Honor and Awards

• Chenming Hu Award (胡正明半導體創新獎), Pan Wen Yuan Foundation (潘文淵文教基金會), 2025
• 指導學生羅肇豐獲「2025 SSDM Young Research Award」, 2025
• 指導學生羅肇豐獲「聯電劉炯朗博士生獎學金」、「教育部博士獎學金」, 2025
• 指導學生張以太獲「教育部博士獎學金」, 2025
• 指導學生張福生獲「教育部博士獎學金」, 2025
• 指導學生鄭哲奇獲「國科會博士獎學金」, 2025
• 指導學生劉呈宏獲「台積電博士獎學金」、「國科會博士獎學金」, 2025
• Outstanding Research Award (112年度國科會傑出研究獎), National Science and Technology Council (國家科學籍技術委員會), 2024
• 指導學生向國瑜獲「2024 TSIA半導體獎:博士班研究生」, 2024
• 指導學生劉呈宏參加2023 International Electron Devices & Materials Symposium 2023 (IEDMS)論文競賽獲Best Oral Paper Award, 2023
• 指導學生李哲銓參加2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSI-TFT)論文競賽獲佳作海報論文獎, 2023
• 劉致為、李敏鴻、陳敏璋獲國科會2022年度未來科技獎, 2022
• 指導學生Asim Senapati參加International Electron Devices & Materials Symposium 2021 (IEDMS)論文競賽獲佳作海報論文獎, 2021
• 指導學生張鈞維參加International Electron Devices & Materials Symposium 2021 (IEDMS)論文競賽獲最佳海報論文獎, 2021
• 指導學生廖俊宇獲榮獲中技社110年度「中技社科技獎學金」研究奬學金, 2021
• 指導博後研究員陳冠廷獲「109年度博士後研究人員學術研究獎」, 2020
• 指導學生陳冠廷等人參加Symposium on Nano Device Technology (SNDT)論文競賽獲前瞻奈米元件技術與系統整合海報競賽優等獎, 2019
• IEEE senior member, 2019
• 指導學生陳冠廷獲「107年度研發替代役績優役男獎」, 2018
• 指導學生陳品光獲「2016 TSIA半導體獎:博士班研究生」, 2016
• 指導學生陳冠廷獲中興大學工學院104學年度研究生論文競賽「特優獎」, 2015
• 指導學生高證穎參加18th Symposium on Nano Device Technology (SNDT)論文競賽獲奈米電子頭等獎, 2011
• 指導學生曾偉寧參加17th Symposium on Nano Device Technology (SNDT)論文競賽獲傑出學生論文優選獎, 2010
• 指導學生劉永宗參加15th Symposium on Nano Device Technology (SNDT)論文競賽獲功能性奈米材料技術學生論文優選獎, 2008
• 獲國立台灣師範大學100, 101, 103, 107, 109年度產學合作績優獎

Invited Talk

• Min-Hung Lee*, Zhao-Feng Luo, Chun-Yu Liao, Kuo-Yu Hsiang, Jia-Yang Lee, Fu-Shen Chang, Yii-Tay Chang, Cheng-Hong Liu, and Che-Chi Cheng, “High Dielectric Constant of HfO2 Technology for Memory Applications, ” The 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025), T-1-1-4, Hong Kong, Mar. 9-12, 2025.

• Min-Hung Lee*, Zhao-Feng Luo, Kuo-Yu Hsing, Fu-Shen Chang, Jia-Yang Lee, Yii-Tay Chang, and Cheng-Hong Liu, “High Capacitive Ratio of Memcapacitors with High Dielectric Constant and Applicable Remanant Polarization Toward Neuromorphic Computing, ” The IEEE International Nanoelectronics Conference in 2025 (IEEE INEC 2025), New Taipei City, Taiwan, Jan. 3-6, 2025.

•  Min-Hung Lee*, Zhao-Feng Luo, Kuo-Yu Hsing, Fu-Shen Chang, Jia-Yang Lee, Yii-Tay Chang, and Cheng-Hong Liu, “Gate Stack Engineering of Ferroelectric HfZrO2 from Multi-Level Non-Volatile Memory (NVM) to Analog-based Synapse, ” International Conference on Solid State Devices and Materials (SSDM), pp. 41-42, Himeji, Japan, Sep. 1-4, 2024.

•  M. H. Lee*, “3D Anti-ferroelectric Hf-oxide Tunneling Junction Toward High-Density Stacking, ” International Electron Devices and Materials Symposium (IEDMS), National Sun Yat-sen University, Kaohsiung City, Taiwan, Oct. 19-20, 2023.

• Min-Hung Lee*, “Ferroelectric Engineering of FeFET Toward Multi-Level Coding for High-Density Nonvolatile Memory” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), p. 248, Hsinchu, Taiwan, Apr. 17-20, 2023.

• M. H. Lee*, C.-Y. Liao, K.-Y. Hsiang, S.-T. Fan, and C. W. Liu, “Polycrystalline Ferroelectric HfZrO2-based Negative Capacitance FETs with Polarization Phases and Domains, ” Materials Research Society (MRS) Spring Meeting & Exhibit, FL09, Apr. 17-23, 2021. (virtual)

• M. H. Lee*, “Ferroelectric HfZrO2 FETs for Emerging Technologies, ” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Aug. 10-13, 2020.

• Min-Hung Lee*, “Prospect of Ultra-Thin Ferroelectric HfZrO2 for Low-Power Applications, ” China Semiconductor Technology International Conference (CSTIC) 2020, Shanghai, China, June 30-July 1, 2020 (online).

• M. H. Lee*, K.-T. Chen, C.-Y. Liao, G.-Y. Siang, H.-Y. Chen, C. Lo, C.-Y. Chueh, T.-J. Tseng, Y.-J. Yang, Y.-Y. Lin, C. Chang, S. T. Chang, and K.-S. Li, “Ferroelectric HfZrO2 FETs for Steep Switch Onset, ” 2019 Insulating Films on Semiconductors (INFOS 2019), 2-2, Cambridge University, Cambridge, UK, Jun. 30-Jul. 3, 2019.

• M. H. Lee*, K.-T. Chen, C.-Y. Liao, G.-Y. Siang, H.-Y. Chen, C. Lo, C.-Y. Chueh, Y-J. Tseng, Y.-J. Yang, Y.-Y. Lin, C. Chang, S. T. Chang, M.-H. Liao, K.-S. Li and C. W. Liu, “Prospect of Ferroelectric HfZrO2 Devices for Low-Power Applications, ” Symposium on Nano Device Technology (SNDT), S1-1, Hsinchu Taiwan, 2019.

• M. H. Lee*, C.-Y. Liao, G.-Y. Siang, C. Lo, H.-Y. Chen, S.-Y. Chen, Y.-J. Tseng, K.-T. Chen, S. T. Chang, and K.-S. Li, “Ultra-Thin Ferroelectric HfZrO2 by Atomic-Layer Deposition (ALD) for Steep Slope Transistors Application, ” 31nd International Microprocesses and Nanotechnology Conference (MNC), 16A-8-1, Sapporo, Japan, Nov. 11-13, 2018.

• M. H. Lee*, Y.-C. Chou, S.-S. Gu, C.-Y. Liao, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, P.-G. Chen, C.-Y. Kuo, C.-H. Tang, H.-H. Chen, K.-T. Chen, S. T. Chang, M.-H. Liao, and K.-S. Li, “Characteristics of Ultra-Thin Ferroelectric HfZrOx on Negative-Capacitance FETs for Steep Subthreshold Swing, ” 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY - (IWDTF 2017), S7-1, Todaiji Temple Cultural Center, Nara, Japan, Nov. 20-22, 2017.

•  M. H. Lee*, R.-C. Hong, S.-S. Gu, Y.-C. Chou, C.-Y. Liao, Z.-Y. Wang, S.-Y. Chen, P.-G. Chen, C.-Y. Kuo, C.-H. Tang, H.-H. Chen, K.-T. Chen, S. T. Chang, M.-H. Liao, and K.-S. Li, “Characteristics of Ferroelectric Hf-based Oxide and Diversity Applications, ” International Symposium on Memory Devices for Abundant Data Computing (MD 2017), Hong Kong, Sep. 22-24, 2017.

• M. H. Lee*, P.-G. Chen, S.-T. Fan, C.-Y. Kuo, H.-H. Chen, S.-S. Gu, Y.-C. Chou, C.-H. Tang, R.-C. Hong, Z.-Y. Wang, M.-H. Liao, K.-S. Li, M.-C. Chen, and C. W. Liu, “Negative Capacitance FETs with Steep Switching by Ferroelectric Hf-based Oxide, ”  International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), T3-1, Hsinchu, Taiwan, Apr. 24-27, 2017.

• M. H. Lee*, P.-G. Chen, S.-T. Fan, J.-Y. Kuo, C.-H. Tang, H.-H. Chen, and C. W. Liu, “Ferroelectricity in Hf-based Oxide: Negative Capacitance FETs for Steep Subthreshold Swing, ” Materials Research Society (MRS) Spring Meeting & Exhibit, ED7.4.04, Phoenix, Arizona, Apr. 17-21, 2017. 

• M. H. Lee*, P.-G. Chen, C. Liu, K.-T. Chen, Y.-T. Wei, J.-C. Lin, S.-N. Liu, H.-H. Chen, C.-H. Tang, W.-H. Tu, K.-S. Li, M.-C. Chen, M.-H. Liao, C.-H. Cheng, S. T. Chang, and C. W. Liu, “Steep Subthreshold Swing with Negative Capacitance Effect using Ferroelectric Gate Stack, ” International Electron Devices and Materials Symposium (IEDMS), D3-I, Taipei, Taiwan, Nov. 24-25, 2016.

• M. H. Lee*, P.-G. Chen, C. Liu, K.-T. Chen, M.-J. Xie, S.-N. Liu, H.-H. Chen, C.-H. Tang, J.-W. Lee, W.-H. Tu, K.-S. Li, M.-C. Chen, M.-H. Liao, C.-Y. Chang, C.-H. Cheng, S. T. Chang, and C. W. Liu, “Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free, ” International Conference on Solid State Devices and Materials (SSDM), pp. 15-16, Tsukuba, Japan, Sep. 26-29, 2016.

• M. H. Lee*, J.-C. Lin, Y.-T. Wei, C.-Y. Kao, C.-W. Chen, W.-H. Tu, and M. Tang, “Steep Subthreshold Slope FETs, ” Symposium on Nano Device Technology (SNDT), S3-3, p. 14, Hsinchu Taiwan, 2014. 

• M. H. Lee*, S. T. Chang, M. Tang, K.-Y. Ho, J.-J. Huang, and G.-R. Hu, “The Trap States Formation of Amorphous Si TFT with Mechanical Bending for Flexible Electronics,” 2008 International Electron Devices and Materials Symposia, Taichung, Taiwan, Nov. 28-29, 2008.

• P. S. Chen, M. H. Lee, S. W. Lee, C. W. Liu, and M.-J. Tsai*, “Strained CMOS technology with Ge,” 207th Meeting of Electrochemical Society, Quebec City, Canada, May. 15-20, 2005

• M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y.-C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu*, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, “The Noise Characteristics in Strained-Si MOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.

Professional Activities

• VLSI-TSA, TPC, 2026

• IEEE EDTM, TPC, 2026

• IEDMS, Track Chair, 2025

• VLSI-TSA, TPC, 2025

• IEDMS, TPC & session chair, 2015-2024

• IEEE SISC committee, 2020-2022

• IWDTF TPC & session chair, 2017, 2014

• SNDT, TPC, 2014

• PVSEC, TPC, 2013

• OPTIC, TPC & session chair, 2012

• IEEE INEC, TPC, 2011

• Guest Editor, [Coatings] Special Issue "Semiconductor Thin Films: Fabrication, Characterization and Applications" https://www.mdpi.com/journal/coatings/special_issues/semiconductor_film

• 國科會 微電子學門 複審委員/審議委員

• Reviewer

- Review Proposal(s) for Singapore's Science & Engineering Research Council (SERC) 2019 AME(Advanced Manufacturing and Engineering) IRG(Individual Research Grants) & YIRG(Young Individual Research Grants)

- Review Proposal for Austrian Science Fund (FWF)

- Journal: ACS Applied Materials & Interfaces; IEEE Electronic Device Letters; IEEE Transactions on Electron Devices; IEEE Transactions on Nanotechnology; IEEE Transactions on Semiconductor Manufacturing; IEEE Transactions on Device and Materials Reliability; IEEE Journal of Display Technology; 2D Materials; Scientific Reports; Journal of Applied Physics; Springer Optical and Quantum Electronics; Springer Applied Physics A; Elsevier Journal of Alloys and Compounds; Elsevier Journal of Physics and Chemistry of Solids; Elsevier Organic Electronics; Elsevier Thin Solid Films; Elsevier Current Applied Physics; Elsevier Physica E; Elsevier Solid State Electronics; Elsevier Microelectronics Journal; Elsevier Microelectronics Reliability; Elsevier Microelectronic Engineering; Elsevier Vacuum; Elsevier International Journal of Heat and Mass Transfer; ECS Journal of Solid State Science and Technology; Japanese Journal of Applied Physics (JJAP); Journal of Nanoscience and Nanotechnology (JNN); International Journal of Nanotechnology; Journal of the Korean Physical Society (JKPS); Far East Journal of Electronics and Communications; …