun. 1999)
[7]K.-H. Baek, S. J. Yun, J.-M. Park, Y.-S. Yoon, K.-S. Nam, K.-H. Kwon, and C.-I. Kim" The role of sulfur during Mo etching using SF6 and Cl2 gaschemistries", Journal of Materials Science Letters, Vol. 17, Issues pp.1483-1486 (Nov. 1998)
[6]Kwang-Ho Kwon, Chang-Il Kim, Sun Jin Yun, and Guen-Young Yeom, "Etching properties of Pt thin films by inductively coupled plasma", J. Vac. Sci. Technol. A, 16(5), pp.2772-2776,(Sep/Oct 1998)
[5]Kyu-Ha Baek, Yong-Sun Yoon, Jong-Moon Park, Kwang-Ho Kwon, Chang-Il Kim, and Kee-Soo Nam, "A fluorine-related passivation layer on the etched Al-Cu (1%) alloy surfaces on silicon after SF6 plasma treatments", Materials Letters, Vol. 35, Issues.3-4, pp.183-187, (May. 1998)
[4]Kyu-Ha Baek, Chang-Il Kim, Kwang-Ho Kwon, Tae-Hyung Kim, Eui-Goo Chang, Sun Jin Yun, Young-Sun Yun, Sang-Gi Kim, and Kee-Soo Nam, "Passivation role of fluorine on the anticorrosion of AlCu films after plasma etching", J. Vac. Sci. Technol. A, 16(3), pp.1469-1472,(May/Jun 1998)
[3]Kwang-Ho Kwon, Sun Jin Yun, Chang-Il Kim, Jong-Moon Park, Kyu-Ha Baek, Yong Sun Yun, Sang-Gi Kim, and Kee-Soo Nam, "The Effects of Fluorine Passivation Using SF6 Plasma on the Corrosion of Al(Cu 1%) at Grain Boundaries", J. Electrochem. Soc., Vol.145, No.3, pp.1044-1048 (Mar. 1998)
[2]Il-Sup Jin, Hyung-Ho Park, Kwang-Ho Kwon, and Chang-Il Kim, "Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases", Microelectronics Engineering, Vol.33, Issues.1-4, pp.223-229 (Jan. 1997)
[1]Kwang-Ho Kwon, Hyung-Ho Park, Kyung-Soo Kim, Chang-Il Kim, and Young-Kwon Sung, "Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma", Jpn. J. Appl. Phys., Vol. 35, Part 1, No. 3, pp.1611-1616 (Mar. 1996)